KR960026258A - Multi-layer metal layer formation method using chemical vapor deposition - Google Patents

Multi-layer metal layer formation method using chemical vapor deposition Download PDF

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Publication number
KR960026258A
KR960026258A KR1019940033003A KR19940033003A KR960026258A KR 960026258 A KR960026258 A KR 960026258A KR 1019940033003 A KR1019940033003 A KR 1019940033003A KR 19940033003 A KR19940033003 A KR 19940033003A KR 960026258 A KR960026258 A KR 960026258A
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KR
South Korea
Prior art keywords
layer
titanium
vapor deposition
chemical vapor
compound containing
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KR1019940033003A
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Korean (ko)
Inventor
황성보
김춘환
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김주용
현대전자산업 주식회사
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Priority to KR1019940033003A priority Critical patent/KR960026258A/en
Publication of KR960026258A publication Critical patent/KR960026258A/en

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Abstract

본 발명은 반도체 소자 제조공정 중 화학기상 증착법을 이용한 다층의 금속층 형성방법에 관한 것으로, 예정된금속층 형성부위에 티타늄(Ti)을 함유하고 있는 유기금속 화합물을 소정의 플라즈마로써 분해하여 티타늄 층을 증착하는 단계; 상기 티타늄층 위에 티타늄을 함유하고 있는 유기 금속화합물을 분해하여 티타늄나이트라이드층을 증착하는 단계를 포함하여 이루어지는 것을 특징으로 한다.The present invention relates to a method for forming a multilayer metal layer using chemical vapor deposition in a semiconductor device manufacturing process. The method comprises depositing a titanium layer by decomposing an organometallic compound containing titanium (Ti) in a predetermined metal layer to a predetermined plasma. step; And decomposing an organometallic compound containing titanium on the titanium layer to deposit a titanium nitride layer.

Description

화학기상 증착법을 이용한 다층의 금속층 형성방법.A method of forming a multilayer metal layer using chemical vapor deposition.

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1A도는 내지 제1D도는 본 발명의 일실시예에 따른 확산방지층 형성 과정을 나타내는 공정 단면도.1A through 1D are cross-sectional views illustrating a process of forming a diffusion barrier layer according to an embodiment of the present invention.

Claims (7)

반도체 소자 제조공정 중 화학기상 증착법을 이용한 다층의 금속층 형성방법에 있어서, 예정된 금속층 형성부위에 티타늄(Ti)을 함유하고 있는 유기금속 화합물을 소정의 플라즈마로써 분해하여 티타늄층을 증착하는 단계: 상기 티타늄층 위에 티타늄을 함유하고 있는 유기 금속화합물을 분해하여 티타늄나이트라이트층을 증착하는 단계를 포함하여 이루어지는 것을 특징으로 하는 화학기상 증착법을 이용한 다층의 금속층 형성방법.In the method of forming a multi-layer metal layer using a chemical vapor deposition method in the semiconductor device manufacturing process, the step of depositing a titanium layer by decomposing an organometallic compound containing titanium (Ti) in a predetermined metal layer forming a predetermined plasma: the titanium layer A method of forming a multilayer metal layer using a chemical vapor deposition method comprising the step of decomposing an organometallic compound containing titanium on a layer to deposit a titanium nitrite layer. 제1항에 있어서, 상기 소정의 플라즈마는 수소기 또는 아르곤 플라즈마 중 어느 하나인 것을 특징으로 하는 화학기상 증착법을 이용한 다층의 금속층 형성방법.The method of claim 1, wherein the predetermined plasma is one of a hydrogen group and an argon plasma. 제1항 또는 제2항에 있어서, 상기 티타늄나이트라이드층을 증착하는 단계는 티타늄을 함유하고 있는 유기 금속화합물을 열분해함으로써 이루어지는 것을 특징으로 하는 화학기상 증착법을 이용한 다층의 금속층 형성방법.The method of claim 1 or 2, wherein the depositing of the titanium nitride layer is performed by thermal decomposition of an organometallic compound containing titanium. 제1항 또는 제2항에 있어서, 상기 티타늄나이트라이드층을 증착하는 단계는 티타늄을 함유하고 있는 유기 금속화합물과 질소 또는 암모니아와 반응으로 이루어 지는 것을 특징으로 하는 화학기상 증착법을 이용한 다층의 금속층 형성방법.The method of claim 1, wherein the depositing of the titanium nitride layer is performed by reacting an organometallic compound containing titanium with nitrogen or ammonia. Way. 제1항 또는 제2항에 있어서, 상기 티타늄나이트라이드층을 증착하는 단계는 티타늄을 함유하고 있는 유기 금속화합물을 질소 또는 암모니아 플라즈마로 분해함으로써 이루어지는 것을 특징으로 하는 화학기상 증착법을 이용한 다층의 금속층 형성방법.The method of claim 1, wherein the depositing the titanium nitride layer is performed by decomposing an organometallic compound containing titanium into nitrogen or ammonia plasma to form a multilayer metal layer using a chemical vapor deposition method. Way. 제1항 내지 제5항 중 어느 한 항에 있어서, 상기 티타늄나이트라이드층 증착 후 알루미늄층을 형성하는 단계를 더 포함하여 이루어지는 것을 특징으로 하는 화학기상 증착법을 이용한 다층의 금속층 형성방법.6. The method of claim 1, further comprising forming an aluminum layer after the titanium nitride layer is deposited. 7. 제1항 내지 제5항 중 어느 한 항에 있어서, 상기 티타늄나이트라이드층 증착 후 텅스텐층을 증착하는 단계를 더 포함하여 이루어지는 것을 특징으로 하는 화학기상 증착법을 이용한 다층의 금속층 형성방법.6. The method of claim 1, further comprising depositing a tungsten layer after the titanium nitride layer is deposited. 7. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940033003A 1994-12-06 1994-12-06 Multi-layer metal layer formation method using chemical vapor deposition KR960026258A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100336296B1 (en) * 1999-07-30 2002-05-13 장세열 Electric-Acoustic Transducer Having Dual Voice Coil Drivers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100336296B1 (en) * 1999-07-30 2002-05-13 장세열 Electric-Acoustic Transducer Having Dual Voice Coil Drivers

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