KR930009596B1 - Silicon solar cell and manufacturing method thereof - Google Patents
Silicon solar cell and manufacturing method thereof Download PDFInfo
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- KR930009596B1 KR930009596B1 KR1019900006305A KR900006305A KR930009596B1 KR 930009596 B1 KR930009596 B1 KR 930009596B1 KR 1019900006305 A KR1019900006305 A KR 1019900006305A KR 900006305 A KR900006305 A KR 900006305A KR 930009596 B1 KR930009596 B1 KR 930009596B1
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- 238000004519 manufacturing process Methods 0.000 title claims description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 60
- 239000010408 film Substances 0.000 claims description 35
- 239000010409 thin film Substances 0.000 claims description 27
- 239000011521 glass Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 238000000206 photolithography Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 33
- 239000004065 semiconductor Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011532 electronic conductor Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
내용 없음.No content.
Description
제 1 도는 태양광과 형광등의 스펙트롬분포에 대응한 비결정실리콘 태양전지와 단결정실리콘태양전지에 관한 광-전기전환특성을 비교해서 도시해 놓은 그래프.1 is a graph comparing photoelectric conversion characteristics of an amorphous silicon solar cell and a monocrystalline silicon solar cell corresponding to spectroscopic distribution of solar light and fluorescent light.
제 2 도는 일반적으로 사용되고 있는 비결정실리콘태양전지의 내부구조를 도시해 놓은 단면도.2 is a cross-sectional view showing the internal structure of a conventional amorphous silicon solar cell.
제 3 도는 집적회로에 내포시킨 종래의 비결정실리콘태양전지의 내부구조를 도시해 놓은 단면도.3 is a cross-sectional view showing the internal structure of a conventional amorphous silicon solar cell embedded in an integrated circuit.
제 4a 도 내지 제 4c 도는 본 발명의 1실시예에 관한 비결정실리콘태양전지의 제조과정을 설명하기 위한 도면.4A to 4C are views for explaining a manufacturing process of an amorphous silicon solar cell according to an embodiment of the present invention.
제 5 도는 본 발명에 의한 완성된 비결정실리콘태양전지와 ITO의 비결정실리콘태양전지와의 전압-전류 특성을 측정한 결과를 나타낸 그래프.5 is a graph showing the results of measuring the voltage-current characteristics between the amorphous silicon solar cell and the amorphous silicon solar cell of ITO according to the present invention.
제 6 도는 본 발명으로 완성된 비결정실리콘태양전지와 ITO의 비결정실리콘태양전지와의 광-전기특성을 측정한 결과를 나타낸 그래프.Figure 6 is a graph showing the results of measuring the photo-electric properties of the amorphous silicon solar cell and ITO amorphous silicon solar cell completed with the present invention.
제 7 도는 본 발명에 의해 완성된 비결정실리콘태양전지의 실제적인 앞평면도 및 Al전극층의 보호층을 형성시킨 다음의 실제적인 뒤평면도이다.7 is an actual front plan view of the amorphous silicon solar cell completed by the present invention and the actual back plan view after forming the protective layer of the Al electrode layer.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1, 32 : SnO2전도막 2 :
3 : 직사각형부 4 : 섬부3: rectangular part 4: island part
5 : Al박막 21, 31 : 유리기판5: Al
22 : 전도박막 23 : P형박막22: conductive thin film 23: P-type thin film
24 : I형박막 25 : N형박막24: I type thin film 25: N type thin film
26, 34 : 알루미늄박막 33 : PIN박막층26, 34: aluminum thin film 33: PIN thin film layer
본 발명은 예컨대 휴대용 전자계산기등의 밧데리로 이용되어지는 비결정실리콘태양전지 및 그 제조방법에 관한 것으로, 특히 전기전도도가 높은 Sno2전도유리를 기판으로 사용하여 실내의 약한 조명하에서도 개선된 효율의 광-전기특성을 기할 수 있을 뿐만 아니라 횡종방향의 배열로 해서 동시에 수백개이상 양산함으로써 저렴한 가격으로 제조할 수 있도록 된 비결정실리콘태양전지 및 그 제조방법에 관한 것이다.The present invention relates to an amorphous silicon solar cell used as a battery, such as a portable electronic calculator, and a method for manufacturing the same. Particularly, the present invention uses Sno 2 conductive glass having high electrical conductivity as a substrate, thereby improving light efficiency even under low light indoors. The present invention relates to an amorphous silicon solar cell and a method for manufacturing the same, which can be manufactured at low price by mass production of several hundreds at the same time in the horizontal and longitudinal arrangement.
