KR930005920B1 - Method for producing a cleaning solution of semiconductor elements - Google Patents

Method for producing a cleaning solution of semiconductor elements Download PDF

Info

Publication number
KR930005920B1
KR930005920B1 KR1019910011717A KR910011717A KR930005920B1 KR 930005920 B1 KR930005920 B1 KR 930005920B1 KR 1019910011717 A KR1019910011717 A KR 1019910011717A KR 910011717 A KR910011717 A KR 910011717A KR 930005920 B1 KR930005920 B1 KR 930005920B1
Authority
KR
South Korea
Prior art keywords
nh4f
cleaning
hcl
cleaning solution
oxide film
Prior art date
Application number
KR1019910011717A
Other languages
Korean (ko)
Other versions
KR930002541A (en
Inventor
이덕희
Original Assignee
금성일렉트론 주식회사
문정환
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 금성일렉트론 주식회사, 문정환 filed Critical 금성일렉트론 주식회사
Priority to KR1019910011717A priority Critical patent/KR930005920B1/en
Publication of KR930002541A publication Critical patent/KR930002541A/en
Application granted granted Critical
Publication of KR930005920B1 publication Critical patent/KR930005920B1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G3/00—Apparatus for cleaning or pickling metallic material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The method for preparing a cleaning soln. for a semiconductor device comprises mixing NH4F and an acid selected from HCl, HNO3, H3PO4, CH3COOH or H2SO4 to form an oxide film-etchino soln. The volume ratios of NH4F=HCl, NH4F=HNO3, NH4F=H3PO4 and NH4F=CH3COOH are each 7:1; and the volume ratio of NH4F=H2SO4 is 7:0.5. The cleaning soln. is useful in the etching process of the contact window of the metal and the source/drain, and cleaning process of the metal thin film before its deposition.

Description

반도체 소자의 세척액 제조방법Method for Manufacturing Cleaning Solution for Semiconductor Devices

본 발명은 반도체 소자의 세척액 제조방법에 관한 것으로, 특히 불화 암모늄과 산을 배합하여 산화막 식각액을 제조하므로 금속과 소오스/드레인 접촉창 식각공정과 금속박막 증착전 세척에 적당하도록한 것이다.The present invention relates to a method of preparing a cleaning solution for a semiconductor device, and particularly, to prepare an oxide film etching solution by mixing ammonium fluoride and an acid, so that it is suitable for metal and source / drain contact window etching and cleaning prior to metal thin film deposition.

종래 반도체소자 제조공정중에서의 세척은 금속과 소오스/드레인 접촉창 식각시와 금속박막 중착전에 실시한다.The cleaning process in the conventional semiconductor device manufacturing process is performed at the time of etching the metal and the source / drain contact window and before the metal thin film deposition.

먼저, 금속과 소오스/드레인 접촉창 식각시의 세척은 NH4F↔NH3(기화)+HF에 의한 화학식에 의해 HF에 의한 화학식에 의해 HF가 증발하면서 불화 암모늄이 분해되어 HF에 의해 산화막이 식각되므로 이루어진다.First, when the metal and the source / drain contact window are etched, the ammonium fluoride is decomposed while HF is evaporated by the formula of HF by the formula of NH 4 F↔NH 3 (vaporization) + HF, and the oxide film is removed by HF. It is made by etching.

또한, 금속박막을 중착전 세척은 NH4F↔NH3+HF에 의해 HF가 산화막을 식각하므로 이루어지고 NH4H2PO4↔NH4+H3PO4에 의해 NH3가 기화하면서 식각이 이루어진다.In addition, the washing of the metal thin film before deposition is performed because HF etches the oxide film by NH 4 F↔NH 3 + HF, and the etching is performed while NH 3 vaporizes by NH 4 H 2 PO 4 ↔NH 4 + H 3 PO 4 . Is done.

그러나, 상기와 같은 세척방법에 있어서는 식각액에 모두 불순물이 많이 포함되어 있어 완전한 세척이 이루어지지 않으며, 특히 금속박막 증착전 세척용액은 열적 산화막과 붕소와 인이 포함된 유리와의 식각속도 선택비가 1 : 2-3정도로 나쁜 결점이 있다.However, in the cleaning method as described above, all of the etching solution contains a large amount of impurities, and thus, complete cleaning is not performed. In particular, the cleaning solution before the deposition of the metal thin film has an etching rate selection ratio between the thermal oxide film and the glass containing boron and phosphorus. : There is a bad defect about 2-3.

