KR960014135A - Zirconium (Zr) -based organometallic precursors and preparation method thereof - Google Patents

Zirconium (Zr) -based organometallic precursors and preparation method thereof Download PDF

Info

Publication number
KR960014135A
KR960014135A KR1019940025904A KR19940025904A KR960014135A KR 960014135 A KR960014135 A KR 960014135A KR 1019940025904 A KR1019940025904 A KR 1019940025904A KR 19940025904 A KR19940025904 A KR 19940025904A KR 960014135 A KR960014135 A KR 960014135A
Authority
KR
South Korea
Prior art keywords
thd
zirconium
obu
preparation
based organometallic
Prior art date
Application number
KR1019940025904A
Other languages
Korean (ko)
Inventor
이완인
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019940025904A priority Critical patent/KR960014135A/en
Publication of KR960014135A publication Critical patent/KR960014135A/en

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

본 발명은 지르코늄(Zr)계 유기금속 전구체 및 이의 제조방법에 관한 것으로 좀 더 상세하게는 상기 방법은 Zr(r-OBu)4와 THD를 반응시켜 t-부톡사이드 리간드 중 일부를 THD로 치환하여 Zr(r-OBu)4-x(THD)x는 기존의 것보다 현저히 낮은 버블러 온도에서 기화가 가능하며 이를 PZT 또는 이의 유관물질 박막의 증착에 이용할 경우에는 신뢰성 및 재현성이 우수한 박막을 얻을 수 있는 잇점이 있다.The present invention relates to a zirconium (Zr) -based organometallic precursor and a method for preparing the same, and more particularly, the method comprises reacting Zr (r-OBu) 4 with THD to replace some of the t-butoxide ligands with THD. Zr (r-OBu) 4-x (THD) x can be vaporized at significantly lower bubbler temperatures than conventional ones, and when used for the deposition of PZT or its related thin films, it is possible to obtain thin films with high reliability and reproducibility. There is an advantage.

Description

지르코늄(Zr)계 유기금속 전구체 및 이의 제조방법Zirconium (Zr) -based organometallic precursors and preparation method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

Claims (5)

Zr(r-OBu)4와 THD를 반응시켜 t-부톡사이드 리간드 중 일부를 THD로 치환하여 Zr(r-OBu)4-x(THD)x를 제조하는 것을 특징으로 하는 지르코늄(Zr)계 유기금속 전구체 및 이의 제조방법.Zr (r-OBu) 4 Zirconium (Zr) -based organic, characterized in that by reacting THD with THD to replace some of the t- butoxide ligand with THD to prepare Zr (r-OBu) 4-x (THD) x Metal precursors and methods for their preparation. 제1항에 있어서, Zr(r-OBu)4-x(THD)x에서 x는 1∼3인 것을 특징으로 하는 지르코늄(Zr)계 유기금속 전구체 및 이의 제조방법.The zirconium (Zr) -based organometallic precursor according to claim 1, wherein x in Zr (r-OBu) 4-x (THD) x is 1-3. 상기 제1항 또는 제2항의 방법으로 제조되어 기화가능 온도가 120∼170℃ 인 것을 특징으로 하는 지르코늄(Zr)계 유기금속 전구체 및 이의 제조방법.A zirconium-based organometallic precursor prepared by the method of claim 1 or 2 and having a vaporization temperature of 120 to 170 ° C. and a method for manufacturing the same. 상기 제3항의 유기금속 전구체를 사용하여 PZT 박막을 제조하는 방법.A method of manufacturing a PZT thin film using the organometallic precursor of claim 3. 상기 제4항의 방법으로 제조된 PZT 박막.PZT thin film prepared by the method of claim 4. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940025904A 1994-10-10 1994-10-10 Zirconium (Zr) -based organometallic precursors and preparation method thereof KR960014135A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940025904A KR960014135A (en) 1994-10-10 1994-10-10 Zirconium (Zr) -based organometallic precursors and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940025904A KR960014135A (en) 1994-10-10 1994-10-10 Zirconium (Zr) -based organometallic precursors and preparation method thereof

Publications (1)

Publication Number Publication Date
KR960014135A true KR960014135A (en) 1996-05-22

Family

ID=66767235

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940025904A KR960014135A (en) 1994-10-10 1994-10-10 Zirconium (Zr) -based organometallic precursors and preparation method thereof

Country Status (1)

Country Link
KR (1) KR960014135A (en)

Similar Documents

Publication Publication Date Title
KR920016609A (en) Volatile Liquid Precursors for Chemical Deposition of Copper
GB1530459A (en) Ordered alloys
Holme et al. Atomic layer deposition and chemical vapor deposition precursor selection method application to strontium and barium precursors
Dezelah et al. Atomic layer deposition of Ga2O3 films from a dialkylamido-based precursor
ATE112328T1 (en) PROCESSES FOR THE CHEMICAL VAPOR DEPOSITION OF TRANSITION METALS NITRIDES.
KR920002821A (en) Diamond comprising a plurality of coating layers and a method of manufacturing the same
KR960012314A (en) Manufacturing Method of Semiconductor Device
KR960704085A (en) Group IIIA metal thin film deposition method
KR960705074A (en) A method for chemical vapor deposition of titanium nitride films at low temperatures
CA2360617A1 (en) Composition for vapor deposition, method for forming antireflection film using it, and optical element with antireflection film
JPS5522704A (en) Multilayer antireflecting film
KR890004194A (en) Method of forming titanium oxide coated film using alkoxide solution
US5258204A (en) Chemical vapor deposition of metal oxide films from reaction product precursors
GB1274947A (en) Carbonitride coatings
JP2001284344A5 (en)
HK54992A (en) Cyclic or bicyclic aluminium,gallium or indium organic compounds and their use for vapour deposition of metals on substrates
KR930013220A (en) CVD diamond growth on hydride-forming metal substrates
ES2045275T3 (en) A METHOD FOR FORMING A BISMUTE OXIDE COATING.
KR960014135A (en) Zirconium (Zr) -based organometallic precursors and preparation method thereof
KR890013038A (en) Aluminum-Nitrogen Compound and Formation Method of Aluminum Nitride Layer Using the Same
US5254530A (en) MOCVD of a-axis or b-axis oriented superconducting Bi-Sr-Ca-Cu-O films
ATE112512T1 (en) CHEMICAL VAPOR DEPOSIT OF MIXED OXIDE FILMS.
KR960014134A (en) Zirconium (Zr) -based organometallic precursors and preparation method thereof
KR920003441A (en) SiC product impregnated with CVD coated Si and its manufacturing method
WO2000060135A3 (en) Method of producing thin, poorly soluble coatings

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application