KR960015542B1 - Laser ablation apparatus - Google Patents

Laser ablation apparatus Download PDF

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KR960015542B1
KR960015542B1 KR1019940003176A KR19940003176A KR960015542B1 KR 960015542 B1 KR960015542 B1 KR 960015542B1 KR 1019940003176 A KR1019940003176 A KR 1019940003176A KR 19940003176 A KR19940003176 A KR 19940003176A KR 960015542 B1 KR960015542 B1 KR 960015542B1
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South Korea
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laser
substrate
target
ablation apparatus
laser ablation
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KR1019940003176A
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Korean (ko)
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KR940019882A (en
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요시카즈 요시다
신이치 미즈구치
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마쯔시다덴기산교 가부시기가이샤
모리시타 요이찌
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Publication of KR940019882A publication Critical patent/KR940019882A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates

Abstract

내용없음No content

Description

레이저애블레이션장치Laser Ablation Device

제1도는 실시예에 있어서의 레이저애블레이션장치의 조감도.1 is a bird's eye view of a laser ablation apparatus in an embodiment.

제2도는 실시예에 있어서의 레이저애블레이션장치의 단면도.2 is a cross-sectional view of the laser ablation apparatus in the embodiment.

제3도는 종래예에 있어서의 레이저애블레이션장치의 단면도.3 is a cross-sectional view of the laser ablation apparatus according to the prior art.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 엑시이머레이저 2 : 레이저광1: excimer laser 2: laser light

3 : 렌즈 4 : 갈바노미러3: lens 4: galvano mirror

5 : 원통타깃 6 : 체인반송계5: cylindrical target 6: chain transfer system

7 : 기판 8 : 진공조7 substrate 8 vacuum chamber

9 : 진공펌프 10 : 레이저입사구9: vacuum pump 10: laser inlet

11,12 : 스토커 13 : 기판가열램프11,12: Stocker 13: substrate heating lamp

14 : 풀륨(plume)14: plume

본 발명은 박막디바이스에 이용되는 화합물의 막형성에 사용하는 레이저애블레이션에 관한 것이다.The present invention relates to laser ablation used for film formation of compounds used in thin film devices.

이하에, 종래에 레이저애블레이션장치(일본국, 오오미네메구미, 기계와 공구 1990년 7월 P.2)에 대해서 설명한다.In the following, a laser ablation apparatus (Japan, Ominemegumi, machines and tools July 1990 p. 2) will be described.

종래의 레이저애블레이션장치는 진공조내에 놓여진 회전원통타깃(21)에 임계치 이상의 에너지밀도의 레이저광(22)을 조사하면 물질(23)이 튀어나와 이 물질을 기판(24)에 부착시키는 것이었다. 레이저는 일반적으로 단파장의 펄스레이저광을 고에너지밀도로 집광해서 조사하고 있다. 이때, 레이저광은 진공밀봉된 창(25)으로부터 타깃(21)에 조사된다. 또, 기판은 진공조(26)내에 설치되어 있다.In the conventional laser ablation apparatus, when the rotary cylinder target 21 placed in the vacuum chamber is irradiated with laser light 22 having an energy density higher than or equal to a threshold value, the material 23 pops out and adheres the material to the substrate 24. In general, lasers collect and irradiate short-wavelength pulsed laser light with high energy density. At this time, the laser beam is irradiated to the target 21 from the vacuum-sealed window 25. In addition, the substrate is provided in the vacuum chamber 26.

그러나, 이와 같은 방식으로는 큰 면적의 기판에 막을 형성하는 경우, 증발 스포트가 작기 때문에 기판을 움직이게 할 필요가 있고, 기판의 4배 이상의 크기의 진공조가 필요하게 된다. 또 증발입자가 레이저입사창(25)에 부착하고, 타깃(21) 위에서의 레이저파워가 작아진다는 과제가 있었다.In this manner, however, when a film is formed on a large area substrate, the substrate is required to move because the evaporation spot is small, and a vacuum chamber of four times the size of the substrate is required. Moreover, there existed a subject that vaporized particle adheres to the laser incident window 25, and the laser power on the target 21 becomes small.

