KR960006035A - DRAM device - Google Patents

DRAM device Download PDF

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Publication number
KR960006035A
KR960006035A KR1019940018517A KR19940018517A KR960006035A KR 960006035 A KR960006035 A KR 960006035A KR 1019940018517 A KR1019940018517 A KR 1019940018517A KR 19940018517 A KR19940018517 A KR 19940018517A KR 960006035 A KR960006035 A KR 960006035A
Authority
KR
South Korea
Prior art keywords
cell
redundancy
normal
present
cells
Prior art date
Application number
KR1019940018517A
Other languages
Korean (ko)
Inventor
전준현
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019940018517A priority Critical patent/KR960006035A/en
Publication of KR960006035A publication Critical patent/KR960006035A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique

Abstract

본 발명은 디램소자에 관한 것으로, 종래 디램소자는 메모리어레이의 외곽에 우치하는 리던던시 셀의 불량가능성이 노멀 셀에 비해 크며, 센스 앰프 및 메인앰프로 부터 멀리 떨어져 있는 리던던시 셀의 로딩(Loading)이 노멀 셀들 보다 크기 때문에 셀 특성이 노멀 셀보다 나빠질 수 있으며, 또한 리던던시 셀이 불량일 경우 리페어(Repair)후에도 불량 칩이 될 가능성이 있게 되는 단점이 있었다.The present invention relates to a DRAM device, and a conventional DRAM device has a greater probability of failure of a redundancy cell located at the outer edge of a memory array than a normal cell, and has a loading of a redundancy cell remote from a sense amplifier and a main amplifier. Since the cell characteristics are worse than the normal cells because they are larger than the normal cells, and if the redundancy cells are defective, there is a possibility that the chips become defective even after repair.

본 발명은 이러한 문제점을 해결하기 위항여 본 발명은 메모리어레이의 외곽에 로우(ROW)방향으로 형성되는 리던던시 셀을 노멀 셀보다 너비방향으로 크게 형성하고 컬럼(COLUMN)방향으로 형성된느 리던던시 셀은 노멀 셀보다 길이방향으로 크게 형성하여 리던던시 셀이 안정적으로 동작하도록 하는 것을 목적으로 한다.The present invention is to solve this problem, the present invention is to form a redundancy cell formed in the row (ROW) direction on the outside of the memory array in the width direction larger than the normal cell and the redundancy cells formed in the column (COLUMN) direction is normal An object of the present invention is to make the redundancy cell operate stably by forming it larger in the longitudinal direction than the cell.

Description

디램소자DRAM device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명에디램소자의 구조도.2 is a structural diagram of the present invention.

제3도는 본 발명에 따른 리던던시 셀의 센싱시간 특성도.3 is a sensing time characteristic diagram of a redundancy cell according to the present invention.

Claims (1)

메모리어레이부의 외곽에 로우(ROW) 및 컬럼(COLUMN)방향으로 리던던시 셀이 형성되는 디램소자에 있어서, 상기 로우방향의 리던던시 셀은 노멀셀보다 너비방향으로 크게 형성하고, 컬럼(COLUMN)방향의 리던던시 셀은 노멀 세로다 길이방향으로 크게 형성한 것을 특징으로 하는 디램소자.In a DRAM device in which redundancy cells are formed in a row and a column direction in an outer portion of a memory array, the row redundancy cells are formed wider in a width direction than a normal cell and redundancy in a column direction. A cell is a DRAM device characterized in that formed in the longitudinal longitudinal direction of the cell. ※참고사항:최초출원 내용에 의하여 공개되는 것임.※ Note: The information is disclosed by the first application.
KR1019940018517A 1994-07-28 1994-07-28 DRAM device KR960006035A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940018517A KR960006035A (en) 1994-07-28 1994-07-28 DRAM device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940018517A KR960006035A (en) 1994-07-28 1994-07-28 DRAM device

Publications (1)

Publication Number Publication Date
KR960006035A true KR960006035A (en) 1996-02-23

Family

ID=66697968

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940018517A KR960006035A (en) 1994-07-28 1994-07-28 DRAM device

Country Status (1)

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KR (1) KR960006035A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8599041B2 (en) 2008-12-09 2013-12-03 Electronics And Telecommunications Research Institute Apparatus and method for controlling traffic light

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8599041B2 (en) 2008-12-09 2013-12-03 Electronics And Telecommunications Research Institute Apparatus and method for controlling traffic light

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