KR950006279B1 - Laser abrasion device - Google Patents
Laser abrasion device Download PDFInfo
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- KR950006279B1 KR950006279B1 KR1019920014266A KR920014266A KR950006279B1 KR 950006279 B1 KR950006279 B1 KR 950006279B1 KR 1019920014266 A KR1019920014266 A KR 1019920014266A KR 920014266 A KR920014266 A KR 920014266A KR 950006279 B1 KR950006279 B1 KR 950006279B1
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- laser
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- particle
- ablation apparatus
- vacuum chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Laser Beam Processing (AREA)
Abstract
내용 없음.No content.
Description
제1도는 실시예에 있어서의 레이저어블레이션 장치의 단면도.1 is a cross-sectional view of the laser ablation apparatus in the embodiment.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 엑사이머레이저 2 : 레이저광1: excimer laser 2: laser light
3 : 렌즈 4 : 진공봉지용창3: lens 4: vacuum sealing window
5 : 진공조 6 : 진공배기펌프5: vacuum tank 6: vacuum exhaust pump
7 : 타게트 8 : yAG레이저7: target 8: yAG laser
9 : 레이저광 10,11 : 진공봉지창9: laser light 10,11: vacuum sealing window
12,13 : 레이저반사미러 14 : 기판홀더12,13: laser reflection mirror 14: substrate holder
15 : 기판 16 : 입자15 substrate 16 particles
본 발명은 박막디바이스에 이용되는 초전도체나 강유전체등의 막형성에 사용하는 레이저어블레이션 장치에 관한 것이다.The present invention relates to a laser ablation apparatus for use in film formation of superconductors, ferroelectrics, and the like used in thin film devices.
이하에, 종래의 레이저어블레이션 장치에 대해서 설명한다.Hereinafter, a conventional laser ablation apparatus will be described.
종래 레이저어블레이션(ablation)장치는 진공조내에 놓아둔 피가공물에 임계치 이상의 에너지밀도의 레이저광을 조사하면 물질이 튀어나오고, 이물질을 기판에 부착시키는 것이었다. 레이저는 일반적으로 단파장의 펄스레이저광을 고에너지밀도로 집광해서 조사하고 있다.In the conventional laser ablation apparatus, when a workpiece placed in a vacuum chamber is irradiated with a laser beam having an energy density higher than or equal to a threshold value, a substance pops out and the foreign substance adheres to a substrate. In general, lasers collect and irradiate short-wavelength pulsed laser light with high energy density.
그러나, 이와 같은 방식에서는 피가공물의 표면층이 국소적으로 단시간에 고온의 플라즈마로 되어 분출한다. 또, 표면층의 용융부가 분출하는 플라즈마의 압력에 의하여 불어 날려버려, 직경수 ㎛ 이하의 녹은 덩어리(일반적으로, 드롭레트(droplet)라 부름)로 되어 기판방향으로 향하여 간다. 이것이 박막중에 혼입하기 때문에, 박막디바이스(device)의 기본조건인 평활한 표면을 얻을 수 없다고 하는 문제가 있었다.In this manner, however, the surface layer of the workpiece is ejected into a high temperature plasma in a short time. Moreover, it blows off by the pressure of the plasma which the molten part of a surface layer blows off, and it becomes a molten mass (usually called a droplet) of diameter micrometer or less, and goes toward a board | substrate direction. Since this mixes into a thin film, there existed a problem that the smooth surface which is a basic condition of a thin film device cannot be obtained.
그래서 본 발명은, 상기 과제에 비추어, 레이저광조사시에 발생하는 드롬테트라 레이저광을 재조사하여 분해시킨다. 또, 드롭레트에 흡수되지 않았던 레이저광을 반사하여 몇번이나 드롬레트에 조사하여, 드롭레트를 증발시킬 수 있는 레이저어블레이션장치의 제공을 목적으로 한다.Therefore, in view of the above problems, the present invention re-irradiates and decomposes the dromtetra laser light generated during laser light irradiation. It is also an object of the present invention to provide a laser ablation apparatus capable of reflecting a laser beam that has not been absorbed by a droplet and irradiating the droplet to the droplet several times to evaporate the droplet.
