KR960011255B1 - Wafer detecting apparatus for miss-pattern - Google Patents
Wafer detecting apparatus for miss-pattern Download PDFInfo
- Publication number
- KR960011255B1 KR960011255B1 KR1019930003947A KR930003947A KR960011255B1 KR 960011255 B1 KR960011255 B1 KR 960011255B1 KR 1019930003947 A KR1019930003947 A KR 1019930003947A KR 930003947 A KR930003947 A KR 930003947A KR 960011255 B1 KR960011255 B1 KR 960011255B1
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- South Korea
- Prior art keywords
- wafer
- light
- lens
- mirror
- pattern
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Abstract
Description
제1도는 본 발명에 의한 불량 패턴 웨이퍼 검출장치도.1 is a bad pattern wafer detection apparatus according to the present invention.
제2도는 CRT상에 반사신호가 나타나는 원리도.2 is a principle diagram in which reflected signals appear on a CRT.
제3도는 감광막이 코팅된 불량 패턴 웨이퍼.3 is a bad pattern wafer coated with a photosensitive film.
제4도는 다중현상 또는 이중노광에 의한 불량 패턴 웨이퍼.4 is a bad pattern wafer by multi-development or double exposure.
제5도는 정상 패턴 웨이퍼.5 is a normal pattern wafer.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 레이저 파장 발생장치 2 : 분광기1 laser wavelength generator 2 spectrometer
3 : 제1렌즈 4 : 필터3: first lens 4: filter
5 : 제1거울 6 : 제2렌즈5: first mirror 6: second lens
7 : 제2거울 8 : 자동눈금측정기7: second mirror 8: automatic scale measuring instrument
9 : 자동 제로 눈금측정기 10 : 타원형 거울9: automatic zero scale meter 10: oval mirror
11 : 감광막 12 : 산화막11: photosensitive film 12: oxide film
13 : 필드 산화막 14 : 반도체기판13 field oxide film 14 semiconductor substrate
본 발명은 반도체 제조시 포토마스크(Photomask) 또는 식각 공정에서 발생하기 쉬운 불량 패턴(Pattern)웨이퍼(Wafer) 검출 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a defective pattern wafer detection apparatus that is likely to occur in a photomask or an etching process in semiconductor manufacturing.
일반적으로 포토마스크 패턴이 형성되지 않는 불량 패턴 웨이퍼는 포토 공정(Photo Process)에 있어서, 접착제 HMDS(Hexamet hylisilane) 도포를 하지 않았을 경우에는 코팅(Coating)시 감광막 부족하게 된다. 또한 노광시 장치 고장이나 스위치(Switch)조작 잘못으로 인해 노광이 안되었을 경우에는 이중현상 또는 현상이 되지 않게 되고, 프로그램 조작 실수 등으로 인하여 발생하게 된다.In general, a defective pattern wafer in which a photomask pattern is not formed is insufficient in the photosensitive film during coating when the adhesive HMDS (Hexamet hylisilane) is not applied in the photo process. In addition, when exposure is not performed due to a device failure or a switch operation error during exposure, a double phenomenon or a phenomenon may not occur, and a program operation error may occur.
상기 설명과 같이 반도체 제조공정중 포토마스크 또는 식각 공정시 장비고장, 프로그램 조작 잘못, 작업실수 등으로 인한 포토마스크의 불량 패턴이 작업의 대량화, 고도화로 인하여 많이 발생한다.As described above, defective patterns of the photomask due to equipment failure, program operation error, and mistakes in the photomask or etching process during the semiconductor manufacturing process are frequently generated due to the increase in the volume and height of the work.
따라서 불량 패턴 웨이퍼는 전수검사를 통해 식별해야 하나, 실질적인 전수검사가 어려우므로 샘플(Sample)검사를 할 수밖에 없다.Therefore, the defective pattern wafer should be identified through a full inspection, but since the actual full inspection is difficult, it is inevitable to perform a sample inspection.
그러나 불량 패턴 웨이퍼가 상품 한 무더기(Lot)중에 하나 내지 열개가 존재할 경우에는 샘플 검사에서도 발견되지 않는 문제점이 발생한다.However, if one to ten of the defective pattern wafers are in a commodity lot, a problem occurs that is not found even in sample inspection.
따라서, 본 발명은 반도체 제조공정시 발생하는 포토마스크의 불량 패턴 웨이퍼를 쉽고 빠르고 간단하게 식별해 내는 불량 패턴 웨이퍼 검출장치를 제공하는데 그 목적이 있다.Accordingly, an object of the present invention is to provide a defect pattern wafer detection apparatus for easily and quickly and simply identifying a defective pattern wafer of a photomask generated in a semiconductor manufacturing process.
상기 목적을 달성하기 위하여 본 발명은 레이저 발생장치와 상기 레이저 발생장치에서 발생된 빛의 경로를 바꾸는 분광기와 상기 분광기를 통한 빛을 집속시키는 제1렌즈와 상기 제1렌즈에서 집속된 빛의 경로를 바꾸는 제1거울과 상기 제1거울에 의해 반사된 빛이 촛점을 갖도록 하는 제2렌즈와 상기 제2렌즈에 의해 맞추어진 촛점 위치에 위치하여 회전하면서 웨이퍼상에 빛을 조사하는 제2거울과 웨이퍼의 좌우측에 위치하여 웨이퍼상을 스캔닝(scanning)하는 빛을 캐리브레이션(Calibration)하는 자동 눈금측정기 및 자동제로(Zero) 눈금측정기를 포함하여 이루어지는 것을 특징으로 한다.In order to achieve the above object, the present invention provides a laser generator, a spectroscope for changing the path of light generated by the laser generator, a first lens for focusing light through the spectrometer, and a path of light focused at the first lens. The second mirror and the wafer for irradiating light onto the wafer while rotating while being positioned at a focal point aligned by the second lens and the second lens to change the first mirror and the light reflected by the first mirror Located on the left and right of the characterized in that it comprises an automatic calibrator and an automatic zero (calibrator) for calibrating the light (scanning) the scanning on the wafer.
