KR940008659U - Semiconductor vapor deposition reactor - Google Patents

Semiconductor vapor deposition reactor

Info

Publication number
KR940008659U
KR940008659U KR2019920017102U KR920017102U KR940008659U KR 940008659 U KR940008659 U KR 940008659U KR 2019920017102 U KR2019920017102 U KR 2019920017102U KR 920017102 U KR920017102 U KR 920017102U KR 940008659 U KR940008659 U KR 940008659U
Authority
KR
South Korea
Prior art keywords
vapor deposition
deposition reactor
semiconductor vapor
semiconductor
reactor
Prior art date
Application number
KR2019920017102U
Other languages
Korean (ko)
Other versions
KR950007251Y1 (en
Inventor
송정동
임성빈
정기정
김훈섭
Original Assignee
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 현대전자산업 주식회사 filed Critical 현대전자산업 주식회사
Priority to KR92017102U priority Critical patent/KR950007251Y1/en
Publication of KR940008659U publication Critical patent/KR940008659U/en
Application granted granted Critical
Publication of KR950007251Y1 publication Critical patent/KR950007251Y1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
KR92017102U 1992-09-08 1992-09-08 Furnace for semiconductor vapor deposition KR950007251Y1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR92017102U KR950007251Y1 (en) 1992-09-08 1992-09-08 Furnace for semiconductor vapor deposition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR92017102U KR950007251Y1 (en) 1992-09-08 1992-09-08 Furnace for semiconductor vapor deposition

Publications (2)

Publication Number Publication Date
KR940008659U true KR940008659U (en) 1994-04-21
KR950007251Y1 KR950007251Y1 (en) 1995-09-04

Family

ID=19339815

Family Applications (1)

Application Number Title Priority Date Filing Date
KR92017102U KR950007251Y1 (en) 1992-09-08 1992-09-08 Furnace for semiconductor vapor deposition

Country Status (1)

Country Link
KR (1) KR950007251Y1 (en)

Also Published As

Publication number Publication date
KR950007251Y1 (en) 1995-09-04

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Legal Events

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E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
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Payment date: 20060818

Year of fee payment: 12

EXPY Expiration of term