KR950006640Y1 - Level sensor of overflow chemical bath - Google Patents

Level sensor of overflow chemical bath Download PDF

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Publication number
KR950006640Y1
KR950006640Y1 KR92013186U KR920013186U KR950006640Y1 KR 950006640 Y1 KR950006640 Y1 KR 950006640Y1 KR 92013186 U KR92013186 U KR 92013186U KR 920013186 U KR920013186 U KR 920013186U KR 950006640 Y1 KR950006640 Y1 KR 950006640Y1
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solution
outer cylinder
filled
inner cylinder
level
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KR92013186U
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Korean (ko)
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KR940004329U (en
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박용수
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문정환
금성일렉트론 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/048—Overflow-type cleaning, e.g. tanks in which the liquid flows over the tank in which the articles are placed

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Measurement Of Levels Of Liquids Or Fluent Solid Materials (AREA)
  • Weting (AREA)

Abstract

내용 없음.No content.

Description

오버플로우 케미칼조의 레벨 감지장치Overflow chemical level detector

제 1 도는 종래 장치를 나타낸 평면도.1 is a plan view showing a conventional apparatus.

제 2 도는 종래 장치를 나타낸 요부 종단면도.2 is a longitudinal sectional view showing main parts of a conventional apparatus.

제 3 도는 본 고안 장치를 나타낸 요부 종단면도.Figure 3 is a longitudinal cross-sectional view showing the main part device.

제 4 도는 본 고안 장치를 구성하는 테프론 튜브관에 정전용량 근접센서가 설치된 상태를 나타낸 확대도.Figure 4 is an enlarged view showing a state in which the capacitive proximity sensor is installed in the Teflon tube constituting the device of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

3 : 외통 6 : 제 1 테프론 튜브관3: outer cylinder 6: first teflon tube

6a : 제 2 테프론 튜브관 7 : 지지대6a: 2nd Teflon tube 7: support

8 : 정전용량 근접센서8: capacitive proximity sensor

본 고안은 오버플로우 케이칼조의 레벨감지 장치에 관한 것으로, 특히 용액이 공기중에 노출시 반응하여 석출되는 현상을 미연에 방지함과 함께 구조도 간단하게 할수 있도록 한 것이다.The present invention relates to a level sensor of the overflow cauljo, in particular, to prevent the phenomenon that the solution reacts when exposed to the air in advance, and to simplify the structure.

일반적으로 케미칼(Chemical)조는 하부에 배출구(1a)가 형성되고 상부 끝단 내측에는 복수개의 홈(1b)이 형성된 내통(1)과, 상기 내통에 용액을 공급하는 용액공급관(2)과, 상기 내통의 외측으로 일체형성되어 내통(1)에 채워진 용액이 흘러 넘칠 때 이용액이 채워지는 외통(3)과, 상기 외통의 하부에 형성되어 외통(3)에 채워진용액이 유출되는 유출구(4) 및 내통(1)의 일측에 형성되어 상기 유출구에서 유출된 용액이 다시 내통으로 들어가도록 하는 유입구(5)로 구성되어 있다.In general, a chemical tank has an inner cylinder 1 having a discharge port 1a formed at a lower portion thereof and a plurality of grooves 1b formed at an inner side of an upper end thereof, a solution supply pipe 2 for supplying a solution to the inner cylinder, and the inner cylinder. The outer cylinder 3 which is formed integrally with the outer side of the inner cylinder 1 and overflows when the solution filled in the inner cylinder 1 flows out, and the outlet port 4 and the inner cylinder through which the solution filled in the outer cylinder 3 flows out of the outer cylinder 3 and flows out. It is formed on one side of (1) is composed of an inlet (5) for allowing the solution outflow from the outlet to enter the inner cylinder again.

