KR940001755B1 - Ion implantation apparatus - Google Patents

Ion implantation apparatus

Info

Publication number
KR940001755B1
KR940001755B1 KR9012670A KR900012670A KR940001755B1 KR 940001755 B1 KR940001755 B1 KR 940001755B1 KR 9012670 A KR9012670 A KR 9012670A KR 900012670 A KR900012670 A KR 900012670A KR 940001755 B1 KR940001755 B1 KR 940001755B1
Authority
KR
South Korea
Prior art keywords
ion implantation
implantation apparatus
ion
implantation
Prior art date
Application number
KR9012670A
Other languages
English (en)
Other versions
KR910019134A (ko
Inventor
Masao Naito
Tetsuya Nakanishi
Shigeo Sasaki
Susumu Kato
Masayatsu Danjou
Kazuhiro Shonou
Naomitsu Fujishita
Kazuhiko Noguchi
Original Assignee
Mitsubishi Electric Corp
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp, Nissin Electric Co Ltd filed Critical Mitsubishi Electric Corp
Publication of KR910019134A publication Critical patent/KR910019134A/ko
Application granted granted Critical
Publication of KR940001755B1 publication Critical patent/KR940001755B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24542—Beam profile

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Measurement Of Radiation (AREA)
KR9012670A 1989-08-17 1990-08-17 Ion implantation apparatus KR940001755B1 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP21183289 1989-08-17
JP519190 1990-01-12
JP1-211832 1990-01-12
JP2-5191 1990-01-12
JP2114307A JP2665819B2 (ja) 1989-08-17 1990-04-27 イオン注入装置
JP2-114307 1990-04-27

Publications (2)

Publication Number Publication Date
KR910019134A KR910019134A (ko) 1991-11-30
KR940001755B1 true KR940001755B1 (en) 1994-03-05

Family

ID=26339096

Family Applications (1)

Application Number Title Priority Date Filing Date
KR9012670A KR940001755B1 (en) 1989-08-17 1990-08-17 Ion implantation apparatus

Country Status (3)

Country Link
EP (2) EP0701269B1 (ko)
JP (1) JP2665819B2 (ko)
KR (1) KR940001755B1 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4662610B2 (ja) * 2000-06-29 2011-03-30 株式会社アルバック 立体収束質量分離器
JP3727050B2 (ja) * 2001-01-19 2005-12-14 住友イートンノバ株式会社 イオン注入装置及びそのイオンソース系の調節方法。
DE602004031817D1 (de) * 2004-01-21 2011-04-28 Integrated Circuit Testing Strahlenoptische Komponente mit einer teilchenoptischen Linse
JP4365441B2 (ja) * 2008-03-31 2009-11-18 三井造船株式会社 イオン注入装置、イオン注入方法及びプログラム

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6037642A (ja) * 1983-08-10 1985-02-27 Hitachi Ltd イオン打込装置用質量分離器
JPS62243231A (ja) * 1986-04-15 1987-10-23 Mitsubishi Electric Corp 半導体製造装置
JPH01144967A (ja) * 1987-12-02 1989-06-07 Tsusho Sangiyoushiyou Kiso Sangyo Kyokucho エタノールの濃縮方法
JPH03219544A (ja) * 1989-06-06 1991-09-26 Mitsubishi Electric Corp 荷電粒子注入装置

Also Published As

Publication number Publication date
KR910019134A (ko) 1991-11-30
JPH03263748A (ja) 1991-11-25
JP2665819B2 (ja) 1997-10-22
EP0701269B1 (en) 1997-03-26
EP0701268A1 (en) 1996-03-13
EP0701269A1 (en) 1996-03-13

Similar Documents

Publication Publication Date Title
EP0416549A3 (en) Ion implantation equipment
EP0413366A3 (en) Ion implantation apparatus
AU7490091A (en) Apparatus for ion implantation
EP0413492A3 (en) Osteoprosthetic implant
EP0406773A3 (en) Auto-playing apparatus
GB2234406B (en) Receiving apparatus
EP0413406A3 (en) Zone-forming apparatus
EP0491313A3 (en) Ion implantation method and apparatus
EP0434006A3 (en) Auto-playing apparatus
GB9122283D0 (en) Ion implantation apparatus
IL95524A0 (en) Implanter
GB8929300D0 (en) Apparatus
GB2233124B (en) Ion implantation apparatus
GB8922225D0 (en) Apparatus and methods relating to ion implantation
GB8623453D0 (en) Ion implantation
GB8912832D0 (en) Bale-wrapper apparatus
GB8900030D0 (en) Apparatus
GB2204446B (en) Ion implantation method
HUT56038A (en) Chip-transporting apparatus
KR940001755B1 (en) Ion implantation apparatus
GB2270306B (en) Feeder-folder apparatus
GB2228899B (en) Date-stamping apparatus
GB8905616D0 (en) Egg-cleaning apparatus
HUT56040A (en) Chip-transporting apparatus
HU908281D0 (en) Meat-smoking apparatus

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20030224

Year of fee payment: 10

LAPS Lapse due to unpaid annual fee