상기 과제를 해결하기 위하여, 본 발명은, 어블레이션용 레이저발진기와, 레이저광을 집광하는 렌즈와, 진공조와, 상기 진공조에 형성된 레이저입사창과, 상기 진공조내에 있고 레이저가 조사되는 타게트(target)와, 상기 타게트상에 있는 기판홀더를 구비하고, 타게트와 기판홀더 사이에 타게트와는 평행으로 입사할 수 있는 입자분해용 레이저발진기와, 타게트의 측면에 설치하고 타게트에 평행으로 입자분해용 레이저광을 다중반사시키는 1쌍의 미러를 구비하고, 어블레이션 입자에 입자분해용 레이저광을 조사하는 레이저어블레이션 장치이다.In order to solve the above problems, the present invention provides an ablation laser oscillator, a lens for condensing laser light, a vacuum chamber, a laser incidence window formed in the vacuum chamber, and a target irradiated with a laser in the vacuum chamber. And a particle separation laser oscillator having a substrate holder on the target, the particle separation laser oscillator being able to enter between the target and the substrate holder in parallel with the target, and a laser beam for particle separation disposed on the side of the target and parallel to the target. It is provided with a pair of mirror which multireflects, and is a laser ablation apparatus which irradiates ablation particle | grains with the laser beam for particle | grains decomposition.
이 구성에 의해서, 기판에 부착한 박막속에 혼입하는 드롭레트를 충분히 억제할 수 있다.By this structure, the droplet mixed in the thin film adhering to the board | substrate can fully be suppressed.
이하, 본 발명의 일실시예를 첨부도면에 의거해서 설명한다.EMBODIMENT OF THE INVENTION Hereinafter, one Embodiment of this invention is described based on an accompanying drawing.
제1도에 있어서, 예를들면, 엑사이머(excimer)레이저(1)로부터 발진된 어블레이션용 레이저광(2)는, 렌즈(3)에서 집광되어 진공봉지용창(4)를 통과해서, 진공조(5)에 입사된다. 진공조(5)에는, 진공배기용 펌프(6)이 장착되어 있다. 레이저광(2)는, 진공조(5) 내부에 설치된 타게트(7)에 조사된다. 또, yAG레이저(8)로부터 발진된 입자분해용 레이저광(9)는, 진공봉지창(10)을 통과해서 타게트(7)의 근방으로 평행으로 입사되어, 진공봉지창(10)과 대향하는 진공봉지창(11)을 통과해서 진공조(5)의 밖으로 나간다. 진공봉지창(11)의 바깥쪽에는 레이저반사미러(12)가 설치되어 있다. 진공봉지창(10)의 바깥쪽에도 레이저방사미러(13)이 설치되어 있고, 타게트(7)의 위를 레이저광(9)가 다중반사할 수 있도록 되어 있다. 또, 타게트(7)에 대향해서 기판홀더 (holder)(14)가 진공조(5) 내부에 설치되어 있으며, 기판(15)가 장착되어 있다.In FIG. 1, for example, the ablation laser light 2 oscillated from the excimer laser 1 is condensed by the lens 3 and passes through the vacuum sealing window 4, It enters into the vacuum chamber 5. The vacuum chamber 5 is equipped with a vacuum exhaust pump 6. The laser beam 2 is irradiated to the target 7 provided in the vacuum chamber 5. Further, the laser beam for particle decomposition 9 oscillated from the yAG laser 8 passes through the vacuum encapsulation window 10 and is incident in parallel to the vicinity of the target 7 to face the vacuum encapsulation window 10. It passes through the vacuum sealing window 11 and goes out of the vacuum chamber 5. A laser reflection mirror 12 is provided outside the vacuum encapsulation window 11. The laser radiation mirror 13 is provided also in the outer side of the vacuum sealing window 10, and the laser beam 9 can multi-reflect on the target 7. As shown in FIG. A substrate holder 14 is provided inside the vacuum chamber 5 so as to face the target 7, and the substrate 15 is mounted.
