KR960026366A - - Google Patents
Info
- Publication number
- KR960026366A KR960026366A KR19950048195A KR19950048195A KR960026366A KR 960026366 A KR960026366 A KR 960026366A KR 19950048195 A KR19950048195 A KR 19950048195A KR 19950048195 A KR19950048195 A KR 19950048195A KR 960026366 A KR960026366 A KR 960026366A
- Authority
- KR
- South Korea
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5826—Treatment with charged particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- H10P14/6924—
-
- H10W20/098—
-
- H10P14/6336—
-
- H10P14/6682—
-
- H10P14/6686—
-
- H10P14/6922—
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6332603A JPH08167601A (ja) | 1994-12-13 | 1994-12-13 | 半導体装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR960026366A true KR960026366A (cg-RX-API-DMAC10.html) | 1996-07-22 |
Family
ID=18256802
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR19950048195A Ceased KR960026366A (cg-RX-API-DMAC10.html) | 1994-12-13 | 1995-12-11 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US5700736A (cg-RX-API-DMAC10.html) |
| JP (1) | JPH08167601A (cg-RX-API-DMAC10.html) |
| KR (1) | KR960026366A (cg-RX-API-DMAC10.html) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08167601A (ja) | 1994-12-13 | 1996-06-25 | Sony Corp | 半導体装置の製造方法 |
| JP3641869B2 (ja) * | 1996-03-19 | 2005-04-27 | ソニー株式会社 | 半導体装置の製造方法 |
| US6284677B1 (en) * | 1997-04-18 | 2001-09-04 | United Semiconductor Corp. | Method of forming fluorosilicate glass (FSG) layers with moisture-resistant capability |
| US6008540A (en) * | 1997-05-28 | 1999-12-28 | Texas Instruments Incorporated | Integrated circuit dielectric and method |
| JP2000003909A (ja) * | 1998-06-15 | 2000-01-07 | Kishimoto Sangyo Co Ltd | 半導体デバイス用絶縁膜および半導体デバイス |
| US6403464B1 (en) | 1999-11-03 | 2002-06-11 | Taiwan Semiconductor Manufacturing Company | Method to reduce the moisture content in an organic low dielectric constant material |
| US6716770B2 (en) | 2001-05-23 | 2004-04-06 | Air Products And Chemicals, Inc. | Low dielectric constant material and method of processing by CVD |
| US7074489B2 (en) * | 2001-05-23 | 2006-07-11 | Air Products And Chemicals, Inc. | Low dielectric constant material and method of processing by CVD |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2697315B2 (ja) * | 1991-01-23 | 1998-01-14 | 日本電気株式会社 | フッ素含有シリコン酸化膜の形成方法 |
| JP2699695B2 (ja) | 1991-06-07 | 1998-01-19 | 日本電気株式会社 | 化学気相成長法 |
| JPH05226480A (ja) * | 1991-12-04 | 1993-09-03 | Nec Corp | 半導体装置の製造方法 |
| JP2773530B2 (ja) * | 1992-04-15 | 1998-07-09 | 日本電気株式会社 | 半導体装置の製造方法 |
| US5492736A (en) * | 1994-11-28 | 1996-02-20 | Air Products And Chemicals, Inc. | Fluorine doped silicon oxide process |
| JPH08167601A (ja) | 1994-12-13 | 1996-06-25 | Sony Corp | 半導体装置の製造方法 |
| US5807785A (en) * | 1996-08-02 | 1998-09-15 | Applied Materials, Inc. | Low dielectric constant silicon dioxide sandwich layer |
| US5827785A (en) * | 1996-10-24 | 1998-10-27 | Applied Materials, Inc. | Method for improving film stability of fluorosilicate glass films |
| US5908672A (en) * | 1997-10-15 | 1999-06-01 | Applied Materials, Inc. | Method and apparatus for depositing a planarized passivation layer |
| US5876798A (en) * | 1997-12-29 | 1999-03-02 | Chartered Semiconductor Manufacturing, Ltd. | Method of fluorinated silicon oxide film deposition |
-
1994
- 1994-12-13 JP JP6332603A patent/JPH08167601A/ja active Pending
-
1995
- 1995-12-11 US US08/570,653 patent/US5700736A/en not_active Expired - Fee Related
- 1995-12-11 KR KR19950048195A patent/KR960026366A/ko not_active Ceased
-
1997
- 1997-08-14 US US08/911,551 patent/US6169023B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH08167601A (ja) | 1996-06-25 |
| US5700736A (en) | 1997-12-23 |
| US6169023B1 (en) | 2001-01-02 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| A201 | Request for examination | ||
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
St.27 status event code: N-2-6-B10-B15-exm-PE0601 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |