KR960013783B1 - Oscillation circuit - Google Patents
Oscillation circuit Download PDFInfo
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- KR960013783B1 KR960013783B1 KR1019940017798A KR19940017798A KR960013783B1 KR 960013783 B1 KR960013783 B1 KR 960013783B1 KR 1019940017798 A KR1019940017798 A KR 1019940017798A KR 19940017798 A KR19940017798 A KR 19940017798A KR 960013783 B1 KR960013783 B1 KR 960013783B1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
- H03B5/1864—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a dielectric resonator
- H03B5/187—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a dielectric resonator the active element in the amplifier being a semiconductor device
- H03B5/1876—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a dielectric resonator the active element in the amplifier being a semiconductor device the semiconductor device being a field-effect device
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/02—Details
- H03B5/04—Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/006—Functional aspects of oscillators
- H03B2200/0088—Reduction of noise
- H03B2200/009—Reduction of phase noise
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2202/00—Aspects of oscillators relating to reduction of undesired oscillations
- H03B2202/08—Reduction of undesired oscillations originated from the oscillator in circuit elements external to the oscillator by means associated with the oscillator
- H03B2202/082—Reduction of undesired oscillations originated from the oscillator in circuit elements external to the oscillator by means associated with the oscillator by avoiding coupling between these circuit elements
- H03B2202/084—Reduction of undesired oscillations originated from the oscillator in circuit elements external to the oscillator by means associated with the oscillator by avoiding coupling between these circuit elements through shielding
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- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
Description
제1도는 종래의 초고주파 발진회로 구성도.1 is a configuration diagram of a conventional ultra-high frequency oscillation circuit.
제2도는 본 발명의 초고주파 발진회로 구성도.2 is a schematic diagram of a high frequency oscillation circuit of the present invention.
제3도는 제2도의 발진증폭단의 상세 회로 구성도.3 is a detailed circuit diagram of the oscillation amplifier stage of FIG.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
5 : 유전체 공진자 6, 7 : 마이크로 스트립5: dielectric resonator 6, 7: micro strip
19 : 써어미스터 20 : DC/DC 변환회로부19: Thermistor 20: DC / DC converter circuit
21 : 발진증폭회로부 22 : 비퍼증폭 회로부21: oscillation amplifier circuit part 22: beeper amplifier circuit part
23 : 신호 궤완 및 출력회로부 27 : 정합회로부23: signal oscillation and output circuit portion 27: matching circuit portion
31 : 공진회로부31: resonant circuit part
본 발명은 무선통신기기의 고주파 프론트 엔드(RF Front End)에 주파수 변환에 필요한 초고주파 국부발진회로에 관한 것으로, 특히 디지탈 데이타 전송 방식에서 요구되는 발진 주파수의 높은 안정도와 낮은 위상잡음 특성을 만족하게 되는 초고주파 발진회로에 관한 것이다.The present invention relates to an ultra-high frequency local oscillation circuit required for frequency conversion in a radio frequency front end of a wireless communication device, and particularly satisfies the high stability and low phase noise characteristics of an oscillation frequency required in a digital data transmission method. It relates to an ultra high frequency oscillation circuit.
디지탈 데이타를 전송하는 무선 통신장치용 고주파 프론트 엔드에서는 희망하는 데이타 전송특성을 만족하게 위해 고성능의 초구주파 국부 발진회로가 요구된다.A high frequency front end for a wireless communication device that transmits digital data requires a high performance local frequency local oscillation circuit to satisfy desired data transmission characteristics.
이러한 제한된 발진회로 구성을 얻기 위해서 일반적으로 유전체 공진자를 이용하여 발진을 시키고 있다.In order to obtain such a limited oscillation circuit configuration, oscillation is generally performed using a dielectric resonator.
제1도는 종래의 유전체 공진 발진회로의 한 예를 보이고 있다.1 shows an example of a conventional dielectric resonance oscillation circuit.
여기에서 참조되는 바와같이 유전체 공진발진회로는 기준신호(Ref in)를 증폭하여 PLL(11)에 전달하는 기준신호 증폭회로부(10)와, 상기 기준신호와 신호궤환부(15)를 통하여 입력되는 OSC 출력신호를 위상비교하여 VT전압을 발생하는 PLL(11)과, 상기 PLL(11)의 VT출력을 필터링하는 루프필터 회로부(12)와, 상기 루프필터 회로부(12)에서 출력되는 VT전압신호에 따라 발진주파수가 결정되는 VCO(13)와, 상기 VCO(13)의 출력을 증폭하여 RF 프론트 엔드용 OSC로 출력하는 버퍼 증폭회로부(14, 16)를 포함한다.As described herein, the dielectric resonance oscillator circuit is inputted through a reference signal amplifier circuit unit 10 for amplifying a reference signal (Ref in) and transmitting it to the PLL (11), and the reference signal and the signal feedback unit (15) PLL 11 for generating V T voltage by comparing the OSC output signal, loop filter circuit 12 for filtering the V T output of PLL 11, and V output from the loop filter circuit 12. A VCO 13 having an oscillation frequency determined according to a T voltage signal, and buffer amplifier circuits 14 and 16 for amplifying the output of the VCO 13 and outputting the amplified output to an OSC for RF front end.
