KR960010056Y1 - Current source circuit - Google Patents

Current source circuit Download PDF

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KR960010056Y1
KR960010056Y1 KR2019910002738U KR910002738U KR960010056Y1 KR 960010056 Y1 KR960010056 Y1 KR 960010056Y1 KR 2019910002738 U KR2019910002738 U KR 2019910002738U KR 910002738 U KR910002738 U KR 910002738U KR 960010056 Y1 KR960010056 Y1 KR 960010056Y1
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current source
transistor
current
circuit
base
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KR2019910002738U
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Korean (ko)
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KR920017085U (en
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송영원
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금성일렉트론 주식회사
문정환
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Priority to KR2019910002738U priority Critical patent/KR960010056Y1/en
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)

Abstract

내용 없음.No content.

Description

전류원회로Current source circuit

제1도는 종래의 전류원회로도.1 is a conventional current source circuit diagram.

제2도는 본 고안의 전류원회로도.2 is a current source circuit diagram of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

R11,R12: 저항 Q11,Q12: 엔피엔트랜지스터R 11 , R 12 : Resistance Q 11 , Q 12 : Enphitransistor

Iref : 기준전류원 Io : 출력전류원Iref: reference current source Io: output current source

본 고안은 전류미러형(current mirror) 전류원(current source)에 관한 것으로, 특히 공통에미터(Common Emitter 이하 CE) 엔피엔(NPN) 바이폴라 접합트랜지스터(Bipolar Junction Transistor 이하 BJT)의 단락전류이득(hfe)의 편차특성으로 인한 전류원의 변동오차를 줄이기 위한 전류원회로 설계에 적당하도록 한 전류원회로에 관한 것이다.The present invention relates to a current mirror current source, and in particular, a short-circuit current gain (hfe) of a common emitter (CE) or NPN bipolar junction transistor (BJT). The present invention relates to a current source circuit suitable for designing a current source circuit for reducing a variation error of a current source due to a deviation characteristic of a).

종래의 전류원회로는 제1도에 도시된 바와같이, 기준전류원(Iref)은 저항(R1)을 통해 에미터가 접지된 트랜지스터(Q1)의 콜렉터에 접속됨과 아울러 직접 상기 트랜지스터(Q1)의 베이스에 접속되고, 그 트랜지스터(Q1)의 콜렉터는 에미터가 접지된 트랜지스터(Q2)의 베이스에 접속되며, 상기 트랜지스터(Q2)의 콜렉터에 출력전류(I0)가 인가되어 구성된다.In the conventional current source circuit, as shown in FIG. 1, the reference current source Iref is directly connected to the collector of the transistor Q 1 with the emitter grounded through the resistor R 1 and directly to the transistor Q 1 . is connected to the base, the collector of the transistor (Q1) is connected to the base of an emitter grounded transistor (Q 2), the transistor output current (I 0) to the collector of the (Q 2) is applied is configured .

이와같이 구성된 종래의 회로는 기준전류원(Iref)이 저항(R1)을 통해 트랜지스터(Q1)의 콜렉터에 인가됨과 아울러 그 트랜지스터(Q1)의 베이스에 인가되고, 그 트랜지스터(Q1)의 콜렉터전류(IC1)일부는 트랜지스터(Q2)의 베이스에 인가되어 그 트랜지스터(Q2)의 콜렉터전류(IC2) 즉 출력전류(I0)가 흘러서, 상기 트랜지스터(Q1),(Q2)의 베이스 및 에미터간 전압차(VBE1),(VBE2)는 상기 저항(R1)에서의 전압강하로 나타나므로, 이를 식으로 표면하면 다음으 식(1)과 같이 표현된다.Thus the conventional circuit is configured, as soon reference current source (Iref) is applied to the collector of the transistor (Q 1) via a resistor (R 1) as well as being applied to the base of the transistor (Q 1), the collector of the transistor (Q 1) current (I C1) portion is applied to the base of the transistor (Q 2) collector current (I C2) of the transistor (Q 2) that is to flow the output current (I 0), the transistor (Q 1), (Q 2 Since the voltage difference (V BE1 ) and (V BE2 ) between the base and the emitter of) is represented by the voltage drop at the resistor R 1 , the surface is expressed by the following equation (1).

