KR950019775A - Evaluation Method of Lens Characteristics of Reduced Exposure Equipment - Google Patents

Evaluation Method of Lens Characteristics of Reduced Exposure Equipment Download PDF

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Publication number
KR950019775A
KR950019775A KR1019930031840A KR930031840A KR950019775A KR 950019775 A KR950019775 A KR 950019775A KR 1019930031840 A KR1019930031840 A KR 1019930031840A KR 930031840 A KR930031840 A KR 930031840A KR 950019775 A KR950019775 A KR 950019775A
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KR
South Korea
Prior art keywords
photosensitive film
lens characteristics
reduced exposure
evaluating
exposure apparatus
Prior art date
Application number
KR1019930031840A
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Korean (ko)
Inventor
배상만
Original Assignee
김주용
현대전자산업 주식회사
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930031840A priority Critical patent/KR950019775A/en
Publication of KR950019775A publication Critical patent/KR950019775A/en

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Abstract

본 발명은 축소노광 장치의 렌즈 특성 평가방법에 관한 것으로 감광막 패턴을 가로축 n개 세로축 m개의 블럭을 한 다이 내에 형성하여 CD(critical dimension)를 측정함으로써 필드전체의 이상 유무를 확인할 수 있으며 렌즈 가공 상태를 점검하는 방법에 관한 것이다.The present invention relates to a method for evaluating lens characteristics of a reduced exposure apparatus. The photosensitive film pattern is formed in one die with n horizontal axes and m vertical axes in one die to measure the CD (critical dimension) to check whether there is an abnormality of the entire field and the lens processing state. It is about how to check.

Description

축소노광 장치의 렌즈 특성 평가방법Evaluation Method of Lens Characteristics of Reduced Exposure Equipment

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명에 의한 렌즈 특성 평가를 위한 패턴을 도시한 평면도.3 is a plan view showing a pattern for lens characteristic evaluation according to the present invention.

Claims (3)

축소노광 장치의 렌즈 특성 평가방법에 있어서, 실리콘 웨이퍼 상부에 감광막을 도포한 후 가로축n, 세로축 m개의 블럭을 한 다이 내에 0.5㎛∼1㎛의 사각형 크기로 감광막 패턴을 형성하여서 감광막의 잔류 이미지 패턴을 형성함으로서 렌즈특성을 평가하는 것을 특징으로 하는 축소노광 장치 렌즈 특성 평가방법.In the method for evaluating lens characteristics of a reduced exposure apparatus, after the photosensitive film is coated on the silicon wafer, a photosensitive film pattern is formed in a die having a horizontal axis n and m vertical axis blocks in a die size of 0.5 μm to 1 μm, thereby remaining the image pattern of the photosensitive film. And evaluating the lens characteristics by forming a lens. 제1항에 있어서, 감광막은 네가티브 감광막인 것을 특징으로 하는 축소노광 장치의 렌즈 특성 평가방법.The method of evaluating lens characteristics of a reduced exposure apparatus according to claim 1, wherein the photosensitive film is a negative photosensitive film. 제1항에 있어서, 상기 n×m개의 감광막 패턴 상에 노광에너지를 적게하여 감광막의 잔류이미지 패턴을 형성하는 것을 특징으로 하는 축소노광 장치의 렌즈 특성 평가방법.The method of evaluating lens characteristics of a reduced exposure apparatus according to claim 1, wherein the residual image pattern of the photosensitive film is formed by reducing exposure energy on the n × m photosensitive film patterns. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930031840A 1993-12-31 1993-12-31 Evaluation Method of Lens Characteristics of Reduced Exposure Equipment KR950019775A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930031840A KR950019775A (en) 1993-12-31 1993-12-31 Evaluation Method of Lens Characteristics of Reduced Exposure Equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930031840A KR950019775A (en) 1993-12-31 1993-12-31 Evaluation Method of Lens Characteristics of Reduced Exposure Equipment

Publications (1)

Publication Number Publication Date
KR950019775A true KR950019775A (en) 1995-07-24

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930031840A KR950019775A (en) 1993-12-31 1993-12-31 Evaluation Method of Lens Characteristics of Reduced Exposure Equipment

Country Status (1)

Country Link
KR (1) KR950019775A (en)

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