KR940012044A - Photosensitive material - Google Patents

Photosensitive material Download PDF

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KR940012044A
KR940012044A KR1019930025310A KR930025310A KR940012044A KR 940012044 A KR940012044 A KR 940012044A KR 1019930025310 A KR1019930025310 A KR 1019930025310A KR 930025310 A KR930025310 A KR 930025310A KR 940012044 A KR940012044 A KR 940012044A
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South Korea
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photosensitive material
group
fullerene
photosensitive
amount
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KR1019930025310A
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Korean (ko)
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노부오 아오키
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오오자와 히데지로오
니뽕세키유 가부시기가이샤
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Publication of KR940012044A publication Critical patent/KR940012044A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C211/00—Compounds containing amino groups bound to a carbon skeleton
    • C07C211/01—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to acyclic carbon atoms
    • C07C211/02—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C211/03—Monoamines
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C233/00—Carboxylic acid amides
    • C07C233/01—Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms
    • C07C233/02—Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms having nitrogen atoms of carboxamide groups bound to hydrogen atoms or to carbon atoms of unsubstituted hydrocarbon radicals
    • C07C233/09—Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms having nitrogen atoms of carboxamide groups bound to hydrogen atoms or to carbon atoms of unsubstituted hydrocarbon radicals with carbon atoms of carboxamide groups bound to carbon atoms of an acyclic unsaturated carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
    • C08K5/0041—Optical brightening agents, organic pigments
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/01—Hydrocarbons
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings

Abstract

본 발명의 감광제는 플러렌에 감광기를 첨가하거나 및/또는 가광제에 플러렌을 혼합함으로써 얻어지느 감광제로써, 플러렌을 함유하는 감광기로 이루어진 것을 특징으로 한다. 본 발명에 의한 감광제는 자외선, 원자외선, X선, 전자선등을 광원으로 사용하는 반도체소자체조용 포도리소그래피 레지스트로써 호적한 감광재료이며 고해상도화와 고감도화의 실현에 뛰어난 새로운 레지스트를 제공하는 것이다.The photosensitive agent of this invention is a photosensitive agent obtained by adding a photosensitive group to fullerene and / or mixing fullerene with a photosensitive agent, It is characterized by consisting of the photosensitive group containing a fullerene. The photosensitizer according to the present invention is a photolithography material suitable for semiconductor device fabrication using ultraviolet light, ultraviolet light, X-ray, electron beam, etc. as a light source, and provides a new resist excellent in realizing high resolution and high sensitivity.

Description

감광재료Photosensitive material

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

Claims (32)

