KR960002635A - Method of forming interlayer dielectric film of semiconductor device - Google Patents
Method of forming interlayer dielectric film of semiconductor device Download PDFInfo
- Publication number
- KR960002635A KR960002635A KR1019940012901A KR19940012901A KR960002635A KR 960002635 A KR960002635 A KR 960002635A KR 1019940012901 A KR1019940012901 A KR 1019940012901A KR 19940012901 A KR19940012901 A KR 19940012901A KR 960002635 A KR960002635 A KR 960002635A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- forming
- semiconductor device
- insulating film
- metal
- Prior art date
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
본 발명은 반도체 소자의 금속층간절연막 형성방법에 관한 것으로, 금속막(1) 상부에 절연막(2) 형성후 SOG막 코팅, 경화 등의 공정을 수반하는 금속막과 금속막 사이에 형성되는 상기 절연막(2) 상부에 SOG막을 비롯한 외부 분위기로 부터 습기, 수소이온 등 불순물의 침투를 방지하는 RTP방식에 의한 보호막(3)을 형성함으로써 후속공정중 발생할 수 있는 각종 불순물의 침투로 부터 금속막을 비롯한 하부층을 보호할 수 있어 반도체 소자의 제조수율 및 신뢰성 증대 효과를 얻을 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a metal interlayer insulating film of a semiconductor device, wherein the insulating film is formed between a metal film and a metal film following a process such as SOG film coating and curing after forming the insulating film 2 on the metal film 1. (2) Forming a protective film (3) by RTP method that prevents penetration of impurities such as moisture and hydrogen ions from the external atmosphere including SOG film on the upper layer and lower layer including metal film from the infiltration of various impurities that may occur during subsequent processes. It can protect the manufacturing yield and the effect of increasing the reliability of the semiconductor device can be obtained.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제1도는 본 발명의 일실시예에 따른 공정단면도.1 is a cross-sectional view of a process according to an embodiment of the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940012901A KR960002635A (en) | 1994-06-08 | 1994-06-08 | Method of forming interlayer dielectric film of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940012901A KR960002635A (en) | 1994-06-08 | 1994-06-08 | Method of forming interlayer dielectric film of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960002635A true KR960002635A (en) | 1996-01-26 |
Family
ID=66686121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940012901A KR960002635A (en) | 1994-06-08 | 1994-06-08 | Method of forming interlayer dielectric film of semiconductor device |
Country Status (1)
Country | Link |
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KR (1) | KR960002635A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990021392A (en) * | 1997-08-30 | 1999-03-25 | 김영환 | Method of forming protective film for semiconductor device |
KR100498715B1 (en) * | 1996-05-23 | 2005-09-02 | 주식회사 하이닉스반도체 | Method of forming insulating film of semiconductor device |
-
1994
- 1994-06-08 KR KR1019940012901A patent/KR960002635A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100498715B1 (en) * | 1996-05-23 | 2005-09-02 | 주식회사 하이닉스반도체 | Method of forming insulating film of semiconductor device |
KR19990021392A (en) * | 1997-08-30 | 1999-03-25 | 김영환 | Method of forming protective film for semiconductor device |
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