VBE1-VBE2=R1(IC1+IC2/hef2)-(1)V BE1 -V BE2 = R 1 (I C1 + I C2 / hef 2 )-(1)

상기 트랜지스터(Q1),(Q2)의 전류-전압 관계식에서In the current-voltage relationship of the transistors Q 1 and Q 2

VBE1=VTln(IC1/IS)-(2)V BE1 = V T ln (I C1 / I S )-(2)

VBE2=VTln(IC2/IS)-(3)을 상기 식(1)에 대입하고, 정리하면,Substituting V BE2 = V T ln (I C2 / I S )-(3) into Equation (1) above,

VT ln(IC1/IC2)=R1(IC1+IC2/hef2)-(4)가 된다.VT ln (I C1 / I C2 ) = R 1 (I C1 + I C2 / hef 2 )-(4).

따라서, 상기 식(4)을 IC2=I0에 대해 정리하면,Therefore, summarizing Equation (4) with respect to I C2 = I 0 ,

IC2=I0=IC1exp{-R1(IC1+IC2/hef2)/VT}-(5)I C2 = I 0 = I C1 exp {-R 1 (I C1 + I C2 / hef 2 ) / VT}-(5)

즉, IC1,IC2와 Iref의 관계식을 제1도의 회로에 대해 쓰면In other words, if I C1 , I C2 and Iref are written in the circuit of Fig.

Iref=Ic1+ Ic1/hef1+Ic2/hef2(6)Iref = Ic 1 + Ic1 / hef 1 + Ic 2 / hef 2 (6)

따라서, 상기 기준전류원(Iref)과 저항(R1)값에 의해 전류원의 출력전류(Io)가 일정하게 흐른다.Therefore, the output current Io of the current source flows constantly by the reference current source Iref and the resistance R 1 .

그러나, 이와같은 종래의 회로에서는 식(7)을 식(9)로서 근사하면 단락전류이득(hfe)은 없지만 실제 전류원의 관계식은 식(7)과 같이 그 단락 저류이득(hfe)에 많이 의존하고 있다.However, in this conventional circuit, if Equation (7) is approximated as Equation (9), there is no short-circuit current gain (hfe), but the relationship of the actual current source depends on the short-circuit retention gain (hfe) as in Equation (7). have.

즉, 상기 단락전류이득(hfe)값이 변동하면, 트랜지스터(Q1),(Q2)의 베이스 전류성분에 의한 전압강하가 저항(R1)에 나타나게 되므로 상기 식(7)과 같이 단락전류이득(hfe)에 의존하는 출력전류특성을 갖게 되는 문제점이 있다.That is, when the short-circuit current gain hfe fluctuates, the voltage drop caused by the base current components of the transistors Q 1 and Q 2 appears in the resistor R 1 , so that the short-circuit current is expressed by Equation (7). There is a problem in that the output current characteristic depends on the gain hfe.

본 고안은 이와같은 종래의 문제점을 해결하기 위하여, 종래 회로구성에서 기준전류원을 에미터 접지의 트랜지스터의 베이스에 직접접속하지 않고 저항을 통해 접속함으로써 단락전류이득(hfe)의 의존성을 감소시켜 전류원의 출력전류특성을 개선시킬 수 있는 전류원회로를 안출한 것으로, 이를 첨부한 도면에 의하여 상세히 설명하면 다음과 같다.In order to solve such a conventional problem, the present invention reduces the dependence of the short-circuit current gain (hfe) by connecting a reference current source through a resistor instead of directly connecting the reference current source to the base of the transistor of the emitter ground in the conventional circuit configuration. Invented a current source circuit that can improve the output current characteristics, described in detail by the accompanying drawings as follows.

제2도는 본 고안의 전류원회로도로서, 이에 도시한 바와같이 기준전류원(Iref)을 저항(R11)을 통해 에미터가 접지된 트랜지스터(Q12)의 콜렉터에 접속함과 아울러 그 접속점을 에미터가 접지된 트랜지스터(Q12)의 베이스에 접속하여, 그 트랜지스터(Q12)의 콜렉터에 출력전류(IO)가 흐르는 전류원회로에 있어서, 상기 기준전류원(Iref)의 출력측과 상기 트랜지스터(Q11)의 베이스간에 저항(R12)을 접속하여 구성한다.2 is a current source circuit diagram of the present invention. As shown in the drawing, the reference current source Iref is connected to the collector of the transistor Q 12 with the emitter grounded through the resistor R 11 , and the connection point is connected to the emitter. Is connected to the base of the grounded transistor Q 12 , and in the current source circuit in which the output current I O flows through the collector of the transistor Q 12 , the output side of the reference current source Iref and the transistor Q 11. Is constructed by connecting a resistor (R 12 ) between the bases.