일반적으로 태양전지의 발전원리는 적당한 에너지를 갖는 광이 예컨대 단결정실리콘 또는 비결정실리콘반도체에 입사된다면 광기 상기 반도체와의 상호작용에 의해 전자와 정공이 발생되어, 상기 반도체중에 PN 접합에 따른 전계가 있다면 전자와 정공이 각기 n형반도체와 p형반도체에 확산하게 된다. 여기서 양전극을 결선하게 된다면 전력이 나오게 된다. 이상과 같은 발전원리의 태양전지를 소형밧데리로 이용해서 휴대용 소형전자계산기의 전원으로 적용하여 왔는데, 최근 전자 및 반도체기술등이 급격히 진보됨에 따라 태양전지의 특성향상과 저코스트화를 중심으로 활발한 연구개발이 이루어져 왔다. 이와같은 연구개발중 여러 제조방법의 단결정실리콘 및 비결정실리콘태양전지가 개발되어 왔으나 맑은날과 실내조명하에서 광-전기전환특성이 제 1 도에 도시된 바와 같이 상기 단결정실리콘태양전지보다 상기 비결정실리콘태양전지가 향상되고 있어 휴대용 전자계산기에 점차적으로 많이 사용되고 있다.In general, the principle of power generation of a solar cell is that if light having a suitable energy is incident on, for example, monocrystalline silicon or amorphous silicon semiconductor, electrons and holes are generated by interaction with the photonic semiconductor, and if there is an electric field due to PN junction in the semiconductor, Electrons and holes diffuse into n- and p-type semiconductors, respectively. If you connect the two electrodes here, the power comes out. The solar cell of the above-mentioned power generation principle has been applied as a power source of a portable small electronic calculator using a small battery. As the electronic and semiconductor technologies are rapidly advanced recently, an active research focusing on the improvement of the solar cell characteristics and the low cost. Development has been done. During the research and development, monocrystalline silicon and amorphous silicon solar cells of various manufacturing methods have been developed, but the photo-electric conversion characteristics of the amorphous silicon solar cell are higher than those of the single crystal silicon solar cell as shown in FIG. As batteries improve, they are increasingly used in portable electronic calculators.
한편, 태양전지 재료로서 비결정실리콘인 a-si재료를 이용한 종래의 비결정실리콘태양전지는, 제 2 도에 도시된 바와같이 기판인 유리판(21)의 위면에 전도박막(22)을 형성시켜 (+)전극으로 이용하게 되고 상기 전도박막(22)위에 비결정실리콘의 PIN반도체다이오드박막을 형성시킨 다음 알루미늄(Al)박막(26)을 증착시켜 (-)전극을 구성하게 된다. 여기서 상기 PIN반도체다이오드박막은 P형박막(23)과 진성층(Intrinsic layer)인 I형박막(24) 및 N형박막(25)이 차례로 형성되어져 있다.On the other hand, in the conventional amorphous silicon solar cell using the a-si material of amorphous silicon as the solar cell material, as shown in FIG. 2, the conductive
그러나 제 2 도와 같이 제조된 일반적구조의 비결정실리콘태양전지는 상기 비결정실리콘이 실제적으로 반도체로서 내부저항이 매우 커지는 것(예컨대~MΩ)을 고려해서 제 3 도에 도시된 바와 같이 대면적의 비결정실리콘태양전지에 적용하여 왔는바, 이는 어떤 제조방법으로 유기기판(31)위에 설치된 (+)전극의 전도박막층(32)위로 형성되어질 PIN박막층(33)을 보다 더 좋게 형성시킴으로서, 어떤 내부회로구성으로 부터 광을 받아 발생한 내부 광전기를 손실없이 외부회로로 쉽게 제공할 수 있다.However, the amorphous silicon solar cell of the general structure manufactured as shown in FIG. 2 has a large area of amorphous silicon as shown in FIG. 3 in consideration of the fact that the amorphous silicon is actually a semiconductor and the internal resistance becomes very large (e.g. It has been applied to solar cells, which by forming a better PIN thin film layer 33 to be formed on the conductive thin film layer 32 of the (+) electrode installed on the organic substrate 31 by any manufacturing method, to any internal circuit configuration It can be easily provided to the external circuit without losing the internal photoelectric generated by the light.
