KR940000693B1 - GaAs LASER DIODE HAVING PENTAGON STRUCTURE - Google Patents

GaAs LASER DIODE HAVING PENTAGON STRUCTURE Download PDF

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KR940000693B1
KR940000693B1 KR1019880014272A KR880014272A KR940000693B1 KR 940000693 B1 KR940000693 B1 KR 940000693B1 KR 1019880014272 A KR1019880014272 A KR 1019880014272A KR 880014272 A KR880014272 A KR 880014272A KR 940000693 B1 KR940000693 B1 KR 940000693B1
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gaas
layer
laser diode
algaas
type metal
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KR1019880014272A
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KR900007149A (en
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이정훈
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주식회사 금성사
최근선
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region

Abstract

The fabrication method of the device comprises the following steps: forming n+ GaAs, p+ GaAs, n+ GaAs, n GaAs layers, n-type contact metal (28) continuously on the p+ GaAs substrate; forming double grooves between the n-type contact and the n GaAs layer and forming a single groove- between the p+ AlGaAs and the n+ GaAs layers in order to make the carrier confining region into a pentagon.

Description

5각형 구조를 갖는 GaAs 레이저 다이오드GaAs laser diode with pentagonal structure

제1도는 종래 GaAs 레이저 다이오드의 구조도.1 is a structural diagram of a conventional GaAs laser diode.

제2도는 본 발명 5각형 구조를 갖는 GaAs 레이저 다이오드의 구조도.2 is a structural diagram of a GaAs laser diode having a pentagonal structure of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1,21 : P형 메탈 2, 22 : P+GaAs판1,21: P type metal 2, 22: P + GaAs plate

3,23 : n+GaAs 4,5,24,25 : p+AlGaAs3,23: n + GaAs 4,5,24,25: p + AlGaAs

6,26 : n+AlGaAs 7,27 : nGaAs6,26: n + AlGaAs 7,27: nGaAs

8,28 : n형메탈8,28: n-type metal

본 발명은 GaAs 레이저 다이오드에 관한 것으로, 특히 GaAs층에 3개의 홈을 파 전자집중이 5각형으로 되게하여 광출력을 증대하도록한 5각형 구조를 갖는 GaAs 레이저 다이오드에 관한 것이다.The present invention relates to a GaAs laser diode, and more particularly, to a GaAs laser diode having a pentagonal structure in which three grooves in the GaAs layer have a wave electron concentration to be pentagonal to increase light output.

종래의 GaAs 레피저 다이오드는 제1도에 도시한 바와같이, p+GaAs 판(2)위에 n+GaAs 층(3)을 증착하여 브로킹(brocking)층을 형성한후 포토리소그라피(Photolithography) 방법을 통해 "

Figure kpo00001
"로 되는 홈패턴을 형성하고, p+AlGaAs (4)로된 클래딩(Cladding)층, p+AlGaAs (5)로된 활성층, n+A1GaAs (6)로된 클래딩층, n+GaAs (7)으로된 캐핑(Capping)층을 연속증착하고, 상기 nGaAs (7)층위에 n형 메탈(8)을 증착함과 아울러 상기 p+GaAs 판(2)아래에 p형메탈(1)을 증착하여 형성된다.In the conventional GaAs repeater diode, as shown in FIG. 1, a photolithography method is formed by depositing an n + GaAs layer 3 on a p + GaAs plate 2 to form a broking layer. Through "
Figure kpo00001
Form a groove pattern, & quot ; cladding layer of p + AlGaAs (4), active layer of p + AlGaAs (5), cladding layer of n + A1GaAs (6), n + GaAs (7) Formed by depositing a continuous capping layer, depositing an n-type metal (8) on the nGaAs (7) layer, and depositing a p-type metal (1) under the p + GaAs plate (2). do.

이와같이 형성된 종래의 GaAs 레이저 다이오드는 n형 메탈층(8)을 통과한 전자가 nGaAs(7), n+AlGaAs (6) p+AlGaAs (5)(4)를 지난후 n+GaAs (3)의 허용된 지역에 집중된 형태로 p+p형 메탈을 통해 빠져 나간다.In the conventional GaAs laser diode formed as described above, electrons passing through the n-type metal layer 8 pass nGaAs (7), n + AlGaAs (6) p + AlGaAs (5) (4), and then n + GaAs (3) Exit through the p + p-type metal, concentrated in the allowed area.

