KR950033568A - Liquid Crystal Display Using P-N Junction Diode and Manufacturing Method Thereof - Google Patents

Abstract

The device for driving a pixel of the liquid crystal display according to the present invention includes a P-type polysilicon 11a to which an amorphous silicon resistor 11 is connected to a pixel electrode 8a formed on a glass substrate 1. By contacting the N-type polycrystalline silicon 11b, a PN junction diode 11c serving as a switch for supplying charge to the inflorescence electrode is formed, and a part of the pixel electrode 8a and the intermediate insulating film 3 and metal deposited thereon are formed. By providing a storage capacitor 14 using a line.

Description

Liquid Crystal Display Using P-N Junction Diode and Manufacturing Method Thereof

Since this is an open matter, no full text was included.

Fig. 1 (a) is a cross-sectional view of a conventional amorphous silicon thin film transistor, (b) is a cross-sectional view of a conventional polycrystalline silicon thin film transistor, and (a)-(b) is a PN junction diode according to the present invention. 3 is a plan view showing each step of the manufacturing process of one unit cell of the pixel driving element of the liquid crystal display using Fig. 3 is a cross-sectional view of each of Figs. FIG. 3B is a cross-sectional view when cut along the line A-A 'of FIG. 2A, and FIG. 3B is a cross-sectional view when cut along the line B-B' of FIG. 2B, (C) is sectional drawing in the case cut along the line C-C 'of FIG. 2 (c). 4A is a layout diagram of a preferred embodiment of a pixel drive element of a liquid crystal display device according to the present invention, and FIG. 4B is an equivalent circuit diagram of a preferred embodiment of a pixel drive element of a liquid crystal display device according to the present invention.

Claims (14)

A substrate, a pixel electrode formed on the substrate, a partial region on the pixel electrode, a partial region on the substrate, an amorphous silicon resistor connected to the P-type polysilicon, and an all-over portion An interlayer insulating film, a portion of the region in contact with the P-type polycrystalline silicon on the pixel electrode, and a portion of the region of the N-type polycrystalline silicon disposed on the substrate, and a first metal line in contact with the P-type polycrystalline silicon disposed on the substrate A second metal wire disposed on a portion of the pixel electrode with the first interlayer insulating film interposed therebetween, a second interlayer insulating film covering all the couples, and a third contacting N-type polycrystalline silicon disposed on the substrate The P-type polysilicon and the N-type polycrystalline silicon including a metal line and in contact with the pixel electrode constitute a PN junction diode. And serves as a capacitor for supplying electric charges to the pixel electrode along with an amorphous silicon resistor, and an red portion in which a second metal line is formed on a part of the pixel electrode with the first interlayer dielectric layer therebetween acts as a capacitor. The pixel drive element of the liquid crystal display device characterized by the above-mentioned. The pixel drive element of a liquid crystal display device according to claim 1, wherein the substrate is glass. The pixel drive element of a liquid crystal display device according to claim 1, wherein the first metal line is one metal selected from the group consisting of Al and Cu. The pixel driving element of a liquid crystal display device according to claim 1, wherein the second metal line is one metal selected from the group consisting of Al and Cu. The pixel driving element of a liquid crystal display device according to claim 1, wherein the third metal line is one metal selected from the group consisting of Al and Cu. Forming a pixel electrode over the substrate, depositing amorphous silicon of a conductive type such that some regions are disposed on the pixel electrode and other regions are disposed on the substrate, and forming an electrode; Depositing an interlayer insulating film, depositing and patterning a metal capable of reflecting an excimer laser on the first interlayer insulating film to form an amorphous silicon resistance, amorphous silicon in the amorphous silicon region of the conductive type Scanning an excimer laser on the silicon of the conductive type to crystallize the remaining regions except the resistive region, etching the one layer of the crystallized silicon region interlayer insulating film of the one conductive type that is in contact with the pixel electrode, holes), and some areas are disposed on the contact holes, and other areas are disposed on the substrate. Depositing and patterning the conductive inversely conductive amorphous silicon, followed by crystallization using an excimer laser, a scanning first metal wire in contact with the polycrystalline silicon region of the one conductive type, and the first Simultaneously forming a second metal line for forming a storage capacitor on a portion of the pixel electrode adjacent to the metal line, depositing a second interlayer dielectric film over the entire substrate, and the reverse conductivity type polycrystalline silicon region Forming a third metal wire for data in contact with a portion of the; and in the step of scanning an exa laser with the conductive polycrystalline silicon region, the bottom portion of the metal film where the laser is blocked by the metal film Amorphous silicon is not crystallized and remains in an amorphous state to form an amorphous silicon resistance, and a contact hole on the pixel electrode The polyconductive silicon regions of different conductivity types contacted through each other constitute a PN junction diode, and the second metal wire, the interlayer insulating film under the second metal wire, and the pixel electrode under the second metal wire act as storage capacitors. The manufacturing method of the pixel drive element of a liquid crystal display device. The method of manufacturing a pixel driving element of a liquid crystal display device according to claim 6, wherein the substrate is glass. The method of manufacturing a pixel drive element of a liquid crystal display device according to claim 6, wherein the one conductivity type is P type and the reverse conductivity type is N type. 7. The method of manufacturing a pixel drive element of a liquid crystal display device according to claim 6, wherein the one conductivity type is N type and the reverse conductivity type is P type. 7. The method of claim 6, wherein the metal capable of reflecting the excimer laser is made of Al. 7. The method of manufacturing a pixel drive element of a liquid crystal display device according to claim 6, wherein the crystallization of the amorphous silica is performed by an exa laser at 300 ° C or lower. 7. The pixel driving element of claim 6, wherein the first metal line is one metal selected from the group consisting of Al and Cu. The pixel driving element of a liquid crystal display device according to claim 6, wherein the second metal line is one metal selected from the group consisting of Al and Cu. The pixel drive element of a liquid crystal display device according to claim 6, wherein the third metal line is one metal selected from the group consisting of Al and Cu. ※ Note: The disclosure is based on the initial application.