따라서 내통(1)내에 웨이퍼(Wafer)를 넣은 다음 용액공급관(2)을 통해 상기 내통(1)으로 용액을 공급하면 이용액이 점점 채워져서 결국에는 내통(1)의 상부 끝단내측에 형성된 홈(1b)에 안내를 받아 넘쳐흘러 내리고 이 넘쳐흐르는 용액은 내통(1)의 외측에 일체 형성된 외통(3)으로 점점 채워진다.Therefore, when the wafer is placed in the inner cylinder 1 and then the solution is supplied to the inner cylinder 1 through the solution supply pipe 2, the used solution is gradually filled and eventually the groove 1b formed inside the upper end of the inner cylinder 1 is formed. The overflowing solution is filled with the outer cylinder (3) integrally formed on the outside of the inner cylinder (1).

이와같이하여 내통(1)에서넘쳐흐른 용액이 외통(3)에 일정높이 이상까지 채워지면 상기 내통(1)으로의 용액공급은 중단됨과 동시에 외통(3)내에 채워진 용액은 도시하지 않은 펌프의 작동에 의해 상기 외통(3)의 하부에 형성된 유출구(4)를 통해 유출되어 내통(1)의 일측에 형성된 유입구(5)을 통해 다시 내통(1)으로 유입되는 순환싸이클을 이룬다In this way, when the solution overflowed from the inner cylinder 1 is filled to the outer cylinder 3 to a predetermined height or more, the solution supply to the inner cylinder 1 is stopped and the solution filled in the outer cylinder 3 is not used for operation of a pump (not shown). By the flow through the outlet (4) formed in the lower portion of the outer cylinder (3) forms a circulation cycle flowing back into the inner cylinder (1) through the inlet (5) formed on one side of the inner cylinder (1).

상기 용액의 순환될때 웨이퍼에 용액이 묻혀나감으로 내통(1)에서 외통(3)으로 흘러펌치는 용액량은 점점줄어들게 되고 이에 따라 상기 외통(3)에 채워진 용액이 결국에는 일정높이 이하로 떨어지므로 용액을 용액공급관(2)을 통해 다시 내통(1)으로 채우면 되는데, 이때 보충되는 용액량은 상기 내통(1)에서 흘러넘쳐 외통(3)에 일정높이 이상까지만 채울수 있는 양이면 된다.When the solution is circulated, the amount of solution flowing from the inner cylinder 1 to the outer cylinder 3 decreases as the solution is buried in the wafer, so that the solution filled in the outer cylinder 3 eventually falls below a certain height. Fill the solution back into the inner cylinder (1) through the solution supply pipe (2), wherein the amount of the solution to be filled is enough to fill the outer cylinder (3) up to a certain height or more to overflow from the inner cylinder (1).

한편, 케미칼조를 사용하지 않을때는 내통(1)의 하부에 형성된 배출구(1a)를 통해 상기 내통(1)내에 채워져 있는 용액을 모두 배출시키면 되는데, 이때에는 배출구(1a)의 하부에 설치된 밸브(도시는생략함)를 개방시킴으로 가능하다.On the other hand, when not using the chemical tank is to discharge all the solution filled in the inner cylinder 1 through the outlet (1a) formed in the lower portion of the inner cylinder (1), in this case, the valve ( City can be omitted).

이상에서 설명된 구성과 작용을 갖는 케미칼조에 있어서는 공급되는 용액이 외통에 일정높이 이상으로 채워지면 곧바로 용액의 공급을 중단시키고 외통에 채워진 용액이 일정높이 이하로 떨어지면 다시 용액을 공급시키 위하여 레벨감지장치를 갖게 된다.In the chemical tank having the structure and action described above, the supply of the solution to the outer cylinder immediately stops supplying the solution, and when the solution filled in the outer cylinder falls below a certain height, the level sensing device to supply the solution again Will have

종래에는 첨부도면 제 1 도 내지 제 2 도에 도시된 바와같이 외통(3)의 일측상단에 제1파이프(11)와 제2파이프(11a)가 설치된 레벨센서(12)를 부착하여 상기 제1, 2파이프(11)(11a)의 일측끝단은 외통(3)내로 위치시키고 타측 끝단은 레벨스위치(13)에 연결한다.Conventionally, as shown in FIGS. 1 to 2, the level sensor 12 having the first pipe 11 and the second pipe 11a installed on an upper side of the outer cylinder 3 is attached to the first pipe. One end of the two pipes (11) (11a) is located in the outer cylinder (3) and the other end is connected to the level switch (13).

