KR960006244A - Ultra high frequency oscillation circuit - Google Patents

Ultra high frequency oscillation circuit Download PDF

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Publication number
KR960006244A
KR960006244A KR1019940017798A KR19940017798A KR960006244A KR 960006244 A KR960006244 A KR 960006244A KR 1019940017798 A KR1019940017798 A KR 1019940017798A KR 19940017798 A KR19940017798 A KR 19940017798A KR 960006244 A KR960006244 A KR 960006244A
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KR
South Korea
Prior art keywords
circuit
oscillation
output
signal
high frequency
Prior art date
Application number
KR1019940017798A
Other languages
Korean (ko)
Other versions
KR960013783B1 (en
Inventor
윤기호
Original Assignee
이형도
삼성전기 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이형도, 삼성전기 주식회사 filed Critical 이형도
Priority to KR1019940017798A priority Critical patent/KR960013783B1/en
Publication of KR960006244A publication Critical patent/KR960006244A/en
Application granted granted Critical
Publication of KR960013783B1 publication Critical patent/KR960013783B1/en

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
    • H03B5/1864—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a dielectric resonator
    • H03B5/187—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a dielectric resonator the active element in the amplifier being a semiconductor device
    • H03B5/1876—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a dielectric resonator the active element in the amplifier being a semiconductor device the semiconductor device being a field-effect device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/02—Details
    • H03B5/04—Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006—Functional aspects of oscillators
    • H03B2200/0088—Reduction of noise
    • H03B2200/009—Reduction of phase noise
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2202/00—Aspects of oscillators relating to reduction of undesired oscillations
    • H03B2202/08—Reduction of undesired oscillations originated from the oscillator in circuit elements external to the oscillator by means associated with the oscillator
    • H03B2202/082—Reduction of undesired oscillations originated from the oscillator in circuit elements external to the oscillator by means associated with the oscillator by avoiding coupling between these circuit elements
    • H03B2202/084—Reduction of undesired oscillations originated from the oscillator in circuit elements external to the oscillator by means associated with the oscillator by avoiding coupling between these circuit elements through shielding

Landscapes

  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

무선통신 장비의 RF 프론트 앤드용 초고주파 발진회로의 안정된 주파수 특성과 낮은 위상잡음 특성을 확보할 수 있으며 경쟁력 제고를 위해 저가격화를 가능하게 하는 본 발명의 초고주파 발진회로는, 유전체 공진자(5)를 사이에 두고 제1,2마스크로 스트립(6,7)을 나란히 배치한 공진회로부(31);상기 제1마이크로 스트립(6)에서 인출된 공진신호를 증측하여 DC/DC 변환회로부(20)의 V1출력으로 바이어스되는 발진증촉 회로부(21);와, 상기 발진증폭 회로부(21)의 발진신호를 증폭하는 로드폴링 방지용 버퍼증폭 회로부(22); 와 상기 버퍼 증폭회로부(22)의 발진출력신호의 일부 제2마이크로 스트립(7)으로 궤환하는 신호궤환 및 출력회로부(23);와, 상기 DC/DC변환회로부(20)의 V1출력을 변경하는 온도-저항값 변환 특성의 써어미스터(19);를 포함한다.The ultra high frequency oscillation circuit of the present invention, which can secure stable frequency characteristics and low phase noise characteristics of the RF front end ultra high frequency oscillation circuit for wireless communication equipment, and enables low cost for enhancing competitiveness, has a dielectric resonator 5 A resonant circuit part 31 having the strips 6 and 7 arranged side by side with the first and second masks interposed therebetween; and by increasing the resonant signal drawn from the first micro strip 6, An oscillation amplifier circuit portion 21 biased to the V 1 output; and a load-polling prevention buffer amplifier circuit 22 for amplifying the oscillation signal of the oscillation amplifier circuit 21; And a signal feedback and output circuit unit 23 for returning a part of the oscillation output signal of the buffer amplifying circuit unit 22 to the second microstrip 7, and changing the V 1 output of the DC / DC conversion circuit unit 20. A thermistor 19 having a temperature-resistance value conversion characteristic.

Description

초 고주파 발진회로Ultra high frequency oscillation circuit

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명의 초고주파 발진회로 구성도.2 is a schematic diagram of a high frequency oscillation circuit of the present invention.

제3도는 제2도의 발진증폭단의 상세 회로 구성도.3 is a detailed circuit diagram of the oscillation amplifier stage of FIG.

Claims (3)

유전체 공진자(5)를 사이에 두고 제1, 2 마이크로 스트립(6, 7)을 나란히 배치한 공진회로부(31); 상기 제1마이크로 스트립(6)에서 인출된 공진시니호를 증폭하며 DC/DC 변환회로부(20)의 Vt출력으로 바이어스되는 발진증폭 회로부(21); 상기 발진증폭 회로부(21)의 발진신호를 증폭하는 로드폴링 방지용 버퍼증폭 회로부(22); 상기 버퍼 증폭회로부(22)의 발진출력 신호의 일부 제2 마이크로 스티립(7)으로 궤환하는 신호궤환 및 출력회로부(23); 상기 DC/DC 변환회로부(20)의 Vt출력을 변경하는 온도-저항값 변환 특성의 써어미스터(19);를 포함하는 것을 특징으로 하는 초고주파 발진회로.A resonant circuit part 31 having the first and second micro strips 6 and 7 arranged side by side with the dielectric resonator 5 interposed therebetween; An oscillation amplifier circuit 21 amplifying the resonance signal drawn from the first microstrip 6 and biased to the V t output of the DC / DC conversion circuit 20; A load polling prevention buffer amplifier circuit 22 for amplifying the oscillation signal of the oscillation amplifier circuit 21; A signal feedback and output circuit section 23 for returning a part of the oscillation output signal of the buffer amplification circuit section 22 to the second microstrip 7; And a thermistor (19) having a temperature-resistance value conversion characteristic for changing the V t output of the DC / DC conversion circuit section (20). 제1항에 있어서, 상기 발진증폭 회로부(21)는 DC/DC 변환회로부(20)의 Vt출력에 따른 바이어스 전류 변화에 의해 게이트-소오스간 용량(CGS)이 변화되어 공진회롱부의 공진 주파수를 변화시키는 FET(28)를 포함하는 것을 특징으로 하는 초고주파 발진회로.The resonance frequency circuit 21 of claim 1, wherein the oscillation amplifier 21 changes the gate-source capacitance C GS by a bias current change according to the V t output of the DC / DC converter 20. Ultra high frequency oscillation circuit comprising a FET (28) for changing the. 제1항에 있어서, 상기 공진회로부(31)는 금속구조물로 차폐되는 것을 특징으로 하는 초고주파 발진회로.The ultra high frequency oscillation circuit according to claim 1, wherein the resonant circuit part (31) is shielded by a metal structure. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940017798A 1994-07-22 1994-07-22 Oscillation circuit KR960013783B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940017798A KR960013783B1 (en) 1994-07-22 1994-07-22 Oscillation circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940017798A KR960013783B1 (en) 1994-07-22 1994-07-22 Oscillation circuit

Publications (2)

Publication Number Publication Date
KR960006244A true KR960006244A (en) 1996-02-23
KR960013783B1 KR960013783B1 (en) 1996-10-10

Family

ID=19388600

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940017798A KR960013783B1 (en) 1994-07-22 1994-07-22 Oscillation circuit

Country Status (1)

Country Link
KR (1) KR960013783B1 (en)

Also Published As

Publication number Publication date
KR960013783B1 (en) 1996-10-10

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