KR930015211A

KR930015211A - Laser diode (LD) semiconductor structure and manufacturing method

Info

Publication number: KR930015211A
Application number: KR1019910022816A
Authority: KR
Inventors: 서주옥
Original assignee: 이헌조; 주식회사 금성사
Priority date: 1991-12-12
Filing date: 1991-12-12
Publication date: 1993-07-24

Abstract

본 발명은 흐르는 전류를 좁은 영역으로 제한하여 문턱전류(1th)를 낮추도록 하며, 메사(mesa)형태의 Clad층 두께를 조절하여 빛의 제한(confine)과 안내(guiding)을 효율적으로 조절하고, 전류의 유입영역을 변화시켜 모드(mode)의 변화를 가능하게 하며, 비점수차(astigmatism)를 좋게 하여 응용소자로 사용될 때에 분해능을 양호하게 하여 주기 위한 것으로, 기판 상부에 제1전류제한층을 생성시키고, 상기 제1전류제한층을 케미칼에 칭하여 브이홈을 형성시키는 단계와, 상기 브이홈이 형성되는 제1전류제한층의 상부에 제1클레드층을 생성시키는 단계와, 상기 제1클레드층의 상부에 활성층을 생성시키는 단계와, 상기 활성층의 상부에 제2클레드층과 버퍼층들을 생성시키는 단계와, 상기 버퍼층의 상부에 산회규소막을 스퍼터링으로 생성시키고, 상기 산화규소막의 상부에 포토레지스터막을 코팅시키는 단계와, 광식각법으로 상기 포토레지스터막, 산화규소막및, 버퍼층을 케미칼에 칭하여 메사형태로 형성시키는 단계와, 상기 산화규소막의 측면을 에칭용액을 사용하여 케미칼 에칭하는 단계와, 상기 포토레지스터막을 제거시킨 후에, 제2전류 제한층을 생성시키고, 남아 있는 산회규소막을 제거시키는 단계와, 상기 제2전류제한층의 상부에 제3클레드층을 생성시키는 단계와, 상기 제3클레드층의 상부에 캡층을 생성시키는 단계와, 상기 캡층의 상부와 기판의 하부에 메탈을 중착하는 단계들을 포함하는 레이저 다이오드(LD : Laser Diode)반도체의 구조 및 제조방법이다.The present invention is to limit the current flowing to a narrow region to lower the threshold current (1th), by adjusting the mesa-type Clad layer thickness to effectively control the confinement (guinea) and (guiding) of the light, It is possible to change the mode by changing the current inflow area and to improve the astigmatism to improve the resolution when used as an application element. And forming a V-groove by calling the first current limiting layer with a chemical, and generating a first cladding layer on top of the first current limiting layer in which the V-groove is formed. Generating an active layer on top of the layer, generating a second clad layer and a buffer layer on the active layer, sputtering an acidic silicon film on the buffer layer, and Coating the photoresist film on the upper surface, forming the photoresist film, the silicon oxide film, and the buffer layer in a mesa form by chemical etching, and chemically etching the side surfaces of the silicon oxide film using an etching solution. After removing the photoresist film, generating a second current limiting layer, removing the remaining ash silicon film, and generating a third cladding layer on top of the second current limiting layer; And a method of forming a cap layer on the third clad layer, and depositing a metal on the cap layer and the lower part of the substrate.

Description

Laser diode semiconductor structure and manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 종래 레이저 다이오드(LD:Laser Diode)를 나타내는 확대단면도,1 is an enlarged cross-sectional view showing a conventional laser diode (LD),

제2도는 본 발명에 레이저 다이오드(LD:Laser Diode)의 구조를 나타내는 확대단면도,2 is an enlarged cross-sectional view showing the structure of a laser diode (LD) in the present invention;

제3도는 (가)내지 (사)는 제2도의레이저 다이오드(LD:Laser Diode)를 제작하는 과정을 나타내는 공정도.3 is a process diagram showing a process of manufacturing a laser diode (LD) of FIG. 2.

Claims

A first current limiting layer having a V-groove shape on the substrate, a first cladding layer formed on the first preliminary limiting layer, an active layer formed on the first cladding layer, and a mesa shape on the active layer A second cladding layer formed, a buffer layer formed on the mesa of the second cladding layer, a second current limiting layer formed on the second cladding layer and the buffer layer, and a cap layer formed on the second current limiting layer And a structure formed of a laser diode (LD) semiconductor including an electrode formed on an upper portion of the cap layer and a lower portion of the substrate.

The thickness of claim 1, wherein the thickness of the first cladding layer is about 0.8 μm, the thickness of the buffer layer is about 0.2 μm, the thickness of the second current limiting layer is about 1.5 μm, and the thickness of the cap layer is about 0.5 μm. Structure of a laser diode (LD) semiconductor, characterized in that.

A first current limiting layer is formed on the substrate, and the first current limiting layer is called chemical to form a v-groove, and the first cladding layer is formed on the first current limiting layer formed by the v-groove. Generating an active layer on top of the first cladding layer, forming a second cladding layer and a buffer layer on top of the active layer, and sputtering a silicon oxide film on top of the buffer layer Forming and coating a photoresist film on the silicon oxide film, etching the photoresist film, the silicon oxide film, and the buffer layer by chemical etching to form a mesa shape, and etching the side surfaces of the silicon oxide film. Chemical etching using a solution, and after removing the photoresist film, generating a second current limiting layer and removing the remaining silicon oxide film. Generating a third cladding layer on top of the second current limiting layer, creating a capping layer on top of the third cladding layer, depositing mecha on the top of the capping layer and the bottom of the substrate; A method of manufacturing a laser diode (LD) semiconductor comprising the steps.

※ Note: The disclosure is based on the initial application.