KR940003057A - Structure and Manufacturing Method of AM-LCD - Google Patents

Abstract

The present invention relates to a structure and a manufacturing method of an AM-LCD. In the conventional AM-LCD, an aperture ratio is reduced and a gap between a transistor region and a pixel region is formed by forming a common electrode of a storage capacitor at the same time as a gate electrode to prevent image degradation. It is to improve the problem that causes the defect of the alignment layer due to the step.

The present invention utilizes a color filter layer as a dielectric layer of a capacitor by forming a thin film transistor on an insulating substrate of a lower plate and sequentially forming a storage capacitor common electrode, a color filter, and a pixel electrode on one side of the thin film transistor and a pixel region.

Therefore, the image quality is improved by increasing the aperture ratio and minimizing the step difference between the thin film transistor region and the pixel region to prevent defects of the alignment layer.

Description

Structure and Manufacturing Method of AM-LCD

Since this is an open matter, no full text was included.

Figure 2 is a cross-sectional view of the AM-LCD process of the first embodiment of the present invention.

Figure 3 is a cross-sectional view of the AM-LCD process of the second embodiment of the present invention.

Claims (4)

In the AM-LCD consisting of upper and lower liquid crystals, the lower plate is formed by a thin film transistor consisting of a gate electrode, a gate insulating film, a semiconductor layer, and a source / drain electrode on the insulating substrate of the transistor region, and is formed on the insulating substrate of one pixel region of the transistor region. A storage capacitor common electrode and a color filter are formed to be isolated from the transistor region, and a pixel electrode is formed on the column filter layer to be connected to the thin film transistor and the drain electrode to be used as a dielectric layer of the color filter car capacitor. AM-LCD structure. An AM-LCD structure according to claim 1, wherein an insulating film is inserted between the color filter layer and the storage capacitor common electrode or between the color filter layer and the pixel electrode. Forming a transparent conductive film and a color filter in the pixel region on the insulating substrate in order and forming a first passivation layer on the entire surface; forming a thin film transistor by forming a gate electrode, a gate insulating film, and a semiconductor layer source / drain electrode in the thin film transistor region. And forming a pixel electrode on the first passivation layer of the pixel region to be connected to the drain electrode of the thin film transistor, and forming a second passivation layer on the entire surface of the AM-LCD. Way. Forming a gate electrode and a storage capacitor common electrode in the transistor region and the pixel region on the insulating substrate, respectively, and depositing an insulating film on the entire surface; and forming a transistor by forming a semiconductor layer and a source / drain electrode on the insulating film on the upper side of the gate electrode. Forming a protective film in the transistor region, forming a color filter layer on the insulating film outside the pixel region, and forming a contact hole in the drain electrode of the transistor to form a pixel electrode on the color filter layer so as to be connected to the drain electrode. AM-LCD manufacturing method characterized in that it is manufactured. ※ Note: The disclosure is based on the initial application.