KR940010106A - Current Sense Amplifier Circuit with Presetting Circuit - Google Patents
Current Sense Amplifier Circuit with Presetting CircuitInfo
- Publication number
- KR940010106A KR940010106A KR1019930018437A KR920018437A KR940010106A KR 940010106 A KR940010106 A KR 940010106A KR 1019930018437 A KR1019930018437 A KR 1019930018437A KR 920018437 A KR920018437 A KR 920018437A KR 940010106 A KR940010106 A KR 940010106A
- Authority
- KR
- South Korea
- Prior art keywords
- sense amplifier
- current sense
- circuit
- presetting
- amplifier circuit
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
Abstract
본 발명은 반도체 메모리 장치에서 특히 스태틱 램의 전류센스앰프를 소정의 액티브동작시 프리세팅(presetting)하는 전류 센스 앰프 회로에 관한 것으로, 전류센스앰프의 프리세팅을 위하여 전류센스앰프의 양단을 등화시키고 또한 전류센스앰프의 프리세팅을 위하여 전류센스앰프에 연결된 비트라인 또는 데이타 라인을 소정의 정전압레벨로 프리차아지하므로서, 신뢰성 높고 라이트 리커버리 특성이 우사한 전류센스앰프를 제공할 수 있어서, 전류센싱회로가 특히 라이트 리커버리에 민감하게 반응하는 것을 개설할 뿐만 아니라 쎌 데이타의 액세스를 고속화시키는 효과가 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a current sense amplifier circuit for presetting a current sense amplifier of a static RAM in a predetermined active operation in a semiconductor memory device. The present invention relates to equalizing both ends of a current sense amplifier for presetting the current sense amplifier. In addition, by precharging a bit line or a data line connected to the current sense amplifier to a predetermined constant voltage level for presetting the current sense amplifier, it is possible to provide a current sense amplifier with high reliability and similar light recovery characteristics. Not only makes it particularly sensitive to write recovery, but also has the effect of speeding up access of the data.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제3도는 본 발명에 의한 프리세팅회로가 구비된 전류센싱회로.3 is a current sensing circuit having a presetting circuit according to the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920018437A KR950014258B1 (en) | 1992-10-08 | 1992-10-08 | Current sense amp circuit with presetting circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920018437A KR950014258B1 (en) | 1992-10-08 | 1992-10-08 | Current sense amp circuit with presetting circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
KR940010106A true KR940010106A (en) | 1994-05-24 |
KR950014258B1 KR950014258B1 (en) | 1995-11-23 |
Family
ID=19340797
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920018437A KR950014258B1 (en) | 1992-10-08 | 1992-10-08 | Current sense amp circuit with presetting circuit |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR950014258B1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100508423B1 (en) * | 1998-12-30 | 2005-10-26 | 주식회사 하이닉스반도체 | Recovery circuit of flash memory cell |
-
1992
- 1992-10-08 KR KR1019920018437A patent/KR950014258B1/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100508423B1 (en) * | 1998-12-30 | 2005-10-26 | 주식회사 하이닉스반도체 | Recovery circuit of flash memory cell |
Also Published As
Publication number | Publication date |
---|---|
KR950014258B1 (en) | 1995-11-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20051007 Year of fee payment: 11 |
|
LAPS | Lapse due to unpaid annual fee |