KR950034500A - Substrate Film Forming Equipment - Google Patents

Substrate Film Forming Equipment Download PDF

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Publication number
KR950034500A
KR950034500A KR1019950004984A KR19950004984A KR950034500A KR 950034500 A KR950034500 A KR 950034500A KR 1019950004984 A KR1019950004984 A KR 1019950004984A KR 19950004984 A KR19950004984 A KR 19950004984A KR 950034500 A KR950034500 A KR 950034500A
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South Korea
Prior art keywords
substrate
deposition apparatus
target
voltage
substrate deposition
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KR1019950004984A
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Korean (ko)
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KR100269403B1 (en
Inventor
루돌프 라츠
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아이. 브이. 에릭 튜테.
라이볼트 악티엔게젤샤프트
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Publication of KR950034500A publication Critical patent/KR950034500A/en
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Publication of KR100269403B1 publication Critical patent/KR100269403B1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/203—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using physical deposition, e.g. vacuum deposition, sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

본 발명은 진공 챔버내에서 교류 전압에 직류 전압을 중첩시켜 인듐-틴-옥사이드(ITO : Indium-Tin-Oxide) 물질로 구성된 타게트를 스퍼터링하여 기판에 성막을 하는 설비에 관한 것으로, 사용되는 타게트는 5% 내지 10%의 산소 결핍을 가지며 90%이상의 압축도를 가진 ITO물질로 구성되며 100℃이상의 대략 200℃정도에서 우수한 전기적 저항 특성을 갖는 층을 형성할 수 있다.The present invention relates to an apparatus for forming a film on a substrate by sputtering a target made of Indium-Tin-Oxide (ITO) material by superimposing a DC voltage on an AC voltage in a vacuum chamber. It is composed of ITO material having oxygen deficiency of 5% to 10% and a compressibility of 90% or more, and can form a layer having excellent electrical resistance properties at about 200 ° C above 100 ° C.

Description

기판 성막 설비Substrate Film Forming Equipment

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에 따른 전압 변동율을 갖는 음극 스퍼터링(Sputtering)을 이용한 기판 성막(Coating) 설비의 구성도.1 is a block diagram of a substrate coating equipment using cathode sputtering having a voltage variation rate according to the present invention.

Claims (17)