또 제 3 도에 도시된 대면적의 비결정실리콘태양전지는 전술한 바 있는 PIN박막층(33)위에 (-)전극의 Al박막층(34)을 증착시키게 되고, 도면중 부호 A 내지 C는 박막층들을 레이져로 식각해서 해당 박막층을 분리시켜 놓은 위치로서 집적회로를 내포하게 된다. 이상과 같은 제조구조를 보통 내부연결회로라고 불리우고 있는데 보통 직접 태양광을 받아 높은 전류를 출력시키게 되는 대면적파워식 비결정실리콘태양전지에서 유용하게 이용될 수 있다. 그러나 제 3 도와 같은 제조구조를 몇개의 단원(單元)전지로 연결된 작은 규격의 태양전지를 밧데리로서 정착한 예컨대 휴대용 전자계산기에 이용한다면, 즉 실내의 약한조도밑에서 작은 규격의 비결정실리콘태양전지로서 상기 내부연결회로를 사용하게 된다면 수광면적의 축소라든지 내부회로의 단락가능성에 의한 출력전력이 감소하게 된다는 결점이 있었다.In addition, in the large-area amorphous silicon solar cell shown in FIG. 3, the Al thin film layer 34 of the (-) electrode is deposited on the PIN thin film layer 33 described above, and reference numerals A to C in the drawings denote lasers. It is embedded in the integrated circuit as a position where the thin film layer is separated by etching. The fabrication structure as described above is commonly called an internal connection circuit, and can be usefully used in large area power amorphous silicon solar cells that usually output high current by receiving direct sunlight. However, if the manufacturing structure, such as the third diagram, is used in a portable electronic calculator in which a small standard solar cell connected by several unit cells is settled as a battery, that is, as an amorphous silicon solar cell of a small standard under weak illumination in the room, If the internal connection circuit is used, the output power is reduced due to the reduction of the light receiving area or the possibility of short circuit of the internal circuit.
