KR960030228A - Step-up circuit including logic element - Google Patents

Step-up circuit including logic element Download PDF

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Publication number
KR960030228A
KR960030228A KR1019950000633A KR19950000633A KR960030228A KR 960030228 A KR960030228 A KR 960030228A KR 1019950000633 A KR1019950000633 A KR 1019950000633A KR 19950000633 A KR19950000633 A KR 19950000633A KR 960030228 A KR960030228 A KR 960030228A
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South Korea
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inverting
mos transistor
decoding means
circuit including
level shifter
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KR1019950000633A
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KR0167233B1 (en
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문태훈
강종민
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문정환
Lg 반도체주식회사
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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/14Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/30Power supply circuits

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Logic Circuits (AREA)
  • Read Only Memory (AREA)

Abstract

본 발명은 논리소자를 포함한 승압회로에 관한 것으로서, 이는 신호의 디코딩 자체를 논리곱 반전소자 또는 논리합 반전소자를 거치지 않고 직접 레벨 쉬프터부에서 처리하여 회로의 간소화 및 속도의 향상을 제공하도록 한 것이다.The present invention relates to a booster circuit including a logic element, which processes the decoding of the signal itself in a level shifter directly without passing through a logical-inverting device or a logic-sum inverting device, thereby providing a simplification and speed improvement of the circuit.

이와같은 본 발명의 논리소자를 포함한 승압회로는 적어도 둘 이상의 입력 비트수 디코딩하여 출력하는 디코딩수단과; 상기 입력 비트수를 반전하여 출력하는 반전수단과; 상기 디코딩수단 및 반전수단에서 얻어진 전압 레벨을 따라 스위칭하여 전원단자의 전압을 승압하여 워드라인으로 제공하는 레벨 쉬프터수단으로 이루어짐으로서 달성된다.Such a boosting circuit including a logic device of the present invention includes decoding means for decoding and outputting at least two or more input bits; Inverting means for inverting and outputting the number of input bits; It is achieved by the level shifter means for switching along the voltage level obtained by the decoding means and the inverting means to boost the voltage of the power supply terminal and provide it to the word line.

Description

논리소자를 포함한 승압회로Step-up circuit including logic element

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명 논리소자를 포함한 승압회로도로서, (가)는 논리곱 반전소자를 포함한 레벨 쉬프터 회로도이고, (나)는 논리합 반전소자를 포함한 레벨 쉬프터 회로도이며, (다)는 논리곱소자를 포함한 레벨 쉬프터 회로도이고, (라)는 논리합소자를 포함한 레벨 쉬프터 회로도이다.2 is a step-up circuit diagram including a logic element of the present invention, (a) is a level shifter circuit diagram including an AND logic inverting element, (B) is a level shifter circuit diagram including an OR sum inversion element, and (C) is a logic multiplication element A level shifter circuit diagram is included, and (d) is a level shifter circuit diagram including a logic sum element.

Claims (15)

