KR960009950B1 - High voltage generator for semiconductor device - Google Patents

High voltage generator for semiconductor device Download PDF

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Publication number
KR960009950B1
KR960009950B1 KR1019930029796A KR930029796A KR960009950B1 KR 960009950 B1 KR960009950 B1 KR 960009950B1 KR 1019930029796 A KR1019930029796 A KR 1019930029796A KR 930029796 A KR930029796 A KR 930029796A KR 960009950 B1 KR960009950 B1 KR 960009950B1
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South Korea
Prior art keywords
high potential
output signal
semiconductor device
frequency
ring oscillator
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KR1019930029796A
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Korean (ko)
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KR950020723A (en
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한명석
김영희
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현대전자산업 주식회사
김주용
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Priority to KR1019930029796A priority Critical patent/KR960009950B1/en
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
    • H03K3/03—Astable circuits
    • H03K3/0315—Ring oscillators

Abstract

a ring oscillator(4) which outputs two oscillating frequencies with different phase according to the output signal of a high voltage level detector(1); a first and a second frequency dividers(5,8) for diving the output signal of the ring oscillator to the each constant period; the first and second drivers(6,9) where plural driving signals occur according to the each output signal of the first and the frequency divider; first and second high voltage pumps(7,10) which generate high voltage by driving according to the output signal of the first and the second driver(6,9).

Description

반도체 소자용 고전위 발생기High Potential Generator for Semiconductor Devices

제1도는 종래의 고전위 발생기의 블럭도.1 is a block diagram of a conventional high potential generator.

제2도는 본 발명에 따른 고전위 발생기의 블럭도.2 is a block diagram of a high potential generator according to the present invention.

제3도는 제2도의 동작 설명을 위한 파형도.3 is a waveform diagram for explaining the operation of FIG.

제4도는 제2도의 주파수 분배기의 상세 회로도.4 is a detailed circuit diagram of the frequency divider of FIG.

제5도는 제2도의 고전위 펌프의 상세 회로도.5 is a detailed circuit diagram of the high potential pump of FIG.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 고전위 레벨 감지기2 및 4 : 링 오실레이타1: high potential level detector 2 and 4: ring oscillator

3 : 고전위 펌프5 및 8 : 제1 및 제2주파수 분배기3: high potential pump 5 and 8: first and second frequency divider

6 및 9 : 제1 및 제2구동기7 및 10 : 제1 및 제2고전위 펌프6 and 9: first and second actuators 7 and 10: first and second high potential pumps

본 발명은 반도체 소자용 고전위(VPP) 발생기에 관한 것으로, 특히 고전위 레벨 감지기의 출력신호에 따라 위상이 서로 반전된 2개의 주파수를 생성한 다음, 이 2개의 주파수를 이용하여 2개의 고전위 펌프를 4위상 모드로 동작시키므로서 피크 전류(Peak Current)를 감소시킬 수 있는 반도체 소자용 고전위 발생기에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high potential (VPP) generator for semiconductor devices, and in particular, generates two frequencies whose phases are inverted from each other according to the output signal of the high potential level detector, and then uses the two frequencies The present invention relates to a high-potential generator for semiconductor devices capable of reducing peak current by operating a pump in four-phase mode.

종래의 고전위 발생기는 대기(Stand by)시와 액티브(active)시로 구분되어 동작되는데, 특히 액티브시 즉, 칩이 동작되었을 경우 제1도에 도시된 바와 같이 고전위 펌프(3)에서 발생되는 고전위(VPP) 레벨을 고전위 레벨 감지기(1)에서 감지하게 되는데, 예를들어 감지된 고전위 레벨이 낮을 경우 링 오실레이타(2)가 동작하여 고전위가 펌프(3)는 설정된 고전위 레벨까지 펌핑동작을 계속하게 된다. 이때 순간적인 전원전압에 대한 피크 전류가 계속 발생되어 파워 노이즈가 발생된다.The conventional high potential generator is divided into standby and active states, and is operated in the high potential pump 3 as shown in FIG. 1, particularly when the chip is operated. The high potential (VPP) level is detected by the high potential level detector (1). For example, when the detected high potential level is low, the ring oscillator (2) operates so that the high potential pump (3) The pumping operation is continued to the upper level. At this time, the peak current with respect to the instantaneous power supply voltage continues to generate power noise.

