KR950006450A - Gas sensor and its manufacturing method - Google Patents

Gas sensor and its manufacturing method Download PDF

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Publication number
KR950006450A
KR950006450A KR1019930017051A KR930017051A KR950006450A KR 950006450 A KR950006450 A KR 950006450A KR 1019930017051 A KR1019930017051 A KR 1019930017051A KR 930017051 A KR930017051 A KR 930017051A KR 950006450 A KR950006450 A KR 950006450A
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KR
South Korea
Prior art keywords
gas sensor
insulating layer
heater
manufacturing
electrode
Prior art date
Application number
KR1019930017051A
Other languages
Korean (ko)
Other versions
KR960007785B1 (en
Inventor
신현우
Original Assignee
이헌조
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Priority to KR1019930017051A priority Critical patent/KR960007785B1/en
Publication of KR950006450A publication Critical patent/KR950006450A/en
Application granted granted Critical
Publication of KR960007785B1 publication Critical patent/KR960007785B1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

본 발명은 반도체 가스센서에 관한 것으로, 히터로 사용되는 물질에 따라 가스센서의 특정값이 변화되는 문제를 해결하기 위하여 기판(10)위에 제1절연층(1), 히터부(2), 제2절연층(4), 전극부(5) 및 감지막(6)이 형성되어 이루어진 기스센서에 있어서, 상기 히터부(2) 및 전극부(5)가 Ta/Pt로 이루어진 것을 특징으로 하는 가스센서를 제공한다.The present invention relates to a semiconductor gas sensor, in order to solve the problem that the specific value of the gas sensor is changed according to the material used as the heater, the first insulating layer (1), the heater unit (2), 2. A gas sensor in which an insulating layer 4, an electrode part 5, and a sensing film 6 are formed, wherein the heater part 2 and the electrode part 5 are made of Ta / Pt. Provide a sensor.

Description

가스센서 및 이의 제조방법Gas sensor and its manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에 의한 가스센서 구조도.1 is a structural diagram of a gas sensor according to the present invention.

Claims (2)

기판(10)위에 제1절연층(1), 히터부(2), 제2절연층(4), 전극부(5) 및 감지막(6)이 형성되어 이루어진 가스센서에 있어서, 상기 히터부(2) 및 전극부(5)가 Ta/Pt로 이루어진 것을 특징으로 하는 가스센서.In the gas sensor formed with a first insulating layer (1), a heater portion (2), a second insulating layer (4), an electrode portion (5) and a sensing film (6) formed on a substrate (10), the heater portion (2) and the gas sensor, characterized in that the electrode portion (5) made of Ta / Pt. 실리콘기판(10)표면에 제1절연층(1)을 형성하는 단계와, 상기 제1절연층(1)상에 Ta와 Pt를 차례로 증착하여 히터(2)를 형성하는 단계, 상기 히터(2)가 형성된 결과물 전면에 제2절연층(4)을 형성하는 단계, 상기 제2절연층(4)표면에 Ta와 Pt를 차례로 증착하여 전극(5)을 형성하는 단계, 및 상기 전극(5)이 형성된 결과물전면에 감지막(6)을 형성하는 단계로 이루어진 것을 특징으로 하는 가스센서 제조방법.Forming a first insulating layer (1) on the surface of the silicon substrate (10), depositing Ta and Pt on the first insulating layer (1) in order to form a heater (2), and the heater (2) Forming a second insulating layer 4 on the entire surface of the resulting product, depositing Ta and Pt in order on the surface of the second insulating layer 4 to form an electrode 5, and the electrode 5 Gas sensor manufacturing method comprising the step of forming a sensing film (6) on the formed front surface. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930017051A 1993-08-30 1993-08-30 Gas sensor KR960007785B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930017051A KR960007785B1 (en) 1993-08-30 1993-08-30 Gas sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930017051A KR960007785B1 (en) 1993-08-30 1993-08-30 Gas sensor

Publications (2)

Publication Number Publication Date
KR950006450A true KR950006450A (en) 1995-03-21
KR960007785B1 KR960007785B1 (en) 1996-06-12

Family

ID=19362320

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930017051A KR960007785B1 (en) 1993-08-30 1993-08-30 Gas sensor

Country Status (1)

Country Link
KR (1) KR960007785B1 (en)

Also Published As

Publication number Publication date
KR960007785B1 (en) 1996-06-12

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