이에 본 발명은 상기한 같은 사정을 감안해서 발명된 것으로, 전기 전도도가 높은 Sno2전도유리를 기판으로 사용하여 횡종방향의 배열로 동시에 수백개이상 양산한다할지라도 대기중의 습기나 물성분에 의해 집적회로의 접속패드들이 전해부식되지 않을 뿐만 아니라 외계와의 단면접촉등에 의해 회로단락되지 않도록 제조구성을 갖출 수 있고, 또 종래와 같은 동일한 규격하에서 수광면적을 최대한으로 크게하여 광출력전력을 보다 더 향상시켜 주는 구조를 갖춤으로서 제조가격을 최소한으로 감소시켜 양산할 수 있으며, 종래의 비결정실리콘태양전지 기판으로 많이 쓰이던 투명진도막이 ITO전도유리 대신에 전기 전도도가 높은 Sno2전도유리를 이용함으로써 약한 실내조명하에서도 광-전기특성을 대폭적으로 향상시킬 수 있도록 된 비결정실리콘태양전지 및 그 제조방법을 제공함에 그 목적이 있다.Accordingly, the present invention has been invented in view of the above-described circumstances. Even though Sno 2 conductive glass having high electrical conductivity is used as a substrate, even if it mass-produces hundreds or more at the same time in an array in the transverse longitudinal direction, it is caused by moisture or water in the atmosphere The connection pads of the integrated circuit are not only electrolytically corroded, but also have a manufacturing configuration so as not to be short-circuited by cross-sectional contact with the outside, and further increase the light output power by increasing the light receiving area to the maximum under the same standard as before. It can be mass-produced by minimizing the manufacturing cost by improving the structure, and the transparent transparent film, which was widely used as a conventional amorphous silicon solar cell substrate, is weak in the room by using Sno 2 conductive glass with high electrical conductivity instead of ITO conductive glass. Amorphous silicon pattern that can significantly improve the photo-electric properties even under lighting Its purpose is to provide a positive battery and a method of manufacturing the same.
상기 목적을 달성하기 위한 본 발명의 비결정실리콘태양전지는, 1mm두께의 유리기판위에 ITO전도막을 형성시키고, 이 ITO전도막위에 비결정실리콘층인 PIN층을 형성시킨 다음 Al박막을 형성시켜서 된 휴대용 전자계산기의 밧데리로 이용하는 비결정실리콘태양전지에 있어서, 상기 ITO전도막 대신에, Sno2전도막(1)을 반응기체에 의해 탄소층과 불소층으로 형성시켜 주는 수단과, 상기 Sno2전도막(1)위에 상기 PIN층을 전면퇴적시켜 단원전지내 상하전극의 접촉을 제거함으로서 상기 PIN층위에 Al박막(5)을 증착시키는 수단을 구비해서 각 단원전지간의 외부연결집적회로를 구성하도록 된것을 그 특징으로 한다.In the amorphous silicon solar cell of the present invention for achieving the above object, a portable electron formed by forming an ITO conductive film on a glass substrate having a thickness of 1 mm, forming a PIN layer as an amorphous silicon layer on the ITO conductive film, and then forming an Al thin film. in the amorphous silicon solar cell used in the calculator's battery, in place of the ITO conductive film, Sno 2 means that by forming a carbon layer and a fluorine layer by a conductive film (1) to the reaction gas and the Sno 2 conductive film (1 And a means for depositing Al
또 본 발명의 비결정실리콘태양전지의 제조방법은, 탄소층과 불소층으로 형성시킨 Sno2전도막(1)을 사진식각법에 의해
이하 본 발명의 1실시예를 예시도면에 의거 상세히 설명한다.Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings.
