KR950020966U - Shared DRAM Reflash Circuit - Google Patents

Shared DRAM Reflash Circuit

Info

Publication number
KR950020966U
KR950020966U KR2019930030753U KR930030753U KR950020966U KR 950020966 U KR950020966 U KR 950020966U KR 2019930030753 U KR2019930030753 U KR 2019930030753U KR 930030753 U KR930030753 U KR 930030753U KR 950020966 U KR950020966 U KR 950020966U
Authority
KR
South Korea
Prior art keywords
reflash
circuit
shared dram
dram
shared
Prior art date
Application number
KR2019930030753U
Other languages
Korean (ko)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to KR2019930030753U priority Critical patent/KR950020966U/en
Publication of KR950020966U publication Critical patent/KR950020966U/en

Links

KR2019930030753U 1993-12-30 1993-12-30 Shared DRAM Reflash Circuit KR950020966U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019930030753U KR950020966U (en) 1993-12-30 1993-12-30 Shared DRAM Reflash Circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019930030753U KR950020966U (en) 1993-12-30 1993-12-30 Shared DRAM Reflash Circuit

Publications (1)

Publication Number Publication Date
KR950020966U true KR950020966U (en) 1995-07-26

Family

ID=60841518

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019930030753U KR950020966U (en) 1993-12-30 1993-12-30 Shared DRAM Reflash Circuit

Country Status (1)

Country Link
KR (1) KR950020966U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100689863B1 (en) * 2005-12-22 2007-03-08 삼성전자주식회사 Semiconductor memory device and method therefore

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100689863B1 (en) * 2005-12-22 2007-03-08 삼성전자주식회사 Semiconductor memory device and method therefore

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Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid