KR950005098Y1 - Table of lpcvd - Google Patents
Table of lpcvd Download PDFInfo
- Publication number
- KR950005098Y1 KR950005098Y1 KR2019910014928U KR910014928U KR950005098Y1 KR 950005098 Y1 KR950005098 Y1 KR 950005098Y1 KR 2019910014928 U KR2019910014928 U KR 2019910014928U KR 910014928 U KR910014928 U KR 910014928U KR 950005098 Y1 KR950005098 Y1 KR 950005098Y1
- Authority
- KR
- South Korea
- Prior art keywords
- cylinder
- baffle plate
- holes
- quartz
- side wall
- Prior art date
Links
- 239000007789 gas Substances 0.000 claims description 11
- 238000009413 insulation Methods 0.000 claims description 11
- 239000010453 quartz Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 239000012495 reaction gas Substances 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 239000003245 coal Substances 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 11
- 239000002245 particle Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
내용 없음.No content.
Description
제 1 도는 종래의 단열 테이블.1 is a conventional insulation table.
제 2 도는 a는 본 고안의 단열 테이블의 개략적인 사시도, b 도는 본 고안의 단열 테이블의 평면도, c는 본 고안의 단열 테이블 X-Y선 단면도, d는 본 고안의 단열 테이블의 저면도.2 is a schematic perspective view of the insulation table of the present invention, b is a plan view of the insulation table of the present invention, c is a cross-sectional view of the insulation table X-Y line of the present invention, d is a bottom view of the insulation table of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
2 : 테이블 3 : 삽입형 배플플레이트2: Table 3: Insertion Type Baffle Plate
20 : 실리더형 테이블 21 : 고정형 베플플레이트20: cylinder type table 21: fixed baffle plate
27 : 하부구멍 28 : 상부구멍27: lower hole 28: upper hole
본 고안은 종형 저압화학기상증착(CVD)설비의 단열 테이블에 관한 것이며, 특히 웨이퍼의 유니포미티(Uniformity)와 파티클(Particle)발생등의 특성을 개선시킨 테이블에 관한 것이다.The present invention relates to an adiabatic table of a vertical low pressure chemical vapor deposition (CVD) facility, and more particularly to a table that improves the characteristics of wafer wafer uniformity and particle generation.
고온에서 산화막을 형성시키는 장비(HTO장비)에서는 챔버 내에 웨이퍼의 지지를 위해 제 1 도에 개략적으로 도시한 바와 같은 웨이퍼보트(1)와 이를 지지하는 테이블(2)이 형성되고 도시하지는 않았지만 반응개스 공급부가 형성되어 반응개스를 공급하게 된다. 이 테이블(2)에는 석영으로 제작된 다수의 배플플레이트(3) (Baffle Plate)가 테이블 슬롯(4)들에 꽂히게 되는데, 그 역할은 유입된 반응 개스가 반응부(Wafer Boat)까지 가는 동안 개스(O2, SiH4)가 적절한 비율로 프리믹스(Pre-Mix)되고 안정된 증착(퇴적 : Deposition)이 될 수 있도록 반응부(Wafer Boat)와 비반응부(Baffle Plate)를 열적으로 단열(Isolation)시켜, 개스(O2, SiH4)가 서로 반응하여 SiO2를 형성시키고, 이 SiO2가 호모제니어스리액션(Homogeneous Reaction)이 일어나는 것을 방지하는 것이다.In an apparatus for forming an oxide film at a high temperature (HTO equipment), a wafer boat 1 and a table 2 for supporting the wafer, as schematically shown in FIG. A supply unit is formed to supply the reaction gas. In this table (2), a number of baffle plates (3) made of quartz are inserted into the table slots (4), the role of which is while the introduced reaction gas goes to the Wafer Boat. Thermal insulation of the Wafer Boat and the Baffle Plate so that the gases (O 2 , SiH 4 ) can be pre-mixed and deposited in a suitable ratio. ), The gases (O 2 , SiH 4 ) react with each other to form SiO 2 , and this SiO 2 prevents homogenous reaction from occurring.
그러나 이러한 종래의 테이블은 웨이퍼보오트와 개스 유입 통로 사이를 충분히 단열시키지 못하여, 지역적인 온도불균형에 의해, 보오트 하단의 반도체 웨이퍼에 호모제니어스리액션을 통한 파티클이 발생하고, 또한 적절한 웨이퍼간의 균일도를 얻기 위해 히터에 지역적으로 다른 온도 바이아스를 주어야 한다.However, such a conventional table is not sufficiently insulated between the wafer boat and the gas inlet passage, and due to local temperature imbalance, particles are generated through homogenous reactions on the semiconductor wafer at the bottom of the boat, and also appropriate wafer uniformity is achieved. In order to obtain the heater, a different temperature bias must be applied to the heater.
