KR960003761B1 - Anti-reflect-film forming method of tungsten silicide film - Google Patents
Anti-reflect-film forming method of tungsten silicide film Download PDFInfo
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- KR960003761B1 KR960003761B1 KR1019920026707A KR920026707A KR960003761B1 KR 960003761 B1 KR960003761 B1 KR 960003761B1 KR 1019920026707 A KR1019920026707 A KR 1019920026707A KR 920026707 A KR920026707 A KR 920026707A KR 960003761 B1 KR960003761 B1 KR 960003761B1
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Abstract
Description
제 1 도 내지 제 3 도는 본 발명에 의해 인-시투 공정으로 텅스텐 실리사이드 반사방지층 제조단계를 도시한 단면도.1 to 3 are cross-sectional views showing a tungsten silicide antireflective layer manufacturing step in an in-situ process according to the present invention.
제 1 도는 절연막 상부에 다결정 실리콘층을 형성시킨 상태의 단면도.1 is a cross-sectional view of a state in which a polycrystalline silicon layer is formed on an insulating film.
제 2 도는 텅스텐 실리사이드층을 형성시킨 상태의 단면도.2 is a cross-sectional view of a state in which a tungsten silicide layer is formed.
제 3 도는 텅스텐 실리사이드층 상부에 전면성 텅스텐층을 예정된 두께로 형성시킨 상태의 단면도.3 is a cross-sectional view of a state in which a full-tungsten tungsten layer is formed to a predetermined thickness on a tungsten silicide layer.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 절연막 2 : 다결정 실리콘층1 insulating film 2 polysilicon layer
3 : 텅스텐 실리사이드층 4 : 전면성 텅스텐층3: tungsten silicide layer 4: full-tungsten layer
본 발명은 고집적 기억소자의 신호전달용 금속배선으로 사용되는 텅스텐 실리사이드층의 반사방지층 제조방법에 관한 것으로, 특히, 텅스텐 실리사이드층을 증착한 다음, 인-시투(In situ)공정으로 반사방지층으로 사용되는 전면성 텅스텐층(Blanket tungsten layer)를 제조하는 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an antireflection layer of a tungsten silicide layer used as a metal wiring for signal transmission of a highly integrated memory device. The present invention relates to a method for producing a blanket tungsten layer.
일반적으로 텅스텐 실리사이드층의 반사방지층은 텅스텐 실리사이드층 증착 후 플라즈마 상태에서의 화학기상 증착법으로 실리콘 나이트라이드(SiN)를 형성하여 사용한다.In general, the anti-reflection layer of the tungsten silicide layer is used to form silicon nitride (SiN) by chemical vapor deposition in a plasma state after deposition of the tungsten silicide layer.
그러나, 실리콘 나이트라이드층을 형성하는 경우 텅스텐 실리사이드층과는 접합력이 떨어지고 후속공정으로 인하여 나이트라이드층이 벗겨지는 현상이 유발되어 신뢰성이 떨어지며, 텅스텐 실리사이드층 배선패턴을 형성한 후 전면성 식각방법으로 실리콘 나이트라이드층을 벗겨내는 공정이 추가되는 단점을 가지고 있다.However, in the case of forming the silicon nitride layer, the bonding strength with the tungsten silicide layer is inferior and the delamination of the nitride layer is caused by a subsequent process, thereby decreasing reliability. After forming the tungsten silicide layer wiring pattern, the surface etching method is performed. The disadvantage is that the process of stripping off the silicon nitride layer is added.
따라서, 본 발명은 상기 문제점을 해결하기 위하여 반응물은 WF6와 SiH4을 사용하는 한 반응기에서 두 반응물의 도입유량비(SiH4/WF6) 100 이상인 상태에서 예정된 두께만큼 텅스텐 실리사이드를 화학적 기상 증착법으로 형성한 후 바로 두 반응물의 도입유량부(SiH4/WF6)를 1 이하로 조절하여 텅스텐 실리사이드 표면에 전면성 텅스텐을 예정된 두께만큼 증착하여 텅스텐 실리사이드의 반사방지층을 형성하는 방법을 제공하는데 그 목적이 있다.Therefore, in order to solve the problem, the present invention uses chemical vapor deposition of tungsten silicide by a predetermined thickness in a state in which a reactant is WF 6 and SiH 4 in a reactor having a flow rate ratio (SiH 4 / WF 6 ) of 100 or more. The present invention provides a method of forming an antireflection layer of tungsten silicide by depositing a total thickness of tungsten silicide on a surface of tungsten silicide by controlling the introduction flow rate (SiH 4 / WF 6 ) of the two reactants to 1 or less immediately after formation. There is this.