그래서 본 발명은, 상기 과제에 비추어, 연속적으로 흐르는 기판과 차동배기의 진공조에 의해서 둘러싸인 원통의 회전타깃 사이에 레이저광을 조사할 수 있는 레이저애블레이션장치의 제공을 목적으로 한다.Accordingly, an object of the present invention is to provide a laser ablation apparatus capable of irradiating a laser beam between a continuously flowing substrate and a rotating target of a cylinder surrounded by a vacuum chamber of a differential exhaust.

상기 과제를 해결하기 위하여, 본 발명은 레이저발진기와 레이저광을 집광하는 렌즈와, 레이저가 측면에 조사되는 회전원통타깃과, 원통타깃의 접선방향으로 움직이는 기판과, 기판위에 있고 원통타깃을 덮는 진공조와, 진공조에 뚫린 에이저입사구를 구비하고, 기판이 대기압인 곳에서 진공조내를 통과할때에 타깃의 증발물질이 부착하는 레이저애블레이션장치이다.In order to solve the above problems, the present invention provides a laser oscillator and a lens for condensing laser light, a rotating cylindrical target to which the laser is irradiated to the side, a substrate moving in the tangential direction of the cylindrical target, and a vacuum on the substrate and covering the cylindrical target. It is a laser ablation apparatus provided with a tank and the adjuvant entrance hole which perforated in a vacuum chamber, and the evaporation material of a target adheres when a board | substrate passes through a vacuum chamber at atmospheric pressure.

상기 구성에 의해, 대면적의 기판을 애블레이션영역으로 대기압으로부터 공급할 수 있고, 높은 스루풋의 성막장치를 제공할 수 있다.With the above configuration, a large-area substrate can be supplied to the ablation area from atmospheric pressure, and a high throughput film forming apparatus can be provided.

이하, 본 발명의 일실시예를 첨부도면에 의거해서 설명한다.EMBODIMENT OF THE INVENTION Hereinafter, one Embodiment of this invention is described based on an accompanying drawing.

제1도에 있어서, 예를들면 엑시이머레이저(1)로부터 발진된 애블레이션용 레이저광(2)는, 렌즈(3)으로 집광하여 갈바노미러(4)로 반사되어 원통타깃(5)의 측면에 조사된다. 원통타깃(5)는 X방향으로 회전하고 있다. 타깃의 아래에는, 체인반송계(6)의 위에 얹어진 기판(7)이 Y방향으로 움직이고 있다. 또,기판(7)의 위에는 예를들면 2mm의 간격을 띄우고, 진공조(8)이 원통타깃(5)를 덮고 있다. 진공조(8)에는, 진공배기용 폄프(9)가 부착되어 있으며, 레이저광(2)의 입사용 슬릿(10)이 뚫려 있다. 기판(7)은 스토커(11)로부터 체인반송계(6)에 실려져서, 원통타깃(5)의 아래를 통과하여, 성막된 후에 스토커(12)에 수납된다. 체인반송계(6)의 아래에는 기판가열램프(13)가 장착되어 있다.In FIG. 1, for example, the ablation laser light 2 oscillated from the excimer laser 1 is condensed by the lens 3, reflected by the galvano mirror 4, and the cylindrical target 5 Is investigated on the side. The cylindrical target 5 is rotating in the X direction. Under the target, the board | substrate 7 mounted on the chain transfer system 6 is moving to the Y direction. In addition, on the board | substrate 7, the space | interval of 2 mm, for example, is spaced apart, and the vacuum chamber 8 covers the cylindrical target 5. The vacuum exhaust pump 9 is attached to the vacuum chamber 8, and the slit 10 for incidence of the laser beam 2 is drilled. The substrate 7 is loaded from the stocker 11 into the chain transfer system 6, passes under the cylindrical target 5, and is stored in the stocker 12 after film formation. Below the chain transfer system 6, a substrate heating lamp 13 is mounted.