이때 n-p-p 배열을 이룬 AlGaAs중에서 위, 아래는 중간층보다 높게 하여 전자적경계, 광학적경계효과와 벽개면의 공진기 역할을 수행함에 따라 중간층인 활성층에서는 코히어런트(Coherent)파가 발생한다.At this time, in the n-p-p arrayed AlGaAs, the upper and lower portions are higher than the intermediate layer, and thus act as the resonator of the electron boundary, optical boundary effect, and cleavage surface, and coherent waves are generated in the active layer.

그런데 종래의 GaAs 레이저 다이오드에 있어서는 "

Figure kpo00002
"로 되는 굴곡구조의 전자집중이 부족하게 되어 광출력이 떨어지므로 더 높은 광출력을 얻는 레이저 다이오드를 요구하게 되었다.However, in a conventional GaAs laser diode,
Figure kpo00002
"The lack of electron concentration in the curved structure leads to a decrease in the light output, which requires a laser diode to obtain a higher light output.

본 발명은 이와 같은 점을 해결하기 위하여 굴곡조를 5각형 배열로 하여, 전자경계의 효율을 증대시킴으로써 높은 광출력을 얻도록 한 5각형 구조를 갖는 GaAs 레이저 다이오드를 창안한 것으로, 이를 첨부한 도면에 의해 상세히 설명하면 다음과 같다.In order to solve this problem, the present invention has devised a GaAs laser diode having a pentagonal structure in which a bend is arranged in a pentagonal arrangement to obtain high light output by increasing the efficiency of an electron boundary. If described in detail as follows.

제2도는 본 발명 5각형 구조를 갖는 GaAs 레이저다이오드의 구조도로서 이에 도시한 바와같이, p+GaAs 판(22) 위에 n+GaAs(23)로 브로킹층을 형성하고, p+AlGaAs(24)(25), n+AlGaAs(26)로 클래딩층을 형성하고, nGaAs(27)로 캐핑층을 형성하고, 상기 nGaAs(27)층위에 n형메탈(28)을 형성함과 아울러 상기 p+GaAs판(22) 아래에 p형메탈(21)을 형성한 레이저 다이오드에 있어서, 상기 캐핑층인 nGaAs(27)층에 "

Figure kpo00003
"와 같은 홈을 형성하고, 상기 브로킹층인 n+GaAs(23)층에 "
Figure kpo00004
"와 같은 홈을 형성하여 5각형의 배열을 이루게 구성한 것이다.FIG. 2 is a structural diagram of a GaAs laser diode having a pentagonal structure of the present invention, as shown in FIG. 2, where a broking layer is formed on a p + GaAs plate 22 with n + GaAs 23, and p + AlGaAs 24 ( 25), a cladding layer is formed of n + AlGaAs (26), a capping layer is formed of nGaAs (27), and an n-type metal (28) is formed on the nGaAs (27) layer and the p + GaAs plate (22) In the laser diode having the p-type metal 21 formed thereon, the nGaAs (27) layer serving as the capping layer is "
Figure kpo00003
A groove, such as ", and in the n + GaAs (23) layer
Figure kpo00004
"To form a groove, such as to form a five-point array.

이와같이 구성된 본 발명은 n형메탈(28)층과 오오믹접촉(OhMic Contact)를 이룬 캐핑층인 nGaAs(27)층을 통과한 전자가 n+GaAs(26), p+GaAs(25)(24)와 같은 활성층을 지나 브로킹층인 n+GaAs(23)의 허용된 지역에 집중된 형태로 p+GaAs 판(22), p형메탈 (21)을 통해 빠져나간다.According to the present invention, electrons passing through the nGaAs (27) layer, which is a capping layer in ohmic contact with the n-type metal 28 layer, are n + GaAs (26), p + GaAs (25) (24). And pass through the p + GaAs plate 22 and the p-type metal (21) in a concentrated form in the allowed area of the n + GaAs (23) that is the breaking layer through the active layer.