이와같이 구성한 본 고안의 작용 및 효과를 설명하면 다음과 같다.Referring to the operation and effects of the present invention configured as described above are as follows.

기준전류원(Iref)이 저항(R11)을 통해 트랜지스터(Q11)의 콜렉터에 인가됨과 아울러 저항(R12)을 통해 그 트랜지스터(Q11)의 베이스에 인가되고, 상기 트랜지스터(Q11)의 콜렉터전류(IC11)일부는 트랜지스터(Q12)의 베이스에 인가되어 그 트랜지스터(Q12)의 콜렉터전류(IC12) 즉 출력전류(IO)가 흐르므로, 상기 트랜지스터(Q11),(Q12)의 베이스 및 에미터간 전압차(VBE11),(VBE12)를 구하면 다음과 같은 식(11)이 된다.Reference current source (Iref) as soon is applied to the collector of the transistor (Q 11) via a resistor (R 11) as well as being applied to the base of the transistor (Q 11) via a resistor (R 12), of the transistor (Q 11) Since the collector current (I C11) part is applied to the base of the transistor (Q 12) the transistor (Q 12) the collector current (I C12) that is the output current (I O) of the flow, wherein the transistor (Q 11), ( Obtaining a base and the emitter voltage difference (V BE11), (V BE12) in Q 12) is the following formula (11).

즉, IC11과 IC1의 차는 0.046%이므로 IC1=IC11로 사용된다.That is, since the difference between I C11 and I C1 is 0.046%, it is used as I C1 = I C11 .

이상에서 상세히 설명한 바와 같이 본 고안은 종래회로 구성에 저항 1개를 추가하여 종래회로에 비해식(19)와 같이 단락전류이득의 의존성 감소를 도모할 수 있게 된다. 따라서, 전류원의 변동오차를 줄여 출력 전류의 정확도(accuracy)를 높일 수 있게되는효과가 있다.As described in detail above, the present invention can reduce the dependency of the short-circuit current gain as in Equation (19) by adding one resistor to the conventional circuit configuration. Therefore, it is possible to increase the accuracy (accuracy) of the output current by reducing the variation error of the current source.

Claims (1)

(정정) 기준전류원(Iref)이 트랜지스터(Q11)의 베이스에 인가됨과 아울러 저항(R11)을 통해 그 트랜지스터(Q11)콜렉터에 인가되게 접속되고, 그 접속점이 트랜지스터(Q12)의 베이스에 접속되어, 그 트랜지스터(Q12)의 콜렉터에 출력전류(IO)가 흐르는 전류원회로에 있어서, 상기 기준전류원(Iref)의 출력측 및 상기 트랜지스터(Q11)의 베이스사이에 단락전류이득(hfe)의 의존도를 감소시키는 저항(R12)을 접속하여 구성된 것을 특징으로 하는 전류원회로.The (corrected) reference current source Iref is connected to the base of the transistor Q 11 and to be applied to the transistor Q 11 collector through a resistor R 11 , the connection point of which is connected to the base of the transistor Q 12 . is connected to the transistor (Q 12) output current (I O) to the collector according to the flowing current source circuit, the reference current source (Iref) output and short-circuit current gain (hfe between the base of said transistor (Q 11) of the And a resistor (R 12 ) for reducing the dependence of the current source.
KR2019910002738U 1991-02-27 1991-02-27 Current source circuit KR960010056Y1 (en)

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Application Number Priority Date Filing Date Title
KR2019910002738U KR960010056Y1 (en) 1991-02-27 1991-02-27 Current source circuit

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Application Number Priority Date Filing Date Title
KR2019910002738U KR960010056Y1 (en) 1991-02-27 1991-02-27 Current source circuit

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KR920017085U KR920017085U (en) 1992-09-17
KR960010056Y1 true KR960010056Y1 (en) 1996-11-21

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