KR950703791A - OHMIC CONTACT STRUCTURE BETWEEN PLATINUM AND SILICON CARBIDE - Google Patents
OHMIC CONTACT STRUCTURE BETWEEN PLATINUM AND SILICON CARBIDE Download PDFInfo
- Publication number
- KR950703791A KR950703791A KR1019950700923A KR19950700923A KR950703791A KR 950703791 A KR950703791 A KR 950703791A KR 1019950700923 A KR1019950700923 A KR 1019950700923A KR 19950700923 A KR19950700923 A KR 19950700923A KR 950703791 A KR950703791 A KR 950703791A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- silicon carbide
- platinum
- doped
- ohmic contact
- Prior art date
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 title claims abstract 36
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract 21
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract 19
- 229910052697 platinum Inorganic materials 0.000 title claims abstract 18
- 238000000137 annealing Methods 0.000 claims abstract 6
- 239000002019 doping agent Substances 0.000 claims abstract 5
- 238000000034 method Methods 0.000 claims abstract 5
- 239000013078 crystal Substances 0.000 claims abstract 4
- 238000000151 deposition Methods 0.000 claims 8
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 claims 3
- 150000002500 ions Chemical class 0.000 claims 3
- 229910021339 platinum silicide Inorganic materials 0.000 claims 3
- 230000005540 biological transmission Effects 0.000 claims 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 2
- 230000005641 tunneling Effects 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract 6
- 239000002184 metal Substances 0.000 abstract 6
- 239000004065 semiconductor Substances 0.000 abstract 6
- 239000000463 material Substances 0.000 abstract 4
- 238000010586 diagram Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/148—Silicon carbide
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
백금과 같은 높은 일함수 금속과 탄화규소와 같은 넓은 밴드갭 반도체 사이의 최종 옴 접촉구조와 이를 형성하는 방법이 개시되며, 여기서 금속의 일함수는 금속과 반도체 사이에 옴접촉을 형성하는데 보통 불충분이다. 이 구조는 옴 특성을 유지한채 어닐링을 견딜 수 있다. 옴 접촉구조는 단결정의 넓은 밴드갭 반도체 재료부, 반도체 재료부상에 높은 일함수 금속으로 형성된 접촉, 및 단결정부와 금속접촉 사이의 도핑된 P형 반도체 재료층으로 구성된다. 도핑된 층은 금속과 반도체 재료 사이에 옴작용을 제공하기 위해서 P형 도펀드의 충분한 농도를 가진다.A final ohmic contact structure between a high work function metal such as platinum and a wide bandgap semiconductor such as silicon carbide and a method of forming the same are disclosed, wherein the work function of the metal is usually insufficient to form an ohmic contact between the metal and the semiconductor. . This structure can withstand annealing while maintaining ohmic properties. The ohmic contact structure is composed of a wide bandgap semiconductor material portion of a single crystal, a contact formed of a high work function metal on the semiconductor material portion, and a doped P-type semiconductor material layer between the single crystal portion and the metal contact. The doped layer has a sufficient concentration of P-type dopant to provide ohmic action between the metal and the semiconductor material.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1도는 본 발명에 따르는 옴접촉구조의 개요 단면도.1 is a schematic cross-sectional view of an ohmic contact structure according to the present invention.
제5도는 본 발명에 따르는 옴접촉구조의 전류-전압 도표.5 is a current-voltage diagram of an ohmic contact structure according to the present invention.
Claims (20)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP943043 | 1992-09-10 | ||
JP94304392 | 1992-09-10 | ||
PCT/US1993/008516 WO1994006153A1 (en) | 1992-09-10 | 1993-09-10 | Ohmic contact structure between platinum and silicon carbide |
US943043 | 2001-08-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950703791A true KR950703791A (en) | 1995-09-20 |
KR100244078B1 KR100244078B1 (en) | 2000-02-01 |
Family
ID=66646974
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950700923A KR100244078B1 (en) | 1992-09-10 | 1993-09-10 | Ohm contact structure between platinum and silicon carbide |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100244078B1 (en) |
-
1993
- 1993-09-10 KR KR1019950700923A patent/KR100244078B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100244078B1 (en) | 2000-02-01 |
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