본 발명에 의하면, 텅스텐 실리사이드를 반사방지층을 형성함에 있어서 반응물로 텅스텐 헥사 플루인라이드(WF6)와 사일렌(SiH4)을 사용하는 화학적기상증착 반응기에서 두반응물의 도입유량비(SiH4/WF6)가 100 이상인 상태로 예정된 두께만큼 텅스텐 실리사이드를 형성하는 단계와, 같은 반응기에서 두반응물의 도입유량비를 1 이하로 조절하여 전면성 텅스텐을 예정된 두께만큼 적층하는 단계를 포함하는 것을 특징으로 한다.According to the present invention, the flow rate ratio of the two reactants (SiH 4 / WF) in a chemical vapor deposition reactor using tungsten hexa fluoride (WF 6 ) and xylene (SiH 4 ) as reactants in forming the anti-reflection layer of tungsten silicide. 6 ) forming tungsten silicide by a predetermined thickness in a state of 100 or more, and controlling the introduction flow rate ratio of the two reactants in the same reactor to 1 or less, and stacking full-tungsten tungsten by a predetermined thickness.
이하, 본 발명을 첨부된 도면을 참조하여 설명하면 다음과 같다.Hereinafter, the present invention will be described with reference to the accompanying drawings.
제 1 도는 절연막(1) 예를들어 산화막 또는 절연막 상부에 예정된 두께의 다결정 실리콘층(2)을 증착시킨 단면도이다.1 is a cross-sectional view of depositing a polycrystalline silicon layer 2 of predetermined thickness on an insulating film 1, for example, an oxide film or an insulating film.
제 2 도는 제 1 도 공정후 다결정 실리콘층(2) 상부에 텅스텐 헥사 플루오라이드(WF6)와 사일렌(SiH4)의 반응물을 도입할 수 있는 화학적 기상증착 반응기에서 두 반응물의 도입유량비(SiH4/WF6)를 100 이상으로 하여 예정된 두께의 텅스텐 실리사이드층(3)을 증착시킨 단면도이다.2 is a flow rate ratio (SiH) of two reactants in a chemical vapor deposition reactor capable of introducing a reactant of tungsten hexafluoride (WF 6 ) and xylene (SiH 4 ) onto the polycrystalline silicon layer 2 after the process of FIG. 1. 4 / WF 6 ) is a cross-sectional view in which a tungsten silicide layer 3 having a predetermined thickness is deposited with 100 or more.
제 3 도는 같은 반응기에서 바로 두 반응물이 도입유량비(SiH4/WF6)를 1 이하로 하여 텅스텐 실리사이드층(3) 상부에 반사방지층으로 전면성 텅스텐층(4)을 예정된 두께로 증착시킨 단면도이다.3 is a cross-sectional view in which two reactants are deposited in a predetermined thickness with the anti-reflective layer on the tungsten silicide layer 3 with the introduction flow rate (SiH 4 / WF 6 ) of 1 or less in the same reactor. .
상기한 본 발명에 의한 텅스텐 실리사이드층의 반사방지층으로 전면성 텅스텐층을 형성하게 되면, 텅스텐 실리사이드층의 높은 반사율(reflectivity)을 낮추며, 텅스텐 실리사이드층과의 접합력을 증가시켜 소자의 신뢰성을 향상시킬 수 있다. 또한 반사방지층으로 형성된 전면성 텅스텐을 별도의 공정으로 벗겨낼 필요가 없으므로 공정의 효율을 증대시킨다.When the front tungsten layer is formed as the anti-reflection layer of the tungsten silicide layer according to the present invention, it is possible to lower the high reflectivity of the tungsten silicide layer and increase the bonding strength with the tungsten silicide layer to improve the reliability of the device. have. In addition, the entire surface of the tungsten formed as an antireflection layer does not need to be peeled off in a separate process, thereby increasing the efficiency of the process.
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KR1019920026707A KR960003761B1 (en) | 1992-12-30 | 1992-12-30 | Anti-reflect-film forming method of tungsten silicide film |
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KR1019920026707A KR960003761B1 (en) | 1992-12-30 | 1992-12-30 | Anti-reflect-film forming method of tungsten silicide film |
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KR960003761B1 true KR960003761B1 (en) | 1996-03-22 |
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KR100255518B1 (en) * | 1996-12-30 | 2000-05-01 | 김영환 | Method of fabricating tungsten polycide of semiconductor device |
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