이와 같은 구조에 있어서, 예르들면, 파장 248nm 펄스폭 27nsec의 레이저광(2)는 렌즈(3)에 의해서 원통타깃(5)의 측면에는 예를들면 2mm×3mm의 스포트로 집광되고, 갈바노미러(4)에 의해서 기판(7)에 평행인 방향으로 예를들면 200mm스캔되도록 되어 있다. 원통타깃(5)의 측면에는 예를들면 인듐커퍼셀렌(InCuSe3)이 부착되어 있고, 제 2도에 표시한 바와 같이 원통타깃(5)의 물질은 레이저광(2)에 의해서 축출되어 ,기판(7)으로 날라가, 인듐과 커퍼세렌의 화합물 박막이 형성된다. 이때 예를들면 진공조(8)의 크기를 300mm×200mm×15mm이고, 슬릿(10)을 220mm×4mm로 하고, 유효배기속도 130리터/초의 오일확산펌프(9)에 의해서 배기하면 원통타깃(5)의 주위의도달진공도는 약 1Torr가 된다. 또 기판은 레이저광(2)의 입사방향 Z와는 반대의 방향 Y로부터 흘러오기 때문에 성막되기전에 진공조(8)내를 움직이고 있는 시간은 길어진다.In such a structure, for example, the laser light 2 having a wavelength of 248 nm and a pulse width of 27 nsec is collected by a lens 3 on the side of the cylindrical target 5 at a spot of, for example, 2 mm × 3 mm, and is a galvano mirror. (4) is, for example, 200 mm scan in the direction parallel to the substrate 7. For example, InCuSe 3 is attached to the side surface of the cylindrical target 5, and as shown in FIG. 2, the material of the cylindrical target 5 is expelled by the laser beam 2, and the substrate It flies to (7), and the compound thin film of indium and cupperene is formed. At this time, for example, the size of the vacuum chamber 8 is 300mm × 200mm × 15mm, the slit 10 is 220mm × 4mm, and the exhaust gas is discharged by the oil diffusion pump 9 having an effective exhaust speed of 130 liters / sec. The reaching vacuum around 5) becomes about 1 Torr. In addition, since the substrate flows from the direction Y opposite to the incidence direction Z of the laser beam 2, the time for moving the inside of the vacuum chamber 8 before film formation becomes longer.

예를들면, 원통타깃(5)와 기판(7)과의 간격을 1mm, 또 레이저광(2)의 조사위치와 기판(7)과의 간격을 5mm로 하면, 기판(7)은 원통타깃(5)의 아래를 통과후 즉시 성막되므로 막속으로의 산소의 도입량도 적어진다. 또, 레이저광(2)의 조사에 의해 발생한 풀륨(plume)(14)가 기판(7)에 닿기 때문에 화합물의 결정화가 보다 촉진된다. 그러나, 기판과 타깃의 간격이 10㎜를 초과하면, 막속으로의 산소의 도입량이 많아지거나 풀륨(14)이 기판(7)에 닿지 않기 때문에 결정성이 좋은 박막을 얻을수 없었다.For example, when the distance between the cylindrical target 5 and the substrate 7 is 1 mm, and the distance between the irradiation position of the laser light 2 and the substrate 7 is 5 mm, the substrate 7 is a cylindrical target ( Since the film is formed immediately after passing under 5), the amount of oxygen introduced into the film is reduced. In addition, the crystallization of the compound is further promoted because the pulley 14 generated by the irradiation of the laser beam 2 touches the substrate 7. However, when the distance between the substrate and the target exceeds 10 mm, the amount of oxygen introduced into the film increases or the thin film having good crystallinity cannot be obtained because the fumlium 14 does not contact the substrate 7.

