KR930015118A - Light receiving element - Google Patents
Light receiving element Download PDFInfo
- Publication number
- KR930015118A KR930015118A KR1019910023015A KR910023015A KR930015118A KR 930015118 A KR930015118 A KR 930015118A KR 1019910023015 A KR1019910023015 A KR 1019910023015A KR 910023015 A KR910023015 A KR 910023015A KR 930015118 A KR930015118 A KR 930015118A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- receiving element
- light receiving
- type
- intrinsic
- Prior art date
Links
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
내용 없음No content
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제1도는 종래의 액상 에피텍셜 성장장치(LPE)를 이용하여 형성된 수광소자 단면도.1 is a cross-sectional view of a light receiving element formed using a conventional liquid epitaxial growth apparatus (LPE).
제2도는 본발명에 따른 액상 에피텍셜 성장장치(LPE)를 이용하여 형성된 수광소자 단면도.2 is a cross-sectional view of a light receiving element formed using a liquid epitaxial growth apparatus (LPE) according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : n형 InP 기판 2 : n형 InP 버퍼층1: n-type InP substrate 2: n-type InP buffer layer
3 : i(intrinsic) - InGaAs 4 : P형 InGaAs층3: i (intrinsic)-InGaAs 4: P-type InGaAs layer
5 : i(intrinsic) - InGaAsP 형성층 6 : P형 InGaAsP 성장층5: i (intrinsic)-InGaAsP formation layer 6: P-type InGaAsP growth layer
7 : P형 InP 성장층7: P-type InP growth layer
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910023015A KR940008573B1 (en) | 1991-12-14 | 1991-12-14 | Photo absorption device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910023015A KR940008573B1 (en) | 1991-12-14 | 1991-12-14 | Photo absorption device |
Publications (2)
Publication Number | Publication Date |
---|---|
KR930015118A true KR930015118A (en) | 1993-07-23 |
KR940008573B1 KR940008573B1 (en) | 1994-09-24 |
Family
ID=19324824
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910023015A KR940008573B1 (en) | 1991-12-14 | 1991-12-14 | Photo absorption device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR940008573B1 (en) |
-
1991
- 1991-12-14 KR KR1019910023015A patent/KR940008573B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR940008573B1 (en) | 1994-09-24 |
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Legal Events
Date | Code | Title | Description |
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A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20100824 Year of fee payment: 17 |
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LAPS | Lapse due to unpaid annual fee |