KR960026909A - Charge coupled device solid state imaging device and method of manufacturing same - Google Patents

Charge coupled device solid state imaging device and method of manufacturing same Download PDF

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Publication number
KR960026909A
KR960026909A KR1019940034248A KR19940034248A KR960026909A KR 960026909 A KR960026909 A KR 960026909A KR 1019940034248 A KR1019940034248 A KR 1019940034248A KR 19940034248 A KR19940034248 A KR 19940034248A KR 960026909 A KR960026909 A KR 960026909A
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South Korea
Prior art keywords
transfer unit
state imaging
imaging device
charge coupled
charges
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KR1019940034248A
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Korean (ko)
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KR0155783B1 (en
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이강복
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김광호
삼성전자 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H01L27/14843—Interline transfer

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

전위우물 속에 또 다른 전위우물을 가지는 전하결합소자형 고체촬상장치 및 그 제조방법에 대해 기재되어 있다. 이는 입력광에 따라 전하를 생성시키는 광 다이오드와 상기 광 다이오드에 존재하는 전하를 읽어내고 전달하는 수직 전송부와 상기 수직 전송부로부터 전송된 전하를 출력단로 전송하는 수평 전송부와 상기 수평 전송부로부터 전송된 전하들을 감지하여 증폭하는 출력단으로 구성되는 고체촬상장치에 있어서, 상기 수평 전송부의 전송채널 내에, 출력단으로 전송되는 전하들의 이동방향과 평행하게 적어도 둘 이상의 서로 분리된 전위언덕이 형성되어 있는 것을 특징으로 한다. 따라서, 신호전하의 양이 작을 때의 전하결합소자의 전송효율을 향상시켰다.A charge coupled device type solid state imaging device having another potential well in a potential well and a manufacturing method thereof are described. It includes a photodiode that generates charges according to input light, a vertical transfer unit that reads and transfers charges present in the photodiode, and a horizontal transfer unit that transfers charges transferred from the vertical transfer unit to an output terminal and the horizontal transfer unit. A solid-state imaging device comprising an output stage for sensing and amplifying transferred charges, wherein at least two separate potential hills are formed in a transfer channel of the horizontal transfer unit in parallel with a moving direction of charges transferred to the output stage. It features. Therefore, the transfer efficiency of the charge coupled device when the amount of signal charge is small is improved.

Description

전하결합소자형 고체촬상소자장치 및 그 제조방법Charge-coupled device solid-state image pickup device and its manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제4도는 상기 제1도의 Ⅱ-Ⅱ´선을 잘라 본 발명의 방법에 의해 형성된 전하결합소자를 도시한 단면도이다.4 is a cross-sectional view showing a charge coupled device formed by the method of the present invention by cutting the line II-II 'of FIG.

Claims (5)

입력광에 따라 전하를 생성시키는 광 다이오드와 상기 광 다이오드에 존재하는 전하를 읽어내고 전달하는 수직 전송부와 상기 수직 전송부로부터 전송된 전하를 출력단으로 전송하는 수평 전송부와 상기 수평 전송부로 부터 전송된 전하들을 감지하여 증폭하는 출력단으로 구성되는 고체촬상장치에 있어서, 상기 수평 전송부의 전송채널 내에, 출력단으로 전송되는 전하들의 이동방향과 평행하게 적어도 둘 이상의 서로 분리된 전위언덕이 형성되어 있는 것을 특징으로 하는 전하결합소자형 고체촬상장치.A photodiode that generates charges according to input light, a vertical transfer unit that reads and transfers charges present in the photodiode, and a horizontal transfer unit that transfers charges transferred from the vertical transfer unit to an output terminal and transfers the horizontal transfer unit from the horizontal transfer unit A solid-state imaging device comprising an output stage for sensing and amplifying the charged charges, wherein at least two separate potential hills are formed in a transmission channel of the horizontal transfer unit in parallel with a moving direction of charges transferred to the output terminal. Charge coupled device type solid state imaging device. 수평전송부가 형성될 제1도전형의 반도체기판에 제1도전형의 불순물을 도우프하여 일방향으로 긴 막대모양의 전송채널을 형성하는 제1공정; 제2도전형의 불순물을 상기 전송채널에 부분적으로 도우프하여 상기 일방향으로 긴 막대모양의 불순물 확산영역을 형성하는 제2공정; 결과물 상에 절연막을 형성하는 제3공정; 및 상기 전송채널이 상의 절연막 상에 서로 분리된 다수의 전송전극들을 형성하는 제4공정을 포함하는 것을 특징으로 하는 전하결합소자형 고체촬상장치의 제조방법.A first step of forming a long rod-shaped transfer channel in one direction by doping the first conductive type impurity on the first conductive type semiconductor substrate on which the horizontal transfer part is to be formed; A second step of partially doping a second conductive type impurity into said transfer channel to form an elongated rod-shaped impurity diffusion region in said one direction; A third step of forming an insulating film on the resultant; And a fourth step of forming a plurality of transfer electrodes separated from each other on the insulating film on the transfer channel. 제2항에 있어서, 상기 제1공정 시 또는 그 후에, 제2도전형의 불순물울 적어도 상기 전송채널이 형성될 영역을 포함하는 영역에 주입함으로써 도핑우물을 형성하는 공정을 더 포함하는 것을 특징으로 하는 전하결합소자형 고체촬상장치의 제조방법.The method of claim 2, further comprising forming a doping well by injecting at least a second conductive type impurity into a region including a region where the transport channel is to be formed during or after the first process. A method of manufacturing a charge coupled device type solid state imaging device. 제3항에 있어서, 상기 제1공정 또는 제2공정 후에, 상기 전송채널의 가장자리를 따라 제2도전형의 불순물이온을 주입함으로써 소자분리영역을 형성하는 공정을 더 포함하는 것을 특징으로 하는 전하결합소자형 고체촬상장치의 제조방법.4. The charge coupling method of claim 3, further comprising forming a device isolation region by implanting a second conductive impurity ion along an edge of the transfer channel after the first or second process. Method of manufacturing a device-type solid state imaging device. 제4항에 있어서, 상기 불순물 확산영역은 보론 이온을 2E11 이온/㎠의 농도, 50keV의 에너지로 주입하여 형성되고, 상기 소자분리영역은 인 이온을 2E13 이온/㎠의 농도, 60keV의 에너지로 주입하여 형성되는 것을 특징으로 하는 전하결합소자형 고체촬상장치의 제조방법.The method of claim 4, wherein the impurity diffusion region is formed by implanting boron ions at a concentration of 2E11 ions / cm 2 and energy of 50 keV, and the device isolation region is implanted with phosphorus ions at a concentration of 2E13 ions / cm 2 and energy of 60 keV. Method of manufacturing a charge coupled device type solid-state imaging device, characterized in that formed by. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940034248A 1994-12-14 1994-12-14 Charge coupled device and the fabrication thereof KR0155783B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100595802B1 (en) * 1998-03-17 2006-07-03 소니 가부시끼 가이샤 Semiconductor device having a light-receiving element, optical pickup device and method of manufacturing a semiconductor device having a light-receiving element

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001156284A (en) * 1999-11-25 2001-06-08 Sanyo Electric Co Ltd Solid-state image pickup device and its manufacturing device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100595802B1 (en) * 1998-03-17 2006-07-03 소니 가부시끼 가이샤 Semiconductor device having a light-receiving element, optical pickup device and method of manufacturing a semiconductor device having a light-receiving element

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