상기 VCO(13)에서는 유전체 공진자(5)와 이 유전체 공진자(5)를 사이에 두고 나란히 배치되는 마이크로 스트립(6, 7)에 의해 공진 주파수가 형성되고 이러한 공진 주파수는 발진 증폭기(8)에서 증폭되어 발진신호를 출력하게 된다.In the VCO 13, a resonant frequency is formed by the dielectric resonator 5 and the microstrips 6 and 7 arranged side by side with the dielectric resonator 5 interposed therebetween. It is amplified at and outputs oscillation signal.
이때 마이크로 스트립(7)과 유전체 공진자(5)와의 사이에서 형성되는 공진값은 루프 필터 회로부(12)의 VT전압 출력에 따른 바랙터 다이오드(9)의 용량에 의해 일정한 값으로 전압제어 되게 된다.At this time, the resonance value formed between the microstrip 7 and the dielectric resonator 5 may be voltage controlled to a constant value by the capacity of the varactor diode 9 according to the V T voltage output of the loop filter circuit unit 12. do.
이와같은 종래의 초고주파 발진회로는 PLL 루프필터회로등의 고급회로를 채용하고 있어 비교적 우수한 위상 잡음 특성과 발진 주파수의 안정성을 확보할 수는 있으나, 구성 부품수의 증가로 인한 원가상승 및 사이즈 증가를 피할 수 없다.The conventional ultra-high frequency oscillator circuit adopts advanced circuits such as PLL loop filter circuit, so that it is possible to secure relatively superior phase noise characteristics and stability of oscillation frequency, but the cost increase and size increase due to the increase of the number of components can not avoid.
특히 PLL 회로의 채택은 어떠한 구성을 갖는가에 따라 로킹 신뢰성이 결정되므로, 상기 종래의 회로가 반드시 높은 신뢰도를 가지고 동작되는 것을 아니다.In particular, since the locking reliability is determined by the configuration of the PLL circuit, the conventional circuit is not necessarily operated with high reliability.
본 발명의 목적은 상기한 바와같은 종래 기술에서의 문제점을 해결하면서 어떠한 발진 특성의 저하를 가져오지 않는 초고주파 발진회로를 제공하는데 있다.SUMMARY OF THE INVENTION An object of the present invention is to provide an ultra high frequency oscillation circuit which solves the problems in the prior art as described above and does not cause any deterioration of oscillation characteristics.
본 발명의 특징은 유전체 공징회로부와, 상기 유전체 공징회로의 공진신호를 증폭 발진하는 발진증폭 회로부와, 써어미스터에 의해 검출되는 온도 보정 계수에 따라 VT전압을 발생하여 상기 발진증폭 회로부의 발진 출력 주파수를 제어하는 DC/DC변환회로부와, 상기 발진 증폭회로부의 출력의 로드 폴링을 방지하기 위한 버퍼 증폭회로부와, 상기 버퍼 증폭회로부의 출력을 공징회로부에 궤환하고 또한 OSC의 최종 출력을 내는 신호 궤환 및 출력 회로부를 포함하는 초고주파 발진회로에 있다.The present invention is characterized in that the dielectric amplification circuit portion, the oscillation amplifier circuit portion for amplifying and oscillating the resonance signal of the dielectric resonance circuit and the oscillation output of the oscillation amplifier circuit portion by generating a V T voltage according to the temperature correction coefficient detected by the thermistor A DC / DC conversion circuit section for controlling the frequency, a buffer amplification circuit section for preventing load polling of the output of the oscillation amplifier circuit section, a signal feedback for returning the output of the buffer amplification circuit section to a voicing circuit section and producing a final output of the OSC. And an ultra high frequency oscillation circuit including an output circuit section.
이하 첨부한 도면에 기초하여 본 발명을 설명한다.Hereinafter, the present invention will be described based on the accompanying drawings.
제2도는 본 발명에 따른 초고주파 발진회로의 구성도이다.2 is a configuration diagram of an ultra high frequency oscillation circuit according to the present invention.
