KR20160088788A - Display device - Google Patents

Abstract

Provided is a display device which includes a substrate, a first conduction line which is arranged on the substrate and is extended in a first direction, a second conduction line which is arranged on the first conduction line and intersects with the first direction, and a pixel part which is connected between the first conduction line and the second conduction line which intersect with each other. So, the display device including a phase transition material can be provided.

Description

DISPLAY DEVICE {DISPLAY DEVICE}

The present invention relates to a display device, and more particularly to a display device using a phase change material.

The importance and interest of displays in modern electronic devices is increasing day by day. Of these, interest in large displays and ultra-small displays with high resolution and high-speed response is continuously increasing, and a lot of research and development is proceeding accordingly.

The phase transition material undergoes a sharp phase transition, such as crystalline or amorphous, to external stimuli such as heat, light or electrical stimuli. The phase-change material has potential for development as an optical material due to the difference in the optical characteristics of the phases in the phase change. When a display device is manufactured using such a phase change material, the optical transmittance and reflection characteristics of the device can be controlled by the refractive index difference in each phase and the thickness of each layer.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a display device including a phase transition material.

Another object of the present invention is to provide a display device having a high resolution.

The problems to be solved by the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

According to an aspect of the present invention, there is provided a display device including a substrate, a first conductive line disposed on the substrate and extending in a first direction, a second conductive line disposed on the first conductive line, And a pixel portion connected between the first conductive line and the second conductive line intersecting with each other.

According to one embodiment, the pixel portion may include a selection diode disposed on the first conductive line, and an indicator layer disposed on the selection diode.

According to one embodiment, the display layer may comprise a phase transition material.

The display device according to the embodiment of the present invention has a structure in which each pixel portion is simply stacked in the vertical direction, which can contribute to simplification of the structure and simplification of the process. Accordingly, since the area required for forming each pixel portion of the display element is small, a very high degree of directivity can be realized, and a display element having an extremely high resolution can be easily constructed. Further, as the constituent elements constituting each pixel portion are vertically stacked, the area occupied by the display layer in the display element, that is, the aperture ratio, can be high. As a result, the on / off ratio of the display element can be increased.

1 is a circuit diagram schematically showing a part of a display device according to embodiments of the present invention.
2 is a perspective view showing a part of the display element of Fig.

In order to fully understand the structure and effects of the present invention, preferred embodiments of the present invention will be described with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. It will be apparent to those skilled in the art that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof. Those of ordinary skill in the art will understand that the concepts of the present invention may be practiced in any suitable environment. Like reference numerals refer to like elements throughout the specification.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. As used herein, the terms 'comprises' and / or 'comprising' mean that the stated element, step, operation and / or element does not imply the presence of one or more other elements, steps, operations and / Or additions.

In the present specification, when it is mentioned that a surface (or layer) is on another surface (or layer) or substrate, it may be directly formed on the other surface (or layer) or substrate, or a third surface Or layer) may be interposed.

 Although the terms first, second, third, etc. have been used in various embodiments herein to describe various regions, faces (or layers), etc., it is to be understood that these regions, Can not be done. These terms are only used to distinguish certain regions or faces (or layers) from other regions or faces (or layers). Thus, the face referred to as the first face in either embodiment may be referred to as the second face in other embodiments. Each embodiment described and exemplified herein also includes its complementary embodiments. Like numbers refer to like elements throughout the specification.

In addition, the embodiments described herein will be described with reference to cross-sectional plan views and / or perspective views, which are ideal illustrations of the present invention. In the drawings, the thicknesses of the films and regions are exaggerated for an effective description of the technical content. Thus, the shape of the illustrations may be modified by manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention are not limited to the specific forms shown, but also include changes in the shapes that are generated according to the manufacturing process. For example, the etched area shown at right angles may be rounded or may have a shape with a certain curvature. Thus, the regions illustrated in the figures have schematic attributes, and the shapes of the regions illustrated in the figures are intended to illustrate specific types of regions of the elements and are not intended to limit the scope of the invention.

