KR930019714A - Method for preparing N-tertiary-butoxymaleimide copolymer and method for forming resist microimage using N-tertiary-butoxymaleimide copolymer - Google Patents

Method for preparing N-tertiary-butoxymaleimide copolymer and method for forming resist microimage using N-tertiary-butoxymaleimide copolymer Download PDF

Info

Publication number
KR930019714A
KR930019714A KR1019920003540A KR920003540A KR930019714A KR 930019714 A KR930019714 A KR 930019714A KR 1019920003540 A KR1019920003540 A KR 1019920003540A KR 920003540 A KR920003540 A KR 920003540A KR 930019714 A KR930019714 A KR 930019714A
Authority
KR
South Korea
Prior art keywords
butoxymaleimide
copolymer
styrene
tertiary
buomti
Prior art date
Application number
KR1019920003540A
Other languages
Korean (ko)
Other versions
KR940010966B1 (en
Inventor
안광덕
구덕일
강종희
Original Assignee
박원희
한국과학기술연구원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 박원희, 한국과학기술연구원 filed Critical 박원희
Priority to KR1019920003540A priority Critical patent/KR940010966B1/en
Publication of KR930019714A publication Critical patent/KR930019714A/en
Application granted granted Critical
Publication of KR940010966B1 publication Critical patent/KR940010966B1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/36—Amides or imides
    • C08F222/40—Imides, e.g. cyclic imides
    • C08F222/404—Imides, e.g. cyclic imides substituted imides comprising oxygen other than the carboxy oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/44—Polymerisation in the presence of compounding ingredients, e.g. plasticisers, dyestuffs, fillers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/08—Styrene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/12—Monomers containing a branched unsaturated aliphatic radical or a ring substituted by an alkyl radical
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F22/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides or nitriles thereof
    • C08F22/36—Amides or imides
    • C08F22/40—Imides, e.g. cyclic imides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)

Abstract

본 발명은 새로운 말레이미드계 단량체인 N-터셔리-부록시말레이미드를 라디칼 개시제 존재하에 단독 중합시키거나 또는 이 단량체와 스티렌계의 단량체등 다른 단량체와 라디칼 개시제 존재하에 공중합시켜 N-t-부톡시말레이미드 공중합체를 제조하고, 이 공중합체를 이용하여 미세가공 공정의 레지스트 미세화상을 형성하는 방법으로, 본 발명에 의하여 고감도, 고해상성으로 만들어지는 레지스트 화상은 내열성이 매우 우수하여 초미세가공공정에 유리하게 적용될수 있다.In the present invention, N-tertiary-butoxymaleimide, a new maleimide monomer, is polymerized in the presence of a radical initiator or copolymerized in the presence of a radical initiator with another monomer such as a monomer of a styrene-based monomer and Nt-butoxymalee. A method of preparing a mid-copolymer and forming a resist microimage in the micromachining process using the copolymer, wherein a resist image made with high sensitivity and high resolution according to the present invention has excellent heat resistance and is thus used for ultra-fine processing. It can be advantageously applied.

Description

N-터셔리-부톡시말레이미드 공중합체 제조방법 및 N-텨셔리-부톡시말레이미드 공중합체를 이용한 레지스트 미세화상 형성방법Method for preparing N-tertiary-butoxymaleimide copolymer and method for forming resist microimage using N-tertiary-butoxymaleimide copolymer

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (5)