적어도 하나의 감광기를 함유한 플러렌으로 이루어진 것을 특징으로 하는 감광재료.A photosensitive material comprising a fullerene containing at least one photoreceptor. 제1항에 있어서, 상기 플러렌은 감광기를 첨가함으로서 얻어지는 것을 특징으로 하는 감광재료.The photosensitive material as claimed in claim 1, wherein the fullerene is obtained by adding a photosensitive device. 제1항에 있어서, 상기 플러렌은 감광제와 함께 혼합함으로서 얻어지는 것을 특징으로 하는 감광재료.The photosensitive material as claimed in claim 1, wherein the fullerene is obtained by mixing with a photosensitive agent. 제1항 내지 제3항의 어느 한 항에 있어서, 상기 플러렌은 C60, C70, C76, C82, C84, C90 및 C96으로 이루어진 그룹에서 선택된 적어도 하나인 것을 특징으로 하는 감광재료.The photosensitive material according to any one of claims 1 to 3, wherein the fullerene is at least one selected from the group consisting of C60, C70, C76, C82, C84, C90 and C96. 제4항에 있어서, 상기 플러렌은 C60 및 C70으로 이루어진 그룹에서 선택된 적어도 하나인 것을 특징으로 하는 감광재료.5. The photosensitive material as claimed in claim 4, wherein the fullerene is at least one selected from the group consisting of C60 and C70. 제5항에 있어서, 상기 플러렌은 C60인 것을 특징으로 하는 감광재료.6. The photosensitive material as claimed in claim 5, wherein the fullerene is C60. 제1항 내지 3항중 어느 한항에 있어서, 상기 플러렌은 카본 클러스터에의 알킬기부가물, 카본클러스터에의 알킬기부가를 및 카본믈러스터에의 할로겐 원가부가물로 이루어진 그룹에서 선택된 적어도 하나 이상인 것을 특징으로 하는감광재료.4. The fullerene according to any one of claims 1 to 3, wherein the fullerene is at least one selected from the group consisting of an alkyl base adduct to a carbon cluster, an alkyl base adduct to a carbon cluster and a halogen adduct to a carbon cluster. Photosensitive material. 제7항에 있어서, 상기 플러레온 카본클러스터에의 알킬아민부가물 및 카본클러스터에의 알킬기 부가물로 이루어진 그룹에서 선택된 적어도 하나이상인 것을 특징으로 하는 감광재료.8. The photosensitive material as claimed in claim 7, wherein the photosensitive material is at least one selected from the group consisting of an alkylamine adduct to the fullerene carbon cluster and an alkyl group adduct to the carbon cluster. 제8항에 있어서, 상기 플러렌은 카본클러스터에의 알킬아민부가물인 것을 특징으로 하는 감광재료.9. The photosensitive material as claimed in claim 8, wherein the fullerene is an alkylamine adduct to the carbon cluster. 제7항 내지 제9항중 어느 한 항에 있어서, 상기 알킬아민은 1급아민, 2급아민 및 3급아민으로 이루어진 그룹중에서 선택된 하나 이상인 것을 특징으로 하는 감광재료.10. The photosensitive material as claimed in any one of claims 7 to 9, wherein the alkylamine is at least one selected from the group consisting of primary amine, secondary amine and tertiary amine. 제10항에 있어서, 상기 알킬아민은 1급아민에서 선택된 적어도 하나인 것을 특징으로 하는 감광재료.The photosensitive material as claimed in claim 10, wherein the alkylamine is at least one selected from primary amines. 제11항에 있어서, 상기 알킬아민의 알킬기는 1 내지 24탄소원자를 가지 S알킬기인 것을 특징으로 하는 감광재료.The photosensitive material as claimed in claim 11, wherein the alkyl group of the alkylamine is an Salkyl group having 1 to 24 carbon atoms. 제12항에 있어서, 상기 알킬아민은 에틸아민, n-프로필아민, n-부틸아민, ,t-부틸아민, n-헥실아민, 2-에틸헥실아민, n-도데실아민 및 아닐린을 함유하는 기에서 선택된 적어도 하나인 것을 특징으로 하는 감광재료.13. The compound of claim 12, wherein the alkylamine contains ethylamine, n-propylamine, n-butylamine,, t-butylamine, n-hexylamine, 2-ethylhexylamine, n-dodecylamine and aniline Photosensitive material, characterized in that at least one selected from the group. 제13항에 있어서, 상기 알킬아민은 n-부틸아민 및/또는 n-헥실아민인 것을 특징으로 하는 감광재료.The photosensitive material as claimed in claim 13, wherein the alkylamine is n-butylamine and / or n-hexylamine. 제10항 내지 제14항중 어느 한항에 있어서, 첨가한 알킬아민의 양은 카본클러스터의 5 내지 100중량%인 것을 특징으로 하는 감광재.