KR960011911B1 - Method for forming a patterned resist - Google Patents
Method for forming a patterned resist Download PDFInfo
- Publication number
- KR960011911B1 KR960011911B1 KR92008601A KR920008601A KR960011911B1 KR 960011911 B1 KR960011911 B1 KR 960011911B1 KR 92008601 A KR92008601 A KR 92008601A KR 920008601 A KR920008601 A KR 920008601A KR 960011911 B1 KR960011911 B1 KR 960011911B1
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- patterned resist
- patterned
- resist
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Drying Of Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11582691 | 1991-05-21 | ||
JP11762492A JPH05142788A (ja) | 1991-05-21 | 1992-05-11 | レジストパターンの形成方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960011911B1 true KR960011911B1 (en) | 1996-09-04 |
Family
ID=26454254
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR92008601A KR960011911B1 (en) | 1991-05-21 | 1992-05-21 | Method for forming a patterned resist |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPH05142788A (ko) |
KR (1) | KR960011911B1 (ko) |
DE (1) | DE4216888C2 (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07142349A (ja) * | 1993-11-16 | 1995-06-02 | Mitsubishi Electric Corp | 現像工程におけるフォトレジストパターンの倒れを防止する方法 |
KR970002427B1 (en) * | 1994-01-14 | 1997-03-05 | Lg Semicon Co Ltd | Fine patterning method of photoresist film |
-
1992
- 1992-05-11 JP JP11762492A patent/JPH05142788A/ja not_active Withdrawn
- 1992-05-21 DE DE19924216888 patent/DE4216888C2/de not_active Expired - Fee Related
- 1992-05-21 KR KR92008601A patent/KR960011911B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE4216888C2 (de) | 1998-03-19 |
DE4216888A1 (de) | 1992-11-26 |
JPH05142788A (ja) | 1993-06-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 19990820 Year of fee payment: 4 |
|
LAPS | Lapse due to unpaid annual fee |