따라서 본 발명은 고전위 레벨 감지기의 출력신호에 따라 위상이 서로 반전된 2개의 주파수를 생성한 다음, 이 2개의 주파수를 이용하여 2개의 고전위 펌프를 4위상 모드로 동작시키므로서 피크 전류(Peak Current)를 감소시킬 수 있는 반도체 소자용 고전위 발생기를 제공하는데 그 목적이 있다.Therefore, the present invention generates two frequencies whose phases are inverted from each other according to the output signal of the high potential level detector, and then operates the two high potential pumps in four-phase mode by using the two frequencies. It is an object of the present invention to provide a high potential generator for a semiconductor device capable of reducing current.

상술한 목적을 달성하기 위한 본 발명은 고전위 레벨 감지기(1)의 출력신호에 따라 위상이 서로 다른 2개의 발진 주파수를 출력하는 링 오실레이타(4)와, 상기 링 오실레이타(4)의 각각의 출력신호를 각기 일정한 주기로 분배하기 위한 제1 및 제2주파수 분배기(5 및 8)와, 상기 제1 및 제2주파수 분배기(5 및 8)의 각각의 출력신호에 따라 다수의 구동신호가 각각 생성되는 제1 및 제2구동기(6 및 9)와, 상기 제1 및 제2구동기(6 및 9)의 각각의 출력신호에 따라 각기 동작하여 고전위를 발생시키는 제1 및 제2고전위 펌프(7 및 10)로 구성되는 것을 특징으로 한다.The present invention for achieving the above object is a ring oscillator (4) for outputting two oscillation frequencies of different phases in accordance with the output signal of the high potential level detector (1), and the ring oscillator (4) A plurality of driving signals in accordance with the respective output signals of the first and second frequency dividers 5 and 8 and the first and second frequency dividers 5 and 8 for respectively distributing respective output signals at regular intervals. First and second drivers 6 and 9 and respectively generated by the first and second drivers 6 and 9, respectively, to operate the first and second classics to generate a high potential. It is characterized by consisting of the upper pump (7 and 10).

이하, 첨부된 도면을 참조하여 본 발명을 상세히 설명하기로 한다.Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.

제2도는 본 발명에 따른 고전위 발생기의 블럭도로서 제3도를 참조하여 설명하면 다음과 같다.FIG. 2 is a block diagram of a high potential generator according to the present invention with reference to FIG.

고전위 레벨 감지기(1)에서 감지된 신호가 링 오실레이터(4)에 공급되면, 링 오실레이터(4)는 발진을 시작하여 위상이 서로 반전된 제1 및 제2발진주파수(제3도의 OS1 및 OS2)를 생성한다.When the signal sensed by the high potential level detector 1 is supplied to the ring oscillator 4, the ring oscillator 4 starts oscillation and the first and second oscillation frequencies in which phases are inverted from each other (OS1 and OS2 in FIG. 3). )

상기 제1발진 주파수(OS1)가 제1주파수 분배기(5)에 공급되면, 제1주파수 분배기(5)는 입력되는 주파수의 주기를 2배로 하여 제1주파수(제3도의 F1)를 생성하고, 이 제1주파수(F1)는 제1구동기(6)에 공급되는데, 제1구동기(5)에서는 위상이 서로 다른 4개의 신호를 생성하게 된다.When the first oscillation frequency OS1 is supplied to the first frequency divider 5, the first frequency divider 5 generates a first frequency (F1 in FIG. 3) by doubling the period of the input frequency. The first frequency F1 is supplied to the first driver 6, and the first driver 5 generates four signals having different phases.