이때 n-p-p 배열을 이룬 n+AlGaAs(26), p+AlGaAs(25)(24)의 위, 아래가 중간층보다 Al집중을 높게 되어 전자경계면, 광학적경계효과와 벽개면의 공진기 역할을 수행함에 따라 활성층에서는 코히어런트파가 발생 된다.At this time, n + AlGaAs (26) and p + AlGaAs (25) (24), which form an npp array, have higher concentration of Al than the middle layer, thus acting as the resonator of electron boundary, optical boundary effect and cleavage. Coherent waves are generated.

여기서 본 발명의 특징을 순서적으로 설명하면 다음과 같다.Here will be described the features of the present invention in order.

1. 일반적으로 저항(R)에 대한 관계식은 R=PL/A P : 고유저항, L :길이, A : 면적와 같이 나타나는 것으로, n형메탈(28)과 nGaAs(27)층과의 접촉면적이 "

Figure kpo00005
"와 같은 모양을 이루어 접촉면적이 넓어짐에 따라 저항(R)값이 감소되므로 전류가 더욱 잘 흐르게 된다.1. In general, the relation of resistance (R) is expressed as R = PL / AP: specific resistance, L: length, A: area, and the contact area between n-type metal (28) and nGaAs (27) layer is "
Figure kpo00005
As the contact area becomes wider and the resistance (R) decreases, the current flows better.

이때 상기 nGaAs(27)층의 내부로 경계면을 침투시켜 "

Figure kpo00006
"와 같은 홈 부분에 집중적으로 확산이 발생되어 에너지장벽이 낮아지게 됨에 따라 전류가 증가하게 된다.In this case, the interface penetrates into the nGaAs 27 layer,
Figure kpo00006
Intensive diffusion occurs in the groove, such as ", and as the energy barrier is lowered, the current increases.

2. 캐핑층인 nGaAs(27)층에 "

Figure kpo00007
"와 같은 굴곡부조의 경계면을 형성하며 양굴곡부의 중심을 브로킹층인 n+GaAs(23)층의 중심에 둠으로써 전자의 통과부도달 확률이 증가된다.2. In the nGaAs (27) layer, which is the capping layer,
Figure kpo00007
By forming the interface of the bend relief, such as ", the center of the bend portion in the center of the n + GaAs (23) layer of the broking layer increases the probability of passage of electrons.

즉 굴곡구조가 5각형 배열로 형성되므로 전자집중현상이 증대되어 광출력이 증가된다.That is, since the curved structure is formed in a pentagonal arrangement, the electron concentration phenomenon is increased and the light output is increased.

이상에서 상세히 설명한 바와같이 본 발명은 캐핑층과 브로킹층의 굴곡구조 배열이 5각형으로 되어 전자 집중이 증대되므로 광출력이 증대되는 효과가 있다.As described in detail above, the present invention has the effect of increasing the light output because the concentration of the bent structure of the capping layer and the breaking layer is pentagonal and the electron concentration is increased.

Claims (1)

p+GaAs 판(22)위에 n+GaAs(23), p+GaAs(24)(25), n+GaAs(26), nGaAs(27), n형메탈(28)층을 연속 증착한 GaAs 레이저 다이오드에 있어서, 상기 n형 메탈층(28), nCaAs 층(27)사이에 "
Figure kpo00008
"와 같은 홈을 형성하고, 상기 p+AlGaAs 층(24), n+GaAs 층(23)사이에 "
Figure kpo00009
"와 같은 홈을 형성하여, 전자집속형태가 5각형으로 형성되는 것을 특징으로 하는 5각형 구조를 갖는 GaAs 레이저 다이오드.GaAs laser with successive deposition of n + GaAs (23), p + GaAs (24) (25), n + GaAs (26), nGaAs (27) and n-type metal (28) layers on p + GaAs plate (22) In the diode, between the n-type metal layer 28 and the nCaAs layer 27 "
Figure kpo00008
Form a groove, such as ", between the p + AlGaAs layer 24 and the n + GaAs layer 23"
Figure kpo00009
GaAs laser diode having a pentagonal structure, characterized in that to form a groove, such that the electron focusing form is formed into a pentagon.
KR1019880014272A 1988-10-31 1988-10-31 GaAs LASER DIODE HAVING PENTAGON STRUCTURE KR940000693B1 (en)

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