The terms used in the embodiments of the present invention may be construed as commonly known to those skilled in the art unless otherwise defined.

Hereinafter, the present invention will be described in detail with reference to the preferred embodiments of the present invention with reference to the accompanying drawings.

1 is a circuit diagram schematically showing a part of a display device according to embodiments of the present invention.

Referring to FIG. 1, the display device may include a plurality of first conductive lines 21, second conductive lines 22, and pixel portions 30. The first conductive lines 21 and the second conductive lines 22 intersect each other. The plurality of pixel portions 30 may be two-dimensionally arranged. The pixel portions 30 may be connected between the first conductive lines 21 and the second conductive lines 22 which intersect with each other. For example, each of the pixel portions 30 may include a selection diode 31 and a variable resistance element 33 electrically connected to the selection diode 31. More specifically, one end of the selection diode 31 is electrically connected to the variable resistive element 33, and the other end of the selection diode 31 is electrically connected to the first conductive line 21. The variable resistive element 33 may include a phase change material. For example, the variable resistive element 33 may include a binary material including GeSb, InSb, Sb2Te3, GeTe or Sb-Se. Alternatively, the variable resistive element 33 may include a ternary material including GST (Ge2Sb2Te5), AST (As-Sb-Te), Se-Sb-Te, GeSb2Te4 or SiSbTe. Alternatively, the variable resistive element 33 may include a quaternary material including AgInSbTe, (GeSn) SbTe, GeSb (SeTe), or Si-Ge-Sb-Te. The variable resistance element 33 may correspond to the display layer described in Fig. According to one embodiment, a bridge electrode (not shown) may further be provided between the selection diode 31 and the variable resistive element 33. The bridge electrode (not shown) may be provided as a bridge for electrically connecting the selection diode 31 and the variable resistive element 33.

A forward bias may be applied to the first conductive line 21 to operate the selection diode 31. At this time, a voltage may be applied to the second conductive line 22 to allow the current to flow through the variable resistive element 33. The phase of the variable resistive element 33 can be changed depending on the amount of the current flowing in the variable resistive element 33. [ The variable resistive element 33 may have a memory effect. When a reverse bias is applied to the first conductive line 21, the current flowing through the variable resistive element 33 can be cut off. At this time, the variable resistive element 33 maintains the changed phase. That is, the phase change display device according to the embodiment of the present invention can maintain the image information during the frame without being driven by the active matrix method.

2 is a perspective view showing a part of the display element of Fig.

Referring to Figure 2, a substrate 10 is provided. The substrate 10 may be a transparent substrate. For example, the substrate 10 may comprise glass or a transparent plastic material. Alternatively, the substrate 10 may comprise an opaque substrate. Although not shown, the substrate 10 may include a buffer layer or the like made of an insulating material on the substrate 10, if necessary.

At least one first conductive line (21) may be disposed on the substrate (10). In detail, a plurality of first conductive lines 21 may be arranged on the substrate 10. [ For example, the first conductive lines 21 may extend in a first direction D1 parallel to the substrate 10. The first conductive lines 21 may be spaced apart from one another in a second direction D2 that is parallel to the substrate 10 and perpendicular to the first direction D1. The first conductive lines 21 may be used as a lower electrode of a selection diode 31 described later. The first conductive lines 21 may comprise a transparent conductive material. For example, the first conductive lines 21 may include ITO (indium tin oxide), IZO (indium zinc oxide), or a metal thin film. Alternatively, the first conductive lines 21 may comprise an opaque conductive material. For example, the first conductive lines 21 may include a bulk metal used for the reflective electrode, such as silver (Ag), aluminum (Al), platinum (Pt), or a compound thereof.