제 4a 도 내지 제 4c 도는 본 발명의 1실시예에 관한 비결정실리콘태양전지의 제조과정을 설명해 놓은 것으로, 본 발명의 비결정실리콘(예컨대 a-si) 태양전지는 횡종방향의 배열로해서 동시에 수백개이상을 제조하기 위해 제 4a 도에 도시된 바와 같이 예컨대 1mm두께의 유리기판위에 Sno2전도막(1)을 형성시킨다. 그 형성조건은 침적로의 유효길이가 예컨대 120cm이고 넓이가 42cm이며 길이의 방향에 따라 일정한 온도분포를 갖고 평균온도가 예컨대 500℃-600℃로서 온도구역의 길이가 예컨대 80cm로 이루어진다. 즉, 상기 Sno2전도막(1)의 제조방법은 도시되지 않는 전기로 상부에 2개의 특별한 분출구가 설치되어 있어 각종 반응기체가 상기 분출구를 통하여 상기 전기로내로 들어가서 고온하에서 상기 반응기체가 일정크기의 유리표면에서 화학반응을 거쳐 Sno2전도막(1)을 형성시키게 된다. 상기 Sno2전도막(1)을 형성시키기 위해 일정크기의 유리가 도시되지 않는 전송대에 의해 연속적으로 상기 전기로내로 들어가게 되고, 화학반응을 통해 상기 유리표면에 Sno2전도막(1)을 형성시킨 다음 연속적으로 상기 전송대의 동작에 의해 상기 전기로 밖으로 나오게 된다.4A to 4C illustrate a manufacturing process of an amorphous silicon solar cell according to an embodiment of the present invention, wherein the amorphous silicon (eg, a-si) solar cell of the present invention is arranged in the transverse longitudinal direction at the same time. In order to manufacture the above, as shown in FIG. 4A, for example, a Sno 2
이어 도시되지 않는 제 1 분출구를 통해 전기로로 들어가는 증기는 물, Sncl4과 CH3CH의 증기로서 이들 증기가 산소와 질소에 의해 분출된 다음, 도시되지 않는 제 2 분출구를 통해 전기로로 들어가는 증기는 물, Sncl4과 F152A(C2H4F2)증기로서 상기 물과 Sncl4증기가 산소와 질소에 의해 분출되게 된다. 따라서, 제 1 분출구 및 제 2 분출구는 도시되지 않는 전기로 길이가 다른 위치에 설치되어 있으므로 실제상 유리표면에 2층의 Sno2전도막(1)이 형성되게 된다. 여기서 제 1 층의 Sno2전도막은 탄소를 제 2 층의 Sno2전도막은 불소를 각각 내포하게 된다.The steam that enters the furnace through a first unshown outlet is then steam of water, Sncl 4 and CH 3 CH, which are ejected by oxygen and nitrogen, and then into the furnace through a second unshown outlet. As water, Sncl 4 and F152A (C 2 H 4 F 2 ) steam, the water and Sncl 4 vapor are ejected by oxygen and nitrogen. Thus, the first air outlet and a second air outlet, so that as the electrical length that is not shown is installed in a different location on the Sno second conductive film (1) of the second layer on the glass surface actually is to be formed. Here is Sno 2 contains the fluorine-conductive film of the first layer of Sno 2 conductive film a second layer of carbon, respectively.
그리고, Sno2전도막의 화학반응은 예컨대 500°-600℃ 온도하에서 다음과 같이 진행되는 바, 즉In addition, the chemical reaction of the Sno 2 conductive film proceeds as follows, for example, at a temperature of 500 ° -600 ° C.
Sncl4+O2=Sno2+2Cl2 Sncl 4 + O 2 = Sno 2 + 2Cl 2
Sncl4+2H2O=Sno2+4HClSncl 4 + 2H 2 O = Sno 2 + 4HCl
로 반응되게 된다.Will react.
전술한 바와 같이 제조된 Sno 전도막(1)의 제 4a 도에 도시된 바와 같이 CVD(Chemical Vapor Deposition) 방법으로 형성되어 사진식각법에 의해
제 4c 도에 도시된 Al박막(5)은 제 4b 도에 도시된 비결정실리콘층위에 알루미늄을 증착시킨 다음 사진식각법에 의해 노출된(-)전극부분으로 태양전지집적회로의 외부연결을 할 수 있게 된다. 또 제 4b 도에 도시된 바와 같이 비결정실리콘층은 4개의 직렬전기로서 서로 분리되어 있지 않는 상태로 있지만 그 자체의 내부저항이 상당히 MΩ으로 커져서 약한 실내조도하에서 발생하는 전류가 일반적으로 μA로 매우 작아지므로 단원전지간을 분리시키지 않아도 좋다. 상기한 바와 같이 제조된 본 발명의 비결정실리콘태양전지는 제 7 도에 도시된 완제품으로서 단원전지내에서 상하전극이 접촉되지 않도록 비결정실리콘층이 형성되어 있으므로 회로단락에 의한 출력전력의 손실을 방지하게 되어 개선된 효율의 광-전기특성을 얻을 수 있게 된다.The Al