여기에서 참조되는 바와같이, 유전체 공진자(5)르 사이에 두고 나란히 배치된 λ/4길이의 제1, 2 마이크로 스트립(6, 7)으로 구성된 유전체 공진회로부(31)의 공진 출력이 발진 증폭회로부(21)에 입력되게 연결한다.As referred to herein, the resonance output of the dielectric resonant circuit portion 31 composed of the first and second micro strips 6 and 7 of λ / 4 length arranged side by side between the dielectric resonators 5 oscillates and amplifies. Connect to be input to the circuit portion 21.
상기 우전체 공징회로부(31)는 급속판에 의한 차폐 구조를 갖는다.The right-circuit resonator circuit part 31 has a shielding structure by a quick plate.
상기 발진증폭회로부(21)에는 그 내부의 발진증폭 트랜지스터의 게이트-소오스간 용량(CGS)을 가변시켜 발진주파수를 변경시키게 되는 DC/DC 변환회로부(20)의 VT전류 바이어스가 공급되게 연결한다.The oscillation amplifier circuit 21 is connected to supply the V T current bias of the DC / DC conversion circuit 20 to change the oscillation frequency by varying the gate-source capacitance C GS of the oscillation amplifier transistor therein. do.
상기 DC/DC 변환회로부(20)의 VT출력은 써어미스터(19)에 의해 감지되는 온도변화에 따른 저항값에 의존하게 구성한다.The V T output of the DC / DC conversion circuit unit 20 is configured to depend on the resistance value according to the temperature change sensed by the thermistor 19.
상기 발진 증폭회로부(21)의 출력은 발진 출력의 로드폴링을 방지하기 위한 버퍼 증폭회로부(22)를 거쳐 신호궤환 및 출력회로부(23)에 인가되게 연결한다.The output of the oscillation amplification circuit portion 21 is connected to the signal feedback and output circuit portion 23 via a buffer amplification circuit portion 22 to prevent load polling of the oscillation output.
상기 신호 궤환 및 출력회로부(23)는 저항(24~26)에 의한 신호분배 회로로 구성되며, 일부는 OSC 발진 출력단에, 일부는 상기 공진회로부(31)의 제2마이크로 스트립(7)으로 전달되게 구성한다.The signal feedback and output circuit unit 23 is composed of a signal distribution circuit by the resistors 24 to 26, part of which is transmitted to the OSC oscillation output terminal, and part of which is transmitted to the second micro strip 7 of the resonance circuit unit 31. To be configured.
제3도는 상기 발진증폭 회로부(21)의 상세회로구성도로서, 공진회로부(31)의 제1 마이크로 스트립(6)의 공진신호를 게이트측으로 입력하는 FET(28)의 드레인측에는 정합 회로부(27)를 거친 상기 DC/DC 변환회로부(20)의 VT바이어스 전류가 공급되게 연결하고, 상기 FET(28)의 소오스 측에는 신호 바이패스 콘덴서(29), 바이어스 저항(30) 및 버퍼 증폭회로부(22) 측으로의 출력저항(31)을 연결한다.3 is a detailed circuit diagram of the oscillation amplifier circuit 21. The matching circuit section 27 is provided on the drain side of the FET 28 for inputting the resonance signal of the first microstrip 6 of the resonance circuit section 31 to the gate side. The V / T bias current of the DC / DC conversion circuit unit 20 passed through is supplied, and the signal bypass capacitor 29, the bias resistor 30, and the buffer amplification circuit unit 22 are connected to the source side of the FET 28. Connect the output resistor 31 to the side.
이와같이 구성된 본 발명의 작용 및 효과를 설명하면 다음과 같다.Referring to the operation and effects of the present invention configured as described above are as follows.
먼저, 공진회로부(31)의 유전체 공진자(5)는 등가적으로 RLC 병렬회로로 표현될 수 있으며, 이러한 RLC갑에 의한 공진신확 L갑을 가지는 λ/4길이의 마이크로 스트립(6)에 유도 결합되어 발진 증폭회로부(21)의 FET(28)의 게이트측에 입력된다. 상기 공진회로부(31)는 금속차폐되어 있어 높은 Q값이 얻어지게 된다.First, the dielectric resonator 5 of the resonant circuit portion 31 can be equivalently represented as an RLC parallel circuit, and inductively coupled to the λ / 4 length microstrip 6 having the resonant reliability L by the RLC pack. The input signal is input to the gate side of the FET 28 of the oscillation amplifier circuit 21. The resonant circuit part 31 is shielded with metal so that a high Q value is obtained.