한편, 상기 제2발진주파수(OS2)를 상기 제2주파수 분주기(8)에 공급되어 상술한 제1주파수 분배기(5)와 동일한 동작으로 제2주파수(제3도의 F2)를 생성하고, 이 제2주파수(F2)는 제2구동기(9)에 공급되어 서로 다른 위상을 갖는 4개의 신호를 생성한다.Meanwhile, the second oscillation frequency OS2 is supplied to the second frequency divider 8 to generate a second frequency (F2 in FIG. 3) in the same operation as the first frequency divider 5 described above. The second frequency F2 is supplied to the second driver 9 to generate four signals having different phases.

상기 제1 및 제2구동기(6 및 9)의 출력신호에 따라 제1 및 제2고전위 펌프(7 및 10)가 동작하여 고전위(VPP)가 생성되는데, 상기 제1 및 제2고전위 펌프(7 및 10) 각각은 4개의 위상 모드로 동작되므로 피크전류를 감소시킬 수 있다.According to the output signals of the first and second drivers 6 and 9, the first and second high potential pumps 7 and 10 are operated to generate a high potential VPP. The first and second high potentials are generated. Each of the pumps 7 and 10 is operated in four phase modes, thereby reducing the peak current.

제4도는 제2도의 제1주파수 분배기(또는 제2주파수 분배기)의 상세회로도로서, 예를 들어 링 오실레이터(4)의 F1의 전상태가 LOW 상태이고, 제1발진 주파수(OS1)가 HIGH인 구간에서 반전 게이트(G1)의 LOW 출력신호 및 반전게이트(G2)의 HIGH 출력신호에 의해 트랜지스터(Q7) 및 (Q8)이 턴온되어 반전게이트(G6), 트래지스터(Q7 및 Q8) 및 반전게이트(G4)에 의해 귀환 회로가 이루어져 반전게이트(G5)에서는 제1발진주파수(OS1)의 주기보다 2배 증가된 LOW 신호가 출력된다. 또한 제1발진주파수(OS1)가 LOW인 구간에서는 트랜지스터(Q3, Q4, Q5 및 Q6)가 턴온되어 반전게이트(G7), 트랜지스터(Q3 및 Q4) 및 반전게이트(G3)에 의해 귀환 회로가 형성되어 상기 반전게이트(G5)의 출력단에서는 제1발진주파수(OS1)의 주기보다 2배 증가된 HIGH 신호가 출력된다.FIG. 4 is a detailed circuit diagram of the first frequency divider (or second frequency divider) of FIG. 2, for example, where the entire state of F1 of the ring oscillator 4 is LOW and the first oscillation frequency OS1 is HIGH. In the section, the transistors Q7 and Q8 are turned on by the LOW output signal of the inverting gate G1 and the HIGH output signal of the inverting gate G2 to turn on the inverting gates G6, the transistors Q7 and Q8 and the inverting gate. A feedback circuit is formed by G4, and the inverting gate G5 outputs a LOW signal that is increased by twice the period of the first oscillation frequency OS1. In the period where the first oscillation frequency OS1 is LOW, the transistors Q3, Q4, Q5 and Q6 are turned on to form a feedback circuit by the inversion gates G7, the transistors Q3 and Q4, and the inversion gate G3. As a result, the HIGH signal, which is increased by twice the period of the first oscillation frequency OS1, is output from the output terminal of the inverting gate G5.

제5도는 제2도의 제1고전위 펌프(또는 제2고전위 펌프)에 대한 상세 회로도로서, 상기 제1(또는 제2구동기)(6 또는 9)의 출력신호를 I1, I2, I3 및 I4라고 할 때, I2가 High 상태에서 노드(N1)을 Vcc로 차지시키고, I1이 High 상태가 되었을 때 노드(N1)가 Vcc에서 2Vcc로 붙스트랩(Boostrap)되어 노드(N1)을 게이트로 하는 트랜지스터(Q1)는 턴온되고, 이때 노드(N2)는 Vcc가 되어 노드(Vpp)에서는 고전위가 발생된다.FIG. 5 is a detailed circuit diagram of the first high potential pump (or second high potential pump) of FIG. 2, and outputs the output signals of the first (or second driver) 6 or 9 to I1, I2, I3 and I4. In this case, when I2 is in a high state, the node N1 occupies Vcc, and when I1 is in a high state, the node N1 is trapped from Vcc to 2Vcc so that the transistor is gated to the node N1. Q1 is turned on, and at this time, node N2 becomes Vcc and high potential is generated at node Vpp.

