KR940003564B1 - Making method for test pattern - Google Patents

Making method for test pattern Download PDF

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KR940003564B1
KR940003564B1 KR1019910005773A KR910005773A KR940003564B1 KR 940003564 B1 KR940003564 B1 KR 940003564B1 KR 1019910005773 A KR1019910005773 A KR 1019910005773A KR 910005773 A KR910005773 A KR 910005773A KR 940003564 B1 KR940003564 B1 KR 940003564B1
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oxide film
test pattern
oxide layer
layer
ions
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KR1019910005773A
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KR920020666A (en
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한영규
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금성일렉트론 주식회사
문정환
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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  • Weting (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

The manufacturing method comprises the steps of, forming oxide layer on silicone substrate, carrying out photo/etch process on the said oxide layer, ion injecting into a portion where the said oxide layer is removed and diffusing the said ion in the said silicone substrate to form ion diffusion layer, depositing doped polysilicone layer to keep the said doped polysilicone layer only on the portion removed of the oxide layer, thereby enabling measuring of the length of effective channel.

Description

테스트 패턴 제조방법Test pattern manufacturing method

제1도는 본 발명의 제조공정 단면도.1 is a cross-sectional view of the manufacturing process of the present invention.

제2도는 본 발명에 따른 측면확산 측정 참고도.Figure 2 is also a side diffusion measurement reference in accordance with the present invention.

제3도는 ASR 측정시의 도핑 프로파일3 shows the doping profile for ASR measurements.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 실리콘기판 2 : 산화막1 silicon substrate 2 oxide film

3 : 이온확산층 4 : 도우프된 폴리실리콘막3: ion diffusion layer 4: doped polysilicon film

PR1: 감광제PR 1 : Photosensitizer

본 발명은 테스트 패턴(Test Pattern) 제조방법에 관한 것으로, 특히 이온주입 공정이 포함된 모든 소자에서 이온이 측면확산(Lateral Diffusion)되는 깊이(Depth)를 ASR 장비를 이용하여 정확하게 측정할 수 있는 샘플의 테스트 패턴 제조방법에 관한 것이다.The present invention relates to a test pattern manufacturing method, in particular, a sample that can accurately measure the depth (Depth) lateral diffusion (Depth) ions in all devices including the ion implantation process using ASR equipment It relates to a test pattern manufacturing method of.

종래에는 반도체 소자 제조시 주입된 이온의 측면확산 깊이를 측정할 수 있는 장치와 샘플이 없어서 확장깊이를 정확하게 알 수 없어 반도체 소자 직접화에 어려움이 있었다.Conventionally, since there is no device and a sample capable of measuring the lateral diffusion depth of ions implanted during the fabrication of semiconductor devices, the expansion depth cannot be accurately known, which makes it difficult to directly semiconductor devices.

본 발명은 이와 같은 문제점을 해결하기 위하여 안출한 것으로, 주입된 이온의 측면확산을 정확하게 측정할 수 있는 샘플을 제공하는데 그 목적이 있다.The present invention has been made to solve the above problems, and an object thereof is to provide a sample that can accurately measure the side diffusion of the implanted ions.

본 발명에 의한 테스트 패턴의 제조방법을 첨두된 제1a도 내지 제1d도를 참조하여 설명하면 다음과 같다.The method for manufacturing a test pattern according to the present invention will be described with reference to FIGS. 1A to 1D as follows.

먼저 제1a도와 같이 실리콘기판(1)상에 열산화를 행하여 산화막(2)을 약 1500Å의 두께를 형성한다.First, as shown in FIG. 1A, thermal oxidation is performed on the silicon substrate 1 to form an oxide film 2 having a thickness of about 1500 kPa.

이어 제1b도와 같이 상기 산화막(2)의 중앙부위를 감광제(PR1)를 이용한 포토/에치공정을 실시하여 약 0.3㎛ 정도의 폭으로 제거한 다음 산화막(2)이 제거되어 오픈(Open)된 실리콘기판(1)상에 소정형의 이온주입을 실시한다.Subsequently, as shown in FIG. 1B, the center portion of the oxide film 2 is removed by a photo / etch process using a photosensitive agent PR 1 to a width of about 0.3 μm, and the silicon film 2 is removed and opened. A predetermined type of ion implantation is performed on the substrate 1.

이어 제1c도와 같이 감광제(PR1)를 제거한 후 드라이브인(Drive in) 공정을 수행하여 상기 주입된 소정형의 이온이 실리콘기판(1) 내에 확산되어 이온확산층(3)을 형성하도록 한다.Subsequently, as shown in FIG. 1C, the photosensitive agent PR 1 is removed and then a drive-in process is performed to diffuse the predetermined type of ions into the silicon substrate 1 to form the ion diffusion layer 3.

그리고 불순물이 도우프된(Doped) 폴리실리콘막(4)을 전체적으로 증착시킨 다음 제1d도와 같이 상기 산화막(2)의 표면을 앤드포인트(End Point)로 에칭하여 상기 오픈된 영역에 산화막(2)의 두께와 동일한 폴리실리콘막(4)이 형성되도록 한다.After depositing the doped polysilicon film 4 as a whole, the surface of the oxide film 2 is etched with an end point as shown in FIG. 1d, and the oxide film 2 is opened in the open region. The polysilicon film 4 equal to the thickness of is formed.

