KR950009845A - Manufacturing Method of Plasma Display Device - Google Patents

Manufacturing Method of Plasma Display Device Download PDF

Info

Publication number
KR950009845A
KR950009845A KR1019930018073A KR930018073A KR950009845A KR 950009845 A KR950009845 A KR 950009845A KR 1019930018073 A KR1019930018073 A KR 1019930018073A KR 930018073 A KR930018073 A KR 930018073A KR 950009845 A KR950009845 A KR 950009845A
Authority
KR
South Korea
Prior art keywords
dielectric layer
electrode
dielectric material
display device
manufacturing
Prior art date
Application number
KR1019930018073A
Other languages
Korean (ko)
Other versions
KR970011494B1 (en
Inventor
이춘우
조영호
Original Assignee
엄길용
오리온전기 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엄길용, 오리온전기 주식회사 filed Critical 엄길용
Priority to KR1019930018073A priority Critical patent/KR970011494B1/en
Publication of KR950009845A publication Critical patent/KR950009845A/en
Application granted granted Critical
Publication of KR970011494B1 publication Critical patent/KR970011494B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
    • H01J11/20—Constructional details
    • H01J11/34—Vessels, containers or parts thereof, e.g. substrates
    • H01J11/38—Dielectric or insulating layers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Gas-Filled Discharge Tubes (AREA)

Abstract

본 발명은 특히 유전층 형성방법이 개선된 플라즈마 표시소자(PDP)의 제조방법을 개시한다.The present invention particularly discloses a method of manufacturing a plasma display device (PDP) with an improved method of forming a dielectric layer.

AC형 PDP나 하이브리드형 PDP에 있어서는 전극상에 벽전압이나 캐패시터의 형성을 위해 유전층이 형성되는데 종래의 박막 또는 후막정공은 설비가 고가이거나 정도가 낮은 문제가 있었다.In the AC type PDP or the hybrid type PDP, a dielectric layer is formed on the electrode to form a wall voltage or a capacitor. However, the conventional thin film or thick film hole has a problem of expensive or low installation.

본 발명에서는 유전층이 형성될 전극을 음극으로 하여 전착에 의해 유전물질을 피착시킨뒤 소성 등을 거쳐 유전층을 형성하였다. 이에따라 미세한 피치의 균일한 유전층을 용이하게 형성할 수 있다.In the present invention, a dielectric material is deposited by electrodeposition using an electrode on which a dielectric layer is to be formed as a cathode, and then a dielectric layer is formed through firing or the like. Accordingly, it is possible to easily form a uniform dielectric layer having a fine pitch.

(제5도(나))(Fifth (b))

Description

플라즈마 표시소자의 제조방법Manufacturing Method of Plasma Display Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 AC형 PDP의 개랴적 구성을 보이는 단면도1 is a cross-sectional view showing an open configuration of an AC PDP.

제2도는 트리거형 PDP의 개략적 구성을 보이는 단면도2 is a cross-sectional view showing the schematic configuration of a triggered PDP.

제3도는 전착격벽을 가지는 종래의 DC형 PDP의 개략적 구성을 보이는 분해사시도.3 is an exploded perspective view showing a schematic configuration of a conventional DC PDP having electrodeposition bulkheads.

Claims (4)