N-터셔리-부톡시말레이미드 단량체를 디규밀퍼 옥사이드 존재하에 가열 라디칼 중합시키는 N-t-부톡시말레이미드 단독 중합체 제조방법.A method for producing an N-t-butoxymaleimide homopolymer, wherein the N-tert-butoxymaleimide monomer is heated and radically polymerized in the presence of digymilfer oxide. N-터셔리-부톡시말레이미드 단량체와 스티렌계 유도체(X-St)를 벤조일 피옥사이드, 아조비스(이소부티로니트릴)같은 라디칼 개시제 존재하에 라디칼 공중합시키는 N-t-부톡시말레이미드와 스티렌 유도체의 물비가 1:1로 조성된 공중합체 P(t-BuOMTI/X-St) 제조방법.N-butoxymaleimide and styrene derivatives which radically copolymerize N-tertiary-butoxymaleimide monomers and styrene derivatives (X-St) in the presence of radical initiators such as benzoyl pioxide and azobis (isobutyronitrile) Method for preparing copolymer P (t-BuOMTI / X-St) having a water ratio of 1: 1. 제2항에 있어서, 스티렌 유도체(X-St)가 스티렌, p-아세톡시스티렌, p-메틸스티렌, P-염화스티렌, m-염화메틸스티렌, P-t-부톡시카르보닐옥시스티렌, P-트리메틸실릴스티렌인, N-t-부톡시말레이미드와 스티렌 유도체의 공중합체 P(t-BuOMTI/X-St) 제조방법.The styrene derivative (X-St) according to claim 2, wherein the styrene derivative (X-St) is styrene, p-acetoxystyrene, p-methylstyrene, P-styrene chloride, m-methyl chloride, Pt-butoxycarbonyloxystyrene, P-trimethyl A method for producing copolymer P (t-BuOMTI / X-St) of Nt-butoxymaleimide and styrene derivative, which is silyl styrene. 제2항 또는 제3항의 공중합체 P(t-BuOMTI/X-St)에 광산발생제를 1내지 30무게%로 배합하고 적절한 유기 용매에 용해시켜 제조한 레지스트 용액을 실리콘 웨이퍼 상에 스핀 도포한 다음, 절연처리 하고 원자외선 및 엑사이머 레이저 또는 전자선 노광후 후열처리한 다음 현상하는 내열성 포지티브 및 네가티브 레지스트의 미세화상 형성방법.A resist solution prepared by blending 1 to 30% by weight of a photoacid generator with copolymer P (t-BuOMTI / X-St) of claim 2 or 3 and dissolving it in an appropriate organic solvent is spin coated on a silicon wafer. Next, a method for forming microscopic images of heat-resistant positive and negative resists which are insulated, subjected to post-heat treatment after exposure to ultraviolet rays and excimer lasers or electron beams. 제4항에 있어서, 현상액으로 가성 소자 및 트리메틸암모늄 히드록시도 수용액 같은 알칼리 수용액과 아니솔, 톨루엔, 메틸이소부틸케톤, 클로로포롬 같은 유기용제를 사용하는 내열성 포지티브 및 네가티브 레지스트 미세화상 형성방법.The method of forming a heat resistant positive and negative resist microimage according to claim 4, wherein an aqueous alkali solution, such as a caustic element and an aqueous solution of trimethylammonium hydroxide, and an organic solvent such as anisole, toluene, methyl isobutyl ketone, and chloroform are used as a developer. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920003540A 1992-03-04 1992-03-04 Process for producing n-tertiary-butoxy maleimide copolymer KR940010966B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920003540A KR940010966B1 (en) 1992-03-04 1992-03-04 Process for producing n-tertiary-butoxy maleimide copolymer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920003540A KR940010966B1 (en) 1992-03-04 1992-03-04 Process for producing n-tertiary-butoxy maleimide copolymer

Publications (2)

Publication Number Publication Date
KR930019714A true KR930019714A (en) 1993-10-18
KR940010966B1 KR940010966B1 (en) 1994-11-21

Family

ID=19329936

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920003540A KR940010966B1 (en) 1992-03-04 1992-03-04 Process for producing n-tertiary-butoxy maleimide copolymer

Country Status (1)

Country Link
KR (1) KR940010966B1 (en)

Also Published As

Publication number Publication date
KR940010966B1 (en) 1994-11-21

Similar Documents

Publication Publication Date Title
CA1273521A (en) Radiation-sensitive composition and recording material based on compounds which can be split by acid
JPH03223860A (en) Novel resist material
JP3368888B2 (en) Organometallic polymers and uses thereof
DE60016836T2 (en) resist composition
JPH0850356A (en) Positive photoresist
US3969323A (en) Photo-crosslinkable 2-pyrone polymers and processes for the manufacture thereof
Allen et al. Single layer resists with enhanced etch resistance for 193nm lithography
EP1137675A1 (en) Preparation of partially cross-linked polymers and their use in pattern formation
JP4329214B2 (en) Chemically amplified positive resist composition
GB1445345A (en) Positive-working electron resists
US5824452A (en) Resist compositions and process for the formation of resist patterns
JPH04226461A (en) Photoresist composition in liquid application type which can undergo water processing
ATE132510T1 (en) ANIONIC POLYMERIZABLE MONOMERS, POLYMERS PRODUCED THEREFROM AND THE USE OF THE POLYMERS IN PHOTORESISTORS
KR930019714A (en) Method for preparing N-tertiary-butoxymaleimide copolymer and method for forming resist microimage using N-tertiary-butoxymaleimide copolymer
AU597763B2 (en) Copolymers having o-nitrocarbinol ester groups and preparation thereof
KR930000568A (en) Method for producing N-t-butoxycarbonylmaleimide-based (co) polymer and method for forming heat resistant positive resist image using N-t-butoxycarbonylmaleimide-based (co) polymer
Hartney et al. Lithographic evaluation and processing of chlorinated polymethylstyrene
JP2747735B2 (en) Resist material
JPH0488346A (en) Resist composition
JP2001151824A (en) Resist composition
JPH03223863A (en) Resist material
US4795692A (en) Negative-working polymers useful as X-ray or E-beam resists
KR0148622B1 (en) The copolymer of n-(tert-butyloxycarbonyloxy)maleimide and styrene derivative and its processing method
JPH0721055B2 (en) Copolymer of Sulfur Dioxide and Nuclear Substituted Styrene Derivative
JPS5535373A (en) Photosensitive resin composition for screen process

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20000630

Year of fee payment: 7

LAPS Lapse due to unpaid annual fee