KR960005881A - Bipolar Transistor Manufacturing Method - Google Patents
Bipolar Transistor Manufacturing Method Download PDFInfo
- Publication number
- KR960005881A KR960005881A KR1019940017032A KR19940017032A KR960005881A KR 960005881 A KR960005881 A KR 960005881A KR 1019940017032 A KR1019940017032 A KR 1019940017032A KR 19940017032 A KR19940017032 A KR 19940017032A KR 960005881 A KR960005881 A KR 960005881A
- Authority
- KR
- South Korea
- Prior art keywords
- region
- base
- emitter
- bipolar transistor
- forming
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract 7
- 150000002500 ions Chemical class 0.000 claims abstract 5
- 150000004767 nitrides Chemical class 0.000 claims abstract 4
- 230000003647 oxidation Effects 0.000 claims abstract 4
- 238000007254 oxidation reaction Methods 0.000 claims abstract 4
- 230000000873 masking effect Effects 0.000 claims abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract 3
- 229920005591 polysilicon Polymers 0.000 claims abstract 3
- 239000004065 semiconductor Substances 0.000 claims abstract 2
- 239000000758 substrate Substances 0.000 claims abstract 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000000137 annealing Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Abstract
본 발명은 집적도를 개선하며, MOS소자와의 혼용에 효과적인 바이폴라 트랜지스터의 제조방법에 관한 것이다.The present invention relates to a method of manufacturing a bipolar transistor that improves the degree of integration and is effective for mixing with MOS devices.
본 발명은 바이폴라 트랜지스터의 제조방법에 있어서, 가) 반도체기판의 소정의 부위를 선택적산화공정으로로 형성한 필드산화막으로 활성영역을 정의하는 단계와, 나) 바이폴라 트랜지스터를 형성할 활성영역을 제외한 부분을 제1폴리실리콘 필림으로 마스킹하고 이온주입 한 뒤, 확산하여 콜렉터영역을 형성하는 단계와, 다) 제2질화막으로 에미터영역이 될 부분을 마스킹하고, 산화공정을 실시하여 콜렉터영역 상에 국부적으로 베이스산화막을 성장시킨 후, 제2질화막을 제거하는 단계와, 라) 포토레지스트를 사용하여 베이스영역을 오픈하는 패턴을 만들고 이온을 주입하여 베이스영역을 형성하고, 포토레지스트 패턴을 제거하여, 콜렉터-베이스졍션을 형성하는 단계와, 마) 포토레지스트로 에미터영역을 정의하고, 에미터영역 형성부위에만 이온주입하고 어닐링하여 에미터-베이스졍션과 에미터 영역을 형성하는 단계로 구성한다.According to the present invention, a method of manufacturing a bipolar transistor includes: (a) defining an active region with a field oxide film in which a predetermined portion of a semiconductor substrate is formed by a selective oxidation process; and b) a portion excluding an active region in which a bipolar transistor is to be formed. Is masked with a first polysilicon film and ion implanted, followed by diffusion to form a collector region, c) masking a portion to be an emitter region with a second nitride film, and subjecting it to an oxidation process locally on the collector region. After growing the base oxide film with a second step, removing the second nitride film; d) forming a pattern for opening the base region using photoresist, implanting ions to form a base region, and removing the photoresist pattern, Forming a base cushion; e) defining an emitter region with a photoresist; By mouth, and annealing the emitter-is composed of a base to form a junction with the emitter region.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제2도는 본 발명의 방법에 의한 바이폴라 트랜지스터의 제조공정도이다.2 is a manufacturing process diagram of a bipolar transistor according to the method of the present invention.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940017032A KR0135044B1 (en) | 1994-07-15 | 1994-07-15 | Fabrication method of bjt |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940017032A KR0135044B1 (en) | 1994-07-15 | 1994-07-15 | Fabrication method of bjt |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960005881A true KR960005881A (en) | 1996-02-23 |
| KR0135044B1 KR0135044B1 (en) | 1998-04-20 |
Family
ID=19388033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019940017032A KR0135044B1 (en) | 1994-07-15 | 1994-07-15 | Fabrication method of bjt |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0135044B1 (en) |
-
1994
- 1994-07-15 KR KR1019940017032A patent/KR0135044B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR0135044B1 (en) | 1998-04-20 |
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| LAPS | Lapse due to unpaid annual fee |