KR940022735A - Substrate drying method and substrate drying apparatus - Google Patents

Substrate drying method and substrate drying apparatus Download PDF

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Publication number
KR940022735A
KR940022735A KR1019940005195A KR19940005195A KR940022735A KR 940022735 A KR940022735 A KR 940022735A KR 1019940005195 A KR1019940005195 A KR 1019940005195A KR 19940005195 A KR19940005195 A KR 19940005195A KR 940022735 A KR940022735 A KR 940022735A
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KR
South Korea
Prior art keywords
outer tank
tank
drying method
vacuum drying
wafer
Prior art date
Application number
KR1019940005195A
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Korean (ko)
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KR0146259B1 (en
Inventor
유이치 미요시
미치카즈 마쯔모토
요시타카 단수이
테루히토 오오니시
유이치 히로후지
Original Assignee
모리시타 요이찌
마쯔시다덴기산교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 모리시타 요이찌, 마쯔시다덴기산교 가부시끼가이샤 filed Critical 모리시타 요이찌
Publication of KR940022735A publication Critical patent/KR940022735A/en
Application granted granted Critical
Publication of KR0146259B1 publication Critical patent/KR0146259B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)

Abstract

본 발명은, 기판세정후에 행하는 진공건조방법 및 진공건조장치에 있어서, 미립자 부착을 방지하는 것을 목적으로 한 것이며, 그 구성에 있어서, 본 발명의 건조방법은, 순수의 배수 a를 행한후, 건조장치 내부를 감압하는 f까지 사이에, 대기압하에서 대기한다고 하는 물빼기수단 e를 행하는 것을 특징으로 한 것이다.The present invention aims to prevent particulate matter from adhering to a vacuum drying method and a vacuum drying apparatus carried out after washing a substrate. In the configuration, the drying method of the present invention is carried out after draining a pure water, followed by drying. It is characterized in that the water draining means e is said to be waited under atmospheric pressure between f to depressurize the inside of the apparatus.

Description

기판 건조방법 및 기판 건조장치Substrate drying method and substrate drying apparatus

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 제1실시예에 있어서의 진공건조방법을 표시한 순서도.1 is a flowchart showing a vacuum drying method according to the first embodiment of the present invention.

제2도는 본 발명의 제2실시예에 있어서의 진공건조장치의 개요를 표시한 단면도.2 is a sectional view showing an outline of a vacuum drying apparatus according to a second embodiment of the present invention.

Claims (6)

외부탱크의 덮개를 열고, 내부탱크에 가열한 순수를 채우는 준비공정, 내부탱크에 가열한 순수를 공급하면서 웨이퍼를 내부탱크에 삽입하고 외부탱크의 덮개를 닫는 삽입공정, 내부탱크 내부의 순수를 배출하는 배액공정, 물빼기를 행하는 물빼기공정, 외부탱크 내부를 감압하는 감압공정, 외부탱크 내부에 불활성 가스를 도입하고, 외부탱크 내부의 기압을 대기압과 동등하게 하는 퍼어즈공정, 외부탱크의 덮개를 열고 웨이퍼를 꺼내는 인출공정을 포함하는 것을 특징으로 하는 진공건조방법.Preparation process to open the outer tank cover, fill the inner tank with heated pure water, insert the wafer into the inner tank while supplying the heated pure water to the inner tank, close the cover of the outer tank, discharge the pure water inside the inner tank Drainage process, draining process to drain water, depressurization process to depressurize the inside of the outer tank, purge process to introduce an inert gas into the outer tank and equalize the atmospheric pressure inside the outer tank to the atmospheric pressure and cover the outer tank A vacuum drying method comprising a withdrawal step of opening the wafer and removing the wafer. 제1항에 있어서, 물빼기공정이 10초 이상의 대기로 이루어진 것을 특징으로 하는 진공건조방법.The vacuum drying method according to claim 1, wherein the water draining step is performed for 10 seconds or more. 제1항에 있어서, 물빼기공정이 외부탱크 위로 향하는 가속도를 부여하므로서 이루어진 것을 특징으로 하는 진공건조방법.The vacuum drying method according to claim 1, wherein the water draining step is performed by imparting an acceleration toward the outer tank. 제1항에 있어서, 웨이퍼가 소수성 실리콘인 것을 특징으로 하는 진공건조방법.The vacuum drying method according to claim 1, wherein the wafer is hydrophobic silicon. 제1항에 있어서, 웨이퍼가 소수성 실리콘과 친수성 실리콘을 가진 것을 특징으로 하는 진공건조방법.The vacuum drying method according to claim 1, wherein the wafer has hydrophobic silicon and hydrophilic silicon. 외부탱크와, 상기 외부탱크에 둘러싸인 내부탱크를 구비하고, 상기 외부탱크에는 윗면에 웨이퍼를 출납하기 위한 덮개와, 바닥면에 상기 내부탱크로부터 넘쳐 흘러나온 치환용액을 배액하기 위한 배수관을 가지고, 상기 덮개를 닫으므로서 내부가 밀폐되는 구조를 하고 있으며, 상기 내부탱크에는 상기 바닥면에 치환용액을 공급·배액하기 위한 급배수관과, 내부바닥면 부근에 물빼기 부재를 가지고, 윗면이 개방되어 있는 구조를 하고 있으며, 상기 물빼기 부재는, 상기 내부탱크 내부에 기판을 얹어 놓았을 때에 상기 기판하부와 접촉하는 구조인 것을 특징으로 하는 진공건조장치.An outer tank, an inner tank surrounded by the outer tank, the outer tank having a cover for discharging wafers on an upper surface thereof, and a drain pipe for discharging a displacement solution overflowed from the inner tank on a bottom surface thereof; The inside of the container is closed while the cover is closed, and the inner tank has a water supply and drain pipe for supplying and draining the replacement solution to the bottom surface, and a draining member near the inner bottom surface, and the top surface is open. And the water draining member is in contact with the lower portion of the substrate when the substrate is placed inside the inner tank. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940005195A 1993-03-17 1994-03-16 Method and apparatus for vacuum drying KR0146259B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP93-56682 1993-03-17
JP5668293 1993-03-17

Publications (2)

Publication Number Publication Date
KR940022735A true KR940022735A (en) 1994-10-21
KR0146259B1 KR0146259B1 (en) 1998-11-02

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KR1019940005195A KR0146259B1 (en) 1993-03-17 1994-03-16 Method and apparatus for vacuum drying

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116638357A (en) * 2023-07-27 2023-08-25 烟台东星集团有限公司 Clamping device for machining integrated forging oil cylinder shaft

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116638357A (en) * 2023-07-27 2023-08-25 烟台东星集团有限公司 Clamping device for machining integrated forging oil cylinder shaft
CN116638357B (en) * 2023-07-27 2023-10-03 烟台东星集团有限公司 Clamping device for machining integrated forging oil cylinder shaft

Also Published As

Publication number Publication date
KR0146259B1 (en) 1998-11-02

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