상술한 바와 같이 본 발명에 의하면 고전위 레벨 감지기의 출력신호에 따라 위상이 서로 반전된 2개의 주파수를 생성한 다음, 이 2개의 주파수를 이용하여 2개의 고전위 펌프를 4위상 모드로 동작시키므로서 피크 전류(Peak Current)를 감소시킬 수 있는 탁월한 효과가 있다.As described above, according to the present invention, two frequencies in which phases are inverted according to the output signal of the high potential level detector are generated, and then the two high potential pumps are operated in the four phase mode by using the two frequencies. There is an excellent effect to reduce the peak current (Peak Current).

Claims (4)

반도체 소자용 고전위 발생기에 있어서, 고전위 레벨 감지기(1)의 출력신호에 따라 위상이 서로 다른 2개의 발진 주파수를 출력하는 링 오실레이타(4)와, 상기 링 오실레이타(4)의 각각의 출력신호를 각기 일정한 주기로 분배하기 위한 제1 및 제2주파수 분배기(5 및 8)와, 상기 제1 및 제2주파수 분배기(5 및 8)의 각각의 출력신호에 따라 다수의 구동신호가 각기 생성되는 제1 및 제2구동기(6 및 9)와, 상기 제1 및 제2구동기(6 및 9)의 각각의 출력신호에 따라 각기 동작하여 고전위를 발생시키는 제1 및 제2고전위 펌프(7 및 10)로 구성되는 것을 특징으로 하는 반도체 소자용 고전위 펌프.In a high potential generator for a semiconductor device, a ring oscillator (4) for outputting two oscillating frequencies having different phases in accordance with an output signal of a high potential level detector (1), and the ring oscillator (4) According to the respective output signals of the first and second frequency dividers 5 and 8 and the first and second frequency dividers 5 and 8 for distributing respective output signals at regular intervals, First and second high potentials that generate high potential by operating according to respective output signals of the first and second drivers 6 and 9 and the first and second drivers 6 and 9, respectively. A high potential pump for semiconductor elements, characterized in that it consists of pumps (7 and 10). 제1항에 있어서, 상기 제1 및 제2주파수 분배기 각각은 입력되는 제1 및 제2발진 주파수의 주기보다 2배 증가되도록 구성되는 것을 특징으로 하는 반도체 소자의 고전위 펌프.The high potential pump of a semiconductor device according to claim 1, wherein each of the first and second frequency dividers is configured to increase by two times the period of an input first and second oscillation frequency. 제1항에 있어서, 상기 제1 및 제2구동기 각각은 상기 제1 및 제2주파수 분배기의 출력신호를 입력으로 하여 위상이 서로 다른 4개의 구동신호를 발생시키도록 구성되는 것을 특징으로 하는 반도체 소자용 고전위 펌프.The semiconductor device according to claim 1, wherein each of the first and second drivers is configured to generate four driving signals having different phases by using output signals of the first and second frequency dividers as inputs. For high potential pumps. 제1항에 있어서, 상기 제1 및 제2고전위 펌프(7 및 10) 각각은 4개의 위상 모드로 동작되도록 구성되는 것을 특징으로 하는 반도체 소자용 고전위 펌프.2. The high potential pump for semiconductor devices according to claim 1, wherein each of the first and second high potential pumps (7 and 10) is configured to operate in four phase modes.
KR1019930029796A 1993-12-27 1993-12-27 High voltage generator for semiconductor device KR960009950B1 (en)

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