이하 첨부된 도면을 참조하여 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
제1도 및 제2도는 불량 패턴 웨이퍼 검출 장치의 구조로서, 레이저(Laser) 파장 발생 장치(1)로부터 나온 빛은 분광기(2)를 통해 180° 반사되어 제1렌즈(3)에서 접속되고 다시 필터(Filter) 통해 일정한 파장으로 걸러져서 제1거울(5)에 반사되어 제2렌즈(6)으로 보내진다. 상기 제2렌즈(6)를 통과한 빛을 회전하는 제2거울(Rotating Mirror)(7)을 통해 웨이퍼 위를 조사(Scan Sweep)하게 된다.1 and 2 show the structure of the defective pattern wafer detection device, wherein the light emitted from the laser wavelength generator 1 is reflected by 180 ° through the spectrometer 2 and connected to the first lens 3 and again. The filter is filtered at a predetermined wavelength, reflected by the first mirror 5, and sent to the second lens 6. The wafer is scanned on a wafer through a second rotating mirror 7 that rotates the light passing through the second lens 6.
상기 과정중 제2거울(7)에 의해 반사된 빛의 강도를 자동 눈금측정장치(8)가 측정하게 되고 동시에 자동제로(Zero) 눈금측정을(9) 실시하는 장치가 사용된다.In the above process, the automatic scale measuring device 8 measures the intensity of the light reflected by the second mirror 7 and at the same time, an apparatus for performing the automatic zero scale measuring 9 is used.
제3도는 CRT(Cathode Ray Tube)상에 반사신호가 나타나는 원리도로서 돌아가는 거울에 의해 반사된 빛의 광원이 타원형 거울(10)의 갈라진 영역으로 통과되어 웨이퍼를 스캔닝(Scanning)하여 결함이나 이상 패턴 F1이 존재할 경우 F2에 반사되어 감지되고 결함이나 이상 패턴이 없을 경우 정상반사되어 타원형 거울(10)을 통해 S지점으로 모이게 된다.3 is a principle diagram in which a reflected signal appears on a CRT (Cathode Ray Tube). A light source of light reflected by a returning mirror passes through a cracked region of the elliptical mirror 10 to scan a wafer to detect defects or abnormalities. When the pattern F 1 is present, it is reflected and detected by the F 2 , and when there is no defect or an abnormal pattern, it is reflected back to the S point through the elliptical mirror 10.
상기 설명과 같이 웨이퍼 일정면적의 감광막의 위상차에 의한 반사된 빛에 의해 패턴 구조 알아보므로써, 제3도와 같이 감광막이 코팅된 상태의 불량패턴 웨이퍼, 제4도와 같은 다중현상 또는 이중노광에 의한 불량패턴 웨이퍼, 제5도와 같은 정상 패턴 웨이퍼를 식별할 수 있다.As described above, the pattern structure is determined by the reflected light due to the phase difference of the photoresist film having a predetermined area of the wafer. Thus, the defective pattern wafer is coated with the photoresist film as shown in FIG. The pattern wafer, the normal pattern wafer as shown in FIG. 5 can be identified.
제3a도, 제4a도, 제5a도는 반사신호를 나타낸다.3A, 4A, and 5A show a reflected signal.
제4도 및 제5도와 같이 불량 패턴 웨이퍼는 본 발명 장치의 CRT(Cathode Ray Tube)상으로 반사신호를 나타내므로서, 참고로 준비하여둔 정상 패턴 웨이퍼 반사신호와 비교하여 패턴 불량등을 식별할 수 있다.As shown in FIGS. 4 and 5, the defective pattern wafer exhibits a reflected signal on a cathode ray tube (CRT) of the apparatus of the present invention, and thus, pattern defects and the like can be identified by comparing with the normal pattern wafer reflected signal prepared for reference. Can be.
본 발명으로 인하여 반도체 제조공정시 발생하는 불량 패턴 웨이퍼를 포토 마스크(Photomask)작업후는 물론 식각후에도 신속 정확하게 간단히 식별함으로써 반도체 소자의 신뢰도 증대 및 수율향상의 효과를 가져올 수 있다.Due to the present invention, the defective pattern wafer generated during the semiconductor manufacturing process can be quickly and accurately identified after the photomask operation as well as after etching, thereby increasing the reliability and yield of the semiconductor device.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930003947A KR960011255B1 (en) | 1993-03-15 | 1993-03-15 | Wafer detecting apparatus for miss-pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930003947A KR960011255B1 (en) | 1993-03-15 | 1993-03-15 | Wafer detecting apparatus for miss-pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR940022768A KR940022768A (en) | 1994-10-21 |
| KR960011255B1 true KR960011255B1 (en) | 1996-08-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019930003947A KR960011255B1 (en) | 1993-03-15 | 1993-03-15 | Wafer detecting apparatus for miss-pattern |
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| Country | Link |
|---|---|
| KR (1) | KR960011255B1 (en) |
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1993
- 1993-03-15 KR KR1019930003947A patent/KR960011255B1/en not_active IP Right Cessation
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| Publication number | Publication date |
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| KR940022768A (en) | 1994-10-21 |
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