제 5 도는 본 발명에 의해 완성된 Sno 전도막을 기판의 비결정실리콘태양전지와 ITO전도막을 기판으로한 비결정실리콘태양전지와의 전압-전류특성을 측정한 결과를 나타낸 것으로, 상기 2종류의 비결정실리콘태양전지가 실내조명하에서 예컨대 120LUX와 150LUX 및 200LUX 등에서의 전류특성차이를 나타내고 있음으로, 전술한 바와 같이 제조한 본 발명의 Sno2전도막을 태양전지기판으로 사용함으로서 개선된 효율의 전압-전류특성을 도모할 수 있어 양산단계에서 상품합격률을 다음 표 1과 같이 제고시켜 저렴한 가격으로 본 발명의 비결정실리콘태양전지를 제조할 수 있게 된다.5 shows the results of measuring the voltage-current characteristics of the amorphous silicon solar cell of the substrate and the amorphous silicon solar cell of the substrate of the Sno conductive film completed by the present invention, wherein the two types of amorphous silicon solar Since the battery exhibits a difference in current characteristics at indoor lighting, for example, 120LUX, 150LUX and 200LUX, the Sno 2 conductive film of the present invention prepared as described above can be used as a solar cell substrate for improved voltage-current characteristics. It is possible to manufacture the amorphous silicon solar cell of the present invention at a low price by improving the product pass rate in the mass production step as shown in Table 1 below.
[표 1]TABLE 1
본 발명에 의한 제조된 비결정실리콘태양전지가 실내조명 예컨대 200LUX에서 측정한 전압 및 전류의 합격률.The amorphous silicon solar cell produced according to the present invention, the pass rate of the voltage and current measured in indoor lighting, such as 200LUX.
상기 표 1에서와 같이 예컨대 휴대용 전자계산기에 밧데리로 본 발명의 비결정실리콘태양전지를 사용할 경우 인정표준은 200LUX의 실내조명하에서 1.5V의 전압과 6μA의 전류가 나오게 됨으로, 총 120개의 완성품중 109개의 합격품과 11개의 불합격품으로 90.8%의 합격률로서 높은 양산성과 높은 합격률을 나타내어 저렴한 가격으로 비결정실리콘태양전지를 제조할 수 있게 된다.As shown in Table 1, for example, when the amorphous silicon solar cell of the present invention is used as a battery in a portable electronic calculator, the recognized standard is that a voltage of 1.5 V and a current of 6 μA are output under indoor lighting of 200 LUX. Passed products and 11 rejected products, 90.8% pass rate, high mass production rate and high pass rate, it is possible to manufacture amorphous silicon solar cell at low price.
제 6 도는 본 발명에 의해 완성된 Sno2젠도막의 비결정실리콘태양전지와 ITO전도막의 비결정실리콘태양전지를 1.5V의 구동전압으로 고정시켜 놓은 다음 실내조명하에서 다른 LUX하에서 발생하는 광-전기특성을 측정한 결과를 나타낸 것으로, 도면에 나타나듯이 동등한 실내조명하에서 본 발명의 Sno2전도막을 기판으로 한 비결정실리콘태양전지가 ITO전도막을 기판으로 한 비결정실리콘태양전지 보다 광출력전류가 개선된 효율로 나타나게 된다.6 shows the photo-electric characteristics generated under different LUX under indoor lighting after fixing the amorphous silicon solar cell of the Sno 2 gen-conductor film and the amorphous silicon solar cell of the ITO conductive film at a driving voltage of 1.5V. As shown in the drawing, the amorphous silicon solar cell using the Sno 2 conductive film of the present invention as the substrate under the equivalent indoor illumination showed better efficiency in light output current than the amorphous silicon solar cell using the ITO conductive film as the substrate. do.