본 발명은 상기와 같은 결점을 해결하기 위한것으로, 불순물이 감소되고 금속박막 증착전 세척공정의 경우 열적산화막과 붕소와 인이 포함된 유리와의 식각속도 선택비를 1 : 1.1로 개선시킬 수 있는 반도체소자의 세척방버을 제공하는데 그 목적이 있다.The present invention is to solve the above-described drawbacks, the impurity is reduced and in the case of the metal thin film pre-deposition cleaning process can improve the etch rate selectivity of the thermal oxide film and the glass containing boron and phosphorus to 1: 1.1 Its purpose is to provide a cleaning barrier for semiconductor devices.

이하에서 이와같은 목적을 달성하기 위한 본 발명의 실시예를 상세히 설명하면 다음과 같다.Hereinafter, an embodiment of the present invention for achieving such an object will be described in detail.

본 발명은 NH4F(함량 40%)와 HCL(함량 33%), HNO3(함량 25%), H3PO4(함량 85%), CH3CooH(함량 99%), H2SO4(함량 95%)중 하나가 혼합되어 혼합액으로써 식각액을 이루는 것으로 이들의 부피는 NH4F를 7이라고 할때 HCI, HNO3, H3PO4, CH3CooH는 1이되며 H2SO4는 0.5가 된다.The present invention is NH 4 F (content 40%) and HCL (content 33%), HNO 3 (content 25%), H 3 PO 4 (content 85%), CH 3 CooH (content 99%), H 2 SO 4 One of (95% of the content) is mixed to form an etchant as a mixed liquid, and their volume is HCI, HNO 3 , H 3 PO 4 , CH 3 CooH is 1 when H 4 F is 7 and H 2 SO 4 is 0.5.

또한, 이들의 화학식을 살펴보면In addition, looking at the chemical formula of these

NH4F+HCL↔HF+NH4CLNH 4 F + HCL↔HF + NH 4 CL

NF4F+HNO3↔HF+NH4NO3 NF 4 F + HNO 3 ↔HF + NH 4 NO 3

NH4F+H3PO4↔HF+NH4H2PO4 NH 4 F + H 3 PO 4 ↔HF + NH 4 H 2 PO 4

NH4F+CH3CooH↔HF+CH3CooNH4 NH 4 F + CH 3 CooH↔HF + CH 3 CooNH 4

2NH4F+H2SO4↔2HF+(NH4)2SO4가 된다.2NH 4 F + H 2 SO 4 ↔ 2HF + (NH 4 ) 2 SO 4 .

따라서, 상기 화학식에 의해 HF가 증발하면서 NH4F가 분해되어 HF를 공급하므로 이 HF에 의해 산화막이 식각되는데 이때 HF가 일정한 농도로 유지되므로 식각율 또한 일정하게 유지될 수 있는 것이다.Accordingly, the HF evaporates and NH 4 F is decomposed to supply HF by the chemical formula, so the oxide film is etched by the HF. At this time, since the HF is maintained at a constant concentration, the etching rate may be kept constant.

이상과 같은 본 발명에 의하면 식각액에 포함되는 불순물을 감소시킬 수 있으며 금속박막 증착전 세척공정의 경우 열적산화막과 붕소와 인이 포함된 유리와의 식각속도 선택비를 기존의 1 : 2-3에서 1 : 1.1로 개선시킬 수 있는 효과가 있다.According to the present invention as described above it is possible to reduce the impurities contained in the etchant and in the case of the metal thin film pre-deposition cleaning process, the etching rate selection ratio between the thermal oxide film and the glass containing boron and phosphorus in the conventional 1: 1: 2-3 1: There is an effect that can be improved to 1.1.