이와 같은 구조에 있어서, 예를들면, 20nsec의 펄스레이저광(2)에 의해 타게트(7)의 물질은 밖으로 내쫓기고, 입자(16)으로서 기판(15)에 날아와서, 박막이 형성된다. 이때, 예를들면, 타게트(7)상의 5㎜의 곳에 평행으로 300nsec의 펄스레이저광(9)를 레이저광(2)의 발진후 1μsec된 다음에 입사시킨다. 또, 예를들면, 미러(12)와 미러(13)과의 간격을 300㎚로 하고, 미러(12)의 경사각도 θ를 0.5°로 하면, 밖으로 내쫓긴 물질의 비행로에 다중반사된 레이저광(9)가 입자(16)에 흡수된다. 이때문에, 비행중의 드롭테트에도 레이저광(9)로부터 열이 공급되어 증발속도가 빨라진다.In such a structure, for example, the substance of the target 7 is blown out by 20 nsec pulsed laser light 2, and it blows off to the board | substrate 15 as particle | grains 16, and a thin film is formed. At this time, for example, 300 nsec of the pulsed laser light 9 in parallel to 5 mm on the target 7 is made 1 µsec after oscillation of the laser light 2, and then incident. For example, when the distance between the mirror 12 and the mirror 13 is set to 300 nm, and the inclination angle θ of the mirror 12 is set to 0.5 °, the laser multi-reflected on the flight path of the material thrown out is Light 9 is absorbed by the particles 16. For this reason, heat is also supplied from the laser beam 9 to the dropte in flight, and the evaporation speed is increased.
또한, 레이저발진기(8)은 펄스발진하게 하였으나 연속발진에서도 동일효과가 있다.In addition, although the laser oscillator 8 causes pulse oscillation, it has the same effect in continuous oscillation.
본 발명의 레이저어블레이션 장치에 의하면, 타게트근방에 레이저광을 다중반사시키므로서, 어블레이션입자에 레이저광을 효율좋게 흡수시키고, 타게트로부터 분출된 드롭레트를 가열하고, 증발시킬 수 있어 기판에 부착한 박막속에 혼입하는 드롭레트를 10분의 1 이하로 할 수 있었다.According to the laser ablation apparatus of the present invention, by multi-reflecting the laser light in the vicinity of the target, it is possible to efficiently absorb the laser light in the ablation particles, and to heat and evaporate the droplet emitted from the target to adhere to the substrate. The droplet mixed in one thin film could be made one tenth or less.
Claims (4)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3-200596 | 1991-08-09 | ||
| JP91-200596 | 1991-08-09 | ||
| JP3200596A JPH0544022A (en) | 1991-08-09 | 1991-08-09 | Laser abrasion device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR930004497A KR930004497A (en) | 1993-03-22 |
| KR950006279B1 true KR950006279B1 (en) | 1995-06-13 |
Family
ID=16426988
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019920014266A KR950006279B1 (en) | 1991-08-09 | 1992-08-08 | Laser abrasion device |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH0544022A (en) |
| KR (1) | KR950006279B1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5658891B2 (en) * | 2010-02-24 | 2015-01-28 | 株式会社フジクラ | Manufacturing method of oxide superconducting film |
| CN113245097B (en) * | 2021-05-07 | 2024-05-10 | 广东旭业光电科技股份有限公司 | Efficient film plating device and method for optical lens production |
-
1991
- 1991-08-09 JP JP3200596A patent/JPH0544022A/en active Pending
-
1992
- 1992-08-08 KR KR1019920014266A patent/KR950006279B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0544022A (en) | 1993-02-23 |
| KR930004497A (en) | 1993-03-22 |
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