KR940001291B1 - Manufacturing method of trasparent conducting film for amorphous silicon solar cell - Google Patents
Manufacturing method of trasparent conducting film for amorphous silicon solar cell Download PDFInfo
- Publication number
- KR940001291B1 KR940001291B1 KR1019900013868A KR900013868A KR940001291B1 KR 940001291 B1 KR940001291 B1 KR 940001291B1 KR 1019900013868 A KR1019900013868 A KR 1019900013868A KR 900013868 A KR900013868 A KR 900013868A KR 940001291 B1 KR940001291 B1 KR 940001291B1
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- conductive film
- amorphous silicon
- silicon solar
- transparent conductive
- Prior art date
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000011521 glass Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 18
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 15
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000011737 fluorine Substances 0.000 claims abstract description 14
- 239000012159 carrier gas Substances 0.000 claims abstract description 8
- 239000005361 soda-lime glass Substances 0.000 claims abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 150000003606 tin compounds Chemical class 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052788 barium Inorganic materials 0.000 claims abstract description 4
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000003570 air Substances 0.000 claims abstract description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 3
- 239000001301 oxygen Substances 0.000 claims abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 13
- 229910001887 tin oxide Inorganic materials 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 239000011259 mixed solution Substances 0.000 claims description 6
- 150000002222 fluorine compounds Chemical class 0.000 claims description 4
- 238000000197 pyrolysis Methods 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- 229910017855 NH 4 F Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 2
- 125000004429 atom Chemical group 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims description 2
- 125000001153 fluoro group Chemical group F* 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims 2
- 239000000203 mixture Substances 0.000 abstract description 6
- CDMADVZSLOHIFP-UHFFFAOYSA-N disodium;3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane;decahydrate Chemical compound O.O.O.O.O.O.O.O.O.O.[Na+].[Na+].O1B([O-])OB2OB([O-])OB1O2 CDMADVZSLOHIFP-UHFFFAOYSA-N 0.000 abstract description 3
- 229910021626 Tin(II) chloride Inorganic materials 0.000 abstract 2
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 abstract 2
- 235000011150 stannous chloride Nutrition 0.000 abstract 2
- AXZWODMDQAVCJE-UHFFFAOYSA-L tin(II) chloride (anhydrous) Chemical compound [Cl-].[Cl-].[Sn+2] AXZWODMDQAVCJE-UHFFFAOYSA-L 0.000 abstract 2
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 abstract 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 abstract 1
- PKKGKUDPKRTKLJ-UHFFFAOYSA-L dichloro(dimethyl)stannane Chemical compound C[Sn](C)(Cl)Cl PKKGKUDPKRTKLJ-UHFFFAOYSA-L 0.000 abstract 1
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 16
- 239000000243 solution Substances 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
Description
제1도는 본 발명에 따른 방법을 실현시키기 위해 사용된 장치의 개략도.1 is a schematic diagram of an apparatus used to realize the method according to the invention.
제2도는 본 발명에서 얻은 불소 함유 산화주석 투명 전도막을 이용한 비정질 실리콘 태양전지 개략도.2 is a schematic view of an amorphous silicon solar cell using the fluorine-containing tin oxide transparent conductive film obtained in the present invention.
본 발명은 용매인 메탄올, 순수와 함께 직정 함량비의 원료를 혼합하여 용액으로 만들고, 이를 초음파 진동자를 이용하여 안개 모양의 미세한 입자로 무화시킨 다음, 이를 반송가스에 실어 가열된 유리기판 위로 운반하여 열분해 산화반응 시키는, 초음파 용액분무법에 의해 비정질 실리콘 태양전지용 불소함유 산화 주석 투명전도막을 제조하기 위한 용액조성과 제조기법에 관한 것이다.The present invention mixes the raw material of the straight content ratio with methanol, pure water as a solvent to make a solution, and atomize it into fine mist-like particles using an ultrasonic vibrator, and then carried it on a heated glass substrate by carrying it in a carrier gas The present invention relates to a solution composition and a manufacturing method for producing a fluorine-containing tin oxide transparent conductive film for an amorphous silicon solar cell by pyrolysis oxidation reaction by ultrasonic solution spray method.
제2도와 같은 구조를 가진 비정질 실리콘 태양전지에서 유리기판위 투명전극으로 사용되는 투명 전도막은 태양 가시광에 대한 투과율이 높아야 하는 동시에 저항이 낮아야 한다. 불소(F)가 함유된 산화주석(SnO2)를 재질로 하는 투명전도막은 이와 같은 성질을 만족시키는 동시에 화학적 내구성이 매우 우수한 특성을 가진 것으로 알려져 있다.In the amorphous silicon solar cell having the structure as shown in FIG. 2, the transparent conductive film used as the transparent electrode on the glass substrate should have high transmittance to solar visible light and low resistance. It is known that a transparent conductive film made of tin oxide (SnO 2 ) containing fluorine (F) satisfies these properties and has excellent chemical durability.