상기에서 제1파이프(11)의 일측끝단은 외통(3)에 용액이 더 이상 채워지지 않아도 될 높이에 위치되도록 하고 제2파이프(11a)의 일측끝단은 외통(3)에 채워진 용액이 더 이상 떨어지지 않아도될 높이에 위치되도록 한다.In the above, one end of the first pipe 11 is positioned at a height where the solution does not need to be filled in the outer cylinder 3 any more, and one end of the second pipe 11a is no longer filled with the solution filled in the outer cylinder 3. Make sure it's at a height that won't fall.

따라서 용액공급관(2)을 통해 내통(1)내로 채워진 용액이 흘러넘쳐 외통(3)으로 채워질 때 질소유입관(14)으로는 질소가 유입되는데, 이 질소는 레벨스위치(13)를 거쳐 제1 , 2파이프(11)(11a)에 각각 안내를 받아 외통(3)으로 공급된다.Therefore, when the solution filled into the inner cylinder 1 flows through the solution supply pipe 2 and is filled with the outer cylinder 3, nitrogen is introduced into the nitrogen inlet pipe 14, which is passed through the level switch 13 to form a first nitrogen. And guided to the two pipes (11) (11a), respectively, and supplied to the outer cylinder (3).

이와같이 외통(3)에 용액이 채워짐과 함께 질소가 공급될 때 상기 용액이 어느시점에서는 제1파이프(11)의 일측 끝단과 동일선상에 오게되어 하이레벨(High Level)이 되는데, 이때에는 제1파이프(11)에 의해 외통(3)으로 공급되는 질소가 용액에 의해 저항을 받게 되고 이를 외통의 상부에 부착된 레벨선서(12)가 감지하여 더 이상의 용액 공급을 중단시킴과 함께 레벨스위치(13)을 오프시켜 제1파이프(11)로 질소를 보내지 않게 된다.As such, when the solution is filled in the outer cylinder 3 and the nitrogen is supplied, the solution is at a certain point in line with one end of the first pipe 11 to become a high level. Nitrogen supplied to the outer cylinder 3 by the pipe 11 is resisted by the solution, and the level oath 12 attached to the upper part of the outer cylinder senses this and stops supplying the solution further. ) Is turned off so that nitrogen is not sent to the first pipe 11.

또한 내통(1)과 외통(3)에 채워져 있는 용액을 순환시킬 때 용액이 웨이퍼에 묻혀나감으로 내통(1)에서 외통(3)으로 넘쳐 흐르는 용액량이 점점 적어져 결국에는 외통(3)내의 용액이 제2파이프(11a)의 일측끝단 이하로 떨어지므로 로우레벨(Low Level)이 되는데, 이때에는 제2파이프(11a)에 의해 외통(3)으로 공급되는 질소가 원활하게 공급되고 이를 외통의 상부에 부착된 레벨센서(12)가 감지하여 용액공급관(2)을 통해 용액을 다시 공급시킴과 함께 레벨스위치(13)를 온시켜 제1파이프(11)을 통해 다시 질소를 외통(3)으로 공급시킨다.In addition, when the solution filled in the inner cylinder 1 and the outer cylinder 3 is circulated, the solution is buried in the wafer, so that the amount of the solution flowing from the inner cylinder 1 to the outer cylinder 3 gradually decreases, so that the solution in the outer cylinder 3 eventually. Since it falls below one side end of the second pipe 11a, it becomes a low level. In this case, the nitrogen supplied to the outer cylinder 3 by the second pipe 11a is smoothly supplied, and this is the upper portion of the outer cylinder. The level sensor 12 attached thereto detects and supplies the solution through the solution supply pipe 2 again and turns on the level switch 13 to supply nitrogen to the outer cylinder 3 again through the first pipe 11. Let's do it.