At least one second conductive line 22 may be disposed on the first conductive lines 21. In detail, a plurality of second conductive lines 22 may be arranged on the first conductive lines 21. [ For example, the second conductive lines 22 may extend in a second direction D2 that intersects the first conductive lines 21, where the second conductive lines 22 extend The two directions D2 may be parallel to the substrate 10. The second conductive lines 22 may be spaced apart from each other in the first direction D1. The second conductive lines 22 may be spaced from the first conductive lines 21 in a third direction D3 perpendicular to the first and second directions D1 and D2. The second conductive lines 22 may be used as the upper electrode of the display layer 33 described later. The second conductive lines 22 may comprise a transparent conductive material. For example, the second conductive lines 22 may include indium tin oxide (ITO), indium zinc oxide (IZO), or a metal thin film.

The pixel portions 30 may be disposed at each point where the first conductive lines 21 and the second conductive lines 22 intersect. Each pixel portion 30 may electrically connect the first conductive line 21 and the second conductive line 22. Each of the pixel units 30 can receive an electrical signal from the first conductive line 21 and the second conductive line 22 to display color and operate as a unit pixel of the display device. Each pixel portion 30 may include a selection diode 31 and a display layer 33 which are sequentially stacked.

The selection diode 31 may include a first semiconductor pattern 31a and a second semiconductor pattern 31b. The first semiconductor pattern 31a and the second semiconductor pattern 31b may have either n-type or p-type, but may be of different types. The selection diode 31 can operate as a selection element for selectively controlling the flow of electric charge passing through the display layer 33 to be described later. For example, the selection diode 31 selectively passes a current according to the direction of a voltage applied to the first conductive line 21 and the second conductive line 22 so that the corresponding pixel portion 30 is selected can do.

The display layer 33 may be disposed on the selection diode 31. [ The display layer 33 may comprise a phase change material that causes a phase transition to an electrical signal or source of heat. The phase transition material may change its phase as the voltage is applied. For example, the phase change material can be converted into crystalline or amorphous by heat or voltage due to electric current. Depending on the phase of the phase change material, the refractive index, transmittance, and color of the display layer 33 Can be changed. For example, a back light may be disposed under the substrate 10 of the display element, and the light emitted from the back light passes through the display layer 33 and passes through the phase of the display layer 33 ), The intensity and wavelength of which can be changed. The display layer 33 may include binary materials including GeSb, InSb, Sb2Te3, GeTe or Sb-Se. Alternatively, the display layer 33 may include a ternary material including GST (Ge2Sb2Te5), AST (As-Sb-Te), Se-Sb-Te, GeSb2Te4 or SiSbTe. Alternatively, the display layer 33 may comprise a quaternary material including AgInSbTe, (GeSn) SbTe, GeSb (SeTe), or Si-Ge-Sb-Te.

According to one embodiment, the pixel portion 30 may further include a bridge electrode 32 disposed between the selection diode 31 and the display layer 33. The bridge electrode 32 may be used as an upper electrode of the selection diode 31 and a lower electrode of the display layer 33. [ The bridge electrode 32 may comprise a transparent electrode. For example, the bridge electrode 32 may include ITO (indium tin oxide), IZO (indium zinc oxide), or a metal thin film. The bridge electrode 32 may be provided as a bridge for electrically connecting the selection diode 31 and the display layer 33.

The display device according to the embodiment of the present invention has a structure in which each pixel portion is simply stacked in the vertical direction, which can contribute to simplification of the structure and simplification of the process. Accordingly, since the area required for implementing each pixel portion of the display element is small, a very high degree of directivity can be realized and a display element with an extremely high resolution can be constructed. Further, as the constituent elements constituting each pixel portion are vertically stacked, the area occupied by the display layer in the display element, that is, the aperture ratio, can be high. As a result, the on / off ratio of the display element can be increased.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive.

10: substrate 21: first conductive line
22: second conductive line 31: selection diode
32: bridge electrode 33: display layer

Claims (1)

Board;
A first conductive line disposed on the substrate and extending in a first direction;
A second conductive line disposed on the first conductive line and extending to a second conductive line intersecting the first direction; And
And a pixel portion connected between the first conductive line and the second conductive line intersecting with each other,
The pixel unit includes:
A selection diode disposed on the first conductive line; And
And a display layer disposed on the selection diode,
Wherein the display layer comprises a phase transition material.

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