KR940021286U - Bit line sensing circuit - Google Patents

Bit line sensing circuit

Info

Publication number
KR940021286U
KR940021286U KR2019930002642U KR930002642U KR940021286U KR 940021286 U KR940021286 U KR 940021286U KR 2019930002642 U KR2019930002642 U KR 2019930002642U KR 930002642 U KR930002642 U KR 930002642U KR 940021286 U KR940021286 U KR 940021286U
Authority
KR
South Korea
Prior art keywords
bit line
sensing circuit
line sensing
circuit
bit
Prior art date
Application number
KR2019930002642U
Other languages
Korean (ko)
Other versions
KR950004751Y1 (en
Inventor
김태형
Original Assignee
엘지일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지일렉트론 주식회사 filed Critical 엘지일렉트론 주식회사
Priority to KR2019930002642U priority Critical patent/KR950004751Y1/en
Publication of KR940021286U publication Critical patent/KR940021286U/en
Application granted granted Critical
Publication of KR950004751Y1 publication Critical patent/KR950004751Y1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
KR2019930002642U 1993-02-25 1993-02-25 Bit-line sensing circuit KR950004751Y1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019930002642U KR950004751Y1 (en) 1993-02-25 1993-02-25 Bit-line sensing circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019930002642U KR950004751Y1 (en) 1993-02-25 1993-02-25 Bit-line sensing circuit

Publications (2)

Publication Number Publication Date
KR940021286U true KR940021286U (en) 1994-09-24
KR950004751Y1 KR950004751Y1 (en) 1995-06-14

Family

ID=19351212

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019930002642U KR950004751Y1 (en) 1993-02-25 1993-02-25 Bit-line sensing circuit

Country Status (1)

Country Link
KR (1) KR950004751Y1 (en)

Also Published As

Publication number Publication date
KR950004751Y1 (en) 1995-06-14

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