적어도 둘 이상의 입력 비트수 디코딩하여 출력하는 디코딩수단과: 상기 서로 다른 입력 비트수를 반전하여 출력하는 반전수단과: 상기 디코딩수단 및 반전수단에서 얻어진 전압레벨에 따라 전원단자의 전압을 승압하여 워드라인으로 제공하는 레벨 쉬프트수단과;를 구비하여 된 논리소자를 포함한 승압회로.Decoding means for decoding and outputting at least two input bit numbers; and inverting means for inverting and outputting the different number of input bits; and boosting a voltage of a power supply terminal according to a voltage level obtained by the decoding means and the inversion means. And a level shifting means provided in the step-up circuit. 제1항에 있어서, 디코딩수단은 게이트가 상기 서로 다른 입력단자에 접속되어 그 입력 신호의 레벨에 따라 워드라인으로 공급되는 레벨 쉬프터수단의 출력전압을 제어하는 직렬 접속된 엔-모스 트랜지스터(NM1~NM3)로 구성함을 특징으로 한 논리소자를 포함한 승압회로.The N-MOS transistor of claim 1, wherein the decoding means has a gate connected to the different input terminals and controls the output voltage of the level shifter means supplied to the word line according to the level of the input signal. Step-up circuit including a logic element characterized in that consisting of NM3). 제1항 또는 제2항에 있어서, 디코딩수단은 논리곱 반전소자인 것을 특징으로 한 논리소자를 포함한 승압회로.3. The booster circuit according to claim 1 or 2, wherein the decoding means is an AND-inverting element. 제1항 또는 제2항에 있어서, 디코딩수단은 논리합 반전소자인 것을 특징으로 한 논리소자를 포함한 승압회로.3. The booster circuit according to claim 1 or 2, wherein the decoding means is a logic sum inverting element. 제1항 또는 제2항에 있어서, 디코딩수단은 논리곱소자인 것을 특징으로 한 논리소자를 포함한 승압회로.The booster circuit according to claim 1 or 2, wherein the decoding means is a logical multiplication device. 제1항 또는 제2항에 있어서, 디코딩수단은 논리합소자인 것을 특징으로 한 논리소자를 포함한 승압회로.3. The booster circuit according to claim 1 or 2, wherein the decoding means is a logic sum element. 제3항에 있어서, 디코딩수단이 논리곱 반전소자인 경우 레벨 쉬프터수단은 상기 디코딩수단의 엔-모스트랜지스터(NM1)의 드레인에 게이트가 접속되어 스위칭 되는 피-모스 트랜지스터(PM2)와; 상기 피-모스 트랜지스터(PM2)와 병렬 접속되고 상기 엔-모스 트랜지스터(PM1)와 직렬 접속되어 전원단자의 전압을 출력단자로 제공하는 피-모스 트랜지스터(PM1)와; 상기 피-모스 트랜지스터(PM2)와 직렬 접속되어 상기 반전 수단에서 얻어진 서로 다른 전압의 레벨에 따라 스위칭되어 피-모스 트랜지스터(PM1)의 게이트를 제어하는 엔-모스 트랜지스터(NM4~NM6)로 구성함을 특징으로 한 논리소자를 포함한 승압회로.4. The PMOS transistor of claim 3, wherein the level shifter means comprises: a P-MOS transistor (PM2) whose gate is connected to a drain of an N-most transistor (NM1) of the decoding means and switched; A P-MOS transistor (PM1) connected in parallel with the P-MOS transistor (PM2) and connected in series with the N-MOS transistor (PM1) to provide a voltage of a power supply terminal to an output terminal; N-MOS transistors NM4 to NM6 connected in series with the P-MOS transistor PM2 and switched according to different voltage levels obtained by the inversion means to control the gate of the P-MOS transistor PM1. Step-up circuit including a logic element characterized in that. 제4항에 있어서, 디코딩수단이 논리합 반전소자인 경우의 레벨 쉬프터수단은 상기 엔-모스 트랜지스터(NM4~NM6)를 출력단자에 병렬 접속하고 피-모스 트랜지스터와 직렬 접속하여 구성함을 특징으로 한 논리 소자를 포함한 승압회로.The level shifter means when the decoding means is a logic sum inverting element. The level shifter means is configured by connecting the N-MOS transistors NM4 to NM6 in parallel with an output terminal and in series with a P-MOS transistor. Step-up circuit including a logic element. 제4항에 있어서, 디코딩수단이 논리합 반전소자일 경우 직렬 접속된 엔-모스 트랜지흐터(NM4~NM6)의 게이트에 서로 다른 입력단자를 접속하고 반전수단에서 반전된 서로 다른 전압은 엔-모스 트랜지스터(NM1~NM3)에 인가되도록 구성함을 특징으로 한 논리소자를 포함한 승압회로.5. The method of claim 4, wherein when the decoding means is a logical sum inversion element, different input terminals are connected to the gates of the N-MOS transistors NM4 to NM6 connected in series, and different voltages inverted by the inversion means are N-MOS. A boosting circuit including a logic element, characterized in that configured to be applied to transistors NM1 to NM3. 