KR940011348A - Diamond Synthesis Method - Google Patents

Diamond Synthesis Method Download PDF

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Publication number
KR940011348A
KR940011348A KR1019920022102A KR920022102A KR940011348A KR 940011348 A KR940011348 A KR 940011348A KR 1019920022102 A KR1019920022102 A KR 1019920022102A KR 920022102 A KR920022102 A KR 920022102A KR 940011348 A KR940011348 A KR 940011348A
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KR
South Korea
Prior art keywords
metal plate
solvent metal
plate
diamond particles
present
Prior art date
Application number
KR1019920022102A
Other languages
Korean (ko)
Other versions
KR960000943B1 (en
Inventor
은광용
박종구
이재갑
Original Assignee
서정욱
한국과학기술연구원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 서정욱, 한국과학기술연구원 filed Critical 서정욱
Priority to KR1019920022102A priority Critical patent/KR960000943B1/en
Publication of KR940011348A publication Critical patent/KR940011348A/en
Application granted granted Critical
Publication of KR960000943B1 publication Critical patent/KR960000943B1/en

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

본 발명은 흑연판과 용매금속판을 교대로 적층하여 고온고압하에서 다이아몬드 입자를 합성하는 방법에 관한 것이다.The present invention relates to a method for synthesizing diamond particles under high temperature and high pressure by alternately laminating a graphite plate and a solvent metal plate.

본 발명은 다이아몬드의 육성시 용매금속판과 다이아몬드 입자의 밀도차에 의해 용매금속판의 아랫쪽면에 형성된 다이아몬드 입자가 용매금속판의 윗쪽면으로 떠오르는 현상을 방지하기 위하여 용매금속판의 사이에 텅스텐이나 몰리브데늄 박판으로 이루어진 중간층을 삽입한 데에 기술적 특징이 있다.The present invention is a tungsten or molybdenum thin plate between the solvent metal plate in order to prevent the diamond particles formed on the lower surface of the solvent metal plate to rise to the upper surface of the solvent metal plate due to the density difference between the solvent metal plate and the diamond particles during the growth of diamond. There is a technical feature to insert the intermediate layer consisting of.

본 발명의 방법에 의하면 용매금속판의 상하부에 거의 같은 수, 같은 크기의 다이아몬드가 형성되는 이점이 있다.According to the method of the present invention, there is an advantage that diamonds of the same number and the same size are formed on the upper and lower portions of the solvent metal plate.

Description

다이아몬드 합성방법Diamond Synthesis Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명 방법에 의한 다이아몬드 합성과정을 보인 것으로,2 shows a diamond synthesis process according to the method of the present invention,

(a)는 합성전 교대로 적층 배열된 흑연판과 용매금속판에서 용매금속판의 사이에 중간층이 삽입된 상태이고,(a) is a state in which an intermediate layer is inserted between the solvent metal plate and the graphite plate and the solvent metal plate alternately arranged before synthesis.

(b)는 (a)로부터 합성된 다이아몬드 입자를 나타낸 것이다.(b) shows the diamond particle synthesize | combined from (a).

Claims (3)

흑연판과 용매금속판을 교대로 적층하여 고온고압하에서 다이아몬드를 합성하는 방법에 있어서, 용매금속판의 사이에 중간층을 삽입하여 용매금속판의 상하면에 동등한 수의 다이아몬드 입자를 형성시킴을 특징으로 하는 다이아몬드 합성방법.A method of synthesizing diamond at high temperature and high pressure by alternately stacking a graphite plate and a solvent metal plate, wherein an intermediate layer is interposed between the solvent metal plate to form the same number of diamond particles on the upper and lower surfaces of the solvent metal plate. . 제1항에 있어서, 중간층이 텅스텐이나 몰리브데늄 박판인 것을 특징으로 하는 다이아몬드 합성방법.The method of synthesizing diamond according to claim 1, wherein the intermediate layer is tungsten or molybdenum thin plate. 제2항에 있어서, 중간층의 두께가 10-100㎛인 것을 특징으로 하는 다이아몬드 합성방법.The method of synthesizing diamond according to claim 2, wherein the intermediate layer has a thickness of 10-100 µm. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920022102A 1992-11-23 1992-11-23 Synthesis of diamond KR960000943B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920022102A KR960000943B1 (en) 1992-11-23 1992-11-23 Synthesis of diamond

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920022102A KR960000943B1 (en) 1992-11-23 1992-11-23 Synthesis of diamond

Publications (2)

Publication Number Publication Date
KR940011348A true KR940011348A (en) 1994-06-21
KR960000943B1 KR960000943B1 (en) 1996-01-15

Family

ID=19343709

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920022102A KR960000943B1 (en) 1992-11-23 1992-11-23 Synthesis of diamond

Country Status (1)

Country Link
KR (1) KR960000943B1 (en)

Also Published As

Publication number Publication date
KR960000943B1 (en) 1996-01-15

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