제조법으로서는 진공증착(Vacuum evaporation), 스퍼터링(Sputtering), 이온플레이팅(Ion plating), CVD(Chemical vapour deposition)등의 화학적 박막제조법이 있는데 생산원가 측면에서 화학적 박막제조법이 물리적 박막제조법 보다 훨씬 경제적이다.Chemical thin film manufacturing methods such as vacuum evaporation, sputtering, ion plating, chemical vapor deposition (CVD), etc. are manufactured. .
화학적 박막제조법중 CVD법에 의한 불소 함유 산화주석 투명전도막 제조에 관해서는 이미 수편의 특허(일본 64-61959, 61-225714, 63-89657, 61-227946)가 출원 공개되어 있다.In the chemical thin film manufacturing method, several patents (Japanese 64-61959, 61-225714, 63-89657, 61-227946) have already been filed and disclosed for the production of a fluorine-containing tin oxide transparent conductive film by CVD.
CVD 법에서는 출발물질로서 기체를 사용하거나 또는 액체 상태의 원료 HF, SnCl4, H2O, CH3OH를 각각 별도의 장치로 증기를 발생시키고 조성비에 맞게 각각의 증기 투입량을 조정하여(이를 반송가스에 실어 가열된 유리기판 위에서 열분해 산화반응에 의해) 불소 함유 산화주석 투명전도막을 제조하게 된다.In the CVD method, a gas is used as a starting material or raw materials HF, SnCl 4 , H 2 O, and CH 3 OH in a liquid state are generated by a separate device, and each steam input amount is adjusted according to the composition ratio Fluorine-containing tin oxide transparent conductive film was prepared by pyrolytic oxidation reaction on a heated glass substrate loaded on gas.
그러나 본 발명에서는 원료를 용매인 메탄올, 순수와 함께 적정 함량비로 혼합, 용액으로 만들어 이를 초음파 진동자를 이용하여 안개 모양의 미세한 입자로 무화시킨 다음 이를 반송가스에 실어 가열된 유기기판 위에서 열분해 산화반응에 의해 불소함유 산화주석 투명전도막을 제조하는 초음파 용액 분무법이므로 제조 기술면에서 CVD법과는 근본적으로 다른 제조방법이다. 또한 CVD법과는 달리 각각의 필요원료 투입량을 조정하는 번거로움이 없이, 적절한 용액조성과 제조조건 및 간단한 제조장치로써 우수한 막질의 비정질 실리콘 태양전지용 투명전도막을 얻을 수 있다.However, in the present invention, the raw material is mixed with a solvent of methanol and pure water in a proper content ratio, and made into a solution, and atomized into mist-like fine particles by using an ultrasonic vibrator, which is loaded on a carrier gas and subjected to pyrolysis oxidation reaction on a heated organic substrate. It is an ultrasonic solution spraying method for producing a fluorine-containing tin oxide transparent conductive film by means of a manufacturing method, which is fundamentally different from the CVD method in terms of manufacturing technology. In addition, unlike the CVD method, it is possible to obtain an excellent film quality amorphous silicon solar cell transparent conductive film with proper solution composition, manufacturing conditions, and a simple manufacturing apparatus, without the hassle of adjusting the amount of necessary raw materials.
초음파 용액 분무에 의한 박막제조장치에 대해서는 이미 몇편의 특허(미국 3880112, 일본 61-69961, 63-16068, 64-28378)가 출원 공개되어 있으며, 제조장치의 구성 또는 무화용 노즐장치 및 초음파 용액 분무법을 이용하여 안티몬(Sb) 함유 산화주석 투명전도막 제조를 위한 용액 조성에 관해서 설명되어 있으나, 불소 함유 산화주석 투명전도막을 제조하기 위한 용액조성과 제조기법에 관한 특허는 출원되지 있지 않다.Several patents (US 3880112, Japan 61-69961, 63-16068, 64-28378) have already been filed and disclosed for the thin film manufacturing apparatus by ultrasonic solution spraying. Although a solution composition for preparing an antimony (Sb) -containing tin oxide transparent conductive film is described using the present invention, there is no patent for a solution composition and a manufacturing method for manufacturing a fluorine-containing tin oxide transparent conductive film.
이하 발명이 요지를 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail.