제5항에 있어서, 디코딩수단이 논리곱소자인 경우 직렬 접속된 엔-모스 트랜지스터(NM1~NM3)의 게이트에 서로 다른 입력단자를 접속하고 반전수단에 반전된 서로 다른 전압은 엔-모스 트랜지스터(NM4~NM6)의 게이트에 접속하여 구성함을 특징으로 한 논리소자를 포함한 승압회로.6. The method of claim 5, wherein when the decoding means is a logical multiplication device, different input terminals are connected to the gates of the N-MOS transistors NM1 to NM3 connected in series, and different voltages inverted to the inverting means are N-MOS transistors. A booster circuit including a logic element characterized in that it is connected to the gates of NM4 to NM6. 제5항에 있어서, 디코딩수단이 논리곱소자인 경우의 레벨 쉬프터 수단은 상기 엔-모스 트랜지스터(NM4~NM6)를 출력단자에 병렬 접속하고 피-모스 트랜지스터와 직결 접속하여 구성함을 특징으로 한 논리 소자를 포함한 승압회로.6. The level shifter means according to claim 5, wherein the level shifter means when the decoding means is a logical multiplication device is configured by connecting the N-MOS transistors NM4 to NM6 in parallel with an output terminal and directly connecting the P-MOS transistor. Step-up circuit including a logic element. 제6항에 있어서, 디코딩수단이 논리합소자인 경우 직렬 접속된 엔-모스 트랜지스터(NM4~NM6)의 게이트에 서로 다른 입력단자를 접속하고 반전수단에서 반전된 서로 다른 전압은 엔-모스 트랜지스터(NM1~NM3)의 게이트에 접속하여 구성함을 특징으로 한 논리소자를 포함한 승압회로.7. The method of claim 6, wherein when the decoding means is a logic element, different input terminals are connected to gates of the N-MOS transistors NM4 to NM6 connected in series, and different voltages inverted by the inverting means are N-MOS transistors NM1. A boosting circuit including a logic element characterized in that it is connected to the gate of ~ NM3). 제6항에 있어서, 디코딩수단이 논리합소자인 경우의 레벨 쉬프터 상기 엔-모스 트랜지스터(NM4~NM6)의 출력단자에 병렬 접속하고 피-모스 트랜지스터(PM2)와 직렬 접속하여 구성함을 특징으로 한 논리소자를 포함한 승압회로.7. The level shifter in the case where the decoding means is a logic element, and is connected in parallel with the output terminals of the N-MOS transistors NM4 to NM6 and connected in series with the P-MOS transistor PM2. Step-up circuit including a logic element. 적어도 세개 이상의 비트수중에서 두 신호비트를 논리곱 반전하여 출력하는 논리곱 반전소자와; 상기 논리곱 반전소자의 출력신호를 반전하는 제1반전소자와; 상기 나머지 하나의 비트를 반전하는 제2반전소자와; 상기 논리곱 반전소자 및 제2반전소자의 출력신호에 따라 엔-모스 트랜지스터(NM27)(NM28) 및 피-모스 트랜지스터(PM9)가 스위칭되어 워드라인으로 전원을 공급하고 상기 제1반전소자 및 나머지 하나의 비트신호에 의해 엔-모스 트랜지스터(NM25)(NM26) 및 피-모스 트랜지스터(PM10)가 스위칭되어 워드라인으로 공급되는 전압을 워드라인을 제어하는 레벨 쉬프터수단으로 구성함을 특징으로 한 논리소자를 포함한 승압회로.A logical AND inversion element for logically inverting and outputting two signal bits among at least three or more bits; A first inverting element for inverting an output signal of the AND product; A second inversion device for inverting the other bit; The N-MOS transistors NM27 (NM28) and the P-MOS transistor PM9 are switched to supply power to a word line according to the output signals of the AND-inverting device and the second inverting device, and the first inverting device and the other are inverted. The N-MOS transistor NM25, NM26 and P-MOS transistor PM10 are switched by one bit signal, and the voltage supplied to the word line is configured as a level shifter means for controlling the word line. Booster circuit including element. 제14항에 있어서, 적어도 세개 이상의 비트수중에서 레벨 쉬프터수단으로 직접 입력되는 신호는 상기 두 비트신호 보다 느린 속도인 것을 특징으로 한 논리소자를 포함한 승압회로.15. The boost circuit according to claim 14, wherein a signal directly input to the level shifter means among at least three or more bits is at a slower speed than the two bit signals. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950000633A 1995-01-16 1995-01-16 Boost circuit including logic device KR0167233B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100685644B1 (en) * 2002-07-10 2007-02-22 주식회사 하이닉스반도체 Charge pump circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100685644B1 (en) * 2002-07-10 2007-02-22 주식회사 하이닉스반도체 Charge pump circuit

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