KR960006064A - Manufacturing method of CCD image device - Google Patents

Manufacturing method of CCD image device Download PDF

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Publication number
KR960006064A
KR960006064A KR1019940016182A KR19940016182A KR960006064A KR 960006064 A KR960006064 A KR 960006064A KR 1019940016182 A KR1019940016182 A KR 1019940016182A KR 19940016182 A KR19940016182 A KR 19940016182A KR 960006064 A KR960006064 A KR 960006064A
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South Korea
Prior art keywords
forming
region
insulating film
type
type well
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KR1019940016182A
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Korean (ko)
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KR0136924B1 (en
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박찬
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문정환
금성일렉트론 주식회사
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Priority to KR1019940016182A priority Critical patent/KR0136924B1/en
Publication of KR960006064A publication Critical patent/KR960006064A/en
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Publication of KR0136924B1 publication Critical patent/KR0136924B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808—Input structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

본 발명은 CCD(Charge Coupled Device) 영상소자에 관한 것으로, 특히 수광영역의 확장으로 소자의 감도(Sensitivity)를 향상시키는데 적당하도록 한 CCD 영상소자의 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to CCD (Charge Coupled Device) imaging devices, and more particularly to a method of manufacturing a CCD imaging device suitable for improving the sensitivity of devices by the expansion of the light receiving area.

상기와 같은 본 발명의 CCD 영상소자의 제조방법은 n형 반도체 기판에 p형 웰을 형성하는 공정과, 상기 p형 웰이 형성된 기판의 전면에 게이트 절연막을 형성하는 공정과, 상기 p형 웰 영역내에 n형 불순물 이온주입하여 일정 간격으로 복수개의 수직전하전송영역(VCCD)을 형성하는 공정과, 상기 수직전하전송영역(VCCD)이 형성된 p형 웰 영역내에 고농도 p형 불순물 이온주입하여 복수개의 채널스톱층을 형성하는 공정과 상기의 수직전하전송영역(VCCD) 상측의 게이트 절연막상에 복수개의 폴리게이트를 형성하는 공정과, 전면에 절연막을 형성하고 폴리게이트 상측에만 남도록 절연막을 패터닝한 후 수광영역을 제외한 부분에 금속차광층을 형성하는 공정과, 상기의 금속차광층을 마스크로 하여 n형 불순물을 서로 반대방향으로 제1,2틸트(Tilt) 이온주입하여 PDN영역을 형성하는 공정과, 상기의 PDN영역 상측에 고농도의 p형 불순물 이온주입하여 PDP영역을 형성하는 공정을 포함하여 이루어짐을 특징으로 한다.As described above, a method of manufacturing a CCD image device according to the present invention includes forming a p-type well on an n-type semiconductor substrate, forming a gate insulating film on an entire surface of the substrate on which the p-type well is formed, and the p-type well region. Forming a plurality of vertical charge transfer regions (VCCDs) at regular intervals by implanting n-type impurity ions into the plurality of channels by implanting a high concentration of p-type impurity ions into the p-type well regions in which the vertical charge transfer regions (VCCDs) are formed; Forming a stop layer and forming a plurality of polygates on the gate insulating film above the vertical charge transfer region (VCCD); forming an insulating film on the front surface and patterning the insulating film so that only the polygate remains on the light receiving region. Forming a metal light shielding layer on the portions excluding the PD, and first and second tilt ion implantation of n-type impurities in opposite directions using the metal light shielding layer as a mask to And forming a PDP region by implanting a high concentration of p-type impurity ions onto the PDN region.

Description

씨씨디(CCD) 영상소자의 제조방법Manufacturing method of CCD image device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 (a) 내지 (c)는 본 발명의 CCD 영상소자의 공정 단면도.2A to 2C are cross-sectional views of a CCD imaging device of the present invention.