료15. The photosensitive material according to any one of claims 10 to 14, wherein the amount of the alkylamine added is 5 to 100% by weight of the carbon cluster. 제1항에 있어서, 감광재료의 종류는 가교형 (네가티브형) 또는 붕괴형(포지티브형) 인 것을 특징으로 하는 감광재료.The photosensitive material according to claim 1, wherein the type of photosensitive material is crosslinked (negative) or disintegrated (positive). 제16항에 있어서, 감광재료의 종류는 가교형 (네가티브형) 인 것을 특징으로 하는 감광재료.17. The photosensitive material as claimed in claim 16, wherein the type of photosensitive material is crosslinked (negative). 제1항에 있어서, 감광기는 자외선, 원자외선, X선, 전자선을 조사함으로서 호학반응을 야기시키는 관능기로 이루어진 그룹에서 선택된 적어도 하나 이상인 것을 특징으로 하는 감광재료.The photosensitive material as claimed in claim 1, wherein the photosensitive device is at least one selected from the group consisting of functional groups which cause an arc reaction by irradiating ultraviolet rays, far ultraviolet rays, X rays, and electron beams. 제8항에 있어서, 상기 감광재료는 아크릴로일기, 메타크로일기, 비닐기 및 에톡시기로 이루어진 그룹중에서 선택된 적어도 하나 이상인 것을 특징으로 하는 감광재료.9. The photosensitive material as claimed in claim 8, wherein the photosensitive material is at least one selected from the group consisting of acryloyl group, methacroyl group, vinyl group and ethoxy group. 제19항에 있어서, 상기 감광기는 아크릴로일기 및/또는 메타크로일기인 것을 특징으로 하는 감광재료.20. The photosensitive material as claimed in claim 19, wherein the photosensitive group is acryloyl group and / or methacroyl group. 제1항에 있어서, 상기 감광기의 첨가량은 플러렌 1몰당 0.1 내지 10몰인 것을 특징으로 하는 감광재료.The photosensitive material as claimed in claim 1, wherein the amount of the photoreceptor is added in an amount of 0.1 to 10 moles per mole of fullerene. 제21항에 있어서, 상기 감광기의 첨가량은 플러렌 1몰당 0.3 내지 5몰인 것을 특징으로 하는 감광재료.22. The photosensitive material as claimed in claim 21, wherein the amount of the photoreceptor added is 0.3 to 5 moles per mole of fullerene. 제21항에 있어서, 상기 감광기의 첨가량은 플러렌 1몰당 0.5 내지 3몰인 것을 특징으로 하는 감광재료.22. The photosensitive material as claimed in claim 21, wherein the amount of the photoreceptor is 0.5 to 3 moles per mole of fullerene. 제3항에 있어서, 상기 플러렌과 혼합된 감광제는 자외선, 원자외선, X선, 전자선을 조사함으로서 화학반응을 일으키는 감광제로 구성된 그룹에서 선택괸 적어도 하나인 것을 특징으로 하는 감광재료.The photosensitive material according to claim 3, wherein the photoresist mixed with the fullerene is at least one selected from the group consisting of a photoresist which causes a chemical reaction by irradiating ultraviolet rays, far ultraviolet rays, X-rays, and electron beams. 제24항에 있어서, 상기 감광재는 분자에서 둘 또는 그 이상의 감광기를 가진 다관능의 감광제로 이루어진 그룹에서 선택된 적어도 하나 이상인 것을 특징으로 하는 감광재료.25. The photosensitive material as claimed in claim 24, wherein the photoresist is at least one selected from the group consisting of multifunctional photosensitizers having two or more photoresists in the molecule. 제24항에 있어서, 상기 프럴렌과 혼합된 감광제는 아지도화합물에서 선택된 적어도 하나이상인 것을 특징으로 하는 감광재료.25. The photosensitive material as claimed in claim 24, wherein the photoresist mixed with the pralene is at least one selected from azido compounds. 제26항에 있어서, 상기 아지도 화합물은 4-아지도벤잘아세토페논, 4-아지도벤잘-4′-메탈아세트페논, 4-아지도벤잘-4′메톡시아세토페논, 4, 4′-디아지도메잘아페토페논, 4-아지도벤조페논, 2, 6-디(4′-아지도벤잘)시이클로헥사논, 2, 6-디(4′-아지도벤잘)-4-메톡시사이클로헥사논, 2, 6- 디(4′-아지도벤잘)-4-t-아밀사이클로헥사논, 4, 4′-디아지도디페닐설폰, 4, 4′-디아지도디페닐에테로, 4, 4′-디아지도페닐설파이드 및 4, 4′-디아지도디페닐메탄으로 이루어진 군에서 선택된 적어도 하나이상인 것을 특징으로 하는 감광재료.The azidobenzalacetophenone, 4-azidobenzal-4'-metalacetphenone, 4-azidobenzal-4 'methoxyacetophenone, 4, 4'-, Diazidomethazalapetophenone, 4-azidobenzophenone, 2, 6-di (4'-azidobenzal) cyclohexanone, 2, 6-di (4'-azidobenzal) -4-methoxycyclo Hexanone, 2, 6-di (4′-azidobenzal) -4-t-amylcyclohexanone, 4, 4′-diazidodiphenylsulfone, 4, 4′-diazidodiphenylether, 4 And 4′-diazidophenyl sulfide and 4, 4′-diazidodiphenylmethane. 