소정의 패턴으로 형성된 전극상에 유전층을 형성하는 플라즈마 표시소자의 제조방법에 있어서, 기판상에 상기 전극을 패터닝하는 단계와, 상기 전극이 패터닝된 상기 기판을 소정의 유전물질이 전착액증에 분산된 전착조에 침지하고, 상기 전극을 음극으로 통전시켜 상기 전극상에 상기 유전물질을 선별적으로 전착시키는 단계를, 포함하는 것을 특징으로 하는 플라즈마 표시소자의 제조방법.A method of manufacturing a plasma display device for forming a dielectric layer on an electrode formed in a predetermined pattern, the method comprising: patterning the electrode on a substrate, and disposing a predetermined dielectric material on the substrate on which the electrode is patterned by electrodeposition And dipping the dielectric material on the electrode by immersing in an electrodeposition tank and energizing the electrode with a cathode. 제1항에 있어서, 상기 전착된 유전물질을 소성하여 유전층을 형성하는 단계가 더 포함되는 것을 특징으로 하는 플라지마 표시소자의 제조방법.The method of claim 1, further comprising calcining the electrodeposited dielectric material to form a dielectric layer. 제1항에 있어서, 상기 유전물질이 유리재질의 분체를 포함하는 것을 특징으로 하는 플라지마 표시소자의 제조방법.The method of claim 1, wherein the dielectric material comprises powder of glass material. 제3항에 있어서, 상기 유전물질이 세라믹 분체를 더 포함하는 것을 특징으로 하는 플라즈마 표시소자의 제조방법.The method of claim 3, wherein the dielectric material further comprises ceramic powder. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930018073A 1993-09-09 1993-09-09 Manufacture of plasma display device KR970011494B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930018073A KR970011494B1 (en) 1993-09-09 1993-09-09 Manufacture of plasma display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930018073A KR970011494B1 (en) 1993-09-09 1993-09-09 Manufacture of plasma display device

Publications (2)

Publication Number Publication Date
KR950009845A true KR950009845A (en) 1995-04-24
KR970011494B1 KR970011494B1 (en) 1997-07-11

Family

ID=19363175

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930018073A KR970011494B1 (en) 1993-09-09 1993-09-09 Manufacture of plasma display device

Country Status (1)

Country Link
KR (1) KR970011494B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6816140B2 (en) 2000-12-12 2004-11-09 Nec Corporation Displaying device and displaying method and manufacturing method of the device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6816140B2 (en) 2000-12-12 2004-11-09 Nec Corporation Displaying device and displaying method and manufacturing method of the device
KR100464114B1 (en) * 2000-12-12 2005-01-03 닛뽄덴끼 가부시끼가이샤 Displaying device and displaying method and manufacturing method of the device

Also Published As

Publication number Publication date
KR970011494B1 (en) 1997-07-11

Similar Documents

Publication Publication Date Title
ATE41396T1 (en) CONTAINER AND PROCESS FOR ITS MANUFACTURE.
KR890005769A (en) Capacitive sensitive element and manufacturing method thereof
DE68925968T2 (en) DISPLAY ARRANGEMENT
KR970003926A (en) Semiconductor integrated circuit device and manufacturing method thereof
KR920018798A (en) Method for manufacturing planar electron emitting device
KR950009845A (en) Manufacturing Method of Plasma Display Device
JPS6457594A (en) Electroluminescence element
KR970017778A (en) Trigger Plasma Display Device
KR940016762A (en) Method for manufacturing capacitor electrode of DRAM cell
KR940012476A (en) Electrode Structure of Fluorescent Display Tube
ES2115692T3 (en) PROCEDURE FOR OBTAINING A FLAT COAT CONTAINING ALUMINUM ON A SUBSTRATE WITH PERFORATED STRUCTURES ON THE SURFACE.
KR970017836A (en) AC plasma display device and electrode manufacturing method thereof
KR880006795A (en) Display panel electrode plate and manufacturing method
KR930008917A (en) Manufacturing method of bulkhead of PDP
KR910005925A (en) Electrode plate printed with conductive ink of dust collector filter for air cleaner and manufacturing method
KR960026903A (en) Manufacturing method of thin film transistor for liquid crystal display device
KR960012178A (en) Flat panel display device and manufacturing method
KR950020995A (en) Chemical vapor deposition
JPS57114293A (en) Manufacture of light emitting diode substrate
KR940016803A (en) Capacitor Formation Method of Hybrid Integrated Devices
KR930006792A (en) Cathode manufacturing method of gas discharge display device
KR920007491A (en) EL indicator
AU3800295A (en) Process for manufacturing electrical circuit bases
KR950006448A (en) Manufacturing method of cobalt oxide oxygen sensor
KR920020744A (en) Metal electrode formation method of semiconductor device

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20121019

Year of fee payment: 16

EXPY Expiration of term