KR950015816A - Differential hydrogen ion concentration (pH) sensor using ion sensing field effect transistor (ISFET) - Google Patents

Differential hydrogen ion concentration (pH) sensor using ion sensing field effect transistor (ISFET) Download PDF

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Publication number
KR950015816A
KR950015816A KR1019930024865A KR930024865A KR950015816A KR 950015816 A KR950015816 A KR 950015816A KR 1019930024865 A KR1019930024865 A KR 1019930024865A KR 930024865 A KR930024865 A KR 930024865A KR 950015816 A KR950015816 A KR 950015816A
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South Korea
Prior art keywords
field effect
effect transistor
isfet
sensing field
sensor
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KR1019930024865A
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Korean (ko)
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KR970003739B1 (en
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김철
오승철
강명성
하병주
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김동진
주식회사 카 스
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

본 발명은 이온감지 전계효과 트랜지스터(ISFET)를 이용한 차동형 수소이온농도(pH) 센서에 관한 것으로, 특히 용액중의 수소이온에 감응하여 그에따른 전류를 출력하는 이온감지 전계효과 트랜지스터(ISFET)(10)와, 이 트랜지스터(10)의 출력을 증폭하는 증폭기(OPI)와, 이온감지 전계효과 트랜지스터(ISFET)의 감지막(30) 위에 용액중의 수소이온에 감응하지 않는 수화겔(70)을 도포하고 그 일부분에 액계면을 형성한 기준 전계효과 트랜지스터(REFET)(50)와, 이 트랜지스터(50)의 출력을 증폭하는 증폭기(OP2)와, 상기 증폭기(OPI, OP2)의 출력을 차동 증폭하는 증폭기(OP3)로 구성되어, 크기가 큰 상용기준 전극을 금속전극으로 대체할 수 있어 PH-센서를 소형화할 뿐만 아니라 불안정한 동작특성을 개선할 수 있다.The present invention relates to a differential hydrogen ion concentration (pH) sensor using an ion sensing field effect transistor (ISFET), in particular an ion sensing field effect transistor (ISFET) (10) that outputs a corresponding current in response to hydrogen ions in a solution. ), An amplifier (OPI) for amplifying the output of the transistor (10), and a hydrogel (70) that is not sensitive to hydrogen ions in solution is applied on the sensing film (30) of the ion sensing field effect transistor (ISFET). A reference field effect transistor (REFET) 50 having a liquid interface formed in a portion thereof, an amplifier OP2 for amplifying the output of the transistor 50, and an amplifier for differentially amplifying the outputs of the amplifiers OPI and OP2. (OP3), it is possible to replace a large commercial reference electrode with a metal electrode, which can reduce the PH-sensor and improve the unstable operation characteristics.

Description

이온감지 전계효과 트랜지스터(ISFET)를 이용한 차동형 수소이온농도(pH)센서Differential hydrogen ion concentration (pH) sensor using ion sensing field effect transistor (ISFET)

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 구성도이고,1 is a configuration diagram of the present invention,

제2도는 REFET의 내부물질의 수화겔로 KCl을 사용하였을 때의 ISFET, REFET 및 차동출력의 pH에 대한 감지 특성도로2 is a sensing characteristic diagram of pH of ISFET, REFET and differential output when KCl is used as the hydrogel of the internal material of REFET.

(가)는 상용기준전극(Ag/AgCl)을 사용하였을 때의 pH에 대한 감지 특성도이며,(A) is a detection characteristic diagram for pH when using a commercial reference electrode (Ag / AgCl),

(나)는 금속전극(Pt)을 사용하였을 때의 pH에 대한 감지 특성도이고,(B) is a sensing characteristic diagram for pH when the metal electrode Pt is used,

제3도는 REFET의 내부물질의 수화겔로 KCl을 사용하고 금속전극(Pt)을 사용하였을 때의 온도의존도이며,3 is a temperature dependence when KCl is used and a metal electrode Pt is used as a hydrogel of an internal material of a REFET.

Claims (1)

용액중의 수소이온에 감응하여 그에따른 전류를 출력하는 이온감지 전계효과 트랜지스터(ISFET)(10)와, 이 트랜지스터(10)의 출력을 증폭하는 증폭기(OP1)와, 이온감지 전계효과 트랜지스터(ISFET)의 감지막(12) 위에 용액중의 수소이온에 감응하지 않는 수화겔(24)을 도포하고 그 일부분에 액계면을 형성한 기준 전계효과 트랜지스터(REFET)(20)와, 이 트랜지스터(20)의 출력을 증폭하는 증폭기(OP2)와, 상기 증폭기(OP1, OP2)의 출력을 차동증폭하는 증폭기(OP3)로 구성된 것을 특징으로 하는 이온감지 전계효과 트랜지스터(ISFET)를 이용한 차동형 수소이온농도(pH) 센서.An ion sensing field effect transistor (ISFET) 10 that responds to hydrogen ions in a solution and outputs a corresponding current, an amplifier OP1 that amplifies the output of the transistor 10, and an ion sensing field effect transistor (ISFET). A reference field effect transistor (REFET) 20 in which a hydrogel 24 which is not sensitive to hydrogen ions in a solution is applied on a sensing film 12 of the NELTA. Differential hydrogen ion concentration (pH) using an ion sensing field effect transistor (ISFET) comprising an amplifier (OP2) for amplifying the output and an amplifier (OP3) for differentially amplifying the output of the amplifier (OP1, OP2) sensor. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930024865A 1993-11-20 1993-11-20 Hydrogen ion density sensor KR970003739B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930024865A KR970003739B1 (en) 1993-11-20 1993-11-20 Hydrogen ion density sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930024865A KR970003739B1 (en) 1993-11-20 1993-11-20 Hydrogen ion density sensor

Publications (2)

Publication Number Publication Date
KR950015816A true KR950015816A (en) 1995-06-17
KR970003739B1 KR970003739B1 (en) 1997-03-21

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KR1019930024865A KR970003739B1 (en) 1993-11-20 1993-11-20 Hydrogen ion density sensor

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Publication number Priority date Publication date Assignee Title
KR101590531B1 (en) * 2015-10-23 2016-02-01 대윤계기산업 주식회사 pH measuring device

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