KR930024323U - DRAM's word line driving circuit - Google Patents
DRAM's word line driving circuitInfo
- Publication number
- KR930024323U KR930024323U KR2019920011206U KR920011206U KR930024323U KR 930024323 U KR930024323 U KR 930024323U KR 2019920011206 U KR2019920011206 U KR 2019920011206U KR 920011206 U KR920011206 U KR 920011206U KR 930024323 U KR930024323 U KR 930024323U
- Authority
- KR
- South Korea
- Prior art keywords
- dram
- word line
- driving circuit
- line driving
- word
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR92011206U KR950003389Y1 (en) | 1992-04-16 | 1992-06-23 | Word-line driving circuit of dram |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR920006282 | 1992-04-16 | ||
KR201992006282 | 1992-04-16 | ||
KR92011206U KR950003389Y1 (en) | 1992-04-16 | 1992-06-23 | Word-line driving circuit of dram |
Publications (2)
Publication Number | Publication Date |
---|---|
KR930024323U true KR930024323U (en) | 1993-11-27 |
KR950003389Y1 KR950003389Y1 (en) | 1995-04-27 |
Family
ID=70776972
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR92011206U KR950003389Y1 (en) | 1992-04-16 | 1992-06-23 | Word-line driving circuit of dram |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR950003389Y1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100316180B1 (en) * | 1994-12-30 | 2002-04-24 | 박종섭 | X-decoder circuit of semiconductor memory device |
-
1992
- 1992-06-23 KR KR92011206U patent/KR950003389Y1/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100316180B1 (en) * | 1994-12-30 | 2002-04-24 | 박종섭 | X-decoder circuit of semiconductor memory device |
Also Published As
Publication number | Publication date |
---|---|
KR950003389Y1 (en) | 1995-04-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
REGI | Registration of establishment | ||
FPAY | Annual fee payment |
Payment date: 20060320 Year of fee payment: 12 |
|
EXPY | Expiration of term |