유리가판 위에 투명 전도막을 제조하는 방법으로 메탄올을 주용매로 순수와 주석화합물과 불소화합물을 이용한 방법에 있어서, 혼합용액을 초음파 진동자를 이용하여 무화시킨 다음 이를 반송가스와 함께 유리기판에 접촉시켜 열분해 산화반응에 의해 불순물로서 불소(F)가 함유된 산화주석(SnO2)을 주성분으로 하며, 유리기판은 코닝 7059 바륨 붕사 유리, 소다석회 유리, 소다석회 유리위에 알카리 이온의 확산억제를 위해 산화규석(SiO2)막을 입힌 유리를 이용하고 주석화합물은 SnCl2·2H2O, SnCl4, SnCl4, nH2O(n=5), (CH3)2SnCl2이고 불소화합물은 NH4F, HF중 어느 하나이고, 혼합용액중 주석(Sn) 원자에 대한 불소원자의 무게비가 0.2% 이상으로 하며 혼합용액중 H2O에 대한 CH3OH의 몰비가 0.2 이상으로 하고, 초음파 진동자의 발생 주파수 1-2MHz이며 반송가스는 공기, 산소, 질소중 어느 하나이고 열분해 산화반응을 위한 유리기판 온도가 400℃-500℃ 범위이며 불소 함유된 산화 주석막은 두께 0.3-1μm 범위로 표면 요철구조를 가지게 하는 제조방법인 것이다.In the method of manufacturing a transparent conductive film on a glass substrate using methanol as the main solvent, pure water, tin compounds and fluorine compounds, the mixed solution is atomized using an ultrasonic vibrator and then pyrolyzed by contacting the glass substrate with a carrier gas. The main component is tin oxide (SnO 2 ) containing fluorine (F) as an impurity by oxidation reaction, and the glass substrate is composed of silica oxide for suppressing diffusion of alkali ions on Corning 7059 barium borax glass, soda-lime glass, and soda-lime glass. The glass with (SiO 2 ) film is used and the tin compound is SnCl 2 · 2H 2 O, SnCl 4 , SnCl 4 , nH 2 O (n = 5), (CH 3 ) 2 SnCl 2 and the fluorine compound is NH 4 F, Either of HF, the weight ratio of fluorine atoms to tin (Sn) atoms in the mixed solution is at least 0.2%, the molar ratio of CH 3 OH to H 2 O in the mixed solution is at least 0.2, and the generation frequency of the ultrasonic vibrator 1-2 MHz carrier Seuneun to the production method have a surface relief structure in either a glass substrate, thermal decomposition temperature is 400 ℃ -500 ℃ range, and a tin oxide containing fluorine film thickness 0.3-1μm range for oxidation reaction in air, oxygen, nitrogen.
또한 본원의 제조장치를 대략적으로 도시한 도면은 제1-2도와 같으며 도면중 주요부호는 (1)은 반응실 (2)는 노즐 (3)은 유리기판 (4)는 열판 (5)는 원료용액 (6)은 원료용액 보충탱크 (7)은 초음파 진동자 (8)은 초음파 진동자 냉각수 (9)는 반송가스 (10)은 태양광 (11)은 유리기판 (12)는 투명전극 (13)은 비정질 실리콘층 (14)는 이면금속전극이다.In addition, the drawings schematically showing the manufacturing apparatus of the present application is the same as Fig. 1-2, the main reference numeral (1) is the reaction chamber (2), the nozzle (3) the glass substrate (4) is the hot plate (5) The raw material solution 6 is the raw material solution replenishment tank 7 the ultrasonic vibrator 8 the ultrasonic vibrator cooling water 9 the
[실시예]EXAMPLE
CH3OH 100cc, H2O 7cc에 SnCl4·5H2O 15g, NH4F 0.3g을 녹인 용액을 초음파 진동자(주파수 1.7MHz)로 무화시켜 이를 공기에 실어 약 425℃로 가열된 코닝 7059 바륨 붕사유리, 두께 약 1,000A의 SiO2막을 입힌 소다 석회유리 기판위에서 열분해시켜 약 300A/초의 속도로 20분후 두께 6,000A의 불소함유 산화주석 투명전도막을 얻었는데 이 투명전도막의 태양가시광 투과율은 약 80% 비저항 약 4×10-4Ωcm이었다.Corning 7059 barium heated to about 425 ° C by atomizing a solution of 15 g of SnCl 4 · 5H 2 O and 0.3 g of NH 4 F in 100 cc of CH 3 OH, 7 cc of H 2 O, and atomizing it with an ultrasonic vibrator (frequency 1.7 MHz). After 20 minutes of pyrolysis on a soda-lime glass substrate coated with borax glass and a thickness of about 1,000 A SiO 2 , a fluorine-containing tin oxide transparent conductive film with a thickness of 6,000 A was obtained after 20 minutes at a speed of about 300 A / sec. % Resistivity was about 4 × 10 −4 μm cm.