Claims (3)

NH4F와 산을 혼합하여 산화막 식각액을 제조하는 반도체 소자의 세척액 제조방법.A method for preparing a cleaning liquid of a semiconductor device in which an oxide film etching solution is prepared by mixing NH 4 F with an acid. 제1항에 있어서, 산으로는 HCL, HNO3, H3PO4, CH3CooH, H2SO4중 하나를 사용하는 반도체 소자의 세척액 제조방법.The method of claim 1, wherein the acid is one of HCl, HNO 3 , H 3 PO 4 , CH 3 CooH, and H 2 SO 4 . 제1항 또는 제2항에 있어서, NH4F와 HCL, HNO3, H3PO4, CH3CooH, H2SO4의 부피비는 NH4F와 HCL, NH4F와 HNO3, NH4F와 H3PO4, NH4F와 CH3CooH는 각각 7 : 1이고, NH4F와 H2SO4는 7 : 0.5임을 특징으로 하는 반도체 소자의 세척액 제조방법.The method of claim 1 or claim 2, NH 4 F and HCL, HNO 3, H 3 PO 4, CH 3 CooH, a volume ratio of H 2 SO 4 is NH 4 F and HCL, NH 4 F and HNO 3, NH 4 F and H 3 PO 4 , NH 4 F and CH 3 CooH is 7: 1, respectively, NH 4 F and H 2 SO 4 It is a manufacturing method of the cleaning device of a semiconductor device, characterized in that 7: 0.5.
KR1019910011717A 1991-07-10 1991-07-10 Method for producing a cleaning solution of semiconductor elements KR930005920B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910011717A KR930005920B1 (en) 1991-07-10 1991-07-10 Method for producing a cleaning solution of semiconductor elements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910011717A KR930005920B1 (en) 1991-07-10 1991-07-10 Method for producing a cleaning solution of semiconductor elements

Publications (2)

Publication Number Publication Date
KR930002541A KR930002541A (en) 1993-02-23
KR930005920B1 true KR930005920B1 (en) 1993-06-29

Family

ID=19317058

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910011717A KR930005920B1 (en) 1991-07-10 1991-07-10 Method for producing a cleaning solution of semiconductor elements

Country Status (1)

Country Link
KR (1) KR930005920B1 (en)

Also Published As

Publication number Publication date
KR930002541A (en) 1993-02-23

Similar Documents

Publication Publication Date Title
US20080203060A1 (en) Etching method and etching composition useful for the method
US4171242A (en) Neutral pH silicon etchant for etching silicon in the presence of phosphosilicate glass
US4339340A (en) Surface-treating agent adapted for intermediate products of a semiconductor device
US4230522A (en) PNAF Etchant for aluminum and silicon
EP0892840A1 (en) A composition for cleaning and etching electronic display and substrate
KR101728441B1 (en) An etching solution composition for copper layer/titanium layer
KR101243847B1 (en) Method for etching cu/mo alloy film with etching capacity of etching solution improved
JP5197902B2 (en) Micro-processed surface treatment liquid for glass substrates with multiple components
US10689573B2 (en) Wet etching composition for substrate having SiN layer and Si layer and wet etching method using same
US5409569A (en) Etchant, detergent and device/apparatus manufacturing method
KR100327342B1 (en) Composite etchant for a nitride etching in a semiconductor process and an etching method using the same etchant
CN108033686A (en) A kind of etching liquid for thinning glass substrate
KR930005920B1 (en) Method for producing a cleaning solution of semiconductor elements
DE69833692T2 (en) ACID SOLUTION FOR THE SELECTIVE SEEDING OF SILICON OXIDE WITH FLUORIDE SALT, COMPLEX AND GLYCOL SOLVENT
JP2000160367A (en) Etching solution in which etching rate is speeded-up
KR20130025612A (en) An etching solution composition for oxide layer containing gallium
US3871931A (en) Method for selectively etching silicon nitride
KR20130074590A (en) An etching solution composition for metal layer containing copper/metal oxide layer containing gallium
US4859280A (en) Method of etching silicon by enhancing silicon etching capability of alkali hydroxide through the addition of positive valence impurity ions
KR19980084299A (en) Method for producing oxide etching solution with cleaning ability
JP2016081985A (en) Method for reusing cleaning and/or etching waste liquid
JP2000286222A5 (en)
JPH07302789A (en) Etchant for polysilicon film, manufacture of said etchant and etching of polysilicon film
Judge Etching Thin Film Dielectric Materials
KR930011906B1 (en) Oxide film etching method of semiconductor device

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20040331

Year of fee payment: 12

LAPS Lapse due to unpaid annual fee