Claims (3)

n형 반도체 기판에 p형 웰을 형성하는 공정과, 상기 p형 웰이 형성된 기판의 전면에 게이트 절연막을 형성하는 공정과, 상기 p형 웰 영역내에 n형 불순물 이온주입하여 일정 간격으로 복수개의 수직전하전송영역(VCCD)을 형성하는 공정과, 상기 수직전하전송영역(VCCD)이 형성된 p형 웰 영역내에 고농도 p형 불순물 이온주입하여 복수개의 채널스톱층을 형성하는 공정과, 상기의 수직전하전송영역(VCCD) 상측의 게이트 절연막상에 복수개의 폴리게이트를 형성하는 공정과, 전면에 절연막을 형성하고 폴리게이트 상측에만 남도록 절연막을 패터닝한 후 수광영역을 제외한 부분에 금속차광층을 형성하는 공정과 상기의 금속차광층을 마스크로 하여 n형 불순물을 서로 반대방향으로 제1,2틸트(Tilt) 이온주입하여 PDN영역을 형성하는 공정과 상기의 PDN영역 상측에 고농도의 p형 불순물을 이온주입하여 PDP영역을 형성하는 공정을 포함하여 이루어짐을 특징으로 하는 CCD 영상소자의 제조방법.forming a p-type well on an n-type semiconductor substrate, forming a gate insulating film on the entire surface of the substrate on which the p-type well is formed, and implanting n-type impurity ions into the p-type well region at a plurality of vertical Forming a charge transfer region (VCCD), implanting a high concentration of p-type impurity ions into a p-type well region in which the vertical charge transfer region (VCCD) is formed, and forming a plurality of channel stop layers; Forming a plurality of polygates on the gate insulating film above the region VCCD, forming an insulating film on the entire surface, patterning the insulating film so that it remains only above the polygate, and then forming a metal light shielding layer in a portion other than the light receiving region; Forming a PDN region by implanting n-type impurities into first and second tilt ions in opposite directions using the metal light shielding layer as a mask, and forming a PDN region above the PDN region. And forming a PDP region by ion implantation of p-type impurities of a concentration. 제1항 있어서, 제1,2틸트(Tilt) 이온주입공정은 30∼60°의 각도로 이온주입함을 특징으로 하는 CCD 영상소자의 제조방법.The method of claim 1, wherein the first and second tilt ion implantation steps include ion implantation at an angle of 30 to 60 °. 제1항에 있어서, 게이트 절연막은 ONO(Oxide-Nitride-Oxide)층으로 이루어지는 것을 특징으로 하는 CCD 영상소자의 제조방법.2. The method of claim 1, wherein the gate insulating film is formed of an oxide-nitride-oxide (ONO) layer. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940016182A 1994-07-06 1994-07-06 Fabricating method of ccd image sensor KR0136924B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940016182A KR0136924B1 (en) 1994-07-06 1994-07-06 Fabricating method of ccd image sensor

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Application Number Priority Date Filing Date Title
KR1019940016182A KR0136924B1 (en) 1994-07-06 1994-07-06 Fabricating method of ccd image sensor

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KR960006064A true KR960006064A (en) 1996-02-23
KR0136924B1 KR0136924B1 (en) 1998-04-24

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100390836B1 (en) * 2000-12-30 2003-07-10 주식회사 하이닉스반도체 Image sensor capable of improving capacitance of photodiode and charge transport and method for forming the same
KR100494132B1 (en) * 2000-12-30 2005-06-13 매그나칩 반도체 유한회사 Unit pixel of image sensor

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6100556A (en) * 1997-11-14 2000-08-08 Motorola Inc. Method of forming a semiconductor image sensor and structure
US6023081A (en) * 1997-11-14 2000-02-08 Motorola, Inc. Semiconductor image sensor
JP2001308304A (en) * 2000-04-19 2001-11-02 Sony Corp Manufacturing method of solid-state image pickup element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100390836B1 (en) * 2000-12-30 2003-07-10 주식회사 하이닉스반도체 Image sensor capable of improving capacitance of photodiode and charge transport and method for forming the same
KR100494132B1 (en) * 2000-12-30 2005-06-13 매그나칩 반도체 유한회사 Unit pixel of image sensor

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