이상 설명한 바와 같이 본 발명의 레이저애블레이션장치에 의하면, 연속적으로 흐르는 기판과 진공조에 의해서 둘러싸인 원통의 회전타깃과의 사이에 레이저광을 조사함으로써, 대기압으로부터 성막영역에 기판을 연속적으로 흐르게 할 수 있고, 레이저입사창이 흐려지는 일이 없고, 높은 스루풋으로 기판에 화합물박막을 형성할 수 있었다.As described above, according to the laser ablation apparatus of the present invention, the substrate can be continuously flowed from the atmospheric pressure to the film formation region by irradiating laser light between the continuously flowing substrate and the rotating target of the cylinder surrounded by the vacuum chamber. The laser incidence window was not blurred, and the compound thin film could be formed on the substrate with high throughput.

Claims (7)

레이저발진기와, 레이저광을 집광하는 렌즈와 레이저가 측면에 조사되는 회전원통타깃과, 원통타깃의 접선방향으로 움직이는 기판과, 기판상에 있고 원통탁시을 덮는 진공조와 진공조에 개방된 레이저입사구를 구비하고, 기판이 대기압의 곳에서 진공조내를 통과할때에 타깃의 증발물질이 부착하는 레이저애블레이션장치.A laser oscillator, a lens for condensing laser light, a rotating cylindrical target to which the laser is irradiated to the side, a substrate moving in a tangential direction of the cylindrical target, a vacuum chamber on the substrate and a laser inlet opened to the vacuum chamber And an evaporation material attached to the target when the substrate passes through the vacuum chamber at atmospheric pressure. 제1항에 있어서, 레이저발진기는 펄스레이저인 레이저애블레이션장치.The laser ablation apparatus of claim 1, wherein the laser oscillator is a pulsed laser. 제1항에 있어서, 타깃의 레이저조사위치를 기판의 수평방향으로 움직이게 하는 레이저애블레이션장치.The laser ablation apparatus according to claim 1, wherein the laser irradiation position of the target is moved in the horizontal direction of the substrate. 제1항에 있어서, 기판과 타깃의 간격이 10mm이하인 레이저애블레이션장치.The laser ablation apparatus of claim 1, wherein a distance between the substrate and the target is 10 mm or less. 제1항에 있어서, 레이저는 타깃과 기판 사이의 타깃쪽에 조사되는 레이저애블레이션장치.The laser ablation apparatus according to claim 1, wherein the laser is irradiated onto the target side between the target and the substrate. 제1항에 있어서, 기판은 레이저가 조사되는 방향과는 반대의 방향으로 움직이는 레이저애블레이션장치.The laser ablation apparatus of claim 1, wherein the substrate moves in a direction opposite to the direction in which the laser is irradiated. 레이저 입사구는 슬릿형상인 레이저애블레이션장치.A laser ablation apparatus having a slit shape of a laser entrance hole.
KR1019940003176A 1993-02-24 1994-02-23 Laser ablation apparatus KR960015542B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5035101A JPH06248441A (en) 1993-02-24 1993-02-24 Laser abrasion device
JP93-35101 1993-02-24

Publications (2)

Publication Number Publication Date
KR940019882A KR940019882A (en) 1994-09-15
KR960015542B1 true KR960015542B1 (en) 1996-11-18

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KR (1) KR960015542B1 (en)
CN (1) CN1092114A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101031235B1 (en) * 2005-02-02 2011-04-29 미쓰보시 다이야몬도 고교 가부시키가이샤 Method of working sintered diamond

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101031235B1 (en) * 2005-02-02 2011-04-29 미쓰보시 다이야몬도 고교 가부시키가이샤 Method of working sintered diamond

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CN1092114A (en) 1994-09-14
JPH06248441A (en) 1994-09-06
KR940019882A (en) 1994-09-15

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