이때 상기 FET(28)의 드레인측에는 써어미스터(19)에 의해 결정된 DC/DC 변환회로부(20)의 VT바이어스 전류가 공급되므로, 그의 소오스측에서는 발진출력이 나타나게 된다.At this time, since V T the bias current of the DC / DC conversion circuit 20 is determined by the drain side sseoeo Mr 19 of the FET (28) is supplied, is displayed the oscillation output side of his source.
이러한 발진 출력은 버퍼 증폭회로부(22)를 거쳐 신호 궤환 및 출력 회로부(23)를 통하여 일부는 RF 프론트 엔드용 발진신호로 출력되고 일부는 상기 유전체 공진 회로부(31)의 λ/4길이의 제2 마이크로 스트립(7)에 궤환되어, 공진회로부(31)의 공진주파수에 따른 발진을 유지하게 된다.This oscillation output is partially output as an oscillation signal for the RF front end through the signal feedback and output circuit section 23 via the buffer amplifier circuit section 22, and part of the second of the? / 4 length of the dielectric resonance circuit section 31. The microstrip 7 is fed back to maintain oscillation in accordance with the resonance frequency of the resonance circuit 31.
한편, 온도가 변화하면 발진회로의 구성소자의 특성 변화에 따라 그 발진주파수가 변화하게 되지만, 본 발명은 써어미스터(19)의 DC/DC 변환회로부(20)와 발진증폭 FET(28)의 CGS에 의해 온도변화에 따른 발진 주파수 변동을 보정하게 된다. 이를 구체적으로 설명하면 다음과 같다. 발진회로 주변의 온도가 변화하는 것에 따른 써어미스터(19)는 자체의 저항값은 부저항 계수를 가지고 변화한다.On the other hand, when the temperature changes, the oscillation frequency changes according to the characteristic change of the components of the oscillation circuit. However, in the present invention, the DC / DC conversion circuit 20 of the thermistor 19 and the C of the oscillation amplifier FET 28 are changed. GS compensates for oscillation frequency fluctuations caused by temperature changes. This will be described in detail as follows. As the temperature of the oscillation circuit changes, the thermistor 19 changes its resistance value with a negative resistance coefficient.
이러한 써어미스터(19)의 저항값 변화는 DC/DC 변환회로부(20)의 Vt출력을 변화시킨다.This resistance change of the thermistor 19 changes the V t output of the DC / DC conversion circuit section 20.
이에 따라 발진증폭 회로부(21)를 구성하는 FET(28)의 드레인측에 공급되는 바이어스 전류가 변화된다.As a result, the bias current supplied to the drain side of the FET 28 constituting the oscillation amplifier circuit portion 21 changes.
상기 FET(28)의 드레인측 바이어스 전류변화는 결국 FET(28)의 게이트-소오스간 용량(CGS)을 가변시켜 공진회로부(31)의 공진주파수를 변화시키게 되므로 발진출력 주파수를 안정화시키게 된다.The drain side bias current change of the FET 28 eventually changes the resonant frequency of the resonant circuit 31 by varying the gate-source capacitance C GS of the FET 28, thereby stabilizing the oscillation output frequency.
이상에서 설명한 바와같은 본 발명은 발진주파수 변동보정을 위한 고가의 바랙터 다이오드와 PLL 회로를 발진회로에서 제거시킬 수 있어 발진회로의 원가 및 구성소자수를 줄일 수 있다. 또한 전체적인 회로구성의 간략화와 저가부품으로 안정된 발진출력특성과 낮은 위상 잡음 특성을 유지할 수 있게 된다.As described above, the present invention can remove expensive varactor diodes and PLL circuits for oscillation frequency fluctuation correction from the oscillation circuit, thereby reducing the cost and the number of components of the oscillation circuit. In addition, the overall circuit configuration is simplified and low-cost components can maintain stable oscillation output characteristics and low phase noise characteristics.
특히 초고주파용 발진회로의 차폐 구조에 있어 공진회로부만을 금속 차폐시키게 되므로 회로성능(Q 값)을 높일 수 있게 된다.In particular, in the shielding structure of the ultra-high frequency oscillation circuit, only the resonant circuit part is shielded by the metal, thereby increasing the circuit performance (Q value).
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940017798A KR960013783B1 (en) | 1994-07-22 | 1994-07-22 | Oscillation circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940017798A KR960013783B1 (en) | 1994-07-22 | 1994-07-22 | Oscillation circuit |
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| KR960006244A KR960006244A (en) | 1996-02-23 |
| KR960013783B1 true KR960013783B1 (en) | 1996-10-10 |
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| KR1019940017798A KR960013783B1 (en) | 1994-07-22 | 1994-07-22 | Oscillation circuit |
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