KR940026970A - Method for controlling electrically erasable nonvolatile memory and device therefor - Google Patents

Method for controlling electrically erasable nonvolatile memory and device therefor Download PDF

Info

Publication number
KR940026970A
KR940026970A KR1019940010822A KR19940010822A KR940026970A KR 940026970 A KR940026970 A KR 940026970A KR 1019940010822 A KR1019940010822 A KR 1019940010822A KR 19940010822 A KR19940010822 A KR 19940010822A KR 940026970 A KR940026970 A KR 940026970A
Authority
KR
South Korea
Prior art keywords
management information
block
nonvolatile memory
data
control method
Prior art date
Application number
KR1019940010822A
Other languages
Korean (ko)
Other versions
KR970010238B1 (en
Inventor
히로유끼 야마모또
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Publication of KR940026970A publication Critical patent/KR940026970A/en
Application granted granted Critical
Publication of KR970010238B1 publication Critical patent/KR970010238B1/en

Links

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • G06F12/0223User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023Free address space management
    • G06F12/0238Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory

Abstract

전기적으로 소거가능한 불휘발성메모리가 한쪽으로 치우친 개서을 없애서 메모리 상태의 저하를 방지함과 함께, 예비전원장치나 전압감시장치와 같은 부가를 없애고, FAT, 논리어드레스 또는 개서 혹은 소거수의 보존을 확실 보정할 수 있는 메모리의 제조방법 및 그 시스템을 제공한다.Electrically erasable nonvolatile memory eliminates one-sided rewriting, avoids deterioration of memory status, eliminates the addition of redundant power supplies, voltage monitors, and reliably corrects storage of FATs, logical addresses, or rewritings Provided are a method of manufacturing a memory, and a system thereof.

전기적으로 소거가능한 불휘발성메모리의 제어방법으로써, 상기 불휘발성메모리 10을 소거단위로 복수의 블럭으로 나누어, 각 블럭을 관리하는 정보를 기억하는 영역 13을 동일한 블럭내에 설치한다. 전기적으로 소거가능한 불휘발성메모리를 포함하는 시스템에 있어서, 상기 불휘발성메모리 10의 소거단위로 분할된 각블럭내에서, 해당 블럭을 관리하는 관리정보를 기억하는 기억영역 13과, 시스템 동작시에 상기 가 블럭에 각각 설치된 상기 기억영역내의 정보를 판독하고, 상기 불휘발성메모리를 관리하는 시스템의 관리정보를 작성하는 관리정보작성수단 S31, S32와, 작성된 상기 관리정보를 기억하는 휘발성메모리 20을 구비한다.As a control method of an electrically erasable nonvolatile memory, the nonvolatile memory 10 is divided into a plurality of blocks in an erase unit, and an area 13 for storing information for managing each block is provided in the same block. A system including an electrically erasable nonvolatile memory, comprising: a storage area 13 for storing management information for managing a corresponding block in each block divided into erase units of the nonvolatile memory 10; Management information creating means S31, S32 for reading information in the storage area respectively provided in the block, and creating management information of a system for managing the nonvolatile memory, and volatile memory 20 for storing the created management information. .

Description

전기적으로 소거가능한 불휘발성 메모리의 제어방법 및 그 장치Method for controlling electrically erasable nonvolatile memory and device therefor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 실시예의 플래쉬메모리 및 SRAM의 구성을 도시하는 도이다. 제3도는 제2도의 시스템 동작시의 제어순서의 일 실시예를 도시하는 플로우 차트이다.2 is a diagram showing the configuration of the flash memory and the SRAM of this embodiment. FIG. 3 is a flow chart showing an embodiment of the control procedure in the system operation of FIG.

Claims (8)