제27항에 있어서, 상기 아지도화합물은 4, 4′-디아지도메잘아페토페논, 4-아지도벤조페논, 2, 6-디(4′-아지도벤잘) 사이클로헥사논, 2, 6-디(4′-아지도벤잘)-4-메틸사이클로헥사논, 2, 6-디(4′-아지도벤잘) -4-아밀사이클로헥사논,4, 4′-디아지도디페닐설폰, 4, 4′-디아지도디페닐에테로, 4, 4′-디아지도페닐설파이드 및 4, 4′-디자이도디페닐메탄으로 이루어진 군에서 선택된 적어도 하나이상인 것을 특징으로 하는 감광재료.28. The method of claim 27, wherein the azido compound is 4, 4'-diazidomethazalfetophenone, 4-azidobenzophenone, 2, 6-di (4'-azidobenzal) cyclohexanone, 2, 6- Di (4′-azidobenzal) -4-methylcyclohexanone, 2, 6-di (4′-azidobenzal) -4-amylcyclohexanone, 4, 4′-diazidodiphenylsulfone, 4 And at least one selected from the group consisting of 4′-diazidodiphenylether, 4,4′-diazidophenylsulfide, and 4,4′-diazidodiphenylmethane. 제24항에 있어서, 혼합에 사용된 감광제의 양은 플러렌의 양을 기준으로 해서 0.3내지 20중량％인 것을 특징으로 하는 감광재료.The photosensitive material as claimed in claim 24, wherein the amount of photosensitive agent used for mixing is 0.3 to 20% by weight based on the amount of fullerene. 제29항에 있어서, 혼합에 사용된 감광제의 양은 플러렌의 양을 기준으로 해서 1 내지 15중량％인 것을 특징으로 하는 감광재료.30. The photosensitive material as claimed in claim 29, wherein the amount of photosensitive agent used for mixing is 1 to 15% by weight based on the amount of fullerene. 제1항에 있어서, 상기 감광제에는 폴리스틸렌 또는 페놀수지의 수지가 혼합되어 사용되는 것을 특징으로 하는 감광재료.The photosensitive material according to claim 1, wherein the photosensitive agent is mixed with a resin of polystyrene or phenol resin. 제1항에 있어서, 상기 광원은 자외선, 원자외선, X-선 및 전자선으로 이루어진 군에서 선택되는 것을 특징으로 하는 감광재료.The photosensitive material as claimed in claim 1, wherein the light source is selected from the group consisting of ultraviolet rays, far ultraviolet rays, X-rays, and electron beams. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930025310A 1992-11-30 1993-11-26 Photosensitive material KR940012044A (en)

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JP92-343296 1992-11-30
JP4343296A JP2814174B2 (en) 1992-11-30 1992-11-30 Photosensitive material composition

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KR100464303B1 (en) * 1998-05-07 2005-02-28 삼성전자주식회사 Arc light lamp using fullerene compound

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JP3032833B2 (en) * 1997-09-22 2000-04-17 ザ ユニバーシティ オブ バーミンガム Electron beam resist
KR100414697B1 (en) 1999-01-25 2004-01-13 리카가쿠 겐큐쇼 Photosensitive resin composition and semiconductor apparatus using the same
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KR100801821B1 (en) * 2007-07-16 2008-02-11 삼성전자주식회사 Surface-modified carbon nanotubes
KR100821443B1 (en) * 2007-07-16 2008-04-11 삼성전자주식회사 Surface-modified carbon nanotube composition

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JP2814165B2 (en) * 1992-06-30 1998-10-22 日本石油株式会社 Photosensitive material

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KR100464303B1 (en) * 1998-05-07 2005-02-28 삼성전자주식회사 Arc light lamp using fullerene compound
KR20030002739A (en) * 2001-06-29 2003-01-09 주식회사 하이닉스반도체 Method of manufacturing a photoresist in a semiconductor device and forming a photoresist pattern using the same

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