그러나 종래 이와같은 오버플로우 케미칼조의 레벨 감지장치는 용액이 공기중에 노출시 결정으로 바뀌는 특성이 있을 경우 질소의 공급을 안내하는 제1파이프 및 제2파이프가 용액의 석출된 결정으로 막히게 되므로 외통에 채워진 용액의 하이레벨과 로우레벨 감비가 불가능함과 함께 구조가 복잡해지는 문제점이 있었다.However, such an overflow chemical tank level sensing device is filled in the outer cylinder because the first pipe and the second pipe, which guide the supply of nitrogen, are blocked by the precipitated crystal of the solution when the solution has a characteristic of changing into a crystal when the solution is exposed to air. The high level and low level reduction of the solution was impossible and the structure was complicated.

본 고안은 상기 문제점을 해결하기 위하여 안출한 것으로, 공기와 접촉시 파이프에 묻어있는 용액이 곧바로 흘러내릴수 있도록 하여 용액의 석출을 방지함과 함께 용액의 하이레벨과 로우레벨의 감지를 위해 정전용량센서를 사용하여 구조도 간단히 하는데 그 목적이 있다.The present invention was devised to solve the above problems, and the capacitive sensor for detecting the high and low levels of the solution while preventing the solution from being deposited by allowing the solution in the pipe to flow immediately when in contact with air. Its purpose is to simplify the structure.

상기 목적을 달성하기 위한 본 고안 형태에 따르면, 외통의 상단일측에 지지대를 부착하여 상기 지지대에 밀봉처리된 제1테프론 튜브관과 제2테프론 튜브관을 지지시키고 상기 제1, 2테프론 튜브관에는 외통에 채워진 용액의 레벨을 감지 할수 있도록 각각 정전용량 근접센서를 내장설치하여서 된 본 고안 오버플로우 케미칼조의 레벨 감지장치가 제공된다.According to the present invention for achieving the above object, by attaching a support to one side of the upper end of the outer cylinder to support the first teflon tube tube and the second teflon tube tube sealed on the support and the first, second teflon tube tube In order to detect the level of the solution filled in the outer cylinder, the present invention provides an overflow chemical-level level sensing device which is equipped with a capacitive proximity sensor.

이하 본 고안을 일실시예로 도시한 첨부된 도면 제 3 도 내지 제 4 도를 참고로하여 더욱 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in more detail with reference to FIGS. 3 to 4 of the accompanying drawings.

첨부도면 제 3 도는 본고안장치를 나타낸 요부 종단면도이고 제 4 도는 테프론 튜브관에 정전용량 근접센서가 설치된 상태를 나타낸 확대도로서, 본 고안은 외통(3)의 상단일측에 제1테프론 튜브관(6)과 제2테프론 튜브관(6a)이 지지된 지지대(7)를 부착하여 상기 제1, 2테프론튜브관(6)(6a)의 일측끝단은 외통(3)내부에 위치되게 함과 함께 타측 끝단은 외통(3)외부에 위치되게 하고, 상기 제1, 2테프론 튜브관(6)(6a)의 일측 끝단은 밀폐시키며, 상기 제1 , 2테프론 튜브관(6)(6a)내에는 외통(3)에 채워진 용액의 하이레벨과 로우레벨을 감지할수 있도록 각각 정전용량 근접센서(8)를 설치한다.Figure 3 is a longitudinal cross-sectional view of the main part showing the present device, and Figure 4 is an enlarged view showing the capacitive proximity sensor installed in the Teflon tube tube, the present invention is the first Teflon tube tube on the upper side of the outer tube (3) (6) and a support (7) on which the second teflon tube tube (6a) is attached so that one end of the first and second teflon tube tubes (6) (6a) is positioned inside the outer cylinder (3). The other end is located outside the outer cylinder (3), one end of the first, two teflon tube (6) (6a) is sealed, the first, two teflon tube (6) (6a) The capacitive proximity sensor 8 is installed to detect the high level and the low level of the solution filled in the outer cylinder (3), respectively.

이와같이 구성된 본 고안의 작용, 효과를 설명하면 다음과 같다.Referring to the operation, effects of the present invention configured as described above are as follows.