전기적으로 소거가능한 불휘발성메모리의 제어방법에 있어서, 상기 불휘발성메모리를 소거단위로 복수의 블럭으로 나누고, 각 블럭을 관리하는 정보를 기억하는 영역을 동일한 블럭내에 설치함을 특징으로 하는 제어 방법.A control method of an electrically erasable nonvolatile memory, comprising: dividing the nonvolatile memory into a plurality of blocks in an erase unit, and providing an area for storing information for managing each block in the same block. 제1항에 있어서, 상기 제어방법은, 시스템 동작시에, 상기 블럭에 각각 설치된 상기 영역내의 정보를 판독하고, 상기 불휘발성메모리를 관리하는 시스템의 관리정보를 작성함을 특징으로 하는 제어 방법.2. The control method according to claim 1, wherein the control method reads information in the areas provided in the blocks, respectively, and creates management information of a system managing the nonvolatile memory during system operation. 제1항에 있어서, 상기 제어방법은, 상기 블럭으로 데이타가 기록될 경우에, 일실시에 데이타와 상기 관리정보와의 기록을 행함을 특징으로 하는 제어 방법.The control method according to claim 1, wherein when the data is recorded in the block, the control method records data and the management information in one embodiment. 제3항에 있어서, 상기 제어방법은, 상기 블럭에 데이타가 기록될 경우에, 데이타와 상기 관리정보와의 기록과 동시에 상기 시스템의 관리정보의 갱신을 행함을 특징으로 하는 방법.4. The method according to claim 3, wherein when the data is recorded in the block, the control method updates management information of the system simultaneously with recording of data and the management information. 제2항에 있어서, 상기 제어방법은, 상기 블럭으로 부터의 데이타를 독출할 경우에, 상기 시스템의 관리정보를 참조함을 특징으로 하는 방법.The method as claimed in claim 2, wherein the control method refers to management information of the system when reading data from the block. 전기적으로 소거가능한 불휘발성메모리를 포함하는 데이타 저장장치에 있어서, 상기 불휘발성메모리를 소거단위로 분할된 각 블럭내에서, 해당 블럭을 관리하는 관리정보를 기억하는 기억영역과, 시스템의 동작시에, 상기 각 블럭에 각각 설치된 상기 기억영역내의 정보를 판독하고, 상기 불휘발성메모리를 관리하는 시스템의 관리정보를 작성하는 관리정보작성수단과, 작성된 상기 관리정보를 기억하는 휘발성메모리를 구비함을 특징으로 하는 데이타 저장장치.A data storage device comprising an electrically erasable nonvolatile memory, comprising: a storage area for storing management information for managing the block in each block divided into erase units, and at the time of operation of the system And management information creating means for reading information in the storage area provided in each of the blocks, and for creating management information of a system for managing the nonvolatile memory, and a volatile memory for storing the created management information. Data storage. 제6항에 있어서, 상기 데이타 저장장치가, 상기 블럭으로 데이타가 기록될 경우에, 일시에 데이타와 상기 관리정보와의 기록을 행하고, 동시에 상기 시스템의 관리정보의 갱신을 행하는 기록제어수단을 더 구비함을 특징으로 하는 데이타 저장장치.7. The data storage apparatus according to claim 6, further comprising recording control means for recording data and management information at a time and updating management information of said system, when said data storage device records data in said block. Data storage device characterized in that provided. 제6항 또는 제7항에 있어서, 상기 데이타 저장장치가, 상기 블럭으로부터 데이타가 독출될 경우에, 상기 시스템의 관리정보를 참조하는 독출제어수단을 더 구비함을 특징으로 하는 데이타 저장장치.8. The data storage device according to claim 6 or 7, wherein the data storage device further includes read control means for referring to management information of the system when data is read from the block. ※ 참고사항: 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the original application.
KR94010822A 1993-05-18 1994-05-17 Electrically erasable nonvolatile memory controlling method and system therefor KR970010238B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11615893A JPH06332795A (en) 1993-05-18 1993-05-18 Electrically erasable nonvolatile memory controlling method and system therefor
JP93-116158 1993-05-18

Publications (2)

Publication Number Publication Date
KR940026970A true KR940026970A (en) 1994-12-10
KR970010238B1 KR970010238B1 (en) 1997-06-23

Family

ID=14680216

Family Applications (1)

Application Number Title Priority Date Filing Date
KR94010822A KR970010238B1 (en) 1993-05-18 1994-05-17 Electrically erasable nonvolatile memory controlling method and system therefor

Country Status (2)

Country Link
JP (1) JPH06332795A (en)
KR (1) KR970010238B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100757128B1 (en) * 2005-07-01 2007-09-10 가부시끼가이샤 도시바 Memory card using flash memory and controlling method thereof

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6195217B1 (en) * 1995-03-06 2001-02-27 Hyundai Electronics Industries Co., Ltd. Hard disk equipped with a memory for storing file allocation table (FAT) information
US5835935A (en) * 1995-09-13 1998-11-10 Lexar Media, Inc. Method of and architecture for controlling system data with automatic wear leveling in a semiconductor non-volatile mass storage memory
JPH0997199A (en) * 1995-09-28 1997-04-08 Canon Inc Method and device for flash rom management and computer controller
KR100445134B1 (en) * 2002-01-31 2004-08-21 삼성전자주식회사 Host equipped with stabilizing function for flash memory and the method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100757128B1 (en) * 2005-07-01 2007-09-10 가부시끼가이샤 도시바 Memory card using flash memory and controlling method thereof

Also Published As

Publication number Publication date
JPH06332795A (en) 1994-12-02
KR970010238B1 (en) 1997-06-23

Similar Documents

Publication Publication Date Title
CN100388235C (en) Memory device and recording/reproducing appts. using same
KR970076215A (en) Nonvolatile semiconductor memory
KR930020469A (en) Nonvolatile Semiconductor Memory Device
US20080082773A1 (en) Systems for Managing File Allocation Table Information
JP2006294061A (en) Memory management
AU4061700A (en) Space management for managing high capacity nonvolatile memory
KR940022572A (en) Bulk Erasable Nonvolatile Memory
KR960019248A (en) Method and apparatus for managing data recording medium and data recording medium thereof
JPH05198198A (en) Semiconductor storage device
JP2003257132A (en) File management of one-time-programmable nonvolatile memory devices
KR890016567A (en) Information storage method and device
US5442768A (en) Recording and reproducing data using batch erasable nonvolatile semiconductor memories capable of selectively erasing one of a plurality of data groups stored in one of the memories
KR910012930A (en) External memory device and its replacement method
KR970060292A (en) Storage and facsimile devices using it
KR940026970A (en) Method for controlling electrically erasable nonvolatile memory and device therefor
KR970076268A (en) Data backup system using nonvolatile record / read memory
JPH0695955A (en) Flash file system
JPH0675836A (en) Auxiliary storage device
US7032094B2 (en) Method of controlling flash memory
KR101102754B1 (en) Nand flash memory file system and method for accessing file thereof
JPS6045994A (en) Information storing method by prom
CA2152204A1 (en) Method of transferring data to a memory medium in a mailing machine
DE59801598D1 (en) METHOD FOR SECURELY CHANGING A VALUE STORED IN A NON-VOLATILE STORAGE AND CIRCUIT ARRANGEMENT THEREFOR
JP3593622B2 (en) Non-volatile memory data rewriting method
JPH10188584A (en) Memory control device

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20110830

Year of fee payment: 15

FPAY Annual fee payment

Payment date: 20120831

Year of fee payment: 16

LAPS Lapse due to unpaid annual fee