본 고안은 단열효과를 개선하고 웨이퍼의 유니포미터를 향상시키며 파티클 발생을 감소시키기 위한 것으로 제 2 도에 그 개략도가 도시되어 있다.The present invention is shown in FIG. 2 to improve the thermal insulation effect, improve the wafer's uniformer and reduce particle generation.
본 고안의 테이블은 캔 모양으로 석영실린더(20)와 이 실린더에 고정된 석영 배플플레이트(21)들로 구성시킨다.The table of the present invention is composed of a quartz cylinder 20 and a quartz baffle plate 21 fixed to the cylinder in a can shape.
이 실린더형 테이블 상부(22)에는 웨이퍼보트를 결합시킬 수 있도록 가이드 구멍(23)들이 형성되어 있고, 실린더 하부(24)에는 반응챔버의 도어(Door)에 결합시키기 위한 구멍(25)들이 형성되어 있다.The cylindrical table top 22 has guide holes 23 formed therein for joining the wafer boat, and the lower cylinder 24 has holes 25 formed therein for engaging the door of the reaction chamber. have.
또 배플플레이트는 5장정도 설치하는 것이 적당한데, 이 배플플레이트는 실린더 내측벽에 고정시키며 실린더(20)의 단면적 보다 작게 형성되고 걸고리 형태의 배플플레이트 지지부(26)에 의해 고정되면 된다. 그리고 실린더 측벽의 상하부에는 양쪽에 각 4개의 개스 유통 구멍(27,28)이 뚫여 있다.The baffle plate may be installed at about five sheets. The baffle plate may be fixed to the inner wall of the cylinder, and may be smaller than the cross-sectional area of the cylinder 20 and may be fixed by a hook-shaped baffle plate support 26. Four gas flow holes 27 and 28 are drilled in the upper and lower portions of the cylinder side wall, respectively.
이렇게 구성된 테이블에 하부로부터 반응개스(예로 O2, SiH4)가 유입되면, 실린더 하부 측면의 구멍(27)을 관통하여 실린더 내부에 유입되고, 유입된 개스가 배플플레이트(21)와 실린더 내측벽 사이를 통하면서 충분히 믹서되고 석영실린더에 의해 히터의 열이 단열된 상태로 실린더 상부의 구멍(28)을 통하여 실제 반응을 일으켜야 할 웨이퍼 보트 쪽으로 흘러가게 되는데, 실린더의 상하부에 형성된 각 개스 유통구멍(27,28)으로 개스가 통과할 시에 와류현상에 의해 적절한 프리믹스를 얻을 수 있다.When the reaction gas (for example, O 2 , SiH 4 ) flows into the table configured as described above, the reaction gas flows into the cylinder through the hole 27 in the lower side of the cylinder, and the introduced gas flows into the baffle plate 21 and the cylinder inner wall. The gas flows through the hole 28 at the top of the cylinder to the wafer boat to be subjected to the actual reaction while the mixer is sufficiently mixed and the heat of the heater is insulated by the quartz cylinder. 27, 28), when the gas passes, an appropriate premix can be obtained by vortex phenomena.
본 고안의 테이블에 의하면 종래의 장치가 배플플레이트에 의해서만 단열효과를 얻던 것과는 달리, 측면까지 석영 실린더로 차단시킴으로써 단열효과를 극대화시키고, 개스는 실린더 측벽에 형성된 개스 유통구멍을 통하여 유통되도록 하므로 와류현상에 의해 적절한 프리믹스를 얻을 수 있어, 종래 지역적인 온도불균형에 의해 발생되던 호모제니어스리액션에 의한 파티클을 억제할 수 있고 히터에 지역적으로 다른 온도 바이아스를 주지 않아도 웨이퍼의 균일도를 얻을 수 있다.According to the table of the present invention, the conventional device maximizes the heat insulation effect by blocking the quartz cylinder to the side surface, unlike the conventional device which obtains the heat insulation effect only by the baffle plate, and the gas flows through the gas flow hole formed in the side wall of the cylinder, which is a vortex phenomenon. It is possible to obtain an appropriate premix, to suppress particles caused by homogenous reactions caused by local temperature imbalance in the related art, and to obtain uniformity of wafers without applying different temperature vias to the heater.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019910014928U KR950005098Y1 (en) | 1991-09-13 | 1991-09-13 | Table of lpcvd |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019910014928U KR950005098Y1 (en) | 1991-09-13 | 1991-09-13 | Table of lpcvd |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR930007515U KR930007515U (en) | 1993-04-26 |
| KR950005098Y1 true KR950005098Y1 (en) | 1995-06-22 |
Family
ID=19319237
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019910014928U KR950005098Y1 (en) | 1991-09-13 | 1991-09-13 | Table of lpcvd |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR950005098Y1 (en) |
-
1991
- 1991-09-13 KR KR2019910014928U patent/KR950005098Y1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR930007515U (en) | 1993-04-26 |
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