그리고 주사전자현미경으로 관찰해 본 결과 표면은 크기 약 0.2-0.3μm의 그레인(grain)이 매우 치밀하게 들어찬 요철구조를 갖고 있었다.Scanning electron microscopy showed that the surface had a concave-convex structure with very dense grains of 0.2-0.3 μm in size.
이와 같이 된 본 발명은 각각의 필요원료 투입량을 조정하는 번거로움이 없이 장치를 보다 간단히 할 수 있으면서도 CVD법에 의한 것과 대등한 우수한 막직을 얻을 수 있어 경제성 있는 태양전지에 실용화시킬 수 있는 것이다.In this way, the present invention can simplify the apparatus without the hassle of adjusting the amount of required raw materials, and can achieve excellent film thickness comparable to that by the CVD method, and can be applied to economical solar cells.
Claims (8)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900013868A KR940001291B1 (en) | 1990-09-03 | 1990-09-03 | Manufacturing method of trasparent conducting film for amorphous silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900013868A KR940001291B1 (en) | 1990-09-03 | 1990-09-03 | Manufacturing method of trasparent conducting film for amorphous silicon solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR920007251A KR920007251A (en) | 1992-04-28 |
| KR940001291B1 true KR940001291B1 (en) | 1994-02-18 |
Family
ID=19303177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019900013868A KR940001291B1 (en) | 1990-09-03 | 1990-09-03 | Manufacturing method of trasparent conducting film for amorphous silicon solar cell |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR940001291B1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010047723A1 (en) * | 2008-10-20 | 2010-04-29 | Skyworks Solutions, Inc. | Magnetic-dielectric assemblies and methods of fabrication |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101302975B1 (en) * | 2007-06-28 | 2013-09-03 | 삼성코닝정밀소재 주식회사 | MANUFACTORING METHOD OF SPUTTERING TARGET OF Aluminium doped ZnO USING SPRAY PYROLYSIS |
-
1990
- 1990-09-03 KR KR1019900013868A patent/KR940001291B1/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010047723A1 (en) * | 2008-10-20 | 2010-04-29 | Skyworks Solutions, Inc. | Magnetic-dielectric assemblies and methods of fabrication |
Also Published As
| Publication number | Publication date |
|---|---|
| KR920007251A (en) | 1992-04-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Kane et al. | Chemical vapor deposition of transparent electrically conducting layers of indium oxide doped with tin | |
| US3944684A (en) | Process for depositing transparent, electrically conductive tin containing oxide coatings on a substrate | |
| DK175462B1 (en) | Process for depositing a low-emission tin oxide film on a continuous glass substrate | |
| US4371740A (en) | Conductive elements for photovoltaic cells | |
| EP0071865B2 (en) | Glass body provided with an alkali diffusion-preventing silicon oxide layer | |
| US4952423A (en) | Production of a transparent electric conductor | |
| JPH04506505A (en) | Zinc oxyfluoride transparent conductor | |
| JPS61227946A (en) | Electroconductive glass | |
| JP4541462B2 (en) | Method for depositing a metal oxide-based layer on a glass substrate and glass substrate coated thereby | |
| KR940001291B1 (en) | Manufacturing method of trasparent conducting film for amorphous silicon solar cell | |
| US4770901A (en) | Process for formation of tin oxide film | |
| AU2007290844B2 (en) | Method of forming a zinc oxide coated article | |
| KR0176291B1 (en) | Method for fabricating transparent conductive film of zno and zno/sno2 double later using ultrasonic spraying method | |
| JPS62502811A (en) | Method for forming a transparent, cloud-free tin oxide film | |
| JP2021014384A (en) | Glass substrate with film and manufacturing method thereof | |
| DK161089B (en) | LIQUID COATING MATERIAL FOR THE PREPARATION OF HIGH QUALITY AND GOOD PERFORMANCE TINOXIDE COATINGS | |
| JP2001035262A (en) | Glass plate with conductive film, its manufacture and photoelectric transfer device using the same | |
| KR20010113877A (en) | Method of producing thin, poorly soluble coatings | |
| JPH07257945A (en) | Transparent electric conductive laminated body and pen input touch panel | |
| JPS6214221B2 (en) | ||
| EP0008236A1 (en) | Process for forming tin oxide semiconductor heterojunction devices | |
| JPS61586A (en) | Liquid coating composition for manufacturing high quality high efficiency fluorine dope tin oxide coating | |
| JP2004018913A (en) | Liquid for forming transparent conductive film and method for manufacturing substrate coated with transparent conductive film using the same | |
| WO2022114027A1 (en) | Film-attached glass substrate, and method for manufacturing same | |
| JPH0572686B2 (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E902 | Notification of reason for refusal | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20030128 Year of fee payment: 10 |
|
| LAPS | Lapse due to unpaid annual fee |