이상과 같이 제조되어지는 테스트 패턴은 ASR 측정시 산화막의 두께를 체크하도록 한 것으로 이때의 산화막 두께는 이온의 측면확산 측정에 하나의 중요변수로 사용된다.The test pattern manufactured as described above is to check the thickness of the oxide film during ASR measurement. The thickness of the oxide film is used as an important parameter in measuring the lateral diffusion of ions.

상기 공정에 의해 제조되는 테스트 패턴을 이용한 측면확산 계산과정을 첨부된 제2도 내지 제3도를 참조하여 설명하면 다음과 같다.The side diffusion calculation process using the test pattern manufactured by the above process will be described with reference to FIGS. 2 through 3.

제2도에 나타낸 바와 같이 베벨각도(Bebel angle) (θ)를 갖는 컷트 라인(cut line)을 통해 ASR 측정을 하면, 불순물 도핑 프로파일(Profile)은 제3도와 같을 것이다.If the ASR measurement is made through a cut line having a Bebel angle θ as shown in FIG. 2, the impurity doping profile will be as shown in FIG. 3.

제2도의 경우외에도 베벨각도(θ)의 변화와 컷트라인 포인트의 스프리트(Split)를 통하여 여러 포인트에서의 접합깊이를 측정할 수가 있다.In addition to the case of FIG. 2, the junction depth at various points can be measured through the change of the bevel angle θ and the split of the cut line point.

이와 같이 측정된 접합깊이와 측면 포인트(제2도에서는 x+y점)를 프롯팅(plotting)하여 봄으로써 측면확산 프로파일을 측정하고 예상할 수 있다..Plotting the measured joint depth and side points (x + y points in FIG. 2) can be used to measure and predict lateral diffusion profiles.

이때 컷트라인 포인트는 제1d도에서 도우프된 폴리실리콘막(4)과 산화막(2)의 색깔로써 구분할 수 있으며 가능하면 산화막(2)과 폴리실리콘막(4)과의 경계면에서부터 시작하는 것이 바람직하다.In this case, the cut line point can be distinguished by the color of the polysilicon film 4 and the oxide film 2 doped in FIG. 1d, and it is preferable to start from the interface between the oxide film 2 and the polysilicon film 4 if possible. Do.

제3도에서 a-b 사이의 산화막(2) 두께는 제2도에서의 a'-b' 사이의 두께에 해당한다.The thickness of the oxide film 2 between a-b in FIG. 3 corresponds to the thickness between a'-b 'in FIG.

이 두께를 Tox라 하고, b'-c'사이의 거리를 X라 할때 x는 아래의 식(1)으로 나타낼 수 있다.When this thickness is called Tox and the distance between b'-c 'is X, x can be expressed by Equation (1) below.

Figure kpo00002
Figure kpo00002

또한 실리콘기판(1) 내에서 도핑 프로파일에 의한 접합깊이는 제2도에서 e'-f' 사이의 깊이(xj)일 것이며, c'-e'간의 거리를 y라 할 때 y는 아래의 식(2)로 구할 수 있다.In addition, the junction depth due to the doping profile in the silicon substrate 1 will be the depth (xj) between e'-f 'in FIG. 2, where y is the following equation when the distance between c'-e' is y. Can be obtained from (2).

Figure kpo00003
Figure kpo00003

따라서, 측면확산의 정도를 측정한 결과는 제2도의 b'지점으로부터 이온이 주입되지 않은 e' 지점까지 떨어진 곳에서 접합깊이(xj)를 갖고 있다는 것이다.Therefore, the result of measuring the degree of lateral diffusion is that the junction depth (xj) is located from the point b 'in FIG. 2 to the point e' where no ions are implanted.

이상과 같이 본 발명에 의하면 측면확산 프로파일을 측정할 수 있으므로써 이를 토대로 유효채널의 길이도 측정 가능하여진다.As described above, according to the present invention, since the side diffusion profile can be measured, the effective channel length can be measured based on this.

Claims (2)

실리콘기판에 소정 두께의 산화막을 형성하는 단계, 상기 산화막상에 포토/에치공정을 실시하여 중앙부위의 소정폭만큼을 제어하는 단계, 상기 산화막이 제거된 부위에 소정형의 이온을 주입하고 드라이브인 공정을 실시하여 상기 이온을 실리콘기판내에 확산시킴으로써 이온확산층을 형성하는 단계. 전체적으로 도우프된 폴리실리콘막을 중착하고 상기 산화막의 표면을 앤드 포인트로 에치하여 상기 산화막이 제거된 부위에만 도우프된 폴리실리콘막을 남기는 단계가 차례로 포함됨을 특징으로 하는 테스트 패턴 제조방법.Forming an oxide film having a predetermined thickness on a silicon substrate, controlling a predetermined width of the center portion by performing a photo / etch process on the oxide film, injecting a predetermined type of ions into a portion where the oxide film is removed, Performing a process to diffuse the ions into the silicon substrate to form an ion diffusion layer. And depositing the doped polysilicon film on the portion where the oxide film is removed by depositing the doped polysilicon film as a whole and etching the surface of the oxide film with an end point. 제1항에 있어서, 상기 산화막은 약 1500Å 두께로 형성하고 중앙부위를 약 0.3㎛ 정도 제거하는 것을 특징으로 하는 테스트 패턴 제조방법.The test pattern manufacturing method of claim 1, wherein the oxide film is formed to a thickness of about 1500 Å and removes about 0.3 μm from the center portion.
KR1019910005773A 1991-04-11 1991-04-11 Making method for test pattern KR940003564B1 (en)

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