따라서, 본 발명의 비결정실리콘태양전지는 양산성을 제고하기 위해 종래의 제조방법과 같이 1개씩 비결정실리콘태양전지를 제조하는 방법을 개선해서 예컨대 1mm두께와 180mm의 넓이 및 305mm의 길이인 Sno2전도막위에 횡종방향으로 120개를 배열하여 놓은 다음 동시에 제 4a 도 내지 제 4c 도와 같은 제조공정을 행해 다량의 비결정실리콘태양전지를 제조하는 방법을 채용하도록 되어 있다.Therefore, the amorphous silicon solar cell of the present invention improves the manufacturing method of amorphous silicon solar cells one by one as in the conventional manufacturing method in order to improve mass production, for example, Sno 2 conduction having a thickness of 1 mm, a width of 180 mm and a length of 305 mm. A method of manufacturing a large amount of amorphous silicon solar cells is adopted by arranging 120 pieces in a transverse longitudinal direction on a film and then performing a manufacturing process as shown in FIGS. 4A to 4C.
이상 설명한 바와 같이 본 발명에 의하면, 전기 전도도가 높은 Sno2전도유리를 기판으로 사용하여 횡종방향의 배열로 동시에 수백개 이상 양산한다 할지라도 대기중의 습기나 물성분에 의해 집적회로의 접속패드들이 전해부식되지 않을 뿐만 아니라 외계와의 단면접촉등에 의해 회로단락되지 않도록 제조구성을 갖출 수 있고, 또 종래와 같은 동일한 규격하에서 수광면적을 최대한으로 크게하여 광출력전력을 보다 더 향상시켜주는 구조를 갖춤으로서 제조가격을 최소한으로 감소시켜 양산할 수 있으며, 종래의 비결정실리콘태양전지기판으로 많이 쓰이던 투명전도막인 1ITP전도유리 대신에 전기 전도도가 높은 Sno2전도유리를 이용함으로써 약한 실내조명하에서도 광-전기특성을 대폭적으로 향상시킬 수 있도록 된 비결정실리콘태양전지 및 그 제조방법을 제공할 수 있게 된다. 또 본 발명은 그 기술적요지가 벗어나지 않는 범위내에서 여러형태로 변형해서 실시할 수 있다.As described above, according to the present invention, even though the Sno 2 conductive glass having high electrical conductivity is used as a substrate, even if the mass production of several hundred or more at the same time in the transverse longitudinal arrangement, the connection pads of the integrated circuit are caused by moisture or water in the air. Not only does it have electrolytic corrosion, but it can be manufactured to prevent short circuit due to cross-contact with the outside world. Also, it has the structure to improve the light output power by increasing the light receiving area to the maximum under the same standard as before. It can be mass-produced by reducing the manufacturing cost to a minimum, and by using Sno 2 conductive glass with high electrical conductivity instead of 1ITP conductive glass, which is a transparent conductive film commonly used as a conventional amorphous silicon solar cell substrate, photo-electricity under weak indoor lighting Amorphous silicon solar cell capable of significantly improving its characteristics and its manufacture It is possible to provide the law. Moreover, this invention can be implemented in various forms within the range which does not deviate from the technical summary.
Claims (4)
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| KR1019900006305A KR930009596B1 (en) | 1990-05-03 | 1990-05-03 | Silicon solar cell and manufacturing method thereof |
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|---|---|
| KR910020948A KR910020948A (en) | 1991-12-20 |
| KR930009596B1 true KR930009596B1 (en) | 1993-10-07 |
Family
ID=19298682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019900006305A KR930009596B1 (en) | 1990-05-03 | 1990-05-03 | Silicon solar cell and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR930009596B1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010019829A1 (en) * | 2008-08-13 | 2010-02-18 | Robert Stancel | Impact resistant thin-glass solar modules |
-
1990
- 1990-05-03 KR KR1019900006305A patent/KR930009596B1/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010019829A1 (en) * | 2008-08-13 | 2010-02-18 | Robert Stancel | Impact resistant thin-glass solar modules |
Also Published As
| Publication number | Publication date |
|---|---|
| KR910020948A (en) | 1991-12-20 |
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