KR930006046A - 신물질 20(R)-진세노사이드 Rh₂ - Google Patents
신물질 20(R)-진세노사이드 Rh₂ Download PDFInfo
- Publication number
- KR930006046A KR930006046A KR1019910016456A KR910016456A KR930006046A KR 930006046 A KR930006046 A KR 930006046A KR 1019910016456 A KR1019910016456 A KR 1019910016456A KR 910016456 A KR910016456 A KR 910016456A KR 930006046 A KR930006046 A KR 930006046A
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- glucopyranoside
- ginsenoside
- die
- separation
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07J—STEROIDS
- C07J3/00—Normal steroids containing carbon, hydrogen, halogen or oxygen, substituted in position 17 beta by one carbon atom
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Steroid Compounds (AREA)
Abstract
20(S)-프로파낙사다이올-3-[O-B-D-글루코피라노사이드]는 인삼성분으로부터 분리되는 20(S)-진세노사이드 Rh2의20(R)이성체로서 신규물질임. 이물질은 프로토파낙사다이올계 사포닌을 산처리한 다음 생성물을 아세틸화하고 알카리 가수분해하여 제조함.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 적외분광 스펙트럼(브롬화칼륨정제)을 보인 도표,
제2도는 수소핵자기 공명스펙트럼(300메가헬츠, 중수소화피리딘)을 보인 도표,
제3도는 탄소 핵자기공명 스펙트럼(75메가헬츠, 중수소화피리딘)을 보인 도표.
Claims (4)
- 일반식(Ⅰ)로 표시되는 20(R)-프로토파낙사다이로-3-[O-B-D-글루코피라노사이드]식중 R1은 OH이고 R3은 CH3기이다.
- 인삼의 프로토파낙사다이올계 사포닌을 산으로 가수분해시켜 20(R&S)-진세노사이드-Rg3를 얻고 아세틸화시킨 다음 생성물을 알카리로 4℃에서 가수분해시켜 20(R)-프로토파낙사다이올-3-[O-B-D-글루코피라노사이드]를 분리함을 특징으로 하는 방법.
- 청구범위 2항에서, 최종 생성품의 분리가 세미 분취용 고속 액체 크로마토그라피에 의함을 특징으로 하는 방법.
- 청구범위 2항에서, 생성물의 분리가 실리카겔 칼람크로마토그라피에 의함을 특징으로 하는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910016456A KR940008291B1 (ko) | 1991-09-20 | 1991-09-20 | 신물질 20(R)-전세노사이드 Rh₂ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910016456A KR940008291B1 (ko) | 1991-09-20 | 1991-09-20 | 신물질 20(R)-전세노사이드 Rh₂ |
Publications (2)
Publication Number | Publication Date |
---|---|
KR930006046A true KR930006046A (ko) | 1993-04-20 |
KR940008291B1 KR940008291B1 (ko) | 1994-09-10 |
Family
ID=19320189
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910016456A KR940008291B1 (ko) | 1991-09-20 | 1991-09-20 | 신물질 20(R)-전세노사이드 Rh₂ |
Country Status (1)
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KR (1) | KR940008291B1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100650318B1 (ko) * | 2005-11-16 | 2006-11-27 | 학교법인 함주학원 | 용해도 차이를 이용한 진세노사이드 이성질체 분리 방법 |
KR100913010B1 (ko) * | 2004-07-29 | 2009-08-20 | 상하이 이노베티브 리서치 센터 오브 트레디셔날 차이니스 메디슨 | 20〔S〕-진세노사이드 Rh2의 합성 방법 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100343270C (zh) * | 2000-11-15 | 2007-10-17 | 山东绿叶天然药物研究开发有限公司 | 一种从天然植物中提取治疗恶性肿瘤产品的生产工艺 |
CN108152319A (zh) * | 2018-02-07 | 2018-06-12 | 山东省分析测试中心 | 一种基于氢核磁定量分析技术测定人参皂苷Rd对照品含量的方法 |
CN108398452A (zh) * | 2018-02-07 | 2018-08-14 | 山东省分析测试中心 | 一种基于氢核磁定量分析技术测定人参皂苷Re对照品含量的方法 |
-
1991
- 1991-09-20 KR KR1019910016456A patent/KR940008291B1/ko not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100913010B1 (ko) * | 2004-07-29 | 2009-08-20 | 상하이 이노베티브 리서치 센터 오브 트레디셔날 차이니스 메디슨 | 20〔S〕-진세노사이드 Rh2의 합성 방법 |
KR100650318B1 (ko) * | 2005-11-16 | 2006-11-27 | 학교법인 함주학원 | 용해도 차이를 이용한 진세노사이드 이성질체 분리 방법 |
Also Published As
Publication number | Publication date |
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KR940008291B1 (ko) | 1994-09-10 |
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