KR960012425A

KR960012425A - Device Separator Formation Method of Semiconductor Device

Info

Publication number: KR960012425A
Application number: KR1019940022551A
Authority: KR
Inventors: 조병진
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1994-09-08
Filing date: 1994-09-08
Publication date: 1996-04-20

Abstract

본 발명은 반도체 소자의 소자분리막 형성방법에 관한 것으로, 버즈 비크(Bird's Beak)의 생성을 방지하기 위하여 실리콘 기판의 소자 분리 영역 (Isolation region)중앙의 소정 부우를 리세스(Recess)구조가 되도록 1차 식각한 후 상기 소자 분리영역 전체를 2차 식각하여 2-단(2-Step)리세스 구조의 트렌치 (Trench)를 형성한 다음 필드 산화(Field oxidation)공정을 실시하므로써 평탄화와 동시에 버즈 비크의 생성이 방지되어 넓은 활성영역의 확보가 가능하고 소자분리 특성이 향상될 수 있도록 한 반도체 소자의 소자분리막 형성방법에 관한 것이다.The present invention relates to a method of forming a device isolation film of a semiconductor device, in order to prevent the formation of a bird's beak so that a predetermined boolean in the center of an isolation region of a silicon substrate becomes a recess structure. After the second etching, the entire isolation region of the device is second-etched to form a trench having a 2-step recess structure, and then subjected to a field oxidation process to planarize and simultaneously The present invention relates to a method of forming a device isolation film of a semiconductor device to prevent generation, to ensure a wide active area, and to improve device isolation characteristics.

Description

Device Separator Formation Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1A 내지 제1G도는 본 발명에 따른 반도체 소자의 소자 분리막 형성 방법을 설명하기 위한 소자의 단면도.1A to 1G are cross-sectional views of a device for explaining a device isolation film forming method of a semiconductor device according to the present invention.

Claims

A method of forming a device isolation film of a semiconductor device, comprising: forming an oxide barrier layer having a multilayer structure on a silicon substrate on which a pad oxide film is formed, and then patterning the oxide barrier layer so that the pad oxide film of the device isolation region is exposed; A first nitride film is deposited on the upper surface, and an etching process is performed to form first nitride film spacers on both sidewalls of the patterned oxide barrier layer, and then a first etching process is performed to sequentially expose the exposed pad oxide film and the silicon substrate. After etching, removing the first nitride spacer and removing the exposed pad oxide layer, and performing a second etching process from the step to form a two-stage recess structure trench in the silicon substrate of the device isolation region. And depositing a second nitride film on the entire upper surface from the step and performing an etching process. Forming a second nitride spacer on the oxide barrier layer on both sides of the region and the sidewalls of the exposed silicon substrate, followed by an oxidation process and sequentially removing the oxide barrier layer and the pad oxide layer. Separator Formation Method.

The method of claim 1, wherein the oxide barrier layer is formed by sequentially depositing a buffer polysilicon, a nitride film, and a TEOS.

The method of claim 1, wherein the first nitride layer is formed to a thickness of 1000 to 1500 Å, and the second nitride layer is formed to a thickness thin enough to be oxidized during an oxidation process.

The method of claim 3, wherein the second nitride film is formed to a thickness of about 70 to about 130 microns.

The semiconductor of claim 1, wherein the silicon substrate is etched to a depth of about 500 to 1000 microns in the first etching process, and the silicon substrate is etched to a depth of about 300 to 500 microns in the second etching process. Device isolation film formation method of the device.

※ Note: The disclosure is based on the initial application.