KR960002635A - Method of forming interlayer dielectric film of semiconductor device - Google Patents

Method of forming interlayer dielectric film of semiconductor device Download PDF

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Publication number
KR960002635A
KR960002635A KR1019940012901A KR19940012901A KR960002635A KR 960002635 A KR960002635 A KR 960002635A KR 1019940012901 A KR1019940012901 A KR 1019940012901A KR 19940012901 A KR19940012901 A KR 19940012901A KR 960002635 A KR960002635 A KR 960002635A
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KR
South Korea
Prior art keywords
film
forming
semiconductor device
insulating film
metal
Prior art date
Application number
KR1019940012901A
Other languages
Korean (ko)
Inventor
전영호
장현진
문영화
고재완
구영모
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940012901A priority Critical patent/KR960002635A/en
Publication of KR960002635A publication Critical patent/KR960002635A/en

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

본 발명은 반도체 소자의 금속층간절연막 형성방법에 관한 것으로, 금속막(1) 상부에 절연막(2) 형성후 SOG막 코팅, 경화 등의 공정을 수반하는 금속막과 금속막 사이에 형성되는 상기 절연막(2) 상부에 SOG막을 비롯한 외부 분위기로 부터 습기, 수소이온 등 불순물의 침투를 방지하는 RTP방식에 의한 보호막(3)을 형성함으로써 후속공정중 발생할 수 있는 각종 불순물의 침투로 부터 금속막을 비롯한 하부층을 보호할 수 있어 반도체 소자의 제조수율 및 신뢰성 증대 효과를 얻을 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a metal interlayer insulating film of a semiconductor device, wherein the insulating film is formed between a metal film and a metal film following a process such as SOG film coating and curing after forming the insulating film 2 on the metal film 1. (2) Forming a protective film (3) by RTP method that prevents penetration of impurities such as moisture and hydrogen ions from the external atmosphere including SOG film on the upper layer and lower layer including metal film from the infiltration of various impurities that may occur during subsequent processes. It can protect the manufacturing yield and the effect of increasing the reliability of the semiconductor device can be obtained.

Description

반도체 소자의 금속층간절연막 형성방법Method of forming interlayer dielectric film of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명의 일실시예에 따른 공정단면도.1 is a cross-sectional view of a process according to an embodiment of the present invention.

Claims (3)

금속막(1) 상부에 절연막(2) 형성후 SOG막 코팅, 경화 등의 공정을 수반하는 금속막과 금속막 사이에 형성되는 반도체 소자의 금속층간절연막 형성방법에 있어서, 상기 절연막(2) 상부에 SOG막을 비롯한 외부 분위기로 부터 습기, 수소이온 등 불순물의 침투를 방지하는 RTP방식에 의한 보호막(3)이 형성되는 단계를 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 금속층간절연막 형성방법.In the method for forming an interlayer insulating film of a semiconductor device, which is formed between a metal film and a metal film followed by SOG film coating, curing, and the like after forming the insulating film 2 on the metal film 1, the upper portion of the insulating film 2 Forming a protective film (3) by the RTP method for preventing the penetration of impurities such as moisture and hydrogen ions from an external atmosphere including an SOG film. 제1항에 있어서, 상기 절연막(2)은 SiH4플라즈마보조 산화막, SiH4산화막, Si-리치 산화막, TEOS산화막, TEOS-O3산화막 중 어느 하나인 것을 특징으로 하는 반도체 소자의 금속층간절연막 형성방법.2. The interlayer dielectric film of a semiconductor device according to claim 1, wherein the insulating film 2 is any one of a SiH 4 plasma assisted oxide film, a SiH 4 oxide film, a Si-rich oxide film, a TEOS oxide film, and a TEOS-O 3 oxide film. Way. 제2항에 있어서, 상기 보호막(3)은 300 내지 500Å두께의 Si3N4박막(3)인 것을 특징으로 하는 반도체 소자의 층간절연막 형성방법.3. A method according to claim 2, wherein the protective film (3) is a Si 3 N 4 thin film (3) having a thickness of 300 to 500 kW. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940012901A 1994-06-08 1994-06-08 Method of forming interlayer dielectric film of semiconductor device KR960002635A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940012901A KR960002635A (en) 1994-06-08 1994-06-08 Method of forming interlayer dielectric film of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940012901A KR960002635A (en) 1994-06-08 1994-06-08 Method of forming interlayer dielectric film of semiconductor device

Publications (1)

Publication Number Publication Date
KR960002635A true KR960002635A (en) 1996-01-26

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Family Applications (1)

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KR1019940012901A KR960002635A (en) 1994-06-08 1994-06-08 Method of forming interlayer dielectric film of semiconductor device

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990021392A (en) * 1997-08-30 1999-03-25 김영환 Method of forming protective film for semiconductor device
KR100498715B1 (en) * 1996-05-23 2005-09-02 주식회사 하이닉스반도체 Method of forming insulating film of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100498715B1 (en) * 1996-05-23 2005-09-02 주식회사 하이닉스반도체 Method of forming insulating film of semiconductor device
KR19990021392A (en) * 1997-08-30 1999-03-25 김영환 Method of forming protective film for semiconductor device

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