용액공급관(2)를 통해 내통(1)내로 용액을 채우면 이용액이 내통에 다 채워진다음 흘러넘쳐 외통(3)으로 채워지는데, 이 채워지는 용액이 지지대(7)에 지지된 제1테프론 튜브(6)내의 정전용량 감지센서(6)가 이를 감지하여 내통(1)으로서 용액공급을 중단시킨다.When the solution is filled into the inner cylinder (1) through the solution supply pipe (2), the solution is filled in the inner cylinder and then overflows to fill the outer cylinder (3), which is filled with the first teflon tube (6) supported by the support (7). The capacitive sensor 6 in) detects this and stops supplying the solution as the inner cylinder 1.

또한 용액이 웨이퍼에 묻혀나가게 되면 내통(1)에서 이통(3)으로 흘러넘치는 용액량이 줄어들어 상기 외통(3)내의 용액이 로우레벨로 떨어지는데, 이때 지지대(7)에 지지된 제2테프론 튜브(6a)내의 정전용량감지센서(8)가 이를 감지하여 하이레벨이 될 때까지 다시 용액을 공급시킨다.In addition, when the solution is buried in the wafer, the amount of solution that flows from the inner cylinder 1 to the barrel 3 decreases, so that the solution in the outer cylinder 3 falls to a low level. At this time, the second teflon tube 6a supported by the support 7 The capacitive sensor 8 in the sensing unit detects this and supplies the solution again until it reaches a high level.

상기 작용설명에서 용액이 외통(3)에 하이레벨까지 채워지거나 하이레벨까지 채워진 용액이 로우레벨로 떨어지는 과정이 반복될 때 제1, 2테프론(6)(6a)의 일측끝단이 밀폐되어 있으므로 용액은 상기 제1, 2테프론 튜브관(6)(6a)내로 들어가지 못한다.In the above description, when the solution is filled to the outer cylinder 3 to a high level or the process in which the solution filled to the high level is dropped to the low level is repeated, one end of the first and second teflons 6 and 6a is sealed. Cannot enter into the first and second Teflon tube tubes 6 and 6a.

그러므로 본 고안은 용액이 하이레벨에서 로우레벨로 떨어질 때 제1, 2테프론 튜브관에 묻어있는 용액은 곧바로 자유낙하되므로 용액이 상기 테프론 튜브에 석출되지 않고 이에 따라 장시간 사용되더라도 용액이 하이레벨 및 로우레벨의 감지가 정확히 이루어짐과 함께 정전용량 근접센서가 테프론 튜브내에 직접 설치되어있어 구조도 간편해 지는 효과가 있다.Therefore, the present invention is that when the solution falls from the high level to the low level, the solution buried in the first and second Teflon tube tubes immediately falls freely, so that the solution is not precipitated in the Teflon tube and thus the solution is high level and low even if it is used for a long time. In addition to accurate level detection, capacitive proximity sensors are installed directly in the Teflon tube, simplifying the structure.

Claims (1)

외통(3)이 상단 일측에 지지대(7)를 부착하여 상기 지지대에 일측끝판이 밀페된 제1테프론 튜브관(6)과 제2테프론 튜브관(6a)을 지지시키고 상기 제1, 2테프론 튜브관(6)(6a)에는 외통(3)에 채워진 용액의 레벨을 감지할수 있도록 각각 정전용량 근접센서(8)을 내장 설치하여서 됨을 특징으로하는 오버 플로우 케미칼조의 레벨감지장치.The outer cylinder 3 attaches the support 7 to one side of the upper end to support the first teflon tube 6 and the second teflon tube 6a in which one end plate is sealed on the support, and the first and second teflon tubes. An overflow chemical tank level sensing device, characterized in that the capacitive proximity sensor (8) is installed in each of the tubes (6) and (6a) so as to sense the level of the solution filled in the outer cylinder (3).
KR92013186U 1992-07-16 1992-07-16 Level sensor of overflow chemical bath KR950006640Y1 (en)

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