교류 전압과 중첩된 직류 전압에서 타케트를 스퍼터링하여 파생된 물질로 기판에 성막을 하는 설비에 있어서, 상기 타게트 물질이 5퍼센트(%)보다 큰 산소 결핍을 갖는 인듐-틴-옥사이드(ITO)물질로 구성됨을 특징으로 하는 기판 성막 설비.In an apparatus for depositing a substrate with a material derived by sputtering a target at a DC voltage superimposed with an AC voltage, an indium-tin-oxide (ITO) material having an oxygen deficiency greater than 5 percent (%). Substrate film deposition equipment, characterized in that consisting of. 제1항에 있어서, 상기 타게트 물질의 산소 결핍이 5퍼센트 내지 10퍼센트인 것을 특징으로 하는 기판 성막 설비.2. The substrate deposition facility of claim 1, wherein the oxygen depletion of the target material is between 5 percent and 10 percent. 제1항에 있어서, 상기 인듐-틴-옥시이드(ITO) 물질이 85퍼센트보다 큰 압축도를 가짐을 특징으로 하는 기판 성막 설비.The substrate deposition apparatus of claim 1, wherein the indium-tin-oxide (ITO) material has a compressibility of greater than 85 percent. 제1항에 있어서, 상기 인듐-틴-옥시이드(ITO) 물질은 산화 인듐(In-O)를 토대로 미량의 산화 주석(Sn-O)를 첨가하여 구성됨을 특징으로 하는 기판 성막 설비.The substrate deposition apparatus of claim 1, wherein the indium-tin-oxide (ITO) material is formed by adding a trace amount of tin oxide (Sn-O) based on indium oxide (In-O). 제3항에 있어서, 상기 인듐-틴-옥사이드 물질의 압축도가 95퍼센트 이상임을 특징으로 하는 기판 성막 설비.4. The substrate deposition apparatus of claim 3, wherein the indium-tin-oxide material has a compressibility of at least 95 percent. 제4항에 있어서, 상기 인듐-틴-옥사이드의 구성비에서 첨가된 산화 주석(Sn-O)이 5퍼센트 내지 10퍼센트임을 특징으로 하는 기판 성막 설비.5. A substrate deposition apparatus according to claim 4, wherein the tin oxide (Sn-O) added in the composition ratio of indium tin oxide is 5 to 10 percent. 제1항에 있어서, 상기 타게트는 교류 전류와 중첩된 직류 전류를 공급하는 직류 전압원 및 고주파수 전압원과 연결되어 있는 마그네트론 음극과, 음극, 및 다수의 영구자석과 접속되어 있음을 특징으로 하는 기판 성막 설비.The substrate deposition apparatus of claim 1, wherein the target is connected to a magnetron cathode connected to a direct current voltage source and a high frequency voltage source supplying a direct current superimposed with an alternating current, a cathode, and a plurality of permanent magnets. . 제1항에 있어서, 상기 성막이 되는 기판을 성막 공정동안 가열됨을 특징으로 하는 기판 성막 설비.The substrate deposition apparatus according to claim 1, wherein the substrate to be deposited is heated during the deposition process. 제8항에 있어서, 상기 기판은 양호한 전기적 전도성을 얻도록 대략 200℃로 가열됨을 특징으로 하는 기판 성막 설비.The substrate deposition apparatus of claim 8, wherein the substrate is heated to approximately 200 ° C. to obtain good electrical conductivity. 제1항에 있어서, 상기 타게트 물질로 기판에 성막을 하는 설비에 있어서 호형(Arc) 자계에 공급되어 소정의 시간동안 상기 타게트로 부터 직류 전압을 제거하는 개폐 장치(Switching Device)를 포함하여 구성됨을 특징으로 하는 기판 성막 설비.The apparatus of claim 1, further comprising a switching device which is supplied to an arc magnetic field and removes a DC voltage from the target for a predetermined time in a facility for forming a film on the substrate with the target material. Substrate film deposition equipment characterized by the above-mentioned. 제10항에 있어서, 상기 개폐 장치는 상기 타게트로 부터 치환 소비자로 직류 전압을 환송하는 전환 장치(Switch-Over)임을 특징으로 하는 기판 성막 설비.11. The substrate deposition apparatus of claim 10, wherein the switchgear is a switch-over for transferring a DC voltage from the target to a replacement consumer. 제10항에 있어서, 상기 개폐 장치는 방전 전압에서 장애를 검출하는 장치에 의하여 제어되며 수 마이크로 초 동안 직류 전압을 상기 타케트로 부터 상기 치환 소비자로 전환시킴을 특징으로 하는 기판 성막 설비.11. The substrate deposition apparatus of claim 10, wherein the switchgear is controlled by a device that detects a failure in discharge voltage and converts a direct current voltage from the target to the replacement consumer for several microseconds. 제1항에 있어서, 상기 공급되는 직류 전류와 고 주파주 전류는 조정되는 전력으로 동작됨을 특징으로 하는 기판 성막 설비.2. The substrate deposition apparatus of claim 1, wherein the supplied direct current and high frequency current are operated with regulated power. 제1항 또는 제10항에 있어서, 상기 직류 전압은 고 주파수 필터 및 상기 타게트와 상기 직류 전압원사이에 위치하여 소정의 시간동안 상기 타게트로 부터 직류 전압을 제거하는 상기 개폐 장치를 통하여 상기 타게트로 공급됨을 특징으로 하는 기판 성막 설비.11. The method of claim 1 or 10, wherein the DC voltage is supplied to the target through the high frequency filter and the switchgear located between the target and the DC voltage source to remove the DC voltage from the target for a predetermined time. Substrate deposition equipment, characterized in that. 제1항에 있어서, 상기 타게트는 각각의 가스 탱크로 부터 단일 가스 또는 혼합 가스가 투입되는 진공챔버(Vacuum Chamber) 내에서 기판에 증착됨을 특징으로 하는 기판 성막 설비.The substrate deposition apparatus of claim 1, wherein the target is deposited on a substrate in a vacuum chamber into which a single gas or a mixed gas is introduced from each gas tank. 제15항에 있어서, 상기 각각의 가스 탱크에 연결되어 있는 두개의 가스 급송관증의 한개는 성막공정시에 단일 반응 가스 또는 혼합 반응 가스를 공급하는 제어 밸브로 구성됨을 특징으로 하는 기판 성막 설비.16. The substrate deposition apparatus according to claim 15, wherein one of the two gas supply pipes connected to each gas tank is configured with a control valve for supplying a single reaction gas or a mixed reaction gas during the film formation process. 제16항에 있어서, 상기 급속관중의 나머지 관은 성막 공정으로 소정의 작업 가스를 공급함을 특징으로 하는 기판 성막 설비.The substrate deposition apparatus according to claim 16, wherein the remaining tubes in the rapid tube supply a predetermined working gas in a film forming process. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950004984A 1994-04-19 1995-03-10 Installation for coating a substrate KR100269403B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP4413378.2 1994-04-19
DE4413378A DE4413378A1 (en) 1994-04-19 1994-04-19 Appts. for coating substrate with material

Publications (2)

Publication Number Publication Date
KR950034500A true KR950034500A (en) 1995-12-28
KR100269403B1 KR100269403B1 (en) 2000-12-01

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JP (1) JPH07310178A (en)
KR (1) KR100269403B1 (en)
DE (1) DE4413378A1 (en)
NL (1) NL9500634A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19826297A1 (en) * 1998-06-12 1999-12-16 Aurion Anlagentechnik Gmbh Apparatus and method for avoiding arcing by active arc suppression during sputtering
DE10216671A1 (en) * 2002-04-15 2003-12-18 Applied Films Gmbh & Co Kg coating plant
KR101194645B1 (en) * 2004-12-31 2012-10-24 엘지디스플레이 주식회사 Ac magnetron sputtering
JP5743266B2 (en) 2010-08-06 2015-07-01 キヤノンアネルバ株式会社 Film forming apparatus and calibration method

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55145170A (en) * 1979-04-28 1980-11-12 Tokuda Seisakusho Ltd Arc-breaking method of direct current electric discharge unit and its circuit
DE3300525A1 (en) * 1983-01-10 1984-07-12 Merck Patent Gmbh, 6100 Darmstadt TARGETS FOR CATHOD SPRAYING
JPS6340756A (en) * 1986-08-07 1988-02-22 旭硝子株式会社 Indium oxide sintered body for tin-containing physical vapor deposition
DE3821207A1 (en) * 1988-06-23 1989-12-28 Leybold Ag ARRANGEMENT FOR COATING A SUBSTRATE WITH DIELECTRICS
JPH0784654B2 (en) * 1989-07-13 1995-09-13 株式会社ジャパンエナジー Method for manufacturing sputtering target for ITO transparent conductive film
JPH0765167B2 (en) * 1989-07-13 1995-07-12 株式会社ジャパンエナジー Sputtering target for ITO transparent conductive film
JPH03207858A (en) * 1990-01-08 1991-09-11 Nippon Mining Co Ltd Production of ito sputtering target
JP2936276B2 (en) * 1990-02-27 1999-08-23 日本真空技術株式会社 Method and apparatus for manufacturing transparent conductive film
DE4109018C2 (en) * 1991-03-20 2002-02-28 Unaxis Deutschland Holding Device for coating a substrate
JPH04325676A (en) * 1991-04-25 1992-11-16 Seiko Epson Corp Method and apparatus for producing transparent conductive film and liquid crystal display element
DE4124471C1 (en) * 1991-07-24 1992-06-11 Degussa Ag, 6000 Frankfurt, De Target for cathodic sputtering - produced from partially reduced mixtures of indium oxide and tin oxide by hot pressing in inert protective gas
DE4127505C2 (en) * 1991-08-20 2003-05-08 Unaxis Deutschland Holding Device for suppressing arcs in gas discharge devices

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Publication number Publication date
NL9500634A (en) 1995-12-01
KR100269403B1 (en) 2000-12-01
JPH07310178A (en) 1995-11-28
DE4413378A1 (en) 1995-10-26

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