KR940004736A - Processing apparatus and processing method of ceramic structure with micro holes - Google Patents
Processing apparatus and processing method of ceramic structure with micro holes Download PDFInfo
- Publication number
- KR940004736A KR940004736A KR1019920014230A KR920014230A KR940004736A KR 940004736 A KR940004736 A KR 940004736A KR 1019920014230 A KR1019920014230 A KR 1019920014230A KR 920014230 A KR920014230 A KR 920014230A KR 940004736 A KR940004736 A KR 940004736A
- Authority
- KR
- South Korea
- Prior art keywords
- thin wire
- fine
- workpiece
- wire
- tension
- Prior art date
Links
- 238000003672 processing method Methods 0.000 title claims abstract 4
- 239000000919 ceramic Substances 0.000 title claims description 4
- 238000011084 recovery Methods 0.000 claims abstract 10
- 239000011148 porous material Substances 0.000 claims abstract 6
- 238000004804 winding Methods 0.000 claims abstract 3
- 230000001939 inductive effect Effects 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims abstract 2
- 229920000049 Carbon (fiber) Polymers 0.000 claims 1
- 229910000831 Steel Inorganic materials 0.000 claims 1
- 239000004917 carbon fiber Substances 0.000 claims 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims 1
- 239000002861 polymer material Substances 0.000 claims 1
- 239000003381 stabilizer Substances 0.000 claims 1
- 239000010959 steel Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Mechanical Coupling Of Light Guides (AREA)
Abstract
본 발명은 수십미크론에서수백미크론의 미세한 구멍을 갖는관(pipe)형상의 구조물을 세선을 이용하여 가공하는 미세구멍을 갖는 구조물의 가공장치 및 가공방법에 관한 것으로, 내경을 형성하게 될 세선(2)과, 상기 세선을 감고 있는 이송드럼(3)과, 상기 세선의 장력을 감지하는 장력게이지(7)와, 피가공물에 상기 세선을 유도하는 제1세선가이드(6)와, 상기 피가공물을 지지하는 내부고정기(5)와, 상기 피가공물내에서 세공을 형성하고 나오는 세선(2)을 유도하는 제2세선가이드(8)와, 상기 제2세선가이드(8)를 통해 이송된 상기 세선을 회수하는 회수드럼(4)를 구비하고 있는 가공장치와, 상기 가공장치를 이용하여 적어도 하나 이상의 관통형 구조물을 내부고정기(5)에 넣어 고정시키는 제1단계, 상기 이송드럼(3)에서 빼낸 세선(2)을 피가공물의 내부구멍에 삽입하여 통과시키고, 반대쪽에서 빼낸 세선을 회수드럼(4)에 감기도록 연결하는 제2단계, 인입측 세선가이드(6) 및 배출측 세선가이드(8)의 위치를 조절하여 삽입된 세선과 피가공물의 중심을 맞추고, 장력게이지(7)로 세선의 장력을 측정하여 적절하게 조절하는 제3단계, 및 상기 이송드럼(3) 및 회수드럼(4)을 적절한 속도로 구동시켜 피가공물의 내부구멍을 통과한 세선(2)을 감아 세선과의 마찰력에 의해 원하는 크기의 내부구멍을 형성하는 제4단계를 포함하여 이루어지는 가공방법을 제공하여 수십미크론에서 수백미크론의 미세한 구멍을 갖는 관(pipe)형상의 피가공물에 원하는 크기의 세공을 형성할 수 있도록 한다.The present invention relates to a processing apparatus and a method for processing a structure having a fine hole for processing a pipe-shaped structure having a fine hole of several tens of microns to several hundred microns by using a fine wire, and a fine wire to form an inner diameter (2) ), A transfer drum (3) wound around the thin wire, a tension gauge (7) for sensing the tension of the thin wire, a first thin wire guide (6) for inducing the thin wire to the workpiece, and the workpiece The inner wire 5 supporting, the second thin wire guide 8 for guiding the fine wire 2 forming the pores in the workpiece, and the thin wire transferred through the second thin wire guide 8. A processing device having a recovery drum (4) for recovering the same, and a first step of fixing the at least one through type structure into the internal fixing device (5) by using the processing device, and in the transfer drum (3). Insert the removed fine wire (2) into the inner hole of the workpiece The second step of connecting the thin wire drawn out from the opposite side to be wound on the recovery drum 4, and adjusting the positions of the inlet thin wire guide 6 and the discharge thin wire guide 8 to insert the fine wire and the workpiece. The third step of properly adjusting the tension by measuring the tension of the thin wire with the tension gauge (7), and driving the transfer drum (3) and the recovery drum (4) at an appropriate speed to open the inner hole of the workpiece. It provides a processing method comprising a fourth step of winding the thin wire (2) passed through to form an inner hole of a desired size by frictional force with the thin wire, and has a pipe shape having a fine hole of several tens of microns to several hundred microns. It is possible to form pores of a desired size in the workpiece.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1도는 본 발명에 의해 가공된 관형 세라믹 구조물의 개략적인 외형도.1 is a schematic outline view of a tubular ceramic structure fabricated by the present invention.
제2도는 본 발명에 의한 미세구멍을 갖는 세라믹 구조물 가공장치의 개략적인 요부구성도.2 is a schematic main configuration diagram of a ceramic structure processing apparatus having micropores according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1, 1' : 피가공물 2 : 세선1, 1 ': Workpiece 2: Thin wire
3 : 이송드럼 4 : 회송드럼3: Transfer Drum 4: Return Drum
5 : 내부고정기 6, 8 : 세선 가이드5: interlock 6, 8: thin wire guide
7 : 장력게이지7: tension gauge
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920014230A KR950009288B1 (en) | 1992-08-07 | 1992-08-07 | Process and processing method of ceramic material having fine hole |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920014230A KR950009288B1 (en) | 1992-08-07 | 1992-08-07 | Process and processing method of ceramic material having fine hole |
Publications (2)
Publication Number | Publication Date |
---|---|
KR940004736A true KR940004736A (en) | 1994-03-15 |
KR950009288B1 KR950009288B1 (en) | 1995-08-18 |
Family
ID=19337663
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920014230A KR950009288B1 (en) | 1992-08-07 | 1992-08-07 | Process and processing method of ceramic material having fine hole |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR950009288B1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4768384B2 (en) | 2005-09-29 | 2011-09-07 | 株式会社東芝 | Optical transmission line holding member and optical module |
-
1992
- 1992-08-07 KR KR1019920014230A patent/KR950